ReP USP - Resultado da busca

Artigo de periodico
Bound photoinduced giant spin polaron in EuTe (2022)
Henriques, André Bohomoletz ; Kooten, Sjoerd Van ; Abramof, Eduardo ; Rappl, P.H.O. ; Galgano, Giovanni Decot
Source: Journal of Applied Physics. Unidade: IF
Subjects: FÍSICO-QUÍMICA, SEMICONDUTORES (FÍSICO-QUÍMICA), FOTOLUMINESCÊNCIA, ESPECTROSCOPIA DA LUZ, SPIN, POLARIZAÇÃO, MÉTODO DE MONTE CARLO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz et al. Bound photoinduced giant spin polaron in EuTe. Journal of Applied Physics, v. 131, n. 4, 2022Tradução . . Disponível em: https://doi.org/10.1063/5.0079384. Acesso em: 23 nov. 2025.
APA
Henriques, A. B., Kooten, S. V., Abramof, E., Rappl, P. H. O., & Galgano, G. D. (2022). Bound photoinduced giant spin polaron in EuTe. Journal of Applied Physics, 131( 4). doi:10.1063/5.0079384
NLM
Henriques AB, Kooten SV, Abramof E, Rappl PHO, Galgano GD. Bound photoinduced giant spin polaron in EuTe [Internet]. Journal of Applied Physics. 2022 ; 131( 4):[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0079384
Vancouver
Henriques AB, Kooten SV, Abramof E, Rappl PHO, Galgano GD. Bound photoinduced giant spin polaron in EuTe [Internet]. Journal of Applied Physics. 2022 ; 131( 4):[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0079384
Artigo de periodico
Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses (2015)
Santos, J. F. M.; Terra, I. A. A.; Astrath, N. G. C.; Guimarães, F. B.; Baesso, M. L.; Nunes, Luiz Antônio de Oliveira ; Catunda, Tomaz
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, ENERGIA, ALUMÍNIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, J. F. M. et al. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, v. 117, n. 5, p. 053102-1-053102-8, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4906781. Acesso em: 23 nov. 2025.
APA
Santos, J. F. M., Terra, I. A. A., Astrath, N. G. C., Guimarães, F. B., Baesso, M. L., Nunes, L. A. de O., & Catunda, T. (2015). Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, 117( 5), 053102-1-053102-8. doi:10.1063/1.4906781
NLM
Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4906781
Vancouver
Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4906781
Artigo de periodico
Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor (2015)
Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCOCA, D. et al. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, v. 117, n. 20, p. 205304-1-205304-6, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4921809. Acesso em: 23 nov. 2025.
APA
Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809
NLM
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4921809
Vancouver
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4921809
Artigo de periodico
Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Caface, R. A.; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAFACE, R. A. et al. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 6, p. 064315-1-064315-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4792301. Acesso em: 23 nov. 2025.
APA
Caface, R. A., Guimarães, F. E. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 6), 064315-1-064315-4. doi:10.1063/1.4792301
NLM
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4792301
Vancouver
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4792301
Artigo de periodico
Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A ; Arakaki, Haroldo; Souza, Carlos Alberto de; Rodrigues, A. D.; Haapamaki, C. M.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 23 nov. 2025.
APA
Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
NLM
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4803494
Vancouver
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4803494
Artigo de periodico
Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation (2011)
Gracia, Lourdes; Longo, Valéria M.; Cavalcante, Laécio S.; Beltrán, Armando; Avansi, Waldir; Siu Li, Máximo ; Mastelaro, Valmor Roberto ; Varela, José A.; Longo, Elson; Andrés, Juan
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: DIFRAÇÃO POR RAIOS X, FOTOLUMINESCÊNCIA, CRESCIMENTO DE CRISTAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GRACIA, Lourdes et al. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation. Journal of Applied Physics, v. 110, n. 4, p. 043501-1-043501-11, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3615948. Acesso em: 23 nov. 2025.
APA
Gracia, L., Longo, V. M., Cavalcante, L. S., Beltrán, A., Avansi, W., Siu Li, M., et al. (2011). Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation. Journal of Applied Physics, 110( 4), 043501-1-043501-11. doi:10.1063/1.3615948
NLM
Gracia L, Longo VM, Cavalcante LS, Beltrán A, Avansi W, Siu Li M, Mastelaro VR, Varela JA, Longo E, Andrés J. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 043501-1-043501-11.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3615948
Vancouver
Gracia L, Longo VM, Cavalcante LS, Beltrán A, Avansi W, Siu Li M, Mastelaro VR, Varela JA, Longo E, Andrés J. Presence of excited electronic state in 'CA'W'O IND. 4' crystals provoked by a tetrahedral distortion: an experimental and theoretical investigation [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 043501-1-043501-11.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3615948
Artigo de periodico
Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers (2011)
Therézio, Eralci M.; Piovesan, Erick; Anni, Marco; Silva, R. A.; Oliveira Junior, Osvaldo Novais de ; Marletta, Alexandre
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA, ENERGIA (TRANSFERÊNCIA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
THERÉZIO, Eralci M. et al. Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers. Journal of Applied Physics, v. 110, n. 4, p. 044504-1-044504-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3622143. Acesso em: 23 nov. 2025.
APA
Therézio, E. M., Piovesan, E., Anni, M., Silva, R. A., Oliveira Junior, O. N. de, & Marletta, A. (2011). Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers. Journal of Applied Physics, 110( 4), 044504-1-044504-6. doi:10.1063/1.3622143
NLM
Therézio EM, Piovesan E, Anni M, Silva RA, Oliveira Junior ON de, Marletta A. Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 044504-1-044504-6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3622143
Vancouver
Therézio EM, Piovesan E, Anni M, Silva RA, Oliveira Junior ON de, Marletta A. Substrate/semiconductor interface effects on the emission efficiency of luminescent polymers [Internet]. Journal of Applied Physics. 2011 ; 110( 4): 044504-1-044504-6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3622143
Artigo de periodico
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters (2010)
Borrero-González, L. J.; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcello Rubens Barsi; Wojcik, J.; Mascher, P.; Pusep, Yuri A ; Comedi, D.; Guimarães, Francisco Eduardo Gontijo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, TEMPERATURA (VARIAÇÃO)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORRERO-GONZÁLEZ, L. J. et al. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, v. 108, n. 1, p. 013105-1-013105-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3457900. Acesso em: 23 nov. 2025.
APA
Borrero-González, L. J., Nunes, L. A. de O., Andreeta, M. R. B., Wojcik, J., Mascher, P., Pusep, Y. A., et al. (2010). The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, 108( 1), 013105-1-013105-5. doi:10.1063/1.3457900
NLM
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3457900
Vancouver
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3457900
Artigo de periodico
Structural and optical analysis of GaAsP/GaP core-shell nanowires (2009)
Mohseni, P. K.; Rodrigues, A. D.; Galzerani, J. C.; Pusep, Yuri A ; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MOHSENI, P. K. et al. Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, v. 106, n. 12, p. 124306-1-124306-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3269724. Acesso em: 23 nov. 2025.
APA
Mohseni, P. K., Rodrigues, A. D., Galzerani, J. C., Pusep, Y. A., & LaPierre, R. R. (2009). Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, 106( 12), 124306-1-124306-7. doi:10.1063/1.3269724
NLM
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3269724
Vancouver
Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3269724
Artigo de periodico
The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3' (2009)
Milanez, Juliana; Figueiredo, Alberthmeiry T.; Lázaro, Sérgio; Longo, Valéria M.; Erlo, Rafael; Mastelaro, Valmor Roberto ; Franco, Roberto W. A.; Longo, Elson; Varela, José A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, RESSONÂNCIA PARAMAGNÉTICA DE SPIN, FILMES FINOS, MECÂNICA QUÂNTICA, ENERGIA, DENSIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MILANEZ, Juliana et al. The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3'. Journal of Applied Physics, v. 106, n. 4, p. 043526-1-043526-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3190524. Acesso em: 23 nov. 2025.
APA
Milanez, J., Figueiredo, A. T., Lázaro, S., Longo, V. M., Erlo, R., Mastelaro, V. R., et al. (2009). The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3'. Journal of Applied Physics, 106( 4), 043526-1-043526-7. doi:10.1063/1.3190524
NLM
Milanez J, Figueiredo AT, Lázaro S, Longo VM, Erlo R, Mastelaro VR, Franco RWA, Longo E, Varela JA. The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3' [Internet]. Journal of Applied Physics. 2009 ; 106( 4): 043526-1-043526-7.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3190524
Vancouver
Milanez J, Figueiredo AT, Lázaro S, Longo VM, Erlo R, Mastelaro VR, Franco RWA, Longo E, Varela JA. The role of oxygen vacancy in the photoluminescence property at room temperature of the CaTi'O IND.3' [Internet]. Journal of Applied Physics. 2009 ; 106( 4): 043526-1-043526-7.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3190524
Artigo de periodico
Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses (2009)
Santos, C. N.; Mohr, D.; Silva, W. F.; de Camargo, Andrea Simone Stucchi ; Eckert, Hellmut ; Siu Li, Máximo ; Vermelho, M. V. D.; Hernandes, Antônio Carlos ; Ibanez, A.; Jacinto, C.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FLUORESCÊNCIA, ÓPTICA (PROPRIEDADES TÉRMICAS), VIDRO, TERRAS RARAS, LASER
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, C. N. et al. Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses. Journal of Applied Physics, v. 106, n. 2, p. 023512-1-023512-6, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3176503. Acesso em: 23 nov. 2025.
APA
Santos, C. N., Mohr, D., Silva, W. F., de Camargo, A. S. S., Eckert, H., Siu Li, M., et al. (2009). Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses. Journal of Applied Physics, 106( 2), 023512-1-023512-6. doi:10.1063/1.3176503
NLM
Santos CN, Mohr D, Silva WF, de Camargo ASS, Eckert H, Siu Li M, Vermelho MVD, Hernandes AC, Ibanez A, Jacinto C. Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses [Internet]. Journal of Applied Physics. 2009 ; 106( 2): 023512-1-023512-6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3176503
Vancouver
Santos CN, Mohr D, Silva WF, de Camargo ASS, Eckert H, Siu Li M, Vermelho MVD, Hernandes AC, Ibanez A, Jacinto C. Luminescent and thermo-optical properties of 'Nd IND.3+'-doped yttrium aluminoborate laser glasses [Internet]. Journal of Applied Physics. 2009 ; 106( 2): 023512-1-023512-6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3176503
Artigo de periodico
Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach (2008)
Longo, V. M.; Figueiredo, A. T.; Lázaro, S. de; Gurgel, M. F.; Costa, M. G. S.; Santos, C. O. Paiva; Varela, José Arana; Longo, Elson; Mastelaro, Valmor Roberto ; De Vicente, Fábio Simões ; Hernandes, Antônio Carlos ; Franco, R. W. A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, ÓPTICA (PROPRIEDADES), NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LONGO, V. M. et al. Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach. Journal of Applied Physics, v. 104, n. 2, p. 023515-1-023515-11, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2956741. Acesso em: 23 nov. 2025.
APA
Longo, V. M., Figueiredo, A. T., Lázaro, S. de, Gurgel, M. F., Costa, M. G. S., Santos, C. O. P., et al. (2008). Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach. Journal of Applied Physics, 104( 2), 023515-1-023515-11. doi:10.1063/1.2956741
NLM
Longo VM, Figueiredo AT, Lázaro S de, Gurgel MF, Costa MGS, Santos COP, Varela JA, Longo E, Mastelaro VR, De Vicente FS, Hernandes AC, Franco RWA. Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach [Internet]. Journal of Applied Physics. 2008 ; 104( 2): 023515-1-023515-11.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2956741
Vancouver
Longo VM, Figueiredo AT, Lázaro S de, Gurgel MF, Costa MGS, Santos COP, Varela JA, Longo E, Mastelaro VR, De Vicente FS, Hernandes AC, Franco RWA. Structural conditions that leads to photoluminescence emission in SrTi'O IND.3': an experimental and theoretical approach [Internet]. Journal of Applied Physics. 2008 ; 104( 2): 023515-1-023515-11.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2956741
Artigo de periodico
Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa (2008)
Teodoro, M. D.; Dias, I. F. L.; Laureto, E.; Duarte, J. L.; Borrero, P. P. González; Lourenço, S. A.; Mazzaro, I.; Marega Junior, Euclydes ; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES, GASES, TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TEODORO, M. D. et al. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, v. 103, n. 9, p. 093508-1-093508-7, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2913513. Acesso em: 23 nov. 2025.
APA
Teodoro, M. D., Dias, I. F. L., Laureto, E., Duarte, J. L., Borrero, P. P. G., Lourenço, S. A., et al. (2008). Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, 103( 9), 093508-1-093508-7. doi:10.1063/1.2913513
NLM
Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2913513
Vancouver
Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2913513
Artigo de periodico
High resolution x-ray diffraction analysis of InGaAs/InP superlattices (2006)
Cornet, D. M.; LaPierre, R. R.; Comedi, D.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: DIFRAÇÃO POR RAIOS X, ÓPTICA ELETRÔNICA, SEMICONDUTORES, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CORNET, D. M. et al. High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, v. 100, n. 4, p. 043518-1-043518-6, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2335689. Acesso em: 23 nov. 2025.
APA
Cornet, D. M., LaPierre, R. R., Comedi, D., & Pusep, Y. A. (2006). High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, 100( 4), 043518-1-043518-6. doi:10.1063/1.2335689
NLM
Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2335689
Vancouver
Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2335689
Artigo de periodico
Optoelectronic and structural characteristics of Er-doped amorphous AIN films (2005)
Zanatta, Antonio Ricardo ; Ribeiro, Cristina Teresa M.; Jahn, U.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN, SEMICONDUTORES, FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, SILICONE, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, Cristina Teresa M. e JAHN, U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, v. No 2005, n. 9, p. 093514-1-093514-8, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.2127120. Acesso em: 23 nov. 2025.
APA
Zanatta, A. R., Ribeiro, C. T. M., & Jahn, U. (2005). Optoelectronic and structural characteristics of Er-doped amorphous AIN films. Journal of Applied Physics, No 2005( 9), 093514-1-093514-8. doi:10.1063/1.2127120
NLM
Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2127120
Vancouver
Zanatta AR, Ribeiro CTM, Jahn U. Optoelectronic and structural characteristics of Er-doped amorphous AIN films [Internet]. Journal of Applied Physics. 2005 ; No 2005( 9): 093514-1-093514-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2127120
Artigo de periodico
Spectroscopic study of Nd-doped amorphous SiN films (2004)
Ribeiro, C. T. M.; Siu Li, Máximo ; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RIBEIRO, C. T. M. e SIU LI, Máximo e ZANATTA, Antonio Ricardo. Spectroscopic study of Nd-doped amorphous SiN films. Journal of Applied Physics, v. 96, n. 2, p. 1068-1073, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1760843. Acesso em: 23 nov. 2025.
APA
Ribeiro, C. T. M., Siu Li, M., & Zanatta, A. R. (2004). Spectroscopic study of Nd-doped amorphous SiN films. Journal of Applied Physics, 96( 2), 1068-1073. doi:10.1063/1.1760843
NLM
Ribeiro CTM, Siu Li M, Zanatta AR. Spectroscopic study of Nd-doped amorphous SiN films [Internet]. Journal of Applied Physics. 2004 ; 96( 2): 1068-1073.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1760843
Vancouver
Ribeiro CTM, Siu Li M, Zanatta AR. Spectroscopic study of Nd-doped amorphous SiN films [Internet]. Journal of Applied Physics. 2004 ; 96( 2): 1068-1073.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1760843
Artigo de periodico
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots (2003)
Duarte, C A; Silva, Euzi Conceicao Fernandes da; Quivy, Alain André ; Silva, M J da; Martini, S; Leite, J. R.; Meneses, E A; Lauretto, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X, ÓPTICA, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DUARTE, C A et al. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1568538. Acesso em: 23 nov. 2025.
APA
Duarte, C. A., Silva, E. C. F. da, Quivy, A. A., Silva, M. J. da, Martini, S., Leite, J. R., et al. (2003). Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, 93( 10), 6279-6283. doi:10.1063/1.1568538
NLM
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1568538
Vancouver
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1568538
Artigo de periodico
Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient (2003)
Sales, F V de; Cruz, J M R; Silva, S W da; Soler, M A G; Morais, P C de; Silva, M J da; Quivy, Alain André ; Leite, J. R.
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALES, F V de et al. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient. Journal of Applied Physics, v. 94, n. 3, p. 1787-1794, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1586953. Acesso em: 23 nov. 2025.
APA
Sales, F. V. de, Cruz, J. M. R., Silva, S. W. da, Soler, M. A. G., Morais, P. C. de, Silva, M. J. da, et al. (2003). Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient. Journal of Applied Physics, 94( 3), 1787-1794. doi:10.1063/1.1586953
NLM
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC de, Silva MJ da, Quivy AA, Leite JR. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient [Internet]. Journal of Applied Physics. 2003 ; 94( 3): 1787-1794.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1586953
Vancouver
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC de, Silva MJ da, Quivy AA, Leite JR. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient [Internet]. Journal of Applied Physics. 2003 ; 94( 3): 1787-1794.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1586953
Artigo de periodico
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces (2001)
Martini, S.; Quivy, Alain André ; Tabata, A; Leite, J. R.
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MICROSCOPIA ELETRÔNICA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA, SUPERFÍCIE FÍSICA, TERMODINÂMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S. et al. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, v. 90, n. 5, p. 2280-2289, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389336. Acesso em: 23 nov. 2025.
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2001). Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, 90( 5), 2280-2289. doi:10.1063/1.1389336
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1389336
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1389336
Artigo de periodico
Temperature dependence of optical transitions in AlGaAs (2001)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Meneses, E A; Leite, J. R.; Mazzaro, I
Source: Journal of Applied Physics. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, ÓPTICA, SEMICONDUTORES, DIELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LOURENÇO, S A et al. Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, v. 89, n. 11, p. 6159-6164, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1367875. Acesso em: 23 nov. 2025.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Meneses, E. A., Leite, J. R., & Mazzaro, I. (2001). Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, 89( 11), 6159-6164. doi:10.1063/1.1367875
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1367875
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1367875

USP Schools

ReP

Filtros

Authors

USP affiliated authors

Date published

Subjects

Grupo de pesquisa

Non normalized affiliation