ReP USP - Resultado da busca

Trabalho de evento
Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs (2000)
Pavanello, Marcelo Antonio ; Nicolett, Aparecido Sirley; Martino, João Antonio
Source: LATW 00: proceedings. Conference titles: IEEE Latin American Test Workshop. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
PAVANELLO, Marcelo Antonio e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. 2000, Anais.. Piscataway: IEEE/SBC, 2000. . Acesso em: 11 nov. 2024.
APA
Pavanello, M. A., Nicolett, A. S., & Martino, J. A. (2000). Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. In LATW 00: proceedings. Piscataway: IEEE/SBC.
NLM
Pavanello MA, Nicolett AS, Martino JA. Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2024 nov. 11 ]
Vancouver
Pavanello MA, Nicolett AS, Martino JA. Effective channel length and series resistence extraction error induced by the substrate in enhancement-mode SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2024 nov. 11 ]
Artigo de periodico
An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Dessard, Vincent; Flandre, Denis
Source: Electrochemical and Solid-State Letters. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics. Electrochemical and Solid-State Letters, v. 3, n. Ja 2000, p. 50-52, 2000Tradução . . Disponível em: https://doi.org/10.1149/1.1390955. Acesso em: 11 nov. 2024.
APA
Pavanello, M. A., Martino, J. A., Dessard, V., & Flandre, D. (2000). An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics. Electrochemical and Solid-State Letters, 3( Ja 2000), 50-52. doi:10.1149/1.1390955
NLM
Pavanello MA, Martino JA, Dessard V, Flandre D. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics [Internet]. Electrochemical and Solid-State Letters. 2000 ; 3( Ja 2000): 50-52.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1149/1.1390955
Vancouver
Pavanello MA, Martino JA, Dessard V, Flandre D. An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics [Internet]. Electrochemical and Solid-State Letters. 2000 ; 3( Ja 2000): 50-52.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1149/1.1390955
Trabalho de evento
Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: Proceedings. Conference titles: IEEE International Conference on Devices, Circuits and Syems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. 2000, Anais.. Piscataway: IEEE, 2000. . Acesso em: 11 nov. 2024.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. In Proceedings. Piscataway: IEEE.
NLM
Pavanello MA, Martino JA, Flandre D. Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. Proceedings. 2000 ;[citado 2024 nov. 11 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Comparison of floating-body effects in conventional and graded-channel fully-depleted silicon-on-insulator nMOSFETs. Proceedings. 2000 ;[citado 2024 nov. 11 ]
Trabalho de evento
A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: LATW 00: proceedings. Conference titles: IEEE Latin American Test Workshop. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. 2000, Anais.. Piscataway: IEEE/SBC, 2000. . Acesso em: 11 nov. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. In LATW 00: proceedings. Piscataway: IEEE/SBC.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2024 nov. 11 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2024 nov. 11 ]
Trabalho de evento
Determination of silicon film thickness in SOI capacitors (2000)
Sonnenberg, Victor ; Martino, João Antonio
Source: LATW 00: proceedings. Conference titles: IEEE Latin American Test Workshop. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of silicon film thickness in SOI capacitors. 2000, Anais.. Piscataway: IEEE/SBC, 2000. . Acesso em: 11 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2000). Determination of silicon film thickness in SOI capacitors. In LATW 00: proceedings. Piscataway: IEEE/SBC.
NLM
Sonnenberg V, Martino JA. Determination of silicon film thickness in SOI capacitors. LATW 00: proceedings. 2000 ;[citado 2024 nov. 11 ]
Vancouver
Sonnenberg V, Martino JA. Determination of silicon film thickness in SOI capacitors. LATW 00: proceedings. 2000 ;[citado 2024 nov. 11 ]
Trabalho de evento
Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C (2000)
Bellodi, Marcello; Martino, João Antonio
Source: LATW 00: proceedings. Conference titles: IEEE Latin American Test Workshop. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C. 2000, Anais.. Piscataway: IEEE/SBC, 2000. . Acesso em: 11 nov. 2024.
APA
Bellodi, M., & Martino, J. A. (2000). Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C. In LATW 00: proceedings. Piscataway: IEEE/SBC.
NLM
Bellodi M, Martino JA. Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C. LATW 00: proceedings. 2000 ;[citado 2024 nov. 11 ]
Vancouver
Bellodi M, Martino JA. Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C. LATW 00: proceedings. 2000 ;[citado 2024 nov. 11 ]
Trabalho de evento
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Proceedings. Conference titles: IEEE International Conference on Devices, Circuits and Syems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. 2000, Anais.. Piscataway: IEEE, 2000. . Acesso em: 11 nov. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. In Proceedings. Piscataway: IEEE.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. Proceedings. 2000 ;[citado 2024 nov. 11 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. Proceedings. 2000 ;[citado 2024 nov. 11 ]

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