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Filtros : "Applied Physics Letters" "SANTOS, THALES BORRELY DOS" Removido: "Indexado no Current Contents" Limpar

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  • Artigo de periodico

    Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots (2025)

    Brubach, J. ; Huang, T.-Y. ; Borrely, T ; Greenhill, C ; Walrath, J ; Fedele, G; Yang, Y.-C. ; Zimmerman, A. ; Goldman, R. S.

    Source: Applied Physics Letters. Unidade: IF

    Subjects: DISPOSITIVOS ELETRÔNICOS, SEMICONDUTORES, POÇOS QUÂNTICOS

    Versão PublicadaAcesso à fonteDOIHow to cite
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    • ABNT

      BRUBACH, J. et al. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0244331. Acesso em: 04 nov. 2025.

    • APA

      Brubach, J., Huang, T. -Y., Borrely, T., Greenhill, C., Walrath, J., Fedele, G., et al. (2025). Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. doi:https://doi.org/10.1063/5.0244331

    • NLM

      Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331

    • Vancouver

      Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331

  • Artigo de periodico

    Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers (2024)

    Huang, T.-Y. ; Borrely, T ; Yang, Y.-C. ; Alzeidan, A. ; Jacobsen, G. M. ; Teodoro, M. D. ; Quivy, Alain André ; Goldman, R. S.

    Source: Applied Physics Letters. Unidade: IF

    Subjects: POÇOS QUÂNTICOS, CÉLULAS SOLARES, FOTOLUMINESCÊNCIA, LASER DO ESTADO SÓLIDO

    Versão PublicadaAcesso à fonteDOIHow to cite
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    • ABNT

      HUANG, T.-Y. et al. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, v. 125, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0219815. Acesso em: 04 nov. 2025.

    • APA

      Huang, T. -Y., Borrely, T., Yang, Y. -C., Alzeidan, A., Jacobsen, G. M., Teodoro, M. D., et al. (2024). Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, 125. doi:10.1063/5.0219815

    • NLM

      Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0219815

    • Vancouver

      Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0219815

  • Artigo de periodico

    Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces (2023)

    Huang, T.-Y.; Santos, Thales Borrely dos

    Source: Applied Physics Letters. Unidade: IF

    Subjects: ESPECTROSCOPIA, FOTOLUMINESCÊNCIA

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      HUANG, T.-Y. e SANTOS, Thales Borrely dos. Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces. Applied Physics Letters, v. 123, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0172295. Acesso em: 04 nov. 2025.

    • APA

      Huang, T. -Y., & Santos, T. B. dos. (2023). Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces. Applied Physics Letters, 123. doi:10.1063/5.0172295

    • NLM

      Huang T-Y, Santos TB dos. Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces [Internet]. Applied Physics Letters. 2023 ; 123[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0172295

    • Vancouver

      Huang T-Y, Santos TB dos. Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces [Internet]. Applied Physics Letters. 2023 ; 123[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0172295
  • 1

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