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Artigo de periodico
Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)
Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES
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ABNT
SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 23 nov. 2025.
APA
Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
NLM
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0187962
Vancouver
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0187962
Artigo de periodico
Probabilistic modeling of energy transfer in disordered organic semiconductors (2024)
Valente, Gustavo Targino ; Guimarães, Francisco Eduardo Gontijo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: POLÍMEROS (MATERIAIS), SEMICONDUTORES, ÓPTICA, CÁLCULO DE PROBABILIDADE
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ABNT
VALENTE, Gustavo Targino e GUIMARÃES, Francisco Eduardo Gontijo. Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, v. 136, n. 8, p. 084501-1-084501-8, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0218020. Acesso em: 23 nov. 2025.
APA
Valente, G. T., & Guimarães, F. E. G. (2024). Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, 136( 8), 084501-1-084501-8. doi:10.1063/5.0218020
NLM
Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0218020
Vancouver
Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0218020
Artigo de periodico
Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications (2023)
Paula, Kelly Tasso de ; Santos, Sabrina Nicoleti Carvalho dos ; Facure, Murilo Henrique Moreira ; Araújo, Francineide Lopes de ; Andrade, Marcelo Barbosa de ; Corrêa, Daniel Souza ; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: LASER, NANOPARTÍCULAS, SEMICONDUTORES, FILMES FINOS, ÓPTICA ELETRÔNICA
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ABNT
PAULA, Kelly Tasso de et al. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, v. 133, n. 5, p. 053103-1-053103-10, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0137926. Acesso em: 23 nov. 2025.
APA
Paula, K. T. de, Santos, S. N. C. dos, Facure, M. H. M., Araújo, F. L. de, Andrade, M. B. de, Corrêa, D. S., & Mendonça, C. R. (2023). Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, 133( 5), 053103-1-053103-10. doi:10.1063/5.0137926
NLM
Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0137926
Vancouver
Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/5.0137926
Artigo de periodico
Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)
Patricio, M. A. Tito; LaPierre, R. R.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 23 nov. 2025.
APA
Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
NLM
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5085493
Vancouver
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5085493
Artigo de periodico
A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory (2018)
Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme Matos ; Silva, Juarez Lopes Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IQSC
Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS
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ABNT
BASTOS, Carlos M. O. et al. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, v. 123, n. 6, p. 065702-1-065702-13, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018325. Acesso em: 23 nov. 2025.
APA
Bastos, C. M. O., Sabino, F. P., Sipahi, G. M., & Silva, J. L. F. da. (2018). A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, 123( 6), 065702-1-065702-13. doi:10.1063/1.5018325
NLM
Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5018325
Vancouver
Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5018325
Artigo de periodico
Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' (2018)
Pavlov, V. V.; Pisarev, R. V.; Nefedov, S. G.; Akimov, I. A.; Yakovlev, D. R.; Bayer, M.; Rappl, P. H. O.; Abramof, E.; Henriques, André Bohomoletz
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, MAGNETISMO, FERROMAGNETISMO
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ABNT
PAVLOV, V. V. et al. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE'. Journal of Applied Physics, v. 123, n. 19, p. 193102, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027473. Acesso em: 23 nov. 2025.
APA
Pavlov, V. V., Pisarev, R. V., Nefedov, S. G., Akimov, I. A., Yakovlev, D. R., Bayer, M., et al. (2018). Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE'. Journal of Applied Physics, 123( 19), 193102. doi:10.1063/1.5027473
NLM
Pavlov VV, Pisarev RV, Nefedov SG, Akimov IA, Yakovlev DR, Bayer M, Rappl PHO, Abramof E, Henriques AB. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' [Internet]. Journal of Applied Physics. 2018 ; 123( 19): 193102.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5027473
Vancouver
Pavlov VV, Pisarev RV, Nefedov SG, Akimov IA, Yakovlev DR, Bayer M, Rappl PHO, Abramof E, Henriques AB. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' [Internet]. Journal of Applied Physics. 2018 ; 123( 19): 193102.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5027473
Artigo de periodico
Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption (2018)
Martins, R. J.; Siqueira, J. P.; Clavero, I. Manglano; Margenfeld, C.; Fündling, S.; Vogt, A.; Waag, A.; Voss, T.; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS
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ABNT
MARTINS, R. J. et al. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, v. 123, n. 24, p. 243101-1-243101-5, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027395. Acesso em: 23 nov. 2025.
APA
Martins, R. J., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., Vogt, A., et al. (2018). Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, 123( 24), 243101-1-243101-5. doi:10.1063/1.5027395
NLM
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5027395
Vancouver
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.5027395
Artigo de periodico
Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers (2016)
Tavares, B. G. M.; Tito, M. A.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 23 nov. 2025.
APA
Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
NLM
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4954161
Vancouver
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.4954161
Artigo de periodico
Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs (2010)
Caetano, Clóvis; Teles, L. K.; Marques, Marcelo; Ferreira, Luiz Guimarães
Source: Journal of Applied Physics. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
CAETANO, Clóvis et al. Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs. Journal of Applied Physics, v. 107, n. 12, p. 123904/1-123904/5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3448025. Acesso em: 23 nov. 2025.
APA
Caetano, C., Teles, L. K., Marques, M., & Ferreira, L. G. (2010). Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs. Journal of Applied Physics, 107( 12), 123904/1-123904/5. doi:10.1063/1.3448025
NLM
Caetano C, Teles LK, Marques M, Ferreira LG. Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs [Internet]. Journal of Applied Physics. 2010 ; 107( 12): 123904/1-123904/5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3448025
Vancouver
Caetano C, Teles LK, Marques M, Ferreira LG. Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs [Internet]. Journal of Applied Physics. 2010 ; 107( 12): 123904/1-123904/5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3448025
Artigo de periodico
Absence of ferromagnetic order in high quality bulk Co-doped ZnO samples (2010)
Carvalho, H B de; Godoy, M P F; Paes, R W D; Mir, M; Ortiz de Zevallos, A; Iikawa, F; Brasil, Maria José Santos Pompeu; Chitta, Valmir Antonio ; Ferraz, W B; Boselli, M A; Sabioni, A C S
Source: Journal of Applied Physics. Unidade: IF
Subjects: FILMES FINOS, SEMICONDUTORES
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ABNT
CARVALHO, H B de et al. Absence of ferromagnetic order in high quality bulk Co-doped ZnO samples. Journal of Applied Physics, v. 108, n. 3, p. 33914/1-33914/5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3459885. Acesso em: 23 nov. 2025.
APA
Carvalho, H. B. de, Godoy, M. P. F., Paes, R. W. D., Mir, M., Ortiz de Zevallos, A., Iikawa, F., et al. (2010). Absence of ferromagnetic order in high quality bulk Co-doped ZnO samples. Journal of Applied Physics, 108( 3), 33914/1-33914/5. doi:10.1063/1.3459885
NLM
Carvalho HB de, Godoy MPF, Paes RWD, Mir M, Ortiz de Zevallos A, Iikawa F, Brasil MJSP, Chitta VA, Ferraz WB, Boselli MA, Sabioni ACS. Absence of ferromagnetic order in high quality bulk Co-doped ZnO samples [Internet]. Journal of Applied Physics. 2010 ; 108( 3): 33914/1-33914/5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3459885
Vancouver
Carvalho HB de, Godoy MPF, Paes RWD, Mir M, Ortiz de Zevallos A, Iikawa F, Brasil MJSP, Chitta VA, Ferraz WB, Boselli MA, Sabioni ACS. Absence of ferromagnetic order in high quality bulk Co-doped ZnO samples [Internet]. Journal of Applied Physics. 2010 ; 108( 3): 33914/1-33914/5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3459885
Artigo de periodico
Artificial molecular quantum rings under magnetic field influence (2009)
Castelano, L. K.; Hai, Guo-Qiang ; Partoens, B; Peeters, F. M.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, MAGNETISMO, ENERGIA
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ABNT
CASTELANO, L. K. et al. Artificial molecular quantum rings under magnetic field influence. Journal of Applied Physics, v. 106, n. 7, p. 073702-1-073702-8, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3223360. Acesso em: 23 nov. 2025.
APA
Castelano, L. K., Hai, G. -Q., Partoens, B., & Peeters, F. M. (2009). Artificial molecular quantum rings under magnetic field influence. Journal of Applied Physics, 106( 7), 073702-1-073702-8. doi:10.1063/1.3223360
NLM
Castelano LK, Hai G-Q, Partoens B, Peeters FM. Artificial molecular quantum rings under magnetic field influence [Internet]. Journal of Applied Physics. 2009 ; 106( 7): 073702-1-073702-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3223360
Vancouver
Castelano LK, Hai G-Q, Partoens B, Peeters FM. Artificial molecular quantum rings under magnetic field influence [Internet]. Journal of Applied Physics. 2009 ; 106( 7): 073702-1-073702-8.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.3223360
Artigo de periodico
Trimming Si surfaces for molecular electronics (2007)
Caldas, Marilia Junqueira ; Calzolari, A; Cucinotta, C S
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA
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ABNT
CALDAS, Marilia Junqueira e CALZOLARI, A e CUCINOTTA, C S. Trimming Si surfaces for molecular electronics. Journal of Applied Physics, v. 101, n. 8, p. 081719/1-081719/5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2723176. Acesso em: 23 nov. 2025.
APA
Caldas, M. J., Calzolari, A., & Cucinotta, C. S. (2007). Trimming Si surfaces for molecular electronics. Journal of Applied Physics, 101( 8), 081719/1-081719/5. doi:10.1063/1.2723176
NLM
Caldas MJ, Calzolari A, Cucinotta CS. Trimming Si surfaces for molecular electronics [Internet]. Journal of Applied Physics. 2007 ; 101( 8): 081719/1-081719/5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2723176
Vancouver
Caldas MJ, Calzolari A, Cucinotta CS. Trimming Si surfaces for molecular electronics [Internet]. Journal of Applied Physics. 2007 ; 101( 8): 081719/1-081719/5.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2723176
Artigo de periodico
Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells (2007)
Cunha, J F R; Silva, S W da; Morais, P C; Lamas, T. E.; Quivy, Alain André
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
CUNHA, J F R et al. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, v. 102, n. 4, p. 0437048/1-043704/6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2769963. Acesso em: 23 nov. 2025.
APA
Cunha, J. F. R., Silva, S. W. da, Morais, P. C., Lamas, T. E., & Quivy, A. A. (2007). Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, 102( 4), 0437048/1-043704/6. doi:10.1063/1.2769963
NLM
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2769963
Vancouver
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.2769963
Artigo de periodico
Hole mobility in zincblende c-GaN (2004)
Rodrigues, C G; Fernandez, J R L; Leite, J. R.; Chitta, Valmir Antonio ; Freire, V N; Vasconcellos, A R; Luzzi, R
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, TERMODINÂMICA
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ABNT
RODRIGUES, C G et al. Hole mobility in zincblende c-GaN. Journal of Applied Physics, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips. Acesso em: 23 nov. 2025.
APA
Rodrigues, C. G., Fernandez, J. R. L., Leite, J. R., Chitta, V. A., Freire, V. N., Vasconcellos, A. R., & Luzzi, R. (2004). Hole mobility in zincblende c-GaN. Journal of Applied Physics. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
NLM
Rodrigues CG, Fernandez JRL, Leite JR, Chitta VA, Freire VN, Vasconcellos AR, Luzzi R. Hole mobility in zincblende c-GaN [Internet]. Journal of Applied Physics. 2004 ;[citado 2025 nov. 23 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
Vancouver
Rodrigues CG, Fernandez JRL, Leite JR, Chitta VA, Freire VN, Vasconcellos AR, Luzzi R. Hole mobility in zincblende c-GaN [Internet]. Journal of Applied Physics. 2004 ;[citado 2025 nov. 23 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
Artigo de periodico
Optical constants and thickness determination of very thin amorphous semiconductor films (2002)
Chambouleyron, Ivan Emílio; Ventura, S. D.; Birgin, Ernesto Julian Goldberg ; Martínez, José Mário
Source: Journal of Applied Physics. Unidade: IME
Subjects: ALGORITMOS, SEMICONDUTORES, DIELÉTRICOS
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ABNT
CHAMBOULEYRON, Ivan Emílio et al. Optical constants and thickness determination of very thin amorphous semiconductor films. Journal of Applied Physics, v. 92, n. 6, p. 3093-3102, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1500785. Acesso em: 23 nov. 2025.
APA
Chambouleyron, I. E., Ventura, S. D., Birgin, E. J. G., & Martínez, J. M. (2002). Optical constants and thickness determination of very thin amorphous semiconductor films. Journal of Applied Physics, 92( 6), 3093-3102. doi:10.1063/1.1500785
NLM
Chambouleyron IE, Ventura SD, Birgin EJG, Martínez JM. Optical constants and thickness determination of very thin amorphous semiconductor films [Internet]. Journal of Applied Physics. 2002 ; 92( 6): 3093-3102.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1500785
Vancouver
Chambouleyron IE, Ventura SD, Birgin EJG, Martínez JM. Optical constants and thickness determination of very thin amorphous semiconductor films [Internet]. Journal of Applied Physics. 2002 ; 92( 6): 3093-3102.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1500785
Artigo de periodico
Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics (2002)
Shapira, Y; Bindilatti, Valdir
Source: Journal of Applied Physics. Unidade: IF
Subjects: MAGNETISMO, SEMICONDUTORES, MUDANÇA DE FASE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SHAPIRA, Y e BINDILATTI, Valdir. Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics. Journal of Applied Physics, v. 92, n. 8, p. 4155-4185, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1507808. Acesso em: 23 nov. 2025.
APA
Shapira, Y., & Bindilatti, V. (2002). Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics. Journal of Applied Physics, 92( 8), 4155-4185. doi:10.1063/1.1507808
NLM
Shapira Y, Bindilatti V. Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics [Internet]. Journal of Applied Physics. 2002 ; 92( 8): 4155-4185.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1507808
Vancouver
Shapira Y, Bindilatti V. Magnetization-step studies of antiferromagnetic clusters and single ions: exchange, anisotropy, and statistics [Internet]. Journal of Applied Physics. 2002 ; 92( 8): 4155-4185.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1507808
Artigo de periodico
Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation (2002)
Antonelli, Alex; Justo Filho, João Francisco ; Fazzio, Adalberto
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, MATERIAIS (PROPRIEDADES ELÉTRICAS), ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ANTONELLI, Alex e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation. Journal of Applied Physics, v. 91, n. 9, p. 5892-5895, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips. Acesso em: 23 nov. 2025.
APA
Antonelli, A., Justo Filho, J. F., & Fazzio, A. (2002). Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation. Journal of Applied Physics, 91( 9), 5892-5895. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
NLM
Antonelli A, Justo Filho JF, Fazzio A. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 5892-5895.[citado 2025 nov. 23 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
Vancouver
Antonelli A, Justo Filho JF, Fazzio A. Interaction of As impurities with 30'GRAUS' partial dislocations in Si: an ab initio investigation [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 5892-5895.[citado 2025 nov. 23 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009005892000001&idtype=cvips
Artigo de periodico
Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers (2002)
Pusep, Yuri A ; Silva, M T O; Fernandez, J R L; Chitta, Valmir Antonio ; Leite, J. R.; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, SEMICONDUTIVIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, v. 91, n. 9, p. 6197-6199, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips. Acesso em: 23 nov. 2025.
APA
Pusep, Y. A., Silva, M. T. O., Fernandez, J. R. L., Chitta, V. A., Leite, J. R., Frey, T., et al. (2002). Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, 91( 9), 6197-6199. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
NLM
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2025 nov. 23 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Vancouver
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2025 nov. 23 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Artigo de periodico
Temperature dependence of optical transitions in AlGaAs (2001)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Meneses, E A; Leite, J. R.; Mazzaro, I
Source: Journal of Applied Physics. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, ÓPTICA, SEMICONDUTORES, DIELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LOURENÇO, S A et al. Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, v. 89, n. 11, p. 6159-6164, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1367875. Acesso em: 23 nov. 2025.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Meneses, E. A., Leite, J. R., & Mazzaro, I. (2001). Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, 89( 11), 6159-6164. doi:10.1063/1.1367875
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1367875
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.1367875
Artigo de periodico
Hydrostatic pressure studies of GaAs tunnel diodes (1998)
Beji, L; El Jani, B; Gibart, P; Portal, J C; Basmaji, Pierre
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BEJI, L et al. Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics, v. 83, n. 10, p. 5573-5575, 1998Tradução . . Disponível em: https://doi.org/10.1063/1.367394. Acesso em: 23 nov. 2025.
APA
Beji, L., El Jani, B., Gibart, P., Portal, J. C., & Basmaji, P. (1998). Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics, 83( 10), 5573-5575. doi:10.1063/1.367394
NLM
Beji L, El Jani B, Gibart P, Portal JC, Basmaji P. Hydrostatic pressure studies of GaAs tunnel diodes [Internet]. Journal of Applied Physics. 1998 ; 83( 10): 5573-5575.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.367394
Vancouver
Beji L, El Jani B, Gibart P, Portal JC, Basmaji P. Hydrostatic pressure studies of GaAs tunnel diodes [Internet]. Journal of Applied Physics. 1998 ; 83( 10): 5573-5575.[citado 2025 nov. 23 ] Available from: https://doi.org/10.1063/1.367394

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