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Artigo de periodico
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A ; Silva, M T O; Galzerani, J C; Rodrigues, S C P; Scolfaro, Luisa Maria Ribeiro; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N T; Basmaji, P
Source: Journal of Applied Physics. Unidades: IF, IFSC
Assunto: FÍSICA
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ABNT
PUSEP, Yuri A et al. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 09 nov. 2025.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Raman study of topology of InAs/GaAs self-assembled quantum dots (1999)
Zanelatto, G; Pusep, Yuri A ; Moshegov, N T; Toropov, A I; Basmaji, Pierre; Galzerani, J C
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANELATTO, G et al. Raman study of topology of InAs/GaAs self-assembled quantum dots. Journal of Applied Physics, v. 86, n. 8, p. 4387-4389, 1999Tradução . . Disponível em: https://doi.org/10.1063/1.371375. Acesso em: 09 nov. 2025.
APA
Zanelatto, G., Pusep, Y. A., Moshegov, N. T., Toropov, A. I., Basmaji, P., & Galzerani, J. C. (1999). Raman study of topology of InAs/GaAs self-assembled quantum dots. Journal of Applied Physics, 86( 8), 4387-4389. doi:10.1063/1.371375
NLM
Zanelatto G, Pusep YA, Moshegov NT, Toropov AI, Basmaji P, Galzerani JC. Raman study of topology of InAs/GaAs self-assembled quantum dots [Internet]. Journal of Applied Physics. 1999 ;86( 8): 4387-4389.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.371375
Vancouver
Zanelatto G, Pusep YA, Moshegov NT, Toropov AI, Basmaji P, Galzerani JC. Raman study of topology of InAs/GaAs self-assembled quantum dots [Internet]. Journal of Applied Physics. 1999 ;86( 8): 4387-4389.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.371375
Artigo de periodico
Characterization of GaAs wire crystals grown on porous silicon by Raman scattering (1997)
Silva, S W da; Lubyshev, D I; Basmaji, Pierre; Pusep, Yuri A ; Pizani, Paulo Sérgio; Galzerani, J C; Katiyar, R S; Morell, G
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, S W da et al. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, v. 82, n. 12, p. 6247-6250, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.366511. Acesso em: 09 nov. 2025.
APA
Silva, S. W. da, Lubyshev, D. I., Basmaji, P., Pusep, Y. A., Pizani, P. S., Galzerani, J. C., et al. (1997). Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, 82( 12), 6247-6250. doi:10.1063/1.366511
NLM
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.366511
Vancouver
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.366511
Artigo de periodico
Comparative raman studies of cubic and hexagonal gan epitaxial layers (1996)
Tabata, A; Enderlein, R; Leite, J. R.; Silva, S W; Galzerani, J C; Schikora, D; Kloidt, M; Lischka, K
Source: Journal of Applied Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A et al. Comparative raman studies of cubic and hexagonal gan epitaxial layers. Journal of Applied Physics, v. 79, n. 8 , p. 4137-9, 1996Tradução . . Disponível em: https://doi.org/10.1063/1.361778. Acesso em: 09 nov. 2025.
APA
Tabata, A., Enderlein, R., Leite, J. R., Silva, S. W., Galzerani, J. C., Schikora, D., et al. (1996). Comparative raman studies of cubic and hexagonal gan epitaxial layers. Journal of Applied Physics, 79( 8 ), 4137-9. doi:10.1063/1.361778
NLM
Tabata A, Enderlein R, Leite JR, Silva SW, Galzerani JC, Schikora D, Kloidt M, Lischka K. Comparative raman studies of cubic and hexagonal gan epitaxial layers [Internet]. Journal of Applied Physics. 1996 ;79( 8 ): 4137-9.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.361778
Vancouver
Tabata A, Enderlein R, Leite JR, Silva SW, Galzerani JC, Schikora D, Kloidt M, Lischka K. Comparative raman studies of cubic and hexagonal gan epitaxial layers [Internet]. Journal of Applied Physics. 1996 ;79( 8 ): 4137-9.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.361778

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