Filtros : "Journal of Applied Physics" "Indexado na Web of Science" Removido: "Rohling, Jurandir Hillmann" Limpar

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  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: VIDRO, ÓPTICA NÃO LINEAR, INTELIGÊNCIA ARTIFICIAL, APRENDIZADO COMPUTACIONAL

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      SARAIVA, Murilo Neco e MENDONÇA, Cleber Renato. Assessing the potential of machine learning for predicting the nonlinear refractive index of glasses. Journal of Applied Physics, v. 138, n. 14, p. 143103-1-143103-12 + supplementary material, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0289970. Acesso em: 23 nov. 2025.
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      Saraiva, M. N., & Mendonça, C. R. (2025). Assessing the potential of machine learning for predicting the nonlinear refractive index of glasses. Journal of Applied Physics, 138( 14), 143103-1-143103-12 + supplementary material. doi:10.1063/5.0289970
    • NLM

      Saraiva MN, Mendonça CR. Assessing the potential of machine learning for predicting the nonlinear refractive index of glasses [Internet]. Journal of Applied Physics. 2025 ; 138( 14): 143103-1-143103-12 + supplementary material.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0289970
    • Vancouver

      Saraiva MN, Mendonça CR. Assessing the potential of machine learning for predicting the nonlinear refractive index of glasses [Internet]. Journal of Applied Physics. 2025 ; 138( 14): 143103-1-143103-12 + supplementary material.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0289970
  • Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES

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      SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 23 nov. 2025.
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      Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
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      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0187962
    • Vancouver

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0187962
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: POLÍMEROS (MATERIAIS), SEMICONDUTORES, ÓPTICA, CÁLCULO DE PROBABILIDADE

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      VALENTE, Gustavo Targino e GUIMARÃES, Francisco Eduardo Gontijo. Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, v. 136, n. 8, p. 084501-1-084501-8, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0218020. Acesso em: 23 nov. 2025.
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      Valente, G. T., & Guimarães, F. E. G. (2024). Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, 136( 8), 084501-1-084501-8. doi:10.1063/5.0218020
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      Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0218020
    • Vancouver

      Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0218020
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: LASER, NANOPARTÍCULAS, SEMICONDUTORES, FILMES FINOS, ÓPTICA ELETRÔNICA

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      PAULA, Kelly Tasso de et al. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, v. 133, n. 5, p. 053103-1-053103-10, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0137926. Acesso em: 23 nov. 2025.
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      Paula, K. T. de, Santos, S. N. C. dos, Facure, M. H. M., Araújo, F. L. de, Andrade, M. B. de, Corrêa, D. S., & Mendonça, C. R. (2023). Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, 133( 5), 053103-1-053103-10. doi:10.1063/5.0137926
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      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0137926
    • Vancouver

      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0137926
  • Source: Journal of Applied Physics. Unidades: IFSC, IQSC

    Subjects: TELECOMUNICAÇÕES, INTERNET, FILMES FINOS

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      MATERON, Elsa Maria et al. Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications. Journal of Applied Physics, v. 134, n. 14, p. 145304-1-145304-9, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0167167. Acesso em: 23 nov. 2025.
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      Materon, E. M., Filgueiras, H. R. D., Vilas Boas, E. C., Gómez, F. R., Cavalcanti, F. R. P., Silva, Y. C. B., et al. (2023). Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications. Journal of Applied Physics, 134( 14), 145304-1-145304-9. doi:10.1063/5.0167167
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      Materon EM, Filgueiras HRD, Vilas Boas EC, Gómez FR, Cavalcanti FRP, Silva YCB, Sodre Junior AC, Figueiredo FAP de, Mendes LL, Oliveira Junior ON de, Mejía-Salazar JR. Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications [Internet]. Journal of Applied Physics. 2023 ; 134( 14): 145304-1-145304-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0167167
    • Vancouver

      Materon EM, Filgueiras HRD, Vilas Boas EC, Gómez FR, Cavalcanti FRP, Silva YCB, Sodre Junior AC, Figueiredo FAP de, Mendes LL, Oliveira Junior ON de, Mejía-Salazar JR. Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications [Internet]. Journal of Applied Physics. 2023 ; 134( 14): 145304-1-145304-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0167167
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, NANOPARTÍCULAS, LUMINESCÊNCIA, CÉLULAS SOLARES, FILMES FINOS, ÓPTICA NÃO LINEAR

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      BENTO, A. C. et al. Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: a tutorial. Journal of Applied Physics, v. 131, n. 14, p. 141101-1-141101-18, 2022Tradução . . Disponível em: https://doi.org/10.1063/5.0088211. Acesso em: 23 nov. 2025.
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      Bento, A. C., Cella, N., Lima, S. M., Nunes, L. A. de O., Andrade, L. H. C., Silva, J. R., et al. (2022). Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: a tutorial. Journal of Applied Physics, 131( 14), 141101-1-141101-18. doi:10.1063/5.0088211
    • NLM

      Bento AC, Cella N, Lima SM, Nunes LA de O, Andrade LHC, Silva JR, Zanuto VS, Astrath NGC, Catunda T, Medina AN, Rohling JH, Muniz RF, Berrar JW, Malacarne LC, Weinand WR, Sato F, Belancon MP, Schiavon GJ, Shen J, Miranda LCM, Vargas H, Baesso ML. Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: a tutorial [Internet]. Journal of Applied Physics. 2022 ; 131( 14): 141101-1-141101-18.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0088211
    • Vancouver

      Bento AC, Cella N, Lima SM, Nunes LA de O, Andrade LHC, Silva JR, Zanuto VS, Astrath NGC, Catunda T, Medina AN, Rohling JH, Muniz RF, Berrar JW, Malacarne LC, Weinand WR, Sato F, Belancon MP, Schiavon GJ, Shen J, Miranda LCM, Vargas H, Baesso ML. Photoacoustic and photothermal and the photovoltaic efficiency of solar cells: a tutorial [Internet]. Journal of Applied Physics. 2022 ; 131( 14): 141101-1-141101-18.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0088211
  • Source: Journal of Applied Physics. Unidade: IF

    Subjects: ACÚSTICA, ACÚSTICA, OTIMIZAÇÃO COMBINATÓRIA, MATLAB

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      ZEHNTER, Sebastian e ANDRADE, Marco Aurélio Brizzotti e AMENT, Christoph. Acoustic levitation of a Mie sphere using a 2D transducer array. Journal of Applied Physics, v. 129, n. 13, 2021Tradução . . Disponível em: https://doi.org/10.1063/5.0037344. Acesso em: 23 nov. 2025.
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      Zehnter, S., Andrade, M. A. B., & Ament, C. (2021). Acoustic levitation of a Mie sphere using a 2D transducer array. Journal of Applied Physics, 129( 13). doi:10.1063/5.0037344
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      Zehnter S, Andrade MAB, Ament C. Acoustic levitation of a Mie sphere using a 2D transducer array [Internet]. Journal of Applied Physics. 2021 ; 129( 13):[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0037344
    • Vancouver

      Zehnter S, Andrade MAB, Ament C. Acoustic levitation of a Mie sphere using a 2D transducer array [Internet]. Journal of Applied Physics. 2021 ; 129( 13):[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0037344
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE

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      SANTOS, Jéssica Fabiana Mariano dos et al. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses. Journal of Applied Physics, v. 128, n. 11, p. 113103-1-113103-8, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0020655. Acesso em: 23 nov. 2025.
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      Santos, J. F. M. dos, Zanuto, V. S., Kesavulu, C. R., Venkataia, G., Jayasankar, C. K., Nunes, L. A. de O., & Catunda, T. (2020). Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses. Journal of Applied Physics, 128( 11), 113103-1-113103-8. doi:10.1063/5.0020655
    • NLM

      Santos JFM dos, Zanuto VS, Kesavulu CR, Venkataia G, Jayasankar CK, Nunes LA de O, Catunda T. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses [Internet]. Journal of Applied Physics. 2020 ; 128( 11): 113103-1-113103-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0020655
    • Vancouver

      Santos JFM dos, Zanuto VS, Kesavulu CR, Venkataia G, Jayasankar CK, Nunes LA de O, Catunda T. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses [Internet]. Journal of Applied Physics. 2020 ; 128( 11): 113103-1-113103-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0020655
  • Source: Journal of Applied Physics. Unidade: IF

    Subjects: FÍSICA DO ESTADO SÓLIDO, CRISTALOGRAFIA DE RAIOS X, FILMES FINOS, EPITAXIA POR FEIXE MOLECULAR, MICROSCOPIA ELETRÔNICA DE VARREDURA, MICROSCOPIA DE FORÇA ATÔMICA, ESPECTROSCOPIA DE RAIO X, DIFRAÇÃO POR RAIOS X

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      KAGERER, Philipp et al. Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111). Journal of Applied Physics, v. 128, n. 13, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0025933. Acesso em: 23 nov. 2025.
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      Kagerer, P., Fornari, C. I., Buchberger, S., Morelhão, S. L., Vidal, R. C., Tcakaev, A. -V., et al. (2020). Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111). Journal of Applied Physics, 128( 13). doi:10.1063/5.0025933
    • NLM

      Kagerer P, Fornari CI, Buchberger S, Morelhão SL, Vidal RC, Tcakaev A-V, Zabolotnyy V, Weschke E, Hinkov V, Kamp M, Büchner B, Isaeva A, Bentmann H, Reinert F. Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111) [Internet]. Journal of Applied Physics. 2020 ; 128( 13):[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0025933
    • Vancouver

      Kagerer P, Fornari CI, Buchberger S, Morelhão SL, Vidal RC, Tcakaev A-V, Zabolotnyy V, Weschke E, Hinkov V, Kamp M, Büchner B, Isaeva A, Bentmann H, Reinert F. Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111) [Internet]. Journal of Applied Physics. 2020 ; 128( 13):[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0025933
  • Source: Journal of Applied Physics. Unidade: IF

    Subjects: SEMICONDUTORES (FÍSICO-QUÍMICA), MAGNETOQUÍMICA

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      SILVA, A. Ferreira da et al. Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition. Journal of Applied Physics, v. 127, n. 4, 2020Tradução . . Disponível em: https://doi.org/10.1063/1.5125882. Acesso em: 23 nov. 2025.
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      Silva, A. F. da, Sandoval, M. A. T., Levine, A., Levinson, E., Boudinov, H., & Sernelius, B. E. (2020). Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition. Journal of Applied Physics, 127( 4). doi:10.1063/1.5125882
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      Silva AF da, Sandoval MAT, Levine A, Levinson E, Boudinov H, Sernelius BE. Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition [Internet]. Journal of Applied Physics. 2020 ; 127( 4):[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5125882
    • Vancouver

      Silva AF da, Sandoval MAT, Levine A, Levinson E, Boudinov H, Sernelius BE. Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal–nonmetal transition [Internet]. Journal of Applied Physics. 2020 ; 127( 4):[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5125882
  • Source: Journal of Applied Physics. Unidade: FZEA

    Subjects: NANOCOMPOSITOS, SENSOR, FÍSICA

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      VERCIK, Andrés e VERCIK, Luci Cristina de Oliveira e BUENO, Graziella. Analysis of hysteresis and transport regimes using the normalized differential conductance in hybrid inorganic/organic nanocomposites. Journal of Applied Physics, v. 125, p. 025101-1/025101-10, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5051837. Acesso em: 23 nov. 2025.
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      Vercik, A., Vercik, L. C. de O., & Bueno, G. (2019). Analysis of hysteresis and transport regimes using the normalized differential conductance in hybrid inorganic/organic nanocomposites. Journal of Applied Physics, 125, 025101-1/025101-10. doi:10.1063/1.5051837
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      Vercik A, Vercik LC de O, Bueno G. Analysis of hysteresis and transport regimes using the normalized differential conductance in hybrid inorganic/organic nanocomposites [Internet]. Journal of Applied Physics. 2019 ; 125 025101-1/025101-10.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5051837
    • Vancouver

      Vercik A, Vercik LC de O, Bueno G. Analysis of hysteresis and transport regimes using the normalized differential conductance in hybrid inorganic/organic nanocomposites [Internet]. Journal of Applied Physics. 2019 ; 125 025101-1/025101-10.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5051837
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES

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      PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 23 nov. 2025.
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      Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
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      Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5085493
    • Vancouver

      Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5085493
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE

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      OCHOA, Diego A. et al. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, v. 125, n. Ja 2019, p. 024101-1-024101-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5067243. Acesso em: 23 nov. 2025.
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      Ochoa, D. A., Casals, J. A., Venet, M., M'Peko, J. -C., & García, J. E. (2019). Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, 125( Ja 2019), 024101-1-024101-8. doi:10.1063/1.5067243
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      Ochoa DA, Casals JA, Venet M, M'Peko J-C, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5067243
    • Vancouver

      Ochoa DA, Casals JA, Venet M, M'Peko J-C, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5067243
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: LUMINESCÊNCIA, EMISSÃO DA LUZ, FILMES FINOS, ÓPTICA NÃO LINEAR

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      PEREIRA, Alessandra et al. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, v. 126, n. 16, p. 165501-1-165501-9, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5099014. Acesso em: 23 nov. 2025.
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      Pereira, A., Conte, G., Faceto, A. D., Nunes, L. A. de O., Quirino, W. G., Legnani, C., et al. (2019). Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, 126( 16), 165501-1-165501-9. doi:10.1063/1.5099014
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      Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5099014
    • Vancouver

      Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5099014
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE

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      SANTA-ROSA, Washington et al. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, v. 125, n. 7, p. 075107-1-075107-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5063320. Acesso em: 23 nov. 2025.
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      Santa-Rosa, W., Silva Jr., P. S. da, M'Peko, J. -C., Amorín, H., Algueró, M., & Venet, M. (2019). Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, 125( 7), 075107-1-075107-8. doi:10.1063/1.5063320
    • NLM

      Santa-Rosa W, Silva Jr. PS da, M'Peko J-C, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5063320
    • Vancouver

      Santa-Rosa W, Silva Jr. PS da, M'Peko J-C, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5063320
  • Source: Journal of Applied Physics. Unidades: IFSC, IQSC

    Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS

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      BASTOS, Carlos M. O. et al. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, v. 123, n. 6, p. 065702-1-065702-13, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018325. Acesso em: 23 nov. 2025.
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      Bastos, C. M. O., Sabino, F. P., Sipahi, G. M., & Silva, J. L. F. da. (2018). A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, 123( 6), 065702-1-065702-13. doi:10.1063/1.5018325
    • NLM

      Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5018325
    • Vancouver

      Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5018325
  • Source: Journal of Applied Physics. Unidades: IFSC, IQSC

    Subjects: ÓPTICA, FÍSICA TEÓRICA

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      SABINO, Fernando P. et al. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, v. 123, n. 5, p. 055704-1-055704-9, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018056. Acesso em: 23 nov. 2025.
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      Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2018). Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, 123( 5), 055704-1-055704-9. doi:10.1063/1.5018056
    • NLM

      Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5018056
    • Vancouver

      Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5018056
  • Source: Journal of Applied Physics. Unidade: EESC

    Subjects: VIBRAÇÕES, ENGENHARIA AERONÁUTICA

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      SOUSA, Vagner Candido de et al. Adaptive locally resonant metamaterials leveraging shape memory alloys. Journal of Applied Physics, v. 124, p. 1-11, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5031168. Acesso em: 23 nov. 2025.
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      Sousa, V. C. de, Sugino, C., De Marqui Júnior, C., & Erturk, A. (2018). Adaptive locally resonant metamaterials leveraging shape memory alloys. Journal of Applied Physics, 124, 1-11. doi:10.1063/1.5031168
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      Sousa VC de, Sugino C, De Marqui Júnior C, Erturk A. Adaptive locally resonant metamaterials leveraging shape memory alloys [Internet]. Journal of Applied Physics. 2018 ; 124 1-11.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5031168
    • Vancouver

      Sousa VC de, Sugino C, De Marqui Júnior C, Erturk A. Adaptive locally resonant metamaterials leveraging shape memory alloys [Internet]. Journal of Applied Physics. 2018 ; 124 1-11.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5031168
  • Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: POLÍMEROS (MATERIAIS), FILMES FINOS, CÉLULAS SOLARES

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      BRENES-BADILLA, D. et al. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, v. 123, n. 15, p. 155502-1-155502-7, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5017672. Acesso em: 23 nov. 2025.
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      Brenes-Badilla, D., Coutinho, D. J., Amorim, D. R. B., Faria, R. M., & Salvadori, M. C. B. da S. (2018). Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, 123( 15), 155502-1-155502-7. doi:10.1063/1.5017672
    • NLM

      Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5017672
    • Vancouver

      Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5017672
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS

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      MARTINS, R. J. et al. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, v. 123, n. 24, p. 243101-1-243101-5, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027395. Acesso em: 23 nov. 2025.
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      Martins, R. J., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., Vogt, A., et al. (2018). Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, 123( 24), 243101-1-243101-5. doi:10.1063/1.5027395
    • NLM

      Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5027395
    • Vancouver

      Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5027395

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