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Artigo de periodico
An alternative experimental approach to produce rare-earth-doped SiOx films (2016)
Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATERIAIS NANOESTRUTURADOS, MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo. An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, v. 119, n. 14, p. 145302-1-145302-5, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4945677. Acesso em: 08 nov. 2025.
APA
Zanatta, A. R. (2016). An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, 119( 14), 145302-1-145302-5. doi:10.1063/1.4945677
NLM
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4945677
Vancouver
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4945677
Artigo de periodico
Exchange-bias phenomena and modeling in nanocrystalline powders of MnO/FeCo and NiO/Fe (2005)
Cornejo, Daniel Reinaldo ; Hernandez, E Padrón; Azevedo, A; Rezende, S M
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MAGNETISMO
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CORNEJO, Daniel Reinaldo et al. Exchange-bias phenomena and modeling in nanocrystalline powders of MnO/FeCo and NiO/Fe. Journal of Applied Physics, v. 97, n. 10, p. 10K103-1/10K103-3, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1847214. Acesso em: 08 nov. 2025.
APA
Cornejo, D. R., Hernandez, E. P., Azevedo, A., & Rezende, S. M. (2005). Exchange-bias phenomena and modeling in nanocrystalline powders of MnO/FeCo and NiO/Fe. Journal of Applied Physics, 97( 10), 10K103-1/10K103-3. doi:10.1063/1.1847214
NLM
Cornejo DR, Hernandez EP, Azevedo A, Rezende SM. Exchange-bias phenomena and modeling in nanocrystalline powders of MnO/FeCo and NiO/Fe [Internet]. Journal of Applied Physics. 2005 ; 97( 10): 10K103-1/10K103-3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1847214
Vancouver
Cornejo DR, Hernandez EP, Azevedo A, Rezende SM. Exchange-bias phenomena and modeling in nanocrystalline powders of MnO/FeCo and NiO/Fe [Internet]. Journal of Applied Physics. 2005 ; 97( 10): 10K103-1/10K103-3.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1847214
Artigo de periodico
Magnetization steps in the phase-separated Cr-doped 'Nd IND. 0.5' 'Ca IND. 0.5' 'MnO IND.3' (2004)
Fonseca, F C; Carneiro, A S; Jardim, Renato de Figueiredo ; O'Brien, J R; kimura, T
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MUDANÇA DE FASE, MAGNETISMO
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FONSECA, F C et al. Magnetization steps in the phase-separated Cr-doped 'Nd IND. 0.5' 'Ca IND. 0.5' 'MnO IND.3'. Journal of Applied Physics, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000011007085000001&idtype=cvips. Acesso em: 08 nov. 2025.
APA
Fonseca, F. C., Carneiro, A. S., Jardim, R. de F., O'Brien, J. R., & kimura, T. (2004). Magnetization steps in the phase-separated Cr-doped 'Nd IND. 0.5' 'Ca IND. 0.5' 'MnO IND.3'. Journal of Applied Physics. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000011007085000001&idtype=cvips
NLM
Fonseca FC, Carneiro AS, Jardim R de F, O'Brien JR, kimura T. Magnetization steps in the phase-separated Cr-doped 'Nd IND. 0.5' 'Ca IND. 0.5' 'MnO IND.3' [Internet]. Journal of Applied Physics. 2004 ;[citado 2025 nov. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000011007085000001&idtype=cvips
Vancouver
Fonseca FC, Carneiro AS, Jardim R de F, O'Brien JR, kimura T. Magnetization steps in the phase-separated Cr-doped 'Nd IND. 0.5' 'Ca IND. 0.5' 'MnO IND.3' [Internet]. Journal of Applied Physics. 2004 ;[citado 2025 nov. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000011007085000001&idtype=cvips
Artigo de periodico
Static and dynamic magnetic properties of spherical magnetite nanoparticles (2003)
Goya, Gerardo Fabían; Berquo, Thelma ; Fonseca, F. C; Morales, M. P
Source: Journal of Applied Physics. Unidade: IF
Subjects: FILMES FINOS, ESPECTROSCOPIA DO MOSSBAUER, MATÉRIA CONDENSADA
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ABNT
GOYA, Gerardo Fabían et al. Static and dynamic magnetic properties of spherical magnetite nanoparticles. Journal of Applied Physics, v. 94, n. 5, p. 3520-3528, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1599959. Acesso em: 08 nov. 2025.
APA
Goya, G. F., Berquo, T., Fonseca, F. C., & Morales, M. P. (2003). Static and dynamic magnetic properties of spherical magnetite nanoparticles. Journal of Applied Physics, 94( 5), 3520-3528. doi:10.1063/1.1599959
NLM
Goya GF, Berquo T, Fonseca FC, Morales MP. Static and dynamic magnetic properties of spherical magnetite nanoparticles [Internet]. Journal of Applied Physics. 2003 ; 94( 5): 3520-3528.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1599959
Vancouver
Goya GF, Berquo T, Fonseca FC, Morales MP. Static and dynamic magnetic properties of spherical magnetite nanoparticles [Internet]. Journal of Applied Physics. 2003 ; 94( 5): 3520-3528.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1599959
Artigo de periodico
Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations (2002)
Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Furthmuller, J; Bechstedt, F
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA DOS SÓLIDOS, MUDANÇA DE FASE, ESTRUTURA ELETRÔNICA
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ABNT
TELES, L. K. et al. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics, v. 92, n. 12, p. 7109-7113, 2002Tradução . . Acesso em: 08 nov. 2025.
APA
Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Furthmuller, J., & Bechstedt, F. (2002). Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics, 92( 12), 7109-7113.
NLM
Teles LK, Scolfaro LMR, Leite JR, Furthmuller J, Bechstedt F. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics. 2002 ; 92( 12): 7109-7113.[citado 2025 nov. 08 ]
Vancouver
Teles LK, Scolfaro LMR, Leite JR, Furthmuller J, Bechstedt F. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics. 2002 ; 92( 12): 7109-7113.[citado 2025 nov. 08 ]
Artigo de periodico
Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4" (2002)
Paduan-Filho, A.; Becerra, Carlos Castilla
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MAGNETISMO, MAGNETISMO
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ABNT
PADUAN-FILHO, A. e BECERRA, Carlos Castilla. Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4". Journal of Applied Physics, v. 91, n. 10, p. 8249-8250, 2002Tradução . . Acesso em: 08 nov. 2025.
APA
Paduan-Filho, A., & Becerra, C. C. (2002). Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4". Journal of Applied Physics, 91( 10), 8249-8250.
NLM
Paduan-Filho A, Becerra CC. Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4". Journal of Applied Physics. 2002 ; 91( 10): 8249-8250.[citado 2025 nov. 08 ]
Vancouver
Paduan-Filho A, Becerra CC. Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet "("CH IND.3""NH IND.3") IND.2" "Mn IND.1-X" "Cd IND.X" "Cl IND.4". Journal of Applied Physics. 2002 ; 91( 10): 8249-8250.[citado 2025 nov. 08 ]
Artigo de periodico
Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5' (2001)
Cruz, Gerson Kniphoff da; Carvalho, René Ayres de; Basso, Heitor Cury
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
CRUZ, Gerson Kniphoff da e CARVALHO, René Ayres de e BASSO, Heitor Cury. Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5'. Journal of Applied Physics, v. 89, n. 4, p. 2194-2201, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1334373. Acesso em: 08 nov. 2025.
APA
Cruz, G. K. da, Carvalho, R. A. de, & Basso, H. C. (2001). Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5'. Journal of Applied Physics, 89( 4), 2194-2201. doi:10.1063/1.1334373
NLM
Cruz GK da, Carvalho RA de, Basso HC. Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5' [Internet]. Journal of Applied Physics. 2001 ;89( 4): 2194-2201.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1334373
Vancouver
Cruz GK da, Carvalho RA de, Basso HC. Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5' [Internet]. Journal of Applied Physics. 2001 ;89( 4): 2194-2201.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1334373
Artigo de periodico
Epitaxial pulsep laser crystallization of amorphous germanium on GaAs (2001)
Santos, P V; Trampert, A; Dondeo, F; Comedi, D; Zhu, H. J.; Ploog, K. H.; Zanatta, Antonio Ricardo ; Chambouleyron, I
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
SANTOS, P V et al. Epitaxial pulsep laser crystallization of amorphous germanium on GaAs. Journal of Applied Physics, v. 90, n. 5, p. 2575-2581, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1390312. Acesso em: 08 nov. 2025.
APA
Santos, P. V., Trampert, A., Dondeo, F., Comedi, D., Zhu, H. J., Ploog, K. H., et al. (2001). Epitaxial pulsep laser crystallization of amorphous germanium on GaAs. Journal of Applied Physics, 90( 5), 2575-2581. doi:10.1063/1.1390312
NLM
Santos PV, Trampert A, Dondeo F, Comedi D, Zhu HJ, Ploog KH, Zanatta AR, Chambouleyron I. Epitaxial pulsep laser crystallization of amorphous germanium on GaAs [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2575-2581.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1390312
Vancouver
Santos PV, Trampert A, Dondeo F, Comedi D, Zhu HJ, Ploog KH, Zanatta AR, Chambouleyron I. Epitaxial pulsep laser crystallization of amorphous germanium on GaAs [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2575-2581.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1390312
Artigo de periodico
Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals (2001)
Mosquera, Luis; Oliveira, I; Frejlich, J; Hernandes, Antônio Carlos ; Lanfredi, Silvania; Carvalho, Jesiel Freitas
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
MOSQUERA, Luis et al. Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals. Journal of Applied Physics, v. 90, n. 6, p. 2635-2641, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1390501. Acesso em: 08 nov. 2025.
APA
Mosquera, L., Oliveira, I., Frejlich, J., Hernandes, A. C., Lanfredi, S., & Carvalho, J. F. (2001). Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals. Journal of Applied Physics, 90( 6), 2635-2641. doi:10.1063/1.1390501
NLM
Mosquera L, Oliveira I, Frejlich J, Hernandes AC, Lanfredi S, Carvalho JF. Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals [Internet]. Journal of Applied Physics. 2001 ;90( 6): 2635-2641.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1390501
Vancouver
Mosquera L, Oliveira I, Frejlich J, Hernandes AC, Lanfredi S, Carvalho JF. Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals [Internet]. Journal of Applied Physics. 2001 ;90( 6): 2635-2641.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1390501
Artigo de periodico
Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films (2001)
Zanatta, Antonio Ricardo ; Ribeiro, C. T. M.; Freire Junior, F L
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C. T. M. e FREIRE JUNIOR, F L. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films. Journal of Applied Physics, v. 90, n. 5, p. 2321-2328, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1388568. Acesso em: 08 nov. 2025.
APA
Zanatta, A. R., Ribeiro, C. T. M., & Freire Junior, F. L. (2001). Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films. Journal of Applied Physics, 90( 5), 2321-2328. doi:10.1063/1.1388568
NLM
Zanatta AR, Ribeiro CTM, Freire Junior FL. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2321-2328.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1388568
Vancouver
Zanatta AR, Ribeiro CTM, Freire Junior FL. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2321-2328.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1388568
Artigo de periodico
Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4' (2001)
Hammer, P; Lacerda, R G; Valente, G M S; Santos, M C; Alvarez, F; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
HAMMER, P et al. Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4'. Journal of Applied Physics, v. 89, n. 12 p.7852-7859, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1372371. Acesso em: 08 nov. 2025.
APA
Hammer, P., Lacerda, R. G., Valente, G. M. S., Santos, M. C., Alvarez, F., & Zanatta, A. R. (2001). Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4'. Journal of Applied Physics, 89( 12 p.7852-7859). doi:10.1063/1.1372371
NLM
Hammer P, Lacerda RG, Valente GMS, Santos MC, Alvarez F, Zanatta AR. Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4' [Internet]. Journal of Applied Physics. 2001 ;89( 12 p.7852-7859):[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1372371
Vancouver
Hammer P, Lacerda RG, Valente GMS, Santos MC, Alvarez F, Zanatta AR. Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4' [Internet]. Journal of Applied Physics. 2001 ;89( 12 p.7852-7859):[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1372371
Artigo de periodico
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces (2001)
Martini, S.; Quivy, A. A.; Tabata, A; Leite, J. R.
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MICROSCOPIA ELETRÔNICA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA, SUPERFÍCIE FÍSICA, TERMODINÂMICA
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ABNT
MARTINI, S. et al. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, v. 90, n. 5, p. 2280-2289, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389336. Acesso em: 08 nov. 2025.
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2001). Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, 90( 5), 2280-2289. doi:10.1063/1.1389336
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1389336
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1389336
Artigo de periodico
Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A ; Silva, M. T. O.; Galzerani, J. C.; Rodrigues, S. C. P.; Scolfaro, L. M. R.; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N. T.; Basmaji, Pierre
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 08 nov. 2025.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Looping mechanism in Er-doped fluoroindogallate glasses (2000)
Bell, M. J. V.; Souza, D. F.; Nunes, Luiz Antônio de Oliveira
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
BELL, M. J. V. e SOUZA, D. F. e NUNES, Luiz Antônio de Oliveira. Looping mechanism in Er-doped fluoroindogallate glasses. Journal of Applied Physics, v. 87, n. 12, p. 8264-8267, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.373536. Acesso em: 08 nov. 2025.
APA
Bell, M. J. V., Souza, D. F., & Nunes, L. A. de O. (2000). Looping mechanism in Er-doped fluoroindogallate glasses. Journal of Applied Physics, 87( 12), 8264-8267. doi:10.1063/1.373536
NLM
Bell MJV, Souza DF, Nunes LA de O. Looping mechanism in Er-doped fluoroindogallate glasses [Internet]. Journal of Applied Physics. 2000 ; 87( 12): 8264-8267.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.373536
Vancouver
Bell MJV, Souza DF, Nunes LA de O. Looping mechanism in Er-doped fluoroindogallate glasses [Internet]. Journal of Applied Physics. 2000 ; 87( 12): 8264-8267.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.373536
Artigo de periodico
´Er POT.3+´:´Yb POT.3+´ codoped lead fluoroindogallate glasses for mid infrared and upconversion applications (1999)
Sousa, Dione Fagundes de; Zonetti, L F C; Bell, Maria José Valenzuela; Lebullenger, Ronan; Hernandes, Antônio Carlos ; Nunes, Luiz Antônio de Oliveira
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
SOUSA, Dione Fagundes de et al. ´Er POT.3+´:´Yb POT.3+´ codoped lead fluoroindogallate glasses for mid infrared and upconversion applications. Journal of Applied Physics, v. 85, n. 5, p. 2502-2507, 1999Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/26f7b9b1-1b71-4cd7-8baa-6567cfdf9cda/PROD005867_1016415.pdf. Acesso em: 08 nov. 2025.
APA
Sousa, D. F. de, Zonetti, L. F. C., Bell, M. J. V., Lebullenger, R., Hernandes, A. C., & Nunes, L. A. de O. (1999). ´Er POT.3+´:´Yb POT.3+´ codoped lead fluoroindogallate glasses for mid infrared and upconversion applications. Journal of Applied Physics, 85( 5), 2502-2507. Recuperado de https://repositorio.usp.br/directbitstream/26f7b9b1-1b71-4cd7-8baa-6567cfdf9cda/PROD005867_1016415.pdf
NLM
Sousa DF de, Zonetti LFC, Bell MJV, Lebullenger R, Hernandes AC, Nunes LA de O. ´Er POT.3+´:´Yb POT.3+´ codoped lead fluoroindogallate glasses for mid infrared and upconversion applications [Internet]. Journal of Applied Physics. 1999 ;85( 5): 2502-2507.[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/26f7b9b1-1b71-4cd7-8baa-6567cfdf9cda/PROD005867_1016415.pdf
Vancouver
Sousa DF de, Zonetti LFC, Bell MJV, Lebullenger R, Hernandes AC, Nunes LA de O. ´Er POT.3+´:´Yb POT.3+´ codoped lead fluoroindogallate glasses for mid infrared and upconversion applications [Internet]. Journal of Applied Physics. 1999 ;85( 5): 2502-2507.[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/26f7b9b1-1b71-4cd7-8baa-6567cfdf9cda/PROD005867_1016415.pdf
Artigo de periodico
Optical excitation of 'Er POT.3+' ions in a-SiN alloys (1999)
Bell, Maria José Valenzuela; Nunes, Luiz Antônio de Oliveira ; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELL, Maria José Valenzuela e NUNES, Luiz Antônio de Oliveira e ZANATTA, Antonio Ricardo. Optical excitation of 'Er POT.3+' ions in a-SiN alloys. Journal of Applied Physics, v. 86, n. 1, p. 338-341, 1999Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/4974c0a3-9d77-400d-8e3e-566fb388502f/PROD006076_1039151.pdf. Acesso em: 08 nov. 2025.
APA
Bell, M. J. V., Nunes, L. A. de O., & Zanatta, A. R. (1999). Optical excitation of 'Er POT.3+' ions in a-SiN alloys. Journal of Applied Physics, 86( 1), 338-341. Recuperado de https://repositorio.usp.br/directbitstream/4974c0a3-9d77-400d-8e3e-566fb388502f/PROD006076_1039151.pdf
NLM
Bell MJV, Nunes LA de O, Zanatta AR. Optical excitation of 'Er POT.3+' ions in a-SiN alloys [Internet]. Journal of Applied Physics. 1999 ;86( 1): 338-341.[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/4974c0a3-9d77-400d-8e3e-566fb388502f/PROD006076_1039151.pdf
Vancouver
Bell MJV, Nunes LA de O, Zanatta AR. Optical excitation of 'Er POT.3+' ions in a-SiN alloys [Internet]. Journal of Applied Physics. 1999 ;86( 1): 338-341.[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/4974c0a3-9d77-400d-8e3e-566fb388502f/PROD006076_1039151.pdf
Artigo de periodico
Evaluation of the energy transfer rate fot the 'Yb POT.3+':'Pr POT.3+' system in lead fluoroindogallate glasses (1999)
Pecoraro, Edison; Sousa, D. F.; Lebullenger, Ronan; Hernandes, Antônio Carlos ; Nunes, Luiz Antônio de Oliveira
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PECORARO, Edison et al. Evaluation of the energy transfer rate fot the 'Yb POT.3+':'Pr POT.3+' system in lead fluoroindogallate glasses. Journal of Applied Physics, v. 86, n. 6, p. 3144-3148, 1999Tradução . . Disponível em: https://doi.org/10.1063/1.371180. Acesso em: 08 nov. 2025.
APA
Pecoraro, E., Sousa, D. F., Lebullenger, R., Hernandes, A. C., & Nunes, L. A. de O. (1999). Evaluation of the energy transfer rate fot the 'Yb POT.3+':'Pr POT.3+' system in lead fluoroindogallate glasses. Journal of Applied Physics, 86( 6), 3144-3148. doi:10.1063/1.371180
NLM
Pecoraro E, Sousa DF, Lebullenger R, Hernandes AC, Nunes LA de O. Evaluation of the energy transfer rate fot the 'Yb POT.3+':'Pr POT.3+' system in lead fluoroindogallate glasses [Internet]. Journal of Applied Physics. 1999 ;86( 6): 3144-3148.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.371180
Vancouver
Pecoraro E, Sousa DF, Lebullenger R, Hernandes AC, Nunes LA de O. Evaluation of the energy transfer rate fot the 'Yb POT.3+':'Pr POT.3+' system in lead fluoroindogallate glasses [Internet]. Journal of Applied Physics. 1999 ;86( 6): 3144-3148.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.371180
Artigo de periodico
Raman study of topology of InAs/GaAs self-assembled quantum dots (1999)
Zanelatto, G; Pusep, Yuri A ; Moshegov, N T; Toropov, A I; Basmaji, Pierre; Galzerani, J C
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANELATTO, G et al. Raman study of topology of InAs/GaAs self-assembled quantum dots. Journal of Applied Physics, v. 86, n. 8, p. 4387-4389, 1999Tradução . . Disponível em: https://doi.org/10.1063/1.371375. Acesso em: 08 nov. 2025.
APA
Zanelatto, G., Pusep, Y. A., Moshegov, N. T., Toropov, A. I., Basmaji, P., & Galzerani, J. C. (1999). Raman study of topology of InAs/GaAs self-assembled quantum dots. Journal of Applied Physics, 86( 8), 4387-4389. doi:10.1063/1.371375
NLM
Zanelatto G, Pusep YA, Moshegov NT, Toropov AI, Basmaji P, Galzerani JC. Raman study of topology of InAs/GaAs self-assembled quantum dots [Internet]. Journal of Applied Physics. 1999 ;86( 8): 4387-4389.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.371375
Vancouver
Zanelatto G, Pusep YA, Moshegov NT, Toropov AI, Basmaji P, Galzerani JC. Raman study of topology of InAs/GaAs self-assembled quantum dots [Internet]. Journal of Applied Physics. 1999 ;86( 8): 4387-4389.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.371375
Artigo de periodico
Optical and structural properties of laser annealed Er-doped amorphous silicon thin films (1999)
Bell, Maria José Valenzuela; Nunes, Luiz Antônio de Oliveira ; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELL, Maria José Valenzuela e NUNES, Luiz Antônio de Oliveira e ZANATTA, Antonio Ricardo. Optical and structural properties of laser annealed Er-doped amorphous silicon thin films. Journal of Applied Physics, v. 86, n. 1, p. 701-703, 1999Tradução . . Disponível em: https://doi.org/10.1063/1.370788. Acesso em: 08 nov. 2025.
APA
Bell, M. J. V., Nunes, L. A. de O., & Zanatta, A. R. (1999). Optical and structural properties of laser annealed Er-doped amorphous silicon thin films. Journal of Applied Physics, 86( 1), 701-703. doi:10.1063/1.370788
NLM
Bell MJV, Nunes LA de O, Zanatta AR. Optical and structural properties of laser annealed Er-doped amorphous silicon thin films [Internet]. Journal of Applied Physics. 1999 ;86( 1): 701-703.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.370788
Vancouver
Bell MJV, Nunes LA de O, Zanatta AR. Optical and structural properties of laser annealed Er-doped amorphous silicon thin films [Internet]. Journal of Applied Physics. 1999 ;86( 1): 701-703.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.370788
Artigo de periodico
'Nd IND.2''O IND.3' doped low silica calcium aluminosilicate glasses: thermomechanical properties (1999)
Baesso, Mauro Luciano; Banto, A C; Duarte, A R; Neto, A M; Miranda, L C M; Sampaio, J. A.; Catunda, Tomaz ; Gama, S; Gandra, F C G
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BAESSO, Mauro Luciano et al. 'Nd IND.2''O IND.3' doped low silica calcium aluminosilicate glasses: thermomechanical properties. Journal of Applied Physics, v. 85, n. 12, p. 8112-8118, 1999Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/9bb7eab3-4dff-4480-bb07-0f340461e0ad/PROD006031_1039168.pdf. Acesso em: 08 nov. 2025.
APA
Baesso, M. L., Banto, A. C., Duarte, A. R., Neto, A. M., Miranda, L. C. M., Sampaio, J. A., et al. (1999). 'Nd IND.2''O IND.3' doped low silica calcium aluminosilicate glasses: thermomechanical properties. Journal of Applied Physics, 85( 12), 8112-8118. Recuperado de https://repositorio.usp.br/directbitstream/9bb7eab3-4dff-4480-bb07-0f340461e0ad/PROD006031_1039168.pdf
NLM
Baesso ML, Banto AC, Duarte AR, Neto AM, Miranda LCM, Sampaio JA, Catunda T, Gama S, Gandra FCG. 'Nd IND.2''O IND.3' doped low silica calcium aluminosilicate glasses: thermomechanical properties [Internet]. Journal of Applied Physics. 1999 ;85( 12): 8112-8118.[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/9bb7eab3-4dff-4480-bb07-0f340461e0ad/PROD006031_1039168.pdf
Vancouver
Baesso ML, Banto AC, Duarte AR, Neto AM, Miranda LCM, Sampaio JA, Catunda T, Gama S, Gandra FCG. 'Nd IND.2''O IND.3' doped low silica calcium aluminosilicate glasses: thermomechanical properties [Internet]. Journal of Applied Physics. 1999 ;85( 12): 8112-8118.[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/9bb7eab3-4dff-4480-bb07-0f340461e0ad/PROD006031_1039168.pdf

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