ReP USP - Resultado da busca

Artigo de periodico
Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion (2013)
Marletta, Alexandre; Silva, Silésia de Fátima Curcino da; Piovesan, Erick; Campos, K. R.; Silva, Hugo Santos; Souza, N. C.; Vega, Maria Letícia; Raposo, Maria; Constantino, Carlos J. L.; Silva, Raigna A.; Oliveira Junior, Osvaldo Novais de
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FILMES FINOS, ESPECTROSCOPIA RAMAN, POLÍMEROS (MATERIAIS)
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ABNT
MARLETTA, Alexandre et al. Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion. Journal of Applied Physics, v. 113, n. 14, p. 144509-1-144509-7, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4798937. Acesso em: 09 nov. 2025.
APA
Marletta, A., Silva, S. de F. C. da, Piovesan, E., Campos, K. R., Silva, H. S., Souza, N. C., et al. (2013). Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion. Journal of Applied Physics, 113( 14), 144509-1-144509-7. doi:10.1063/1.4798937
NLM
Marletta A, Silva S de FC da, Piovesan E, Campos KR, Silva HS, Souza NC, Vega ML, Raposo M, Constantino CJL, Silva RA, Oliveira Junior ON de. Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion [Internet]. Journal of Applied Physics. 2013 ; 113( 14): 144509-1-144509-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4798937
Vancouver
Marletta A, Silva S de FC da, Piovesan E, Campos KR, Silva HS, Souza NC, Vega ML, Raposo M, Constantino CJL, Silva RA, Oliveira Junior ON de. Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion [Internet]. Journal of Applied Physics. 2013 ; 113( 14): 144509-1-144509-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4798937
Artigo de periodico
Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films (2010)
Ferri, F. A.; Silva, Marcelo de Assumpção Pereira da ; Zanatta, Antonio Ricardo ; Varella, A. L. S.; Oliveira, A. J. A.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: ESPECTROSCOPIA RAMAN, MAGNETISMO (PROPRIEDADES), FILMES FINOS
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ABNT
FERRI, F. A. et al. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films. Journal of Applied Physics, v. 108, n. 11, p. 113922-1-113922-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3520661. Acesso em: 09 nov. 2025.
APA
Ferri, F. A., Silva, M. de A. P. da, Zanatta, A. R., Varella, A. L. S., & Oliveira, A. J. A. (2010). Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films. Journal of Applied Physics, 108( 11), 113922-1-113922-5. doi:10.1063/1.3520661
NLM
Ferri FA, Silva M de AP da, Zanatta AR, Varella ALS, Oliveira AJA. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films [Internet]. Journal of Applied Physics. 2010 ; 108( 11): 113922-1-113922-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3520661
Vancouver
Ferri FA, Silva M de AP da, Zanatta AR, Varella ALS, Oliveira AJA. Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films [Internet]. Journal of Applied Physics. 2010 ; 108( 11): 113922-1-113922-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3520661
Artigo de periodico
Structural and optical analysis of GaAsP/GaP core-shell nanowires (2009)
Mohseni, P. K.; Rodrigues, A. D.; Galzerani, J. C.; Pusep, Yuri A ; LaPierre, R. R.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: SEMICONDUTORES, FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN
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ABNT
MOHSENI, P. K. et al. Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, v. 106, n. 12, p. 124306-1-124306-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3269724. Acesso em: 09 nov. 2025.
APA
Mohseni, P. K., Rodrigues, A. D., Galzerani, J. C., Pusep, Y. A., & LaPierre, R. R. (2009). Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, 106( 12), 124306-1-124306-7. doi:10.1063/1.3269724
NLM
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3269724
Vancouver
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3269724
Artigo de periodico
Short-range structure of 'Pb IND. 1-x''Ba IND. x''Zr IND. 0.65''Ti IND. 0.35''O IND. 3' ceramic compounds probed by XAS and Raman scattering techniques (2009)
Mastelaro, Valmor Roberto ; Mesquita, A.; Neves, P. P.; Michalowicz, A.; Bounif, M.; Pizani, P. S.; Joya, M. R.; Eiras, J. A.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: CRISTALOGRAFIA, MATERIAIS CERÂMICOS, ESPECTROSCOPIA RAMAN, DIFRAÇÃO POR RAIOS X, BÁRIO, SOLUÇÕES, ZIRCÔNIO
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ABNT
MASTELARO, Valmor Roberto et al. Short-range structure of 'Pb IND. 1-x''Ba IND. x''Zr IND. 0.65''Ti IND. 0.35''O IND. 3' ceramic compounds probed by XAS and Raman scattering techniques. Journal of Applied Physics, v. 105, n. 3, p. 033508-1-033508-6, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3073942. Acesso em: 09 nov. 2025.
APA
Mastelaro, V. R., Mesquita, A., Neves, P. P., Michalowicz, A., Bounif, M., Pizani, P. S., et al. (2009). Short-range structure of 'Pb IND. 1-x''Ba IND. x''Zr IND. 0.65''Ti IND. 0.35''O IND. 3' ceramic compounds probed by XAS and Raman scattering techniques. Journal of Applied Physics, 105( 3), 033508-1-033508-6. doi:10.1063/1.3073942
NLM
Mastelaro VR, Mesquita A, Neves PP, Michalowicz A, Bounif M, Pizani PS, Joya MR, Eiras JA. Short-range structure of 'Pb IND. 1-x''Ba IND. x''Zr IND. 0.65''Ti IND. 0.35''O IND. 3' ceramic compounds probed by XAS and Raman scattering techniques [Internet]. Journal of Applied Physics. 2009 ; 105( 3): 033508-1-033508-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3073942
Vancouver
Mastelaro VR, Mesquita A, Neves PP, Michalowicz A, Bounif M, Pizani PS, Joya MR, Eiras JA. Short-range structure of 'Pb IND. 1-x''Ba IND. x''Zr IND. 0.65''Ti IND. 0.35''O IND. 3' ceramic compounds probed by XAS and Raman scattering techniques [Internet]. Journal of Applied Physics. 2009 ; 105( 3): 033508-1-033508-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3073942
Artigo de periodico
Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples (2008)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: NÍQUEL, CRISTALIZAÇÃO, ESPECTROSCOPIA RAMAN, FILMES FINOS
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ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, v. 104, n. 1, p. 013534-1-013534-5, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2955457. Acesso em: 09 nov. 2025.
APA
Ferri, F. A., & Zanatta, A. R. (2008). Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, 104( 1), 013534-1-013534-5. doi:10.1063/1.2955457
NLM
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2955457
Vancouver
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2955457
Artigo de periodico
Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films (2006)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo ; Chambouleyron, I.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILÍCIO, NÍQUEL, TEMPERATURA
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ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, v. No 2006, n. 9, p. 094311-1-094311-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2362877. Acesso em: 09 nov. 2025.
APA
Ferri, F. A., Zanatta, A. R., & Chambouleyron, I. (2006). Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, No 2006( 9), 094311-1-094311-7. doi:10.1063/1.2362877
NLM
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2362877
Vancouver
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2362877
Artigo de periodico
Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal (2006)
Joya, Myriam Rincon; Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart ; Samad, Ricardo Elgul; Rossi, Wagner de; Vieira Junior, Nilson Dias
Fonte: Journal of Applied Physics. Unidade: EESC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
JOYA, Myriam Rincon et al. Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal. Journal of Applied Physics, v. 100, n. 5, p. Se 2006, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2345052. Acesso em: 09 nov. 2025.
APA
Joya, M. R., Pizani, P. S., Jasinevicius, R. G., Samad, R. E., Rossi, W. de, & Vieira Junior, N. D. (2006). Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal. Journal of Applied Physics, 100( 5), Se 2006. doi:10.1063/1.2345052
NLM
Joya MR, Pizani PS, Jasinevicius RG, Samad RE, Rossi W de, Vieira Junior ND. Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal [Internet]. Journal of Applied Physics. 2006 ; 100( 5): Se 2006.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2345052
Vancouver
Joya MR, Pizani PS, Jasinevicius RG, Samad RE, Rossi W de, Vieira Junior ND. Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal [Internet]. Journal of Applied Physics. 2006 ; 100( 5): Se 2006.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2345052
Artigo de periodico
Optoelectronic and structural characteristics of Er-doped amorphous AIN films (2005)
Zanatta, Antonio Ricardo ; Ribeiro, Cristina Teresa M.; Jahn, U.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: ESPECTROSCOPIA RAMAN, SEMICONDUTORES, FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, SILICONE, FILMES FINOS
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ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, Cristina Teresa M. e JAHN, U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, v. No 2005, n. 9, p. 093514-1-093514-8, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.2127120. Acesso em: 09 nov. 2025.
APA
Zanatta, A. R., Ribeiro, C. T. M., & Jahn, U. (2005). Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, No 2005( 9), 093514-1-093514-8. doi:10.1063/1.2127120
NLM
Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2127120
Vancouver
Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2127120
Artigo de periodico
Spectroscopic study of Nd-doped amorphous SiN films (2004)
Ribeiro, C. T. M.; Siu Li, Máximo ; Zanatta, Antonio Ricardo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FILMES FINOS, FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, ESPECTROSCOPIA RAMAN
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ABNT
RIBEIRO, C. T. M. e SIU LI, Máximo e ZANATTA, Antonio Ricardo. Spectroscopic study of Nd-doped amorphous SiN films. Journal of Applied Physics, v. 96, n. 2, p. 1068-1073, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1760843. Acesso em: 09 nov. 2025.
APA
Ribeiro, C. T. M., Siu Li, M., & Zanatta, A. R. (2004). Spectroscopic study of Nd-doped amorphous SiN films. Journal of Applied Physics, 96( 2), 1068-1073. doi:10.1063/1.1760843
NLM
Ribeiro CTM, Siu Li M, Zanatta AR. Spectroscopic study of Nd-doped amorphous SiN films [Internet]. Journal of Applied Physics. 2004 ; 96( 2): 1068-1073.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1760843
Vancouver
Ribeiro CTM, Siu Li M, Zanatta AR. Spectroscopic study of Nd-doped amorphous SiN films [Internet]. Journal of Applied Physics. 2004 ; 96( 2): 1068-1073.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1760843

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