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Artigo de periodico
Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures (2004)
Bellodi, Marcello; Martino, João Antonio
Source: Journal Integrated Circuits and Systems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures. Journal Integrated Circuits and Systems, v. 1, n. 2, p. 31-35, 2004Tradução . . Disponível em: https://doi.org/10.29292/jics.v1i2.261. Acesso em: 15 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2004). Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures. Journal Integrated Circuits and Systems, 1( 2), 31-35. doi:10.29292/jics.v1i2.261
NLM
Bellodi M, Martino JA. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures [Internet]. Journal Integrated Circuits and Systems. 2004 ;1( 2): 31-35.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v1i2.261
Vancouver
Bellodi M, Martino JA. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures [Internet]. Journal Integrated Circuits and Systems. 2004 ;1( 2): 31-35.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v1i2.261
Artigo de periodico
High quality low temperature DPECVD silicon dioxide (1997)
Pereyra, Inés ; Alayo Chávez, Marco Isaías
Source: Journal of Non-Crystalline Solids. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PEREYRA, Inés e ALAYO CHÁVEZ, Marco Isaías. High quality low temperature DPECVD silicon dioxide. Journal of Non-Crystalline Solids, v. 212, n. ju 1997, p. 225-231, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0022-3093(96)00650-3. Acesso em: 15 nov. 2025.
APA
Pereyra, I., & Alayo Chávez, M. I. (1997). High quality low temperature DPECVD silicon dioxide. Journal of Non-Crystalline Solids, 212( ju 1997), 225-231. doi:10.1016/s0022-3093(96)00650-3
NLM
Pereyra I, Alayo Chávez MI. High quality low temperature DPECVD silicon dioxide [Internet]. Journal of Non-Crystalline Solids. 1997 ; 212( ju 1997): 225-231.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/s0022-3093(96)00650-3
Vancouver
Pereyra I, Alayo Chávez MI. High quality low temperature DPECVD silicon dioxide [Internet]. Journal of Non-Crystalline Solids. 1997 ; 212( ju 1997): 225-231.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/s0022-3093(96)00650-3
Artigo de periodico
Wide gap a-Sil-Cx:H thin films obtained under starving plasm deposition conditions (1996)
Pereyra, Inés ; Paez Carreño, Marcelo Nelson
Source: Journal of Non-Crystalline Solids. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PEREYRA, Inés e PAEZ CARREÑO, Marcelo Nelson. Wide gap a-Sil-Cx:H thin films obtained under starving plasm deposition conditions. Journal of Non-Crystalline Solids, v. 201, n. ju 1996, p. 110-118, 1996Tradução . . Disponível em: https://doi.org/10.1016/0022-3093(96)00131-7. Acesso em: 15 nov. 2025.
APA
Pereyra, I., & Paez Carreño, M. N. (1996). Wide gap a-Sil-Cx:H thin films obtained under starving plasm deposition conditions. Journal of Non-Crystalline Solids, 201( ju 1996), 110-118. doi:10.1016/0022-3093(96)00131-7
NLM
Pereyra I, Paez Carreño MN. Wide gap a-Sil-Cx:H thin films obtained under starving plasm deposition conditions [Internet]. Journal of Non-Crystalline Solids. 1996 ; 201( ju 1996): 110-118.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0022-3093(96)00131-7
Vancouver
Pereyra I, Paez Carreño MN. Wide gap a-Sil-Cx:H thin films obtained under starving plasm deposition conditions [Internet]. Journal of Non-Crystalline Solids. 1996 ; 201( ju 1996): 110-118.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0022-3093(96)00131-7
Artigo de periodico
Reactive ion etching and plasma etching of tungsten (1993)
Verdonck, Patrick Bernard; Brasseur, G.; Swart, J.
Source: Microelectronic Engineering. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VERDONCK, Patrick Bernard e BRASSEUR, G. e SWART, J. Reactive ion etching and plasma etching of tungsten. Microelectronic Engineering, v. 21, p. 329-332, 1993Tradução . . Disponível em: https://doi.org/10.1016/0167-9317(93)90084-i. Acesso em: 15 nov. 2025.
APA
Verdonck, P. B., Brasseur, G., & Swart, J. (1993). Reactive ion etching and plasma etching of tungsten. Microelectronic Engineering, 21, 329-332. doi:10.1016/0167-9317(93)90084-i
NLM
Verdonck PB, Brasseur G, Swart J. Reactive ion etching and plasma etching of tungsten [Internet]. Microelectronic Engineering. 1993 ; 21 329-332.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0167-9317(93)90084-i
Vancouver
Verdonck PB, Brasseur G, Swart J. Reactive ion etching and plasma etching of tungsten [Internet]. Microelectronic Engineering. 1993 ; 21 329-332.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0167-9317(93)90084-i
Artigo de periodico
Laser enhanced polymer etching in different ambients (1989)
Verdonck, Patrick Bernard; Brasseur, G.; Coopmans, F.
Source: Microelectronic Engineering. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VERDONCK, Patrick Bernard e BRASSEUR, G. e COOPMANS, F. Laser enhanced polymer etching in different ambients. Microelectronic Engineering, v. 9, p. 507-510, 1989Tradução . . Disponível em: https://doi.org/10.1016/0167-9317(89)90111-1. Acesso em: 15 nov. 2025.
APA
Verdonck, P. B., Brasseur, G., & Coopmans, F. (1989). Laser enhanced polymer etching in different ambients. Microelectronic Engineering, 9, 507-510. doi:10.1016/0167-9317(89)90111-1
NLM
Verdonck PB, Brasseur G, Coopmans F. Laser enhanced polymer etching in different ambients [Internet]. Microelectronic Engineering. 1989 ; 9 507-510.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0167-9317(89)90111-1
Vancouver
Verdonck PB, Brasseur G, Coopmans F. Laser enhanced polymer etching in different ambients [Internet]. Microelectronic Engineering. 1989 ; 9 507-510.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0167-9317(89)90111-1

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