ReP USP - Resultado da busca

Artigo de periodico
Ultraprecision machining of diffraction optical elements on soft semiconductor crystal (2015)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio; Cirino, Giuseppe Antonio
Source: International Journal of Advanced Manufacturing Technology. Unidade: EESC
Subjects: USINAGEM, MUDANÇA DE FASE, DIAMANTE (FERRAMENTAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio e CIRINO, Giuseppe Antonio. Ultraprecision machining of diffraction optical elements on soft semiconductor crystal. International Journal of Advanced Manufacturing Technology, v. 77, n. 5, p. 1145-1154, 2015Tradução . . Disponível em: https://doi.org/10.1007/s00170-014-6449-4. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Pizani, P. S., & Cirino, G. A. (2015). Ultraprecision machining of diffraction optical elements on soft semiconductor crystal. International Journal of Advanced Manufacturing Technology, 77( 5), 1145-1154. doi:10.1007/s00170-014-6449-4
NLM
Jasinevicius RG, Pizani PS, Cirino GA. Ultraprecision machining of diffraction optical elements on soft semiconductor crystal [Internet]. International Journal of Advanced Manufacturing Technology. 2015 ; 77( 5): 1145-1154.[citado 2024 out. 02 ] Available from: https://doi.org/10.1007/s00170-014-6449-4
Vancouver
Jasinevicius RG, Pizani PS, Cirino GA. Ultraprecision machining of diffraction optical elements on soft semiconductor crystal [Internet]. International Journal of Advanced Manufacturing Technology. 2015 ; 77( 5): 1145-1154.[citado 2024 out. 02 ] Available from: https://doi.org/10.1007/s00170-014-6449-4
Artigo de periodico
Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer (2013)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Materials Letters. Unidade: EESC
Subjects: MUDANÇA DE FASE, SILÍCIO, USINAGEM
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer. Materials Letters, v. 94, n. 1, p. 201-205, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.matlet.2012.12.060. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2013). Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer. Materials Letters, 94( 1), 201-205. doi:10.1016/j.matlet.2012.12.060
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer [Internet]. Materials Letters. 2013 ; 94( 1): 201-205.[citado 2024 out. 02 ] Available from: https://doi.org/10.1016/j.matlet.2012.12.060
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer [Internet]. Materials Letters. 2013 ; 94( 1): 201-205.[citado 2024 out. 02 ] Available from: https://doi.org/10.1016/j.matlet.2012.12.060
Artigo de periodico
Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon (2012)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Montanari, Luciana; Pizani, Paulo Sérgio
Source: Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. Unidade: EESC
Subjects: TORNEAMENTO, DIAMANTE, MUDANÇA DE FASE, CRISTALOGRAFIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart et al. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, v. 226, n. 3, p. 445-458, 2012Tradução . . Disponível em: https://doi.org/10.1177/0954405411421108. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Montanari, L., & Pizani, P. S. (2012). Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, 226( 3), 445-458. doi:10.1177/0954405411421108
NLM
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2012 ; 226( 3): 445-458.[citado 2024 out. 02 ] Available from: https://doi.org/10.1177/0954405411421108
Vancouver
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2012 ; 226( 3): 445-458.[citado 2024 out. 02 ] Available from: https://doi.org/10.1177/0954405411421108
Artigo de periodico
Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon (2008)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Montanari, Luciana; Pizani, Paulo Sérgio
Source: Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. Unidade: EESC
Subjects: MUDANÇA DE FASE, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart et al. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, v. 222, n. 9, p. 1065-1073, 2008Tradução . . Disponível em: https://doi.org/10.1243/09544054JEM1161. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Montanari, L., & Pizani, P. S. (2008). Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, 222( 9), 1065-1073. doi:10.1243/09544054JEM1161
NLM
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2008 ; 222( 9): 1065-1073.[citado 2024 out. 02 ] Available from: https://doi.org/10.1243/09544054JEM1161
Vancouver
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2008 ; 222( 9): 1065-1073.[citado 2024 out. 02 ] Available from: https://doi.org/10.1243/09544054JEM1161
Artigo de periodico
On the ductile response dependence upon phase transformation in diamond turning of semiconductors (2007)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: Physica Status Solidi B : basic research. Unidade: EESC
Subjects: SEMICONDUTORES, DIAMANTE, DUCTILIDADE, MUDANÇA DE FASE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, v. 244, n. Ja 2007, p. 261-265, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssb.200672554. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2007). On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, 244( Ja 2007), 261-265. doi:10.1002/pssb.200672554
NLM
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 out. 02 ] Available from: https://doi.org/10.1002/pssb.200672554
Vancouver
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 out. 02 ] Available from: https://doi.org/10.1002/pssb.200672554
Artigo de periodico
Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering (2006)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Zanatta, Ricardo Antonio
Source: Defect and Diffusion Forum. Unidades: EESC, IFSC
Subjects: SILICONE, ESPECTROSCOPIA RAMAN, MUDANÇA DE FASE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart e ZANATTA, Ricardo Antonio. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, v. 258-260, p. 276-281, 2006Tradução . . Acesso em: 02 out. 2024.
APA
Pizani, P. S., Jasinevicius, R. G., & Zanatta, R. A. (2006). Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, 258-260, 276-281.
NLM
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 out. 02 ]
Vancouver
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 out. 02 ]
Artigo de periodico
Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy (2005)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Pizani, Paulo Sérgio; Duduch, Jaime Gilberto; Santos, Francisco José
Source: Materials Research. Unidade: EESC
Subjects: SEMICONDUTORES, MUDANÇA DE FASE, DUCTILIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart et al. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy. Materials Research, v. 8, n. 3, p. 261-268, 2005Tradução . . Disponível em: https://doi.org/10.1590/s1516-14392005000300007. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Pizani, P. S., Duduch, J. G., & Santos, F. J. (2005). Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy. Materials Research, 8( 3), 261-268. doi:10.1590/s1516-14392005000300007
NLM
Jasinevicius RG, Porto AJV, Pizani PS, Duduch JG, Santos FJ. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy [Internet]. Materials Research. 2005 ; 8( 3): 261-268.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1516-14392005000300007
Vancouver
Jasinevicius RG, Porto AJV, Pizani PS, Duduch JG, Santos FJ. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy [Internet]. Materials Research. 2005 ; 8( 3): 261-268.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1516-14392005000300007
Trabalho de evento
High pressure phase transformation in single crystal silicon during ductile regime diamond turning (2005)
Jasinevicius, Renato Goulart; Pizani, P. S.
Source: Proceedings of the COBEM 2005. Conference titles: International Congress of Mechanical Engineering. Unidade: EESC
Subjects: MUDANÇA DE FASE, DIAMANTE, FERRAMENTAS, ENGENHARIA MECÂNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e PIZANI, P. S. High pressure phase transformation in single crystal silicon during ductile regime diamond turning. 2005, Anais.. Rio de Janeiro, RJ: ABCM, 2005. Disponível em: http://www.abcm.org.br/anais/cobem/2005/PDF/COBEM2005-1560.pdf. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2005). High pressure phase transformation in single crystal silicon during ductile regime diamond turning. In Proceedings of the COBEM 2005. Rio de Janeiro, RJ: ABCM. Recuperado de http://www.abcm.org.br/anais/cobem/2005/PDF/COBEM2005-1560.pdf
NLM
Jasinevicius RG, Pizani PS. High pressure phase transformation in single crystal silicon during ductile regime diamond turning [Internet]. Proceedings of the COBEM 2005. 2005 ;[citado 2024 out. 02 ] Available from: http://www.abcm.org.br/anais/cobem/2005/PDF/COBEM2005-1560.pdf
Vancouver
Jasinevicius RG, Pizani PS. High pressure phase transformation in single crystal silicon during ductile regime diamond turning [Internet]. Proceedings of the COBEM 2005. 2005 ;[citado 2024 out. 02 ] Available from: http://www.abcm.org.br/anais/cobem/2005/PDF/COBEM2005-1560.pdf
Artigo de periodico
Multiple phase silicon in submicrometer chips removed by diamond turning (2005)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio; Lanciotti Junior, Francesco; Santos, Francisco José dos
Source: Journal of the Brazilian Society of Mechanical Sciences and Engineering. Unidade: EESC
Subjects: MUDANÇA DE FASE, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart et al. Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, v. 27, n. 4, p. 440-448, 2005Tradução . . Disponível em: https://doi.org/10.1590/s1678-58782005000400013. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Duduch, J. G., Pizani, P. S., Lanciotti Junior, F., & Santos, F. J. dos. (2005). Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, 27( 4), 440-448. doi:10.1590/s1678-58782005000400013
NLM
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1678-58782005000400013
Vancouver
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1678-58782005000400013

USP Schools

ReP

Filtros

Authors

Date published

Subjects

Source title

Indexado em