Crossover from a two-to three-dimensional electronic structure in 'SI' spike doped 'GA''AS' superlattices (1994)
- Autores:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Surface Science
- Volume/Número/Paginação/Ano: v.305, n.1-3, p.343-7, 1994
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ABNT
HENRIQUES, André Bohomoletz e GONÇALVES, L. C. D. Crossover from a two-to three-dimensional electronic structure in 'SI' spike doped 'GA''AS' superlattices. Surface Science, v. 305, n. 1-3, p. 343-7, 1994Tradução . . Acesso em: 19 set. 2024. -
APA
Henriques, A. B., & Gonçalves, L. C. D. (1994). Crossover from a two-to three-dimensional electronic structure in 'SI' spike doped 'GA''AS' superlattices. Surface Science, 305( 1-3), 343-7. -
NLM
Henriques AB, Gonçalves LCD. Crossover from a two-to three-dimensional electronic structure in 'SI' spike doped 'GA''AS' superlattices. Surface Science. 1994 ;305( 1-3): 343-7.[citado 2024 set. 19 ] -
Vancouver
Henriques AB, Gonçalves LCD. Crossover from a two-to three-dimensional electronic structure in 'SI' spike doped 'GA''AS' superlattices. Surface Science. 1994 ;305( 1-3): 343-7.[citado 2024 set. 19 ] - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Quantum and transport mobilities in 'DELTA'-doped semiconductors
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
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