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  • Trabalho de evento-resumo

    Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels (2025)

    Pusep, Yuri A ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat

    Source: Program. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidades: IFSC, IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels. 2025, Anais.. Singapore: International Union of Pure and Applied Physics - IUPAP, 2025. Disponível em: https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070. Acesso em: 08 nov. 2025.

    • APA

      Pusep, Y. A., Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., & Bakarov, A. (2025). Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels. In Program. Singapore: International Union of Pure and Applied Physics - IUPAP. Recuperado de https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070

    • NLM

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels [Internet]. Program. 2025 ;[citado 2025 nov. 08 ] Available from: https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070

    • Vancouver

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole fluid in mesoscopic GaAs channels [Internet]. Program. 2025 ;[citado 2025 nov. 08 ] Available from: https://airdrive.eventsair.com/eventsaircaneprod/production-uottawacpd-public/71c8921a310a4f29b442df16673af070

  • Artigo de periodico

    Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots (2025)

    Brubach, J. ; Huang, T.-Y. ; Borrely, T ; Greenhill, C ; Walrath, J ; Fedele, G; Yang, Y.-C. ; Zimmerman, A. ; Goldman, R. S.

    Source: Applied Physics Letters. Unidade: IF

    Subjects: DISPOSITIVOS ELETRÔNICOS, SEMICONDUTORES, POÇOS QUÂNTICOS

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      BRUBACH, J. et al. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0244331. Acesso em: 08 nov. 2025.

    • APA

      Brubach, J., Huang, T. -Y., Borrely, T., Greenhill, C., Walrath, J., Fedele, G., et al. (2025). Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. doi:https://doi.org/10.1063/5.0244331

    • NLM

      Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0244331

    • Vancouver

      Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0244331

  • Artigo de periodico

    Hydrodynamics of electron-hole Coulomb drag (2025)

    Pusep, Yuri A ; Patricio, Marco Antonio Tito ; Glazov, Mikhail ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat

    Source: Physical Review Research. Unidades: IFSC, IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Hydrodynamics of electron-hole Coulomb drag. Physical Review Research, v. 7, n. 4, p. 043062-1-043062-8, 2025Tradução . . Disponível em: https://doi.org/10.1103/71yh-kprh. Acesso em: 08 nov. 2025.

    • APA

      Pusep, Y. A., Patricio, M. A. T., Glazov, M., Jacobsen, G. M., Teodoro, M. D., Gusev, G., & Bakarov, A. (2025). Hydrodynamics of electron-hole Coulomb drag. Physical Review Research, 7( 4), 043062-1-043062-8. doi:10.1103/71yh-kprh

    • NLM

      Pusep YA, Patricio MAT, Glazov M, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Physical Review Research. 2025 ; 7( 4): 043062-1-043062-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/71yh-kprh

    • Vancouver

      Pusep YA, Patricio MAT, Glazov M, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Physical Review Research. 2025 ; 7( 4): 043062-1-043062-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/71yh-kprh

  • Trabalho de evento-resumo

    Hydrodynamics of electron-hole Coulomb drag (2025)

    Pusep, Yuri A ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat

    Source: Abstract Book. Conference titles: International Conference on Nanomaterials Science and Mechanical Engineering. Unidades: IFSC, IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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    • ABNT

      PUSEP, Yuri A et al. Hydrodynamics of electron-hole Coulomb drag. 2025, Anais.. Aveiro: Universidade de Aveiro, 2025. Disponível em: https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf. Acesso em: 08 nov. 2025.

    • APA

      Pusep, Y. A., Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., & Bakarov, A. (2025). Hydrodynamics of electron-hole Coulomb drag. In Abstract Book. Aveiro: Universidade de Aveiro. Recuperado de https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf

    • NLM

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Abstract Book. 2025 ;[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf

    • Vancouver

      Pusep YA, Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A. Hydrodynamics of electron-hole Coulomb drag [Internet]. Abstract Book. 2025 ;[citado 2025 nov. 08 ] Available from: https://repositorio.usp.br/directbitstream/b3adc728-9813-4e4d-8c57-ffbb9ee43524/3267491.pdf

  • Artigo de periodico

    Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)

    Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da

    Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES

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      SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 08 nov. 2025.

    • APA

      Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962

    • NLM

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962

    • Vancouver

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962

  • Artigo de periodico

    Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel (2024)

    Pusep, Yuri A ; Teodoro, Marcio Daldin ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Gusev, Gennady ; Bakarov, Askhat

    Source: Physical Review B. Unidades: IFSC, IF

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, v. 109, n. 7, p. 075429-1-075429-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.075429. Acesso em: 08 nov. 2025.

    • APA

      Pusep, Y. A., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., & Bakarov, A. (2024). Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, 109( 7), 075429-1-075429-6. doi:10.1103/PhysRevB.109.075429

    • NLM

      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429

    • Vancouver

      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429

  • Artigo de periodico

    Magnetic field breakdown of electron hydrodynamics (2024)

    Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Oliveira, Vinicius Andrade de ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri A

    Source: Physical Review B. Unidades: IF, IFSC

    Subjects: FOTOLUMINESCÊNCIA, CAMPO ELETROMAGNÉTICO, SEMICONDUTORES

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      PATRICIO, Marco Antonio Tito et al. Magnetic field breakdown of electron hydrodynamics. Physical Review B, v. 110, n. 4, p. 45411-1-45411-5, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.110.045411. Acesso em: 08 nov. 2025.

    • APA

      Patricio, M. A. T., Jacobsen, G. M., Oliveira, V. A. de, Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Magnetic field breakdown of electron hydrodynamics. Physical Review B, 110( 4), 45411-1-45411-5. doi:10.1103/PhysRevB.110.045411

    • NLM

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411

    • Vancouver

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411

  • Artigo de periodico

    Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites (2024)

    Sabino, Fernando Pereira ; Zhao, Xin Gang; Dalpian, Gustavo Martini ; Zunger, Alex

    Source: Physical Review B. Unidade: IF

    Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES

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      SABINO, Fernando Pereira et al. Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites. Physical Review B, v. 110, n. 3, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.110.035160. Acesso em: 08 nov. 2025.

    • APA

      Sabino, F. P., Zhao, X. G., Dalpian, G. M., & Zunger, A. (2024). Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites. Physical Review B, 110( 3). doi:10.1103/PhysRevB.110.035160

    • NLM

      Sabino FP, Zhao XG, Dalpian GM, Zunger A. Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites [Internet]. Physical Review B. 2024 ; 110( 3):[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.110.035160

    • Vancouver

      Sabino FP, Zhao XG, Dalpian GM, Zunger A. Impact of symmetry breaking and spin-orbit coupling on the band gap of halide perovskites [Internet]. Physical Review B. 2024 ; 110( 3):[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.110.035160

  • Artigo de periodico

    Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel (2024)

    Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri A

    Source: Physical Review B. Unidades: IF, IFSC

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO

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      PATRICIO, Marco Antonio Tito et al. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, v. 109, n. 12, p. L121401-1-L121401-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.L121401. Acesso em: 08 nov. 2025.

    • APA

      Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, 109( 12), L121401-1-L121401-6. doi:10.1103/PhysRevB.109.L121401

    • NLM

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401

    • Vancouver

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401

  • Artigo de periodico

    Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure (2023)

    Izquierdo, Jose Enrique Eirez ; Cavallari, Marco Roberto ; García, Dennis Cabrera ; Fonseca, Fernando Josepetti ; Quivy, Alain André

    Source: Sensors. Unidades: EP, IF

    Subjects: SEMICONDUTORES, FILMES FINOS, ESPECTROSCOPIA

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      IZQUIERDO, Jose Enrique Eirez et al. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure. Sensors, v. 23, n. 18, 2023Tradução . . Disponível em: https://doi.org/10.3390/s23187981. Acesso em: 08 nov. 2025.

    • APA

      Izquierdo, J. E. E., Cavallari, M. R., García, D. C., Fonseca, F. J., & Quivy, A. A. (2023). Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure. Sensors, 23( 18). doi:10.3390/s23187981

    • NLM

      Izquierdo JEE, Cavallari MR, García DC, Fonseca FJ, Quivy AA. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure [Internet]. Sensors. 2023 ; 23( 18):[citado 2025 nov. 08 ] Available from: https://doi.org/10.3390/s23187981

    • Vancouver

      Izquierdo JEE, Cavallari MR, García DC, Fonseca FJ, Quivy AA. Detection of water contaminants by organic transistors as gas sensors in a bottom-gate/bottom-contact cross-linked structure [Internet]. Sensors. 2023 ; 23( 18):[citado 2025 nov. 08 ] Available from: https://doi.org/10.3390/s23187981

  • Artigo de periodico

    Multifractal conductance fluctuations of helical edge states (2023)

    Olshanetsky, E. B.; Gusev, Gennady ; Levine, Alexandre ; Kvon, Z. D.; Armand, Johnnier Perez

    Source: Physical Review Letters. Unidade: IF

    Assunto: SEMICONDUTORES

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      OLSHANETSKY, E. B. et al. Multifractal conductance fluctuations of helical edge states. Physical Review Letters, v. 131, n. 7, p. 076301, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.131.076301. Acesso em: 08 nov. 2025.

    • APA

      Olshanetsky, E. B., Gusev, G., Levine, A., Kvon, Z. D., & Armand, J. P. (2023). Multifractal conductance fluctuations of helical edge states. Physical Review Letters, 131( 7), 076301. doi:10.1103/PhysRevLett.131.076301

    • NLM

      Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301

    • Vancouver

      Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301

  • Trabalho de evento

    On the importance of atom probe tomography for the development of new nanoscale devices (2022)

    Santos, Thales Borrely dos ; Huang, Tao-Yu; Yang, Yu-Chen; Goldman, Rachel S; Quivy, Alain André

    Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF

    Subjects: TOMOGRAFIA, SEMICONDUTORES

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      SANTOS, Thales Borrely dos et al. On the importance of atom probe tomography for the development of new nanoscale devices. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881039. Acesso em: 08 nov. 2025.

    • APA

      Santos, T. B. dos, Huang, T. -Y., Yang, Y. -C., Goldman, R. S., & Quivy, A. A. (2022). On the importance of atom probe tomography for the development of new nanoscale devices. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881039

    • NLM

      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2025 nov. 08 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039

    • Vancouver

      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2025 nov. 08 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039

  • Curadoria

    Brazilian Workshop on Semiconductor Physics - BWSP, 20 (2022)

    Miranda, Caetano Rodrigues ; Sipahi, Guilherme Matos (cur) ; Assali, Lucy Vitoria Credidio (cur) ; Silva, Luis Gregorio Godoy de Vasconcellos Dias da (cur)

    Unidades: IF, IFSC

    Subjects: SEMICONDUTORES, FÍSICA TEÓRICA

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    • ABNT

      MIRANDA, Caetano Rodrigues. Brazilian Workshop on Semiconductor Physics - BWSP, 20. . São José dos Campos: Instituto Tecnológico de Aeronáutica - ITA. . Acesso em: 08 nov. 2025. , 2022

    • APA

      Miranda, C. R. (2022). Brazilian Workshop on Semiconductor Physics - BWSP, 20. São José dos Campos: Instituto Tecnológico de Aeronáutica - ITA.

    • NLM

      Miranda CR. Brazilian Workshop on Semiconductor Physics - BWSP, 20. 2022 ;[citado 2025 nov. 08 ]

    • Vancouver

      Miranda CR. Brazilian Workshop on Semiconductor Physics - BWSP, 20. 2022 ;[citado 2025 nov. 08 ]

  • Artigo de periodico

    Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET (2022)

    Alberton, S. G. ; Aguiar, Vitor^Ângelo Paulino de ; Medina, Nilberto Heder ; Added, Nemitala ; Macchione, E L A ; Menegasso, R. ; Cesário, G. J.; Santos, Hellen Cristine ; Scarduelli, V B ; Alcántara-Núñez, J. A.; Guazzelli, M. A.; Santos, R. B. B.; Flechas, D.

    Source: Microelectronics Reliability. Unidade: IF

    Subjects: FÍSICA NUCLEAR, ÍONS PESADOS, SEMICONDUTORES

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      ALBERTON, S. G. et al. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, v. 137, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2022.114784. Acesso em: 08 nov. 2025.

    • APA

      Alberton, S. G., Aguiar, V. ^Â. P. de, Medina, N. H., Added, N., Macchione, E. L. A., Menegasso, R., et al. (2022). Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, 137. doi:10.1016/j.microrel.2022.114784

    • NLM

      Alberton SG, Aguiar V^ÂP de, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2025 nov. 08 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784

    • Vancouver

      Alberton SG, Aguiar V^ÂP de, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2025 nov. 08 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784

  • Artigo de periodico

    Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides (2022)

    Darriba, G N ; Muñoz, Emiliano L ; Richard, Diego ; Ayala, Alejandro Pedro ; Carbonari, A W ; Petrilli, Helena Maria ; Renteria, M

    Source: Physical Review B. Unidade: IF

    Assunto: SEMICONDUTORES

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    • ABNT

      DARRIBA, G N et al. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, v. 105, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.105.195201. Acesso em: 08 nov. 2025.

    • APA

      Darriba, G. N., Muñoz, E. L., Richard, D., Ayala, A. P., Carbonari, A. W., Petrilli, H. M., & Renteria, M. (2022). Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, 105. doi:10.1103/PhysRevB.105.195201

    • NLM

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201

    • Vancouver

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201

  • Artigo de periodico

    Excitonic effects in graphene-like C3N (2022)

    Bonacci, Miki ; Zanfrognini, Matteo ; Molinari, Elisa ; Ruini, Alice; Caldas, Marilia Junqueira ; Ferretti, Andrea ; Varsano, Daniele

    Source: Physical Review Materials. Unidade: IF

    Assunto: SEMICONDUTORES

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    • ABNT

      BONACCI, Miki et al. Excitonic effects in graphene-like C3N. Physical Review Materials, v. 6, n. 3, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.6.034009. Acesso em: 08 nov. 2025.

    • APA

      Bonacci, M., Zanfrognini, M., Molinari, E., Ruini, A., Caldas, M. J., Ferretti, A., & Varsano, D. (2022). Excitonic effects in graphene-like C3N. Physical Review Materials, 6( 3). doi:10.1103/PhysRevMaterials.6.034009

    • NLM

      Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas MJ, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009

    • Vancouver

      Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas MJ, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2025 nov. 08 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009

  • Relatorio tecnico

    Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors (2020)

    Silva, Antonio Jose Roque da ; Santos, Raimundo R. dos; Oliveira, Luiz E.; Fazzio, Adalberto

    Unidade: IF

    Subjects: SEMICONDUTORES, FERROMAGNETISMO

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    • ABNT

      SILVA, Antonio Jose Roque da et al. Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0505500.pdf. Acesso em: 08 nov. 2025. , 2020

    • APA

      Silva, A. J. R. da, Santos, R. R. dos, Oliveira, L. E., & Fazzio, A. (2020). Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0505500.pdf

    • NLM

      Silva AJR da, Santos RR dos, Oliveira LE, Fazzio A. Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors [Internet]. 2020 ;[citado 2025 nov. 08 ] Available from: https://arxiv.org/pdf/cond-mat/0505500.pdf

    • Vancouver

      Silva AJR da, Santos RR dos, Oliveira LE, Fazzio A. Disorder and the effective 'MN'-'MN' exchange interaction in 'GA' IND. 1−x' 'MN' IND. x''AS' diluted magnetic semiconductors [Internet]. 2020 ;[citado 2025 nov. 08 ] Available from: https://arxiv.org/pdf/cond-mat/0505500.pdf

  • Relatorio tecnico

    Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films (2020)

    Morelhão, Sérgio Luiz ; Kycia, Stefan; Netzke, Samuel; Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo

    Unidade: IF

    Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X

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    • ABNT

      MORELHÃO, Sérgio Luiz et al. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. . Melville: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/2007.15042.pdf. Acesso em: 08 nov. 2025. , 2020

    • APA

      Morelhão, S. L., Kycia, S., Netzke, S., Fornari, C. I., Rappl, P. H. O., & Abramof, E. (2020). Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Melville: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/2007.15042.pdf

    • NLM

      Morelhão SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. 2020 ;[citado 2025 nov. 08 ] Available from: https://arxiv.org/pdf/2007.15042.pdf

    • Vancouver

      Morelhão SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. 2020 ;[citado 2025 nov. 08 ] Available from: https://arxiv.org/pdf/2007.15042.pdf

  • Relatorio tecnico

    Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters (2020)

    Mamani, Rolando Larico; Assali, Lucy Vitoria Credidio ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco

    Unidades: IF, EP

    Assunto: SEMICONDUTORES

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    • ABNT

      MAMANI, Rolando Larico et al. Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/1307.2866.pdf. Acesso em: 08 nov. 2025. , 2020

    • APA

      Mamani, R. L., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2020). Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/1307.2866.pdf

    • NLM

      Mamani RL, Assali LVC, Machado WVM, Justo Filho JF. Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters [Internet]. 2020 ;[citado 2025 nov. 08 ] Available from: https://arxiv.org/pdf/1307.2866.pdf

    • Vancouver

      Mamani RL, Assali LVC, Machado WVM, Justo Filho JF. Cobalt-related impurity centers in diamond: electronic properties and hyperfine parameters [Internet]. 2020 ;[citado 2025 nov. 08 ] Available from: https://arxiv.org/pdf/1307.2866.pdf

  • Artigo de periodico

    Organic Dielectric Films for Flexible Transistors as Gas Sensors (2020)

    García, Dennis Cabrera; Eirez Izquierdo, José Enrique ; Cavallari, Marco Roberto ; Quivy, Alain André; Fonseca, Fernando Josepetti

    Source: Journal of Integrated Circuits and Systems. Unidades: IF, EP

    Subjects: ÓPTICA ELETRÔNICA, TRANSISTORES, POLÍMEROS (MATERIAIS), FILMES FINOS, CAPACITORES, DIELÉTRICOS, SEMICONDUTORES

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    • ABNT

      GARCÍA, Dennis Cabrera et al. Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, v. 15, n. 2, 2020Tradução . . Disponível em: https://doi.org/10.29292/jics.v15i2.170. Acesso em: 08 nov. 2025.

    • APA

      García, D. C., Eirez Izquierdo, J. E., Cavallari, M. R., Quivy, A. A., & Fonseca, F. J. (2020). Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, 15( 2). doi:10.29292/jics.v15i2.170

    • NLM

      García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2025 nov. 08 ] Available from: https://doi.org/10.29292/jics.v15i2.170

    • Vancouver

      García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2025 nov. 08 ] Available from: https://doi.org/10.29292/jics.v15i2.170

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