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Trabalho de evento-anais periodico
The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation (2014)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart
Source: Journal of Physics: Conference Series. Conference titles: Biennial International Conference of the APS Topical Group on Shock Compression of Condensed Matter - APS-SCCM. Unidade: EESC
Subjects: ESPECTROSCOPIA RAMAN, SEMICONDUTORES
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ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart. The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation. Journal of Physics: Conference Series. Bristol: Escola de Engenharia de São Carlos, Universidade de São Paulo. Disponível em: https://doi.org/10.1088/1742-6596/500/18/182032. Acesso em: 02 out. 2024. , 2014
APA
Pizani, P. S., & Jasinevicius, R. G. (2014). The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation. Journal of Physics: Conference Series. Bristol: Escola de Engenharia de São Carlos, Universidade de São Paulo. doi:10.1088/1742-6596/500/18/182032
NLM
Pizani PS, Jasinevicius RG. The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation [Internet]. Journal of Physics: Conference Series. 2014 ; 500 1-5.[citado 2024 out. 02 ] Available from: https://doi.org/10.1088/1742-6596/500/18/182032
Vancouver
Pizani PS, Jasinevicius RG. The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation [Internet]. Journal of Physics: Conference Series. 2014 ; 500 1-5.[citado 2024 out. 02 ] Available from: https://doi.org/10.1088/1742-6596/500/18/182032
Artigo de periodico
Diamond turning of small Fresnel lens array in single crystal InSb (2013)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Cirino, Giuseppe Antonio; Pizani, Paulo Sergio
Source: Journal of Micromechanics and Microengineering. Unidade: EESC
Subjects: DIAMANTE, FERRAMENTAS, ESPECTROSCOPIA RAMAN, MICROSCOPIA ELETRÔNICA DE VARREDURA
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ABNT
JASINEVICIUS, Renato Goulart et al. Diamond turning of small Fresnel lens array in single crystal InSb. Journal of Micromechanics and Microengineering, v. 23, n. 5, p. 055025(1-12), 2013Tradução . . Disponível em: https://doi.org/10.1088/0960-1317/23/5/055025. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Cirino, G. A., & Pizani, P. S. (2013). Diamond turning of small Fresnel lens array in single crystal InSb. Journal of Micromechanics and Microengineering, 23( 5), 055025(1-12). doi:10.1088/0960-1317/23/5/055025
NLM
Jasinevicius RG, Duduch JG, Cirino GA, Pizani PS. Diamond turning of small Fresnel lens array in single crystal InSb [Internet]. Journal of Micromechanics and Microengineering. 2013 ; 23( 5): 055025(1-12).[citado 2024 out. 02 ] Available from: https://doi.org/10.1088/0960-1317/23/5/055025
Vancouver
Jasinevicius RG, Duduch JG, Cirino GA, Pizani PS. Diamond turning of small Fresnel lens array in single crystal InSb [Internet]. Journal of Micromechanics and Microengineering. 2013 ; 23( 5): 055025(1-12).[citado 2024 out. 02 ] Available from: https://doi.org/10.1088/0960-1317/23/5/055025
Artigo de periodico
Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon (2008)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Montanari, Luciana; Pizani, Paulo Sérgio
Source: Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. Unidade: EESC
Subjects: MUDANÇA DE FASE, ESPECTROSCOPIA RAMAN
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ABNT
JASINEVICIUS, Renato Goulart et al. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, v. 222, n. 9, p. 1065-1073, 2008Tradução . . Disponível em: https://doi.org/10.1243/09544054JEM1161. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Montanari, L., & Pizani, P. S. (2008). Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, 222( 9), 1065-1073. doi:10.1243/09544054JEM1161
NLM
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2008 ; 222( 9): 1065-1073.[citado 2024 out. 02 ] Available from: https://doi.org/10.1243/09544054JEM1161
Vancouver
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2008 ; 222( 9): 1065-1073.[citado 2024 out. 02 ] Available from: https://doi.org/10.1243/09544054JEM1161
Artigo de periodico
Annealing treatment of amorphous silicon generated by single point diamond turning (2007)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: International Journal of Advanced Manufacturing Technology. Unidade: EESC
Subjects: SILICONE, DIAMANTE, RECOZIMENTO, ESPECTROSCOPIA RAMAN
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ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. Annealing treatment of amorphous silicon generated by single point diamond turning. International Journal of Advanced Manufacturing Technology, v. 34, n. 7-8, p. 680-688, 2007Tradução . . Disponível em: https://doi.org/10.1007/s00170-006-0650-z. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2007). Annealing treatment of amorphous silicon generated by single point diamond turning. International Journal of Advanced Manufacturing Technology, 34( 7-8), 680-688. doi:10.1007/s00170-006-0650-z
NLM
Jasinevicius RG, Pizani PS. Annealing treatment of amorphous silicon generated by single point diamond turning [Internet]. International Journal of Advanced Manufacturing Technology. 2007 ; 34( 7-8): 680-688.[citado 2024 out. 02 ] Available from: https://doi.org/10.1007/s00170-006-0650-z
Vancouver
Jasinevicius RG, Pizani PS. Annealing treatment of amorphous silicon generated by single point diamond turning [Internet]. International Journal of Advanced Manufacturing Technology. 2007 ; 34( 7-8): 680-688.[citado 2024 out. 02 ] Available from: https://doi.org/10.1007/s00170-006-0650-z
Artigo de periodico
In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Journal of the Brazilian Society of Mechanical Science and Engineering. Unidade: EESC
Subjects: ESPECTROSCOPIA RAMAN, RECOZIMENTO
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal. Journal of the Brazilian Society of Mechanical Science and Engineering, v. 29, n. Ja/Mar. 2007, p. 49-54, 2007Tradução . . Disponível em: https://doi.org/10.1590/s1678-58782007000100008. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal. Journal of the Brazilian Society of Mechanical Science and Engineering, 29( Ja/Mar. 2007), 49-54. doi:10.1590/s1678-58782007000100008
NLM
Jasinevicius RG, Duduch JG, Pizani PS. In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal [Internet]. Journal of the Brazilian Society of Mechanical Science and Engineering. 2007 ; 29( Ja/Mar. 2007): 49-54.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1678-58782007000100008
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal [Internet]. Journal of the Brazilian Society of Mechanical Science and Engineering. 2007 ; 29( Ja/Mar. 2007): 49-54.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1678-58782007000100008
Artigo de periodico
Laser induced modifications of carbon nanotube composite surfaces (2006)
Bassil, Ayman; Puech, Pascal; Bacsa, Wolfgang; Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Demont, P.; Barrau, Sophie; Lacabanne, Collete; Bacsa, Revathi; Flahaut, Emmanuel
Source: Japanese Journal of Applied Physics. Unidade: EESC
Subjects: MATERIAIS COMPÓSITOS, ESPECTROSCOPIA RAMAN
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ABNT
BASSIL, Ayman et al. Laser induced modifications of carbon nanotube composite surfaces. Japanese Journal of Applied Physics, v. 45, n. 10A, p. 7776-7779, 2006Tradução . . Disponível em: http://jjap.ipap.jp/link?JJAP/45/7776/pdf. Acesso em: 02 out. 2024.
APA
Bassil, A., Puech, P., Bacsa, W., Pizani, P. S., Jasinevicius, R. G., Demont, P., et al. (2006). Laser induced modifications of carbon nanotube composite surfaces. Japanese Journal of Applied Physics, 45( 10A), 7776-7779. Recuperado de http://jjap.ipap.jp/link?JJAP/45/7776/pdf
NLM
Bassil A, Puech P, Bacsa W, Pizani PS, Jasinevicius RG, Demont P, Barrau S, Lacabanne C, Bacsa R, Flahaut E. Laser induced modifications of carbon nanotube composite surfaces [Internet]. Japanese Journal of Applied Physics. 2006 ; 45( 10A): 7776-7779.[citado 2024 out. 02 ] Available from: http://jjap.ipap.jp/link?JJAP/45/7776/pdf
Vancouver
Bassil A, Puech P, Bacsa W, Pizani PS, Jasinevicius RG, Demont P, Barrau S, Lacabanne C, Bacsa R, Flahaut E. Laser induced modifications of carbon nanotube composite surfaces [Internet]. Japanese Journal of Applied Physics. 2006 ; 45( 10A): 7776-7779.[citado 2024 out. 02 ] Available from: http://jjap.ipap.jp/link?JJAP/45/7776/pdf
Artigo de periodico
Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation (2006)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidades: EESC, IFSC
Subjects: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILICONE
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ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart e ZANATTA, Antonio Ricardo. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation. Applied Physics Letters, v. 89, n. 3, p. 031917-1-031917-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2227644. Acesso em: 02 out. 2024.
APA
Pizani, P. S., Jasinevicius, R. G., & Zanatta, A. R. (2006). Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation. Applied Physics Letters, 89( 3), 031917-1-031917-3. doi:10.1063/1.2227644
NLM
Pizani PS, Jasinevicius RG, Zanatta AR. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation [Internet]. Applied Physics Letters. 2006 ; 89( 3): 031917-1-031917-3.[citado 2024 out. 02 ] Available from: https://doi.org/10.1063/1.2227644
Vancouver
Pizani PS, Jasinevicius RG, Zanatta AR. Effect of the initial structure of silicon surface on the generation of multiple structural phases by cyclic microindentation [Internet]. Applied Physics Letters. 2006 ; 89( 3): 031917-1-031917-3.[citado 2024 out. 02 ] Available from: https://doi.org/10.1063/1.2227644
Artigo de periodico
Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering (2006)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Zanatta, Ricardo Antonio
Source: Defect and Diffusion Forum. Unidades: EESC, IFSC
Subjects: SILICONE, ESPECTROSCOPIA RAMAN, MUDANÇA DE FASE
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ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart e ZANATTA, Ricardo Antonio. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, v. 258-260, p. 276-281, 2006Tradução . . Acesso em: 02 out. 2024.
APA
Pizani, P. S., Jasinevicius, R. G., & Zanatta, R. A. (2006). Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, 258-260, 276-281.
NLM
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 out. 02 ]
Vancouver
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 out. 02 ]
Artigo de periodico
Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal (2006)
Joya, Myriam Rincon; Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart; Samad, Ricardo Elgul; Rossi, Wagner de; Vieira Junior, Nilson Dias
Source: Journal of Applied Physics. Unidade: EESC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
JOYA, Myriam Rincon et al. Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal. Journal of Applied Physics, v. 100, n. 5, p. Se 2006, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2345052. Acesso em: 02 out. 2024.
APA
Joya, M. R., Pizani, P. S., Jasinevicius, R. G., Samad, R. E., Rossi, W. de, & Vieira Junior, N. D. (2006). Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal. Journal of Applied Physics, 100( 5), Se 2006. doi:10.1063/1.2345052
NLM
Joya MR, Pizani PS, Jasinevicius RG, Samad RE, Rossi W de, Vieira Junior ND. Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal [Internet]. Journal of Applied Physics. 2006 ; 100( 5): Se 2006.[citado 2024 out. 02 ] Available from: https://doi.org/10.1063/1.2345052
Vancouver
Joya MR, Pizani PS, Jasinevicius RG, Samad RE, Rossi W de, Vieira Junior ND. Raman scattering investigation on structural and chemical disorder generated by laser ablation and mechanical microindentations of InSb single crystal [Internet]. Journal of Applied Physics. 2006 ; 100( 5): Se 2006.[citado 2024 out. 02 ] Available from: https://doi.org/10.1063/1.2345052
Trabalho de evento-resumo
Multiple phase silicon formation by means of cyclic microindentation (2006)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Conference titles: Brazilian MRS Meeting. Unidade: EESC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. Multiple phase silicon formation by means of cyclic microindentation. 2006, Anais.. Florianópolis: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2006. . Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2006). Multiple phase silicon formation by means of cyclic microindentation. In . Florianópolis: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Jasinevicius RG, Pizani PS. Multiple phase silicon formation by means of cyclic microindentation. 2006 ;[citado 2024 out. 02 ]
Vancouver
Jasinevicius RG, Pizani PS. Multiple phase silicon formation by means of cyclic microindentation. 2006 ;[citado 2024 out. 02 ]
Trabalho de evento-resumo
Estudo por espectroscopia micro-Raman de transições de fase do 'SI' submetido a pressão não hidrostática (2005)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart
Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: EESC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart. Estudo por espectroscopia micro-Raman de transições de fase do 'SI' submetido a pressão não hidrostática. 2005, Anais.. Santos: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2005. . Acesso em: 02 out. 2024.
APA
Pizani, P. S., & Jasinevicius, R. G. (2005). Estudo por espectroscopia micro-Raman de transições de fase do 'SI' submetido a pressão não hidrostática. In . Santos: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Pizani PS, Jasinevicius RG. Estudo por espectroscopia micro-Raman de transições de fase do 'SI' submetido a pressão não hidrostática. 2005 ;[citado 2024 out. 02 ]
Vancouver
Pizani PS, Jasinevicius RG. Estudo por espectroscopia micro-Raman de transições de fase do 'SI' submetido a pressão não hidrostática. 2005 ;[citado 2024 out. 02 ]
Trabalho de evento-resumo
Estudo por espectroscopia micro-Ramam de transições de fase do InSb submetido à pressão não hidrostática (2005)
Joya, Miryam R.; Pizani, Paulo Sérgio; Lanciotti Junior, Francesco; Jasinevicius, Renato Goulart
Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: EESC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
JOYA, Miryam R. et al. Estudo por espectroscopia micro-Ramam de transições de fase do InSb submetido à pressão não hidrostática. 2005, Anais.. Santos: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2005. . Acesso em: 02 out. 2024.
APA
Joya, M. R., Pizani, P. S., Lanciotti Junior, F., & Jasinevicius, R. G. (2005). Estudo por espectroscopia micro-Ramam de transições de fase do InSb submetido à pressão não hidrostática. In . Santos: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Joya MR, Pizani PS, Lanciotti Junior F, Jasinevicius RG. Estudo por espectroscopia micro-Ramam de transições de fase do InSb submetido à pressão não hidrostática. 2005 ;[citado 2024 out. 02 ]
Vancouver
Joya MR, Pizani PS, Lanciotti Junior F, Jasinevicius RG. Estudo por espectroscopia micro-Ramam de transições de fase do InSb submetido à pressão não hidrostática. 2005 ;[citado 2024 out. 02 ]
Artigo de periodico
Multiple phase silicon in submicrometer chips removed by diamond turning (2005)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio; Lanciotti Junior, Francesco; Santos, Francisco José dos
Source: Journal of the Brazilian Society of Mechanical Sciences and Engineering. Unidade: EESC
Subjects: MUDANÇA DE FASE, ESPECTROSCOPIA RAMAN
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ABNT
JASINEVICIUS, Renato Goulart et al. Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, v. 27, n. 4, p. 440-448, 2005Tradução . . Disponível em: https://doi.org/10.1590/s1678-58782005000400013. Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Duduch, J. G., Pizani, P. S., Lanciotti Junior, F., & Santos, F. J. dos. (2005). Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, 27( 4), 440-448. doi:10.1590/s1678-58782005000400013
NLM
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1678-58782005000400013
Vancouver
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 out. 02 ] Available from: https://doi.org/10.1590/s1678-58782005000400013
Trabalho de evento
Surface integrity evaluation of diamond turned single crystal silicon component (2004)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Lanciotti Junior, Francesco; Pizani, Paulo Sérgio
Source: Proceedings of the euspen. Conference titles: International Conference of the European Society for Precision Engineering and Nanotechnology. Unidade: EESC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
JASINEVICIUS, Renato Goulart et al. Surface integrity evaluation of diamond turned single crystal silicon component. 2004, Anais.. Glasgow: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2004. . Acesso em: 02 out. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Lanciotti Junior, F., & Pizani, P. S. (2004). Surface integrity evaluation of diamond turned single crystal silicon component. In Proceedings of the euspen. Glasgow: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Jasinevicius RG, Duduch JG, Lanciotti Junior F, Pizani PS. Surface integrity evaluation of diamond turned single crystal silicon component. Proceedings of the euspen. 2004 ;[citado 2024 out. 02 ]
Vancouver
Jasinevicius RG, Duduch JG, Lanciotti Junior F, Pizani PS. Surface integrity evaluation of diamond turned single crystal silicon component. Proceedings of the euspen. 2004 ;[citado 2024 out. 02 ]

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