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Artigo de periodico
'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness (1996)
Lopes, M C V; Santos Filho, Sebastião Gomes dos ; Hasenack, Claus Martin; Baranauskas, V
Source: Journal of the Electrochemical Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LOPES, M C V et al. 'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness. Journal of the Electrochemical Society, v. 143, n. 3 , p. 1021-5, 1996Tradução . . Acesso em: 15 nov. 2025.
APA
Lopes, M. C. V., Santos Filho, S. G. dos, Hasenack, C. M., & Baranauskas, V. (1996). 'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness. Journal of the Electrochemical Society, 143( 3 ), 1021-5.
NLM
Lopes MCV, Santos Filho SG dos, Hasenack CM, Baranauskas V. 'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness. Journal of the Electrochemical Society. 1996 ;143( 3 ): 1021-5.[citado 2025 nov. 15 ]
Vancouver
Lopes MCV, Santos Filho SG dos, Hasenack CM, Baranauskas V. 'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness. Journal of the Electrochemical Society. 1996 ;143( 3 ): 1021-5.[citado 2025 nov. 15 ]
Artigo de periodico
A less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps (1995)
Santos Filho, Sebastião Gomes dos ; Hasenack, Claus Martin; Salay, Luiz Carlos; Mertens, Paul
Source: Journal of the Electrochemical Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS FILHO, Sebastião Gomes dos et al. A less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society, v. 142, n. 3 , p. 902-7, 1995Tradução . . Disponível em: https://doi.org/10.1149/1.2048555. Acesso em: 15 nov. 2025.
APA
Santos Filho, S. G. dos, Hasenack, C. M., Salay, L. C., & Mertens, P. (1995). A less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society, 142( 3 ), 902-7. doi:10.1149/1.2048555
NLM
Santos Filho SG dos, Hasenack CM, Salay LC, Mertens P. A less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps [Internet]. Journal of the Electrochemical Society. 1995 ;142( 3 ): 902-7.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1149/1.2048555
Vancouver
Santos Filho SG dos, Hasenack CM, Salay LC, Mertens P. A less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps [Internet]. Journal of the Electrochemical Society. 1995 ;142( 3 ): 902-7.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1149/1.2048555
Artigo de periodico
Analysis of the etching mechanisms of tungsten in fluorine containing plasmas (1995)
Verdonck, Patrick Bernard; Swart, Jacobus Willibrordus; Brasseur, G; De Geyter, P
Source: Journal of the Electrochemical Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VERDONCK, Patrick Bernard et al. Analysis of the etching mechanisms of tungsten in fluorine containing plasmas. Journal of the Electrochemical Society, v. 142, n. ju 1995, p. 1971-6, 1995Tradução . . Acesso em: 15 nov. 2025.
APA
Verdonck, P. B., Swart, J. W., Brasseur, G., & De Geyter, P. (1995). Analysis of the etching mechanisms of tungsten in fluorine containing plasmas. Journal of the Electrochemical Society, 142( ju 1995), 1971-6.
NLM
Verdonck PB, Swart JW, Brasseur G, De Geyter P. Analysis of the etching mechanisms of tungsten in fluorine containing plasmas. Journal of the Electrochemical Society. 1995 ;142( ju 1995): 1971-6.[citado 2025 nov. 15 ]
Vancouver
Verdonck PB, Swart JW, Brasseur G, De Geyter P. Analysis of the etching mechanisms of tungsten in fluorine containing plasmas. Journal of the Electrochemical Society. 1995 ;142( ju 1995): 1971-6.[citado 2025 nov. 15 ]
Artigo de periodico
Rapid thermal flow of PSG films in vacuum using a graphite heater (1990)
Santos Filho, Sebastião Gomes dos ; Swart, Jacobus Willibrordus
Source: Journal of the Electrochemical Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS FILHO, Sebastião Gomes dos e SWART, Jacobus Willibrordus. Rapid thermal flow of PSG films in vacuum using a graphite heater. Journal of the Electrochemical Society, v. 137, n. 4 , p. 1252-5, 1990Tradução . . Disponível em: https://doi.org/10.1149/1.2086642. Acesso em: 15 nov. 2025.
APA
Santos Filho, S. G. dos, & Swart, J. W. (1990). Rapid thermal flow of PSG films in vacuum using a graphite heater. Journal of the Electrochemical Society, 137( 4 ), 1252-5. doi:10.1149/1.2086642
NLM
Santos Filho SG dos, Swart JW. Rapid thermal flow of PSG films in vacuum using a graphite heater [Internet]. Journal of the Electrochemical Society. 1990 ;137( 4 ): 1252-5.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1149/1.2086642
Vancouver
Santos Filho SG dos, Swart JW. Rapid thermal flow of PSG films in vacuum using a graphite heater [Internet]. Journal of the Electrochemical Society. 1990 ;137( 4 ): 1252-5.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1149/1.2086642

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