ReP USP - Resultado da busca

Trabalho de evento
Deposition and characterization of indium-tin oxide thin films deposited by RF sputtering (2007)
Damiani, Larissa Rodrigues; Mansano, Ronaldo Domingues
Fonte: SBMicro 2007. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DAMIANI, Larissa Rodrigues e MANSANO, Ronaldo Domingues. Deposition and characterization of indium-tin oxide thin films deposited by RF sputtering. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 23 nov. 2025.
APA
Damiani, L. R., & Mansano, R. D. (2007). Deposition and characterization of indium-tin oxide thin films deposited by RF sputtering. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Damiani LR, Mansano RD. Deposition and characterization of indium-tin oxide thin films deposited by RF sputtering. SBMicro 2007. 2007 ;[citado 2025 nov. 23 ]
Vancouver
Damiani LR, Mansano RD. Deposition and characterization of indium-tin oxide thin films deposited by RF sputtering. SBMicro 2007. 2007 ;[citado 2025 nov. 23 ]
Trabalho de evento
Oxygen plasma etching mechanisms of resist (2004)
Verdonck, Patrick Bernard
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VERDONCK, Patrick Bernard. Oxygen plasma etching mechanisms of resist. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 23 nov. 2025.
APA
Verdonck, P. B. (2004). Oxygen plasma etching mechanisms of resist. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Verdonck PB. Oxygen plasma etching mechanisms of resist. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]
Vancouver
Verdonck PB. Oxygen plasma etching mechanisms of resist. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]
Trabalho de evento
Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates (2004)
Araújo, Hugo Puertas de; Santos Filho, Sebastião Gomes dos ; Valle, Márcio de Almeida
Fonte: Microelectronics technology and devices SBMicro 2004.. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, ELETROQUÍMICA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ARAÚJO, Hugo Puertas de e SANTOS FILHO, Sebastião Gomes dos e VALLE, Márcio de Almeida. Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 23 nov. 2025.
APA
Araújo, H. P. de, Santos Filho, S. G. dos, & Valle, M. de A. (2004). Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates. In Microelectronics technology and devices SBMicro 2004.. Pennington: The Electrochemical Society.
NLM
Araújo HP de, Santos Filho SG dos, Valle M de A. Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 23 ]
Vancouver
Araújo HP de, Santos Filho SG dos, Valle M de A. Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 23 ]
Trabalho de evento
Formation and stability of Ni(Pt)Si/Poly-Si layered structure (2004)
Santos, Regis E.; Doi, Ioshiaki; Teixeira, Ricardo C.; Diniz, José A.; Swart, Jacobus Willibrordus; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS, ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Regis E. et al. Formation and stability of Ni(Pt)Si/Poly-Si layered structure. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 23 nov. 2025.
APA
Santos, R. E., Doi, I., Teixeira, R. C., Diniz, J. A., Swart, J. W., & Santos Filho, S. G. dos. (2004). Formation and stability of Ni(Pt)Si/Poly-Si layered structure. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Santos RE, Doi I, Teixeira RC, Diniz JA, Swart JW, Santos Filho SG dos. Formation and stability of Ni(Pt)Si/Poly-Si layered structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]
Vancouver
Santos RE, Doi I, Teixeira RC, Diniz JA, Swart JW, Santos Filho SG dos. Formation and stability of Ni(Pt)Si/Poly-Si layered structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]
Trabalho de evento
Formation of 3C-SIC films on silicon by thermal annealing process (2004)
Oliveira, Alessandro Ricardo de; Paez Carreño, Marcelo Nelson
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
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ABNT
OLIVEIRA, Alessandro Ricardo de e PAEZ CARREÑO, Marcelo Nelson. Formation of 3C-SIC films on silicon by thermal annealing process. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 23 nov. 2025.
APA
Oliveira, A. R. de, & Paez Carreño, M. N. (2004). Formation of 3C-SIC films on silicon by thermal annealing process. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Oliveira AR de, Paez Carreño MN. Formation of 3C-SIC films on silicon by thermal annealing process. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]
Vancouver
Oliveira AR de, Paez Carreño MN. Formation of 3C-SIC films on silicon by thermal annealing process. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]
Trabalho de evento
Characterization of thin MOS gate oxides grown in pyrogenic environment (2004)
Nogueira, Willian Aurélio; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics technology and devices SBMicro 2004.. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS, CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NOGUEIRA, Willian Aurélio e SANTOS FILHO, Sebastião Gomes dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 23 nov. 2025.
APA
Nogueira, W. A., & Santos Filho, S. G. dos. (2004). Characterization of thin MOS gate oxides grown in pyrogenic environment. In Microelectronics technology and devices SBMicro 2004.. Pennington: The Electrochemical Society.
NLM
Nogueira WA, Santos Filho SG dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 23 ]
Vancouver
Nogueira WA, Santos Filho SG dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 23 ]
Trabalho de evento
Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer (2004)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos ; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
REIS, Ronaldo Willian et al. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 23 nov. 2025.
APA
Reis, R. W., Santos Filho, S. G. dos, Doi, I., & Swart, J. W. (2004). Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]
Vancouver
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]
Trabalho de evento
Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures (2004)
Rocha, Otávio Filipe da; Morimoto, Nilton Itiro ; Viana, Carlos Eduardo; Gonçalves, L. C. D.
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: FILMES FINOS, ELETROQUÍMICA, MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ROCHA, Otávio Filipe da et al. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 23 nov. 2025.
APA
Rocha, O. F. da, Morimoto, N. I., Viana, C. E., & Gonçalves, L. C. D. (2004). Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Rocha OF da, Morimoto NI, Viana CE, Gonçalves LCD. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]
Vancouver
Rocha OF da, Morimoto NI, Viana CE, Gonçalves LCD. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 23 ]

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