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Artigo de periodico
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs (2017)
Bordallo, Caio Cesar Mendes ; Collaert, Nadine ; Claeys, Cor ; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Mols, Yannick; Alian, A; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, SEMICONDUTORES
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ABNT
BORDALLO, Caio Cesar Mendes et al. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, v. 64, n. 9, p. 3595-3600, 2017Tradução . . Disponível em: https://doi.org/10.1109/ted.2017.2721110. Acesso em: 13 nov. 2024.
APA
Bordallo, C. C. M., Collaert, N., Claeys, C., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2017). The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, 64( 9), 3595-3600. doi:10.1109/ted.2017.2721110
NLM
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1109/ted.2017.2721110
Vancouver
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1109/ted.2017.2721110
Artigo de periodico
Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K (2016)
Bordallo, Caio Cesar Mendes ; Vandooren, A; Rooyackers, Rita; Mols, Yannick; Alian, A; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: SEMICONDUTORES, MICROELETRÔNICA
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ABNT
BORDALLO, Caio Cesar Mendes et al. Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K. Semiconductor Science and Technology, v. 31, n. 12, p. 124001, 2016Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/31/12/124001. Acesso em: 13 nov. 2024.
APA
Bordallo, C. C. M., Vandooren, A., Rooyackers, R., Mols, Y., Alian, A., Agopian, P. G. D., & Martino, J. A. (2016). Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K. Semiconductor Science and Technology, 31( 12), 124001. doi:10.1088/0268-1242/31/12/124001
NLM
Bordallo CCM, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K [Internet]. Semiconductor Science and Technology. 2016 ; 31( 12): 124001.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1088/0268-1242/31/12/124001
Vancouver
Bordallo CCM, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K [Internet]. Semiconductor Science and Technology. 2016 ; 31( 12): 124001.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1088/0268-1242/31/12/124001
Artigo de periodico
Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs (2015)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Santos, Sara Dereste dos; Rooyackers, Rita; Vandoren, A
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, TRANSISTORES, SILÍCIO
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ABNT
AGOPIAN, Paula Ghedini Der et al. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, v. 62, n. Ja 2015, p. 16-22, 2015Tradução . . Disponível em: https://doi.org/10.1109/ted.2014.2367659. Acesso em: 13 nov. 2024.
APA
Agopian, P. G. D., Martino, J. A., Santos, S. D. dos, Rooyackers, R., & Vandoren, A. (2015). Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, 62( Ja 2015), 16-22. doi:10.1109/ted.2014.2367659
NLM
Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1109/ted.2014.2367659
Vancouver
Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1109/ted.2014.2367659
Artigo de periodico
Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism (2015)
Martino, Márcio Dalla Valle; Thean, Aaron; Claeys, Cor ; Neves, Felipe S; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Vandooren, A; Rooyackers, Rita; Simoen, Eddy
Source: Solid-State Electronics. Unidade: EP
Subjects: TRANSISTORES, MICROELETRÔNICA
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ABNT
MARTINO, Márcio Dalla Valle et al. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism. Solid-State Electronics, v. 112, p. 51-55, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2015.02.006. Acesso em: 13 nov. 2024.
APA
Martino, M. D. V., Thean, A., Claeys, C., Neves, F. S., Agopian, P. G. D., Martino, J. A., et al. (2015). Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism. Solid-State Electronics, 112, 51-55. doi:10.1016/j.sse.2015.02.006
NLM
Martino MDV, Thean A, Claeys C, Neves FS, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism [Internet]. Solid-State Electronics. 2015 ; 112 51-55.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/j.sse.2015.02.006
Vancouver
Martino MDV, Thean A, Claeys C, Neves FS, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism [Internet]. Solid-State Electronics. 2015 ; 112 51-55.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1016/j.sse.2015.02.006
Trabalho de evento
Influence of interface trap density on vertical NW-TFETs with different source composition (2013)
Martino, João Antonio ; Souza, Felipe Neves; Agopian, Paula Ghedini Der ; Rooyackers, Rita; Vandooren, A.; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
MARTINO, João Antonio et al. Influence of interface trap density on vertical NW-TFETs with different source composition. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 13 nov. 2024.
APA
Martino, J. A., Souza, F. N., Agopian, P. G. D., Rooyackers, R., Vandooren, A., Simoen, E., & Claeys, C. (2013). Influence of interface trap density on vertical NW-TFETs with different source composition. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 nov. 13 ]
Vancouver
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 nov. 13 ]
Trabalho de evento
Temperature influence on nanowire tunnel field effect transistors (2012)
Neves, Felipe Souza; Martino, Márcio Dalla Valle; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita ; Leonelli, Daniele ; Claeys, Cor
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NEVES, Felipe Souza et al. Temperature influence on nanowire tunnel field effect transistors. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0223ecst. Acesso em: 13 nov. 2024.
APA
Neves, F. S., Martino, M. D. V., Agopian, P. G. D., Martino, J. A., Rooyackers, R., Leonelli, D., & Claeys, C. (2012). Temperature influence on nanowire tunnel field effect transistors. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0223ecst
NLM
Neves FS, Martino MDV, Agopian PGD, Martino JA, Rooyackers R, Leonelli D, Claeys C. Temperature influence on nanowire tunnel field effect transistors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 nov. 13 ] Available from: https://doi.org/10.1149/04901.0223ecst
Vancouver
Neves FS, Martino MDV, Agopian PGD, Martino JA, Rooyackers R, Leonelli D, Claeys C. Temperature influence on nanowire tunnel field effect transistors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 nov. 13 ] Available from: https://doi.org/10.1149/04901.0223ecst
Trabalho de evento
Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs (2008)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita; Collaert, Nadine ; Claeys, Cor
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 13 nov. 2024.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Rooyackers, R., Collaert, N., & Claeys, C. (2008). Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. SBMICRO 2008: Anais. 2008 ;[citado 2024 nov. 13 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. SBMICRO 2008: Anais. 2008 ;[citado 2024 nov. 13 ]
Trabalho de evento
Low temperature operation of undoped body triple-gate finFETs from an analog perspective (2007)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita; Collaert, Nadine ; Claeys, Cor
Source: SBMicro 2007. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Low temperature operation of undoped body triple-gate finFETs from an analog perspective. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 13 nov. 2024.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Rooyackers, R., Collaert, N., & Claeys, C. (2007). Low temperature operation of undoped body triple-gate finFETs from an analog perspective. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Low temperature operation of undoped body triple-gate finFETs from an analog perspective. SBMicro 2007. 2007 ;[citado 2024 nov. 13 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Low temperature operation of undoped body triple-gate finFETs from an analog perspective. SBMicro 2007. 2007 ;[citado 2024 nov. 13 ]

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