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Relatorio tecnico
Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films (2020)
Morelhão, Sergio Luiz ; Kycia, Stefan; Netzke, Samuel; Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo
Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
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ABNT
MORELHÃO, Sergio Luiz et al. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. . Melville: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/2007.15042.pdf. Acesso em: 12 set. 2024. , 2020
APA
Morelhão, S. L., Kycia, S., Netzke, S., Fornari, C. I., Rappl, P. H. O., & Abramof, E. (2020). Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Melville: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/2007.15042.pdf
NLM
Morelhão SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. 2020 ;[citado 2024 set. 12 ] Available from: https://arxiv.org/pdf/2007.15042.pdf
Vancouver
Morelhão SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. 2020 ;[citado 2024 set. 12 ] Available from: https://arxiv.org/pdf/2007.15042.pdf
Artigo de periodico
Novel near field detector for three-dimensional X-ray diffraction microscopy (2018)
Annett, Scott; Kycia, Stefan; Dale, Darren; Morelhao, Sergio Luiz
Source: MRS Advances. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
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ABNT
ANNETT, Scott et al. Novel near field detector for three-dimensional X-ray diffraction microscopy. MRS Advances, v. 3, n. ju 2018, p. 2341-2346, 2018Tradução . . Disponível em: https://doi.org/10.1557/adv.2018.487. Acesso em: 12 set. 2024.
APA
Annett, S., Kycia, S., Dale, D., & Morelhao, S. L. (2018). Novel near field detector for three-dimensional X-ray diffraction microscopy. MRS Advances, 3( ju 2018), 2341-2346. doi:10.1557/adv.2018.487
NLM
Annett S, Kycia S, Dale D, Morelhao SL. Novel near field detector for three-dimensional X-ray diffraction microscopy [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2341-2346.[citado 2024 set. 12 ] Available from: https://doi.org/10.1557/adv.2018.487
Vancouver
Annett S, Kycia S, Dale D, Morelhao SL. Novel near field detector for three-dimensional X-ray diffraction microscopy [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2341-2346.[citado 2024 set. 12 ] Available from: https://doi.org/10.1557/adv.2018.487
Artigo de periodico
Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films (2018)
Fornari, C. I; Rappl, P. H. O.; Fornari, G.; Travelho, J. S.; Castro, S. de; Pirralho, M. J. P.; Pena, F. S.; Peres, M. L.; Abramof, E.; Morelhao, Sergio Luiz
Source: Materials Research Express. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
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ABNT
FORNARI, C. I et al. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films. Materials Research Express, v. no 2018, n. 11, p. 116410, 2018Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/2053-1591/aadeb7. Acesso em: 12 set. 2024.
APA
Fornari, C. I., Rappl, P. H. O., Fornari, G., Travelho, J. S., Castro, S. de, Pirralho, M. J. P., et al. (2018). Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films. Materials Research Express, no 2018( 11), 116410. doi:10.1088/2053-1591/aadeb7
NLM
Fornari CI, Rappl PHO, Fornari G, Travelho JS, Castro S de, Pirralho MJP, Pena FS, Peres ML, Abramof E, Morelhao SL. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films [Internet]. Materials Research Express. 2018 ; no 2018( 11): 116410.[citado 2024 set. 12 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/aadeb7
Vancouver
Fornari CI, Rappl PHO, Fornari G, Travelho JS, Castro S de, Pirralho MJP, Pena FS, Peres ML, Abramof E, Morelhao SL. Structural defects and electronic phase diagram of topological insulator bismuth telluride epitaxial films [Internet]. Materials Research Express. 2018 ; no 2018( 11): 116410.[citado 2024 set. 12 ] Available from: http://iopscience.iop.org/article/10.1088/2053-1591/aadeb7
Relatorio tecnico
X-ray tools for van der waals epitaxy of bismuth telluride topological insulator films (2018)
Kycia, Stefan; Netzke, Samuel; Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo; Morelhao, Sergio Luiz
Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
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ABNT
KYCIA, Stefan et al. X-ray tools for van der waals epitaxy of bismuth telluride topological insulator films. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/abs/1812.10804. Acesso em: 12 set. 2024. , 2018
APA
Kycia, S., Netzke, S., Fornari, C. I., Rappl, P. H. O., Abramof, E., & Morelhao, S. L. (2018). X-ray tools for van der waals epitaxy of bismuth telluride topological insulator films. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/abs/1812.10804
NLM
Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E, Morelhao SL. X-ray tools for van der waals epitaxy of bismuth telluride topological insulator films [Internet]. 2018 ;[citado 2024 set. 12 ] Available from: https://arxiv.org/abs/1812.10804
Vancouver
Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E, Morelhao SL. X-ray tools for van der waals epitaxy of bismuth telluride topological insulator films [Internet]. 2018 ;[citado 2024 set. 12 ] Available from: https://arxiv.org/abs/1812.10804
Artigo de periodico
Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction (2018)
Dina, Gabriel; Kycia, Stefan; Gonzalez, Anal Gomez; Morelhao, Sergio Luiz
Source: MRS Advances. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
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ABNT
DINA, Gabriel et al. Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction. MRS Advances, v. 3, n. ju 2018, p. 2347-2352, 2018Tradução . . Disponível em: https://doi.org/10.1557/adv.2018.511. Acesso em: 12 set. 2024.
APA
Dina, G., Kycia, S., Gonzalez, A. G., & Morelhao, S. L. (2018). Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction. MRS Advances, 3( ju 2018), 2347-2352. doi:10.1557/adv.2018.511
NLM
Dina G, Kycia S, Gonzalez AG, Morelhao SL. Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2347-2352.[citado 2024 set. 12 ] Available from: https://doi.org/10.1557/adv.2018.511
Vancouver
Dina G, Kycia S, Gonzalez AG, Morelhao SL. Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2347-2352.[citado 2024 set. 12 ] Available from: https://doi.org/10.1557/adv.2018.511
Artigo de periodico
Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films (2018)
Morelhao, Sergio Luiz; Kycia, Stefan; Netzke, Samuel; Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo
Source: Applied Physics Letters. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
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ABNT
MORELHAO, Sergio Luiz et al. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Applied Physics Letters, v. 112, n. 12, p. 101903, 2018Tradução . . Disponível em: https://aip.scitation.org/doi/10.1063/1.5020375. Acesso em: 12 set. 2024.
APA
Morelhao, S. L., Kycia, S., Netzke, S., Fornari, C. I., Rappl, P. H. O., & Abramof, E. (2018). Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Applied Physics Letters, 112( 12), 101903. doi:10.1063/1.5020375
NLM
Morelhao SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. Applied Physics Letters. 2018 ; 112( 12): 101903.[citado 2024 set. 12 ] Available from: https://aip.scitation.org/doi/10.1063/1.5020375
Vancouver
Morelhao SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. Applied Physics Letters. 2018 ; 112( 12): 101903.[citado 2024 set. 12 ] Available from: https://aip.scitation.org/doi/10.1063/1.5020375
Artigo de periodico
Structure of PbTe(`SiO IND.2´)/`SiO IND.2´ multilayers deposited on Si(111) (2010)
Kellermann, Guinther; Rodriguez, Eugenio; Jimenez, Ernesto; Cesar, Carlos Lenz; Barbosa, Luiz Carlos; Craievich, Aldo Felix
Source: Journal of Applied Crystallography. Unidade: IF
Subjects: FILMES FINOS, DIFRAÇÃO POR RAIOS X, SEMICONDUTORES
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ABNT
KELLERMANN, Guinther et al. Structure of PbTe(`SiO IND.2´)/`SiO IND.2´ multilayers deposited on Si(111). Journal of Applied Crystallography, v. 43, p. 385-393, 2010Tradução . . Disponível em: http://onlinelibrary.wiley.com/doi/10.1107/S0021889810005625/pdf. Acesso em: 12 set. 2024.
APA
Kellermann, G., Rodriguez, E., Jimenez, E., Cesar, C. L., Barbosa, L. C., & Craievich, A. F. (2010). Structure of PbTe(`SiO IND.2´)/`SiO IND.2´ multilayers deposited on Si(111). Journal of Applied Crystallography, 43, 385-393. Recuperado de http://onlinelibrary.wiley.com/doi/10.1107/S0021889810005625/pdf
NLM
Kellermann G, Rodriguez E, Jimenez E, Cesar CL, Barbosa LC, Craievich AF. Structure of PbTe(`SiO IND.2´)/`SiO IND.2´ multilayers deposited on Si(111) [Internet]. Journal of Applied Crystallography. 2010 ; 43 385-393.[citado 2024 set. 12 ] Available from: http://onlinelibrary.wiley.com/doi/10.1107/S0021889810005625/pdf
Vancouver
Kellermann G, Rodriguez E, Jimenez E, Cesar CL, Barbosa LC, Craievich AF. Structure of PbTe(`SiO IND.2´)/`SiO IND.2´ multilayers deposited on Si(111) [Internet]. Journal of Applied Crystallography. 2010 ; 43 385-393.[citado 2024 set. 12 ] Available from: http://onlinelibrary.wiley.com/doi/10.1107/S0021889810005625/pdf
Trabalho de evento-anais periodico
Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers (2009)
Diaz, B; Abramof, E; Rappl, P H O; Granado, E; Chitta, Valmir Antonio; Henriques, André Bohomoletz; Oliveira Jr., N. F.
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
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ABNT
DIAZ, B et al. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific. . Acesso em: 12 set. 2024. , 2009
APA
Diaz, B., Abramof, E., Rappl, P. H. O., Granado, E., Chitta, V. A., Henriques, A. B., & Oliveira Jr., N. F. (2009). Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific.
NLM
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 set. 12 ]
Vancouver
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 set. 12 ]
Artigo de periodico
Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction (2009)
Freitas, Raul de Oliveira; Quivy, A. A.; Morelhão, Sérgio Luiz
Source: Journal of Applied Physics,. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X
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ABNT
FREITAS, Raul de Oliveira e QUIVY, A. A. e MORELHÃO, Sérgio Luiz. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics, v. 105, n. 3, p. 036104-1/-03104/3, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3074376. Acesso em: 12 set. 2024.
APA
Freitas, R. de O., Quivy, A. A., & Morelhão, S. L. (2009). Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics,, 105( 3), 036104-1/-03104/3. doi:10.1063/1.3074376
NLM
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.3074376
Vancouver
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.3074376
Trabalho de evento-anais periodico
In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat (2007)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Marques, E B
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, EPITAXIA POR FEIXE MOLECULAR
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ABNT
MARTINI, S et al. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal. Acesso em: 12 set. 2024. , 2007
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Marques, E. B. (2007). In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
NLM
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 set. 12 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Vancouver
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 set. 12 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Artigo de periodico
Magnetic properties of the 'Mn IND. 1-x''Fe IND. x''In IND. 2''S IND. 4' spinel compounds (2004)
Sagredo, V; Pineda, F; Haar, Ewout Ter
Source: Journal of Alloys and Compounds. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
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ABNT
SAGREDO, V e PINEDA, F e HAAR, Ewout Ter. Magnetic properties of the 'Mn IND. 1-x''Fe IND. x''In IND. 2''S IND. 4' spinel compounds. Journal of Alloys and Compounds, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TWY-4B857KH-4-T&_cdi=5575&_orig=browse&_coverDate=04%2F28%2F2004&_sk=996309998&view=c&wchp=dGLbVtz-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=0fa8a5f0105cd619de41f888028ef217&ie=f.pdf. Acesso em: 12 set. 2024.
APA
Sagredo, V., Pineda, F., & Haar, E. T. (2004). Magnetic properties of the 'Mn IND. 1-x''Fe IND. x''In IND. 2''S IND. 4' spinel compounds. Journal of Alloys and Compounds. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TWY-4B857KH-4-T&_cdi=5575&_orig=browse&_coverDate=04%2F28%2F2004&_sk=996309998&view=c&wchp=dGLbVtz-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=0fa8a5f0105cd619de41f888028ef217&ie=f.pdf
NLM
Sagredo V, Pineda F, Haar ET. Magnetic properties of the 'Mn IND. 1-x''Fe IND. x''In IND. 2''S IND. 4' spinel compounds [Internet]. Journal of Alloys and Compounds. 2004 ;[citado 2024 set. 12 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TWY-4B857KH-4-T&_cdi=5575&_orig=browse&_coverDate=04%2F28%2F2004&_sk=996309998&view=c&wchp=dGLbVtz-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=0fa8a5f0105cd619de41f888028ef217&ie=f.pdf
Vancouver
Sagredo V, Pineda F, Haar ET. Magnetic properties of the 'Mn IND. 1-x''Fe IND. x''In IND. 2''S IND. 4' spinel compounds [Internet]. Journal of Alloys and Compounds. 2004 ;[citado 2024 set. 12 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TWY-4B857KH-4-T&_cdi=5575&_orig=browse&_coverDate=04%2F28%2F2004&_sk=996309998&view=c&wchp=dGLbVtz-zSkWb&_acct=C000049650&_version=1&_userid=972067&md5=0fa8a5f0105cd619de41f888028ef217&ie=f.pdf
Trabalho de evento-resumo
Local and nanoscopic structure of sodium-doped siloxane-PPO transparent ionic conductors (2003)
Chaker, J A; Briois, V; Dahmouche, K; Santilli, C V; Pulcinelli, S H; Judeinstein, P; Flank, A M; Craievich, Aldo Felix
Source: Abstracts. Conference titles: Annual Meeting on the International Commission on Glass. Unidade: IF
Subjects: VIDRO, SEMICONDUTORES, ESPECTROSCOPIA DE RAIO X, DIFRAÇÃO POR RAIOS X
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ABNT
CHAKER, J A et al. Local and nanoscopic structure of sodium-doped siloxane-PPO transparent ionic conductors. 2003, Anais.. São Paulo: ABIVIDRO, 2003. . Acesso em: 12 set. 2024.
APA
Chaker, J. A., Briois, V., Dahmouche, K., Santilli, C. V., Pulcinelli, S. H., Judeinstein, P., et al. (2003). Local and nanoscopic structure of sodium-doped siloxane-PPO transparent ionic conductors. In Abstracts. São Paulo: ABIVIDRO.
NLM
Chaker JA, Briois V, Dahmouche K, Santilli CV, Pulcinelli SH, Judeinstein P, Flank AM, Craievich AF. Local and nanoscopic structure of sodium-doped siloxane-PPO transparent ionic conductors. Abstracts. 2003 ;[citado 2024 set. 12 ]
Vancouver
Chaker JA, Briois V, Dahmouche K, Santilli CV, Pulcinelli SH, Judeinstein P, Flank AM, Craievich AF. Local and nanoscopic structure of sodium-doped siloxane-PPO transparent ionic conductors. Abstracts. 2003 ;[citado 2024 set. 12 ]
Trabalho de evento-resumo
Estudo da evolução estrutural em semicondutores 'Zn IND. 1-x''Mn IND.x''In IND. 2''Se IND. 4', por técnicas dee difração de raios x (2003)
Ochoa, J C Mantilla; Brito, Giancarlo Esposito de Souza; Haar, Ewout Ter; Bindilatti, V.
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada 26. Unidade: IF
Subjects: PROPRIEDADES DOS MATERIAIS, ESTRUTURA DOS MATERIAIS, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
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ABNT
OCHOA, J C Mantilla et al. Estudo da evolução estrutural em semicondutores 'Zn IND. 1-x''Mn IND.x''In IND. 2''Se IND. 4', por técnicas dee difração de raios x. 2003, Anais.. São Paulo: SBF, 2003. . Acesso em: 12 set. 2024.
APA
Ochoa, J. C. M., Brito, G. E. de S., Haar, E. T., & Bindilatti, V. (2003). Estudo da evolução estrutural em semicondutores 'Zn IND. 1-x''Mn IND.x''In IND. 2''Se IND. 4', por técnicas dee difração de raios x. In Resumos. São Paulo: SBF.
NLM
Ochoa JCM, Brito GE de S, Haar ET, Bindilatti V. Estudo da evolução estrutural em semicondutores 'Zn IND. 1-x''Mn IND.x''In IND. 2''Se IND. 4', por técnicas dee difração de raios x. Resumos. 2003 ;[citado 2024 set. 12 ]
Vancouver
Ochoa JCM, Brito GE de S, Haar ET, Bindilatti V. Estudo da evolução estrutural em semicondutores 'Zn IND. 1-x''Mn IND.x''In IND. 2''Se IND. 4', por técnicas dee difração de raios x. Resumos. 2003 ;[citado 2024 set. 12 ]
Artigo de periodico
Strength tuning of multiple waves in crystals (2001)
Morelhão, Sérgio Luiz; Avanci, L H
Source: Acta Crystallographica Section A. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, ÓPTICA ELETRÔNICA
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ABNT
MORELHÃO, Sérgio Luiz e AVANCI, L H. Strength tuning of multiple waves in crystals. Acta Crystallographica Section A, v. 57, p. 192-196, 2001Tradução . . Disponível em: https://doi.org/10.1107/s0108767300015774. Acesso em: 12 set. 2024.
APA
Morelhão, S. L., & Avanci, L. H. (2001). Strength tuning of multiple waves in crystals. Acta Crystallographica Section A, 57, 192-196. doi:10.1107/s0108767300015774
NLM
Morelhão SL, Avanci LH. Strength tuning of multiple waves in crystals [Internet]. Acta Crystallographica Section A. 2001 ; 57 192-196.[citado 2024 set. 12 ] Available from: https://doi.org/10.1107/s0108767300015774
Vancouver
Morelhão SL, Avanci LH. Strength tuning of multiple waves in crystals [Internet]. Acta Crystallographica Section A. 2001 ; 57 192-196.[citado 2024 set. 12 ] Available from: https://doi.org/10.1107/s0108767300015774
Artigo de periodico
Strong luminescence from Tamm states in modulation-doped superlattices (2001)
Henriques, André Bohomoletz
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, ÓPTICA ELETRÔNICA
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ABNT
HENRIQUES, André Bohomoletz. Strong luminescence from Tamm states in modulation-doped superlattices. Applied Physics Letters, v. 78, n. 6, p. 691-693, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1346627. Acesso em: 12 set. 2024.
APA
Henriques, A. B. (2001). Strong luminescence from Tamm states in modulation-doped superlattices. Applied Physics Letters, 78( 6), 691-693. doi:10.1063/1.1346627
NLM
Henriques AB. Strong luminescence from Tamm states in modulation-doped superlattices [Internet]. Applied Physics Letters. 2001 ; 78( 6): 691-693.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.1346627
Vancouver
Henriques AB. Strong luminescence from Tamm states in modulation-doped superlattices [Internet]. Applied Physics Letters. 2001 ; 78( 6): 691-693.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.1346627
Trabalho de evento
X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling (1992)
Fantini, Márcia Carvalho de Abreu ; SANTOS, P. V.; Pereyra, Inés ; Páez Carreño, Marcelo Nelson
Conference titles: Brazilian School on Semiconductor Physics. Unidades: IF, EP
Subjects: FÍSICO-QUÍMICA, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling. 1992, Anais.. Cingapura: Instituto de Física, Universidade de São Paulo, 1992. . Acesso em: 12 set. 2024.
APA
Fantini, M. C. de A., SANTOS, P. V., Pereyra, I., & Páez Carreño, M. N. (1992). X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling. In . Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Fantini MC de A, SANTOS PV, Pereyra I, Páez Carreño MN. X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling. 1992 ;[citado 2024 set. 12 ]
Vancouver
Fantini MC de A, SANTOS PV, Pereyra I, Páez Carreño MN. X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling. 1992 ;[citado 2024 set. 12 ]

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