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Artigo de periodico
Revealing localized excitons in WSe2/β-Ga2O3 (2024)
Cavalini, Camila ; Rabahi, César Ricardo ; Brito, Caique Serati de ; Lee, Eunji ; Toledo, José Roberto de ; Cazetta, Felipe Faria ; Oliveira, Raphael Brenon Fernandes de ; Andrade, Marcelo Barbosa de ; Henini, Mohamed ; Zhang, Yuhao ; Kim, Jeongyong ; Barcelos, Ingrid David ; Gobato, Yara Galvão
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÓPTICA, FOTÔNICA, FOTOLUMINESCÊNCIA
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ABNT
CAVALINI, Camila et al. Revealing localized excitons in WSe2/β-Ga2O3. Applied Physics Letters, v. 124, n. 14, p. 142104-1-142104-7 + supplementary material, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0203628. Acesso em: 04 nov. 2025.
APA
Cavalini, C., Rabahi, C. R., Brito, C. S. de, Lee, E., Toledo, J. R. de, Cazetta, F. F., et al. (2024). Revealing localized excitons in WSe2/β-Ga2O3. Applied Physics Letters, 124( 14), 142104-1-142104-7 + supplementary material. doi:10.1063/5.0203628
NLM
Cavalini C, Rabahi CR, Brito CS de, Lee E, Toledo JR de, Cazetta FF, Oliveira RBF de, Andrade MB de, Henini M, Zhang Y, Kim J, Barcelos ID, Gobato YG. Revealing localized excitons in WSe2/β-Ga2O3 [Internet]. Applied Physics Letters. 2024 ; 124( 14): 142104-1-142104-7 + supplementary material.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0203628
Vancouver
Cavalini C, Rabahi CR, Brito CS de, Lee E, Toledo JR de, Cazetta FF, Oliveira RBF de, Andrade MB de, Henini M, Zhang Y, Kim J, Barcelos ID, Gobato YG. Revealing localized excitons in WSe2/β-Ga2O3 [Internet]. Applied Physics Letters. 2024 ; 124( 14): 142104-1-142104-7 + supplementary material.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0203628
Artigo de periodico
Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers (2024)
Huang, T.-Y. ; Borrely, T ; Yang, Y.-C. ; Alzeidan, A. ; Jacobsen, G. M. ; Teodoro, M. D. ; Quivy, Alain André ; Goldman, R. S.
Source: Applied Physics Letters. Unidade: IF
Subjects: POÇOS QUÂNTICOS, CÉLULAS SOLARES, FOTOLUMINESCÊNCIA, LASER DO ESTADO SÓLIDO
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HUANG, T.-Y. et al. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, v. 125, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0219815. Acesso em: 04 nov. 2025.
APA
Huang, T. -Y., Borrely, T., Yang, Y. -C., Alzeidan, A., Jacobsen, G. M., Teodoro, M. D., et al. (2024). Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers. Applied Physics Letters, 125. doi:10.1063/5.0219815
NLM
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0219815
Vancouver
Huang T-Y, Borrely T, Yang Y-C, Alzeidan A, Jacobsen GM, Teodoro MD, Quivy AA, Goldman RS. Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers [Internet]. Applied Physics Letters. 2024 ; 125[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0219815
Artigo de periodico
Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces (2023)
Huang, T.-Y.; Santos, Thales Borrely dos
Source: Applied Physics Letters. Unidade: IF
Subjects: ESPECTROSCOPIA, FOTOLUMINESCÊNCIA
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ABNT
HUANG, T.-Y. e SANTOS, Thales Borrely dos. Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces. Applied Physics Letters, v. 123, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0172295. Acesso em: 04 nov. 2025.
APA
Huang, T. -Y., & Santos, T. B. dos. (2023). Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces. Applied Physics Letters, 123. doi:10.1063/5.0172295
NLM
Huang T-Y, Santos TB dos. Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces [Internet]. Applied Physics Letters. 2023 ; 123[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0172295
Vancouver
Huang T-Y, Santos TB dos. Probing conduction band offsets and confined states at 'GA'AS'/'GA''AS'N''BI' heterointerfaces [Internet]. Applied Physics Letters. 2023 ; 123[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0172295
Artigo de periodico
A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential (2010)
Pusep, Yuri A ; Mohseni, P. K.; LaPierre, R. R.; Bakarov, A. K.; Toropov, A. I.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, ELÉTRONS (ESTUDO)
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PUSEP, Yuri A et al. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, v. 96, n. 11, p. 113106-1-113106-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3364138. Acesso em: 04 nov. 2025.
APA
Pusep, Y. A., Mohseni, P. K., LaPierre, R. R., Bakarov, A. K., & Toropov, A. I. (2010). A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, 96( 11), 113106-1-113106-3. doi:10.1063/1.3364138
NLM
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
Vancouver
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
Artigo de periodico
Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer (2009)
Mendonça, Cleber Renato ; Correa, D. S.; Marlow, F.; Voss, T.; Tayalia, P.; Mazur, E.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POLÍMEROS (MATERIAIS), FILMES FINOS, FOTÔNICA, POLIMERIZAÇÃO
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ABNT
MENDONÇA, Cleber Renato et al. Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer. Applied Physics Letters, v. 95, n. 11, p. 113309-1-113309-3, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3232207. Acesso em: 04 nov. 2025.
APA
Mendonça, C. R., Correa, D. S., Marlow, F., Voss, T., Tayalia, P., & Mazur, E. (2009). Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer. Applied Physics Letters, 95( 11), 113309-1-113309-3. doi:10.1063/1.3232207
NLM
Mendonça CR, Correa DS, Marlow F, Voss T, Tayalia P, Mazur E. Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer [Internet]. Applied Physics Letters. 2009 ; 95( 11): 113309-1-113309-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3232207
Vancouver
Mendonça CR, Correa DS, Marlow F, Voss T, Tayalia P, Mazur E. Three-dimensional fabrication of optically active microstructures containing an electroluminescent polymer [Internet]. Applied Physics Letters. 2009 ; 95( 11): 113309-1-113309-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3232207
Artigo de periodico
Interface roughness in short-period InGaAs/InP superlattices (2008)
Pusep, Yuri A ; Gozzo, G. C.; La Pierre, R. R.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, FÍSICA DA MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, MAGNETISMO
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ABNT
PUSEP, Yuri A e GOZZO, G. C. e LA PIERRE, R. R. Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, v. 93, n. 24, p. 242104-1-242104-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.3050531. Acesso em: 04 nov. 2025.
APA
Pusep, Y. A., Gozzo, G. C., & La Pierre, R. R. (2008). Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, 93( 24), 242104-1-242104-3. doi:10.1063/1.3050531
NLM
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3050531
Vancouver
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3050531
Artigo de periodico
Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers (2008)
Rubinger, Carla Patricia Lacerda; Costa, L. C.; Macatrão, M.; Peres, M.; Monteiro, T.; Costa, F. M.; Franco, N.; Alves, E.; Saggioro, Bruno Zaniboni; Andreeta, Marcello Rubens Barsi ; Hernandes, Antônio Carlos
Source: Applied Physics Letters. Unidade: IFSC
Subjects: TECNOLOGIA DE MICRO-ONDAS, LUMINESCÊNCIA, DIELÉTRICOS (PROPRIEDADES), LASER, FOTOLUMINESCÊNCIA, CERÂMICA, FILMES FINOS
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RUBINGER, Carla Patricia Lacerda et al. Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers. Applied Physics Letters, v. 92, n. 25, p. 252904-1-252904-2, 2008Tradução . . Acesso em: 04 nov. 2025.
APA
Rubinger, C. P. L., Costa, L. C., Macatrão, M., Peres, M., Monteiro, T., Costa, F. M., et al. (2008). Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers. Applied Physics Letters, 92( 25), 252904-1-252904-2.
NLM
Rubinger CPL, Costa LC, Macatrão M, Peres M, Monteiro T, Costa FM, Franco N, Alves E, Saggioro BZ, Andreeta MRB, Hernandes AC. Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers. Applied Physics Letters. 2008 ; 92( 25): 252904-1-252904-2.[citado 2025 nov. 04 ]
Vancouver
Rubinger CPL, Costa LC, Macatrão M, Peres M, Monteiro T, Costa FM, Franco N, Alves E, Saggioro BZ, Andreeta MRB, Hernandes AC. Microwave dielectric permittivity and photoluminescence of 'Eu IND.2''O IND.3'doped laser heated pedestal growth 'Ta IND.2''O IND.5' fibers. Applied Physics Letters. 2008 ; 92( 25): 252904-1-252904-2.[citado 2025 nov. 04 ]
Artigo de periodico
Higly intense violet-blue light emission at room temperature in structurally disordered SrZr 'O IND. 3' powders (2007)
Longo, V. M.; Cavalcante, Laécio S.; Figueiredo, Alberthmeiry Teixeira de; Santos, L. P. S.; Longo, Elson; Varela, Jacobo A.; Sambrano, Julio Ricardo; Paskocimas, Carlos Alberto; De Vicente, Fábio Simões ; Hernandes, Antônio Carlos
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, TEMPERATURA
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LONGO, V. M. et al. Higly intense violet-blue light emission at room temperature in structurally disordered SrZr 'O IND. 3' powders. Applied Physics Letters, v. 90, n. 9, p. 091906-1-091906-3, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2709992. Acesso em: 04 nov. 2025.
APA
Longo, V. M., Cavalcante, L. S., Figueiredo, A. T. de, Santos, L. P. S., Longo, E., Varela, J. A., et al. (2007). Higly intense violet-blue light emission at room temperature in structurally disordered SrZr 'O IND. 3' powders. Applied Physics Letters, 90( 9), 091906-1-091906-3. doi:10.1063/1.2709992
NLM
Longo VM, Cavalcante LS, Figueiredo AT de, Santos LPS, Longo E, Varela JA, Sambrano JR, Paskocimas CA, De Vicente FS, Hernandes AC. Higly intense violet-blue light emission at room temperature in structurally disordered SrZr 'O IND. 3' powders [Internet]. Applied Physics Letters. 2007 ; 90( 9): 091906-1-091906-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2709992
Vancouver
Longo VM, Cavalcante LS, Figueiredo AT de, Santos LPS, Longo E, Varela JA, Sambrano JR, Paskocimas CA, De Vicente FS, Hernandes AC. Higly intense violet-blue light emission at room temperature in structurally disordered SrZr 'O IND. 3' powders [Internet]. Applied Physics Letters. 2007 ; 90( 9): 091906-1-091906-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2709992
Artigo de periodico
Relation between photoluminescence emission and local order-disorder in the CaTi'O IND.3' lattice modifier (2007)
Lazaro, Sérgio R.; Milanez, Juliana; Figueiredo, Alberthmeiry Teixeira de; Longo, Valéria M.; Mastelaro, Valmor Roberto ; De Vicente, Fábio Simões ; Hernandes, Antônio Carlos ; Varela, José Arana; Longo, Elson
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, RAIOS X
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LAZARO, Sérgio R. et al. Relation between photoluminescence emission and local order-disorder in the CaTi'O IND.3' lattice modifier. Applied Physics Letters, v. 90, n. 11, p. 111904-1-111904-3, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2713359. Acesso em: 04 nov. 2025.
APA
Lazaro, S. R., Milanez, J., Figueiredo, A. T. de, Longo, V. M., Mastelaro, V. R., De Vicente, F. S., et al. (2007). Relation between photoluminescence emission and local order-disorder in the CaTi'O IND.3' lattice modifier. Applied Physics Letters, 90( 11), 111904-1-111904-3. doi:10.1063/1.2713359
NLM
Lazaro SR, Milanez J, Figueiredo AT de, Longo VM, Mastelaro VR, De Vicente FS, Hernandes AC, Varela JA, Longo E. Relation between photoluminescence emission and local order-disorder in the CaTi'O IND.3' lattice modifier [Internet]. Applied Physics Letters. 2007 ; 90( 11): 111904-1-111904-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2713359
Vancouver
Lazaro SR, Milanez J, Figueiredo AT de, Longo VM, Mastelaro VR, De Vicente FS, Hernandes AC, Varela JA, Longo E. Relation between photoluminescence emission and local order-disorder in the CaTi'O IND.3' lattice modifier [Internet]. Applied Physics Letters. 2007 ; 90( 11): 111904-1-111904-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2713359
Artigo de periodico
Mechanisms behind blue, green, and red photoluminescence emissions in CaW'O IND. 4' and CaMo'O IND. 4' powders (2007)
Campos, A. B.; Simões, A. Z.; Longo, E.; Varela, J. A.; Longo, V. M.; Figueiredo, A. T. de; De Vicente, Fábio Simões ; Hernandes, Antônio Carlos
Source: Applied Physics Letters. Unidade: IFSC
Subjects: LUMINESCÊNCIA, FOTOLUMINESCÊNCIA, CRISTALOGRAFIA
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ABNT
CAMPOS, A. B. et al. Mechanisms behind blue, green, and red photoluminescence emissions in CaW'O IND. 4' and CaMo'O IND. 4' powders. Applied Physics Letters, v. 91, n. 5, p. 051923-1-051923-3, 2007Tradução . . Acesso em: 04 nov. 2025.
APA
Campos, A. B., Simões, A. Z., Longo, E., Varela, J. A., Longo, V. M., Figueiredo, A. T. de, et al. (2007). Mechanisms behind blue, green, and red photoluminescence emissions in CaW'O IND. 4' and CaMo'O IND. 4' powders. Applied Physics Letters, 91( 5), 051923-1-051923-3.
NLM
Campos AB, Simões AZ, Longo E, Varela JA, Longo VM, Figueiredo AT de, De Vicente FS, Hernandes AC. Mechanisms behind blue, green, and red photoluminescence emissions in CaW'O IND. 4' and CaMo'O IND. 4' powders. Applied Physics Letters. 2007 ; 91( 5): 051923-1-051923-3.[citado 2025 nov. 04 ]
Vancouver
Campos AB, Simões AZ, Longo E, Varela JA, Longo VM, Figueiredo AT de, De Vicente FS, Hernandes AC. Mechanisms behind blue, green, and red photoluminescence emissions in CaW'O IND. 4' and CaMo'O IND. 4' powders. Applied Physics Letters. 2007 ; 91( 5): 051923-1-051923-3.[citado 2025 nov. 04 ]
Artigo de periodico
Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3' (2007)
Volanti, D. P.; Cavalcante, L. S.; Paris, E. C.; Simões, A. Z.; Keyson, D.; Longo, V. M.; Figueiredo, A. T. de; Longo, E.; Varela, J. A.; De Vicente, Fábio Simões ; Hernandes, Antônio Carlos
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FILMES FINOS, FOTOLUMINESCÊNCIA, BAIXA TEMPERATURA
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VOLANTI, D. P. et al. Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3'. Applied Physics Letters, v. 90, n. Ju 2007, p. 261913-2-261913-3, 2007Tradução . . Acesso em: 04 nov. 2025.
APA
Volanti, D. P., Cavalcante, L. S., Paris, E. C., Simões, A. Z., Keyson, D., Longo, V. M., et al. (2007). Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3'. Applied Physics Letters, 90( Ju 2007), 261913-2-261913-3.
NLM
Volanti DP, Cavalcante LS, Paris EC, Simões AZ, Keyson D, Longo VM, Figueiredo AT de, Longo E, Varela JA, De Vicente FS, Hernandes AC. Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3'. Applied Physics Letters. 2007 ; 90( Ju 2007): 261913-2-261913-3.[citado 2025 nov. 04 ]
Vancouver
Volanti DP, Cavalcante LS, Paris EC, Simões AZ, Keyson D, Longo VM, Figueiredo AT de, Longo E, Varela JA, De Vicente FS, Hernandes AC. Photolominescent behavior of Sr'Bi IND. 2''Nb IND. 2''O IND. 9' powders explained by means of 'beta'-'Bi IND. 2'O IND. 3'. Applied Physics Letters. 2007 ; 90( Ju 2007): 261913-2-261913-3.[citado 2025 nov. 04 ]
Artigo de periodico
Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films (2002)
Gobato, Yara Galvao; Marletta, Alexandre; Faria, Roberto Mendonça ; Guimarães, Francisco Eduardo Gontijo ; Souza, J M; Pereira, E C
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA
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GOBATO, Yara Galvao et al. Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films. Applied Physics Letters, v. 81, n. 5, p. 942-944, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1497198. Acesso em: 04 nov. 2025.
APA
Gobato, Y. G., Marletta, A., Faria, R. M., Guimarães, F. E. G., Souza, J. M., & Pereira, E. C. (2002). Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films. Applied Physics Letters, 81( 5), 942-944. doi:10.1063/1.1497198
NLM
Gobato YG, Marletta A, Faria RM, Guimarães FEG, Souza JM, Pereira EC. Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2002 ;81( 5): 942-944.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1497198
Vancouver
Gobato YG, Marletta A, Faria RM, Guimarães FEG, Souza JM, Pereira EC. Photoinduced photoluminescence intensity enhancement in poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2002 ;81( 5): 942-944.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1497198
Artigo de periodico
Visible photoluminescence in amorphous 'ABO IND. 3' perovskites (2002)
Pizani, Paulo Sérgio; Basso, Heitor Cury; Lanciotti Junior, Francesco; Boschi, T. M.; Pontes, F. M; Silva, Elson Longo da; Leite, Édson Roberto
Source: Applied Physics Letters. Unidade: EESC
Assunto: FOTOLUMINESCÊNCIA
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ABNT
PIZANI, Paulo Sérgio et al. Visible photoluminescence in amorphous 'ABO IND. 3' perovskites. Applied Physics Letters, v. 81, n. 2, p. 253-255, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000002000253000001&idtype=cvips. Acesso em: 04 nov. 2025.
APA
Pizani, P. S., Basso, H. C., Lanciotti Junior, F., Boschi, T. M., Pontes, F. M., Silva, E. L. da, & Leite, É. R. (2002). Visible photoluminescence in amorphous 'ABO IND. 3' perovskites. Applied Physics Letters, 81( 2), 253-255. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000002000253000001&idtype=cvips
NLM
Pizani PS, Basso HC, Lanciotti Junior F, Boschi TM, Pontes FM, Silva EL da, Leite ÉR. Visible photoluminescence in amorphous 'ABO IND. 3' perovskites [Internet]. Applied Physics Letters. 2002 ; 81( 2): 253-255.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000002000253000001&idtype=cvips
Vancouver
Pizani PS, Basso HC, Lanciotti Junior F, Boschi TM, Pontes FM, Silva EL da, Leite ÉR. Visible photoluminescence in amorphous 'ABO IND. 3' perovskites [Internet]. Applied Physics Letters. 2002 ; 81( 2): 253-255.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000002000253000001&idtype=cvips
Artigo de periodico
Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure (2001)
Husberg, O; Khartchenko, A; As, D J; Vogelsang, H; Frey, T; Schikora, D; Noriega, O C; Tabata, A; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
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ABNT
HUSBERG, O et al. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure. Applied Physics Letters, v. 79, n. 9, p. 1243-1245, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1396314. Acesso em: 04 nov. 2025.
APA
Husberg, O., Khartchenko, A., As, D. J., Vogelsang, H., Frey, T., Schikora, D., et al. (2001). Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure. Applied Physics Letters, 79( 9), 1243-1245. doi:10.1063/1.1396314
NLM
Husberg O, Khartchenko A, As DJ, Vogelsang H, Frey T, Schikora D, Noriega OC, Tabata A, Leite JR. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure [Internet]. Applied Physics Letters. 2001 ; 79( 9): 1243-1245.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1396314
Vancouver
Husberg O, Khartchenko A, As DJ, Vogelsang H, Frey T, Schikora D, Noriega OC, Tabata A, Leite JR. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure [Internet]. Applied Physics Letters. 2001 ; 79( 9): 1243-1245.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1396314
Artigo de periodico
Tailoring of light emission properties of functionalized oligothiophenes (2001)
Caldas, Marilia Junqueira ; Pettenati, Emanuele; Goldoni, Guido; Molinari, Elisa
Source: Applied Physics Letters. Unidade: IF
Subjects: EMISSÃO DA LUZ (PROPRIEDADES), FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CALDAS, Marilia Junqueira et al. Tailoring of light emission properties of functionalized oligothiophenes. Applied Physics Letters, v. 79, n. 16, p. 2505-2507, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389325. Acesso em: 04 nov. 2025.
APA
Caldas, M. J., Pettenati, E., Goldoni, G., & Molinari, E. (2001). Tailoring of light emission properties of functionalized oligothiophenes. Applied Physics Letters, 79( 16), 2505-2507. doi:10.1063/1.1389325
NLM
Caldas MJ, Pettenati E, Goldoni G, Molinari E. Tailoring of light emission properties of functionalized oligothiophenes [Internet]. Applied Physics Letters. 2001 ; 79( 16): 2505-2507.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1389325
Vancouver
Caldas MJ, Pettenati E, Goldoni G, Molinari E. Tailoring of light emission properties of functionalized oligothiophenes [Internet]. Applied Physics Letters. 2001 ; 79( 16): 2505-2507.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1389325

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