Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C (2000)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP
- Unidades: EP
- Subjects: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: IEEE/SBC
- Place of publication: Piscataway
- Date published: 2000
- Source:
- Título do periódico: LATW 00: proceedings
- Conference title: IEEE Latin American Test Workshop
-
ABNT
BELLODI, Marcello; MARTINO, João Antonio. Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C. Anais.. Piscataway: IEEE/SBC, 2000. -
APA
Bellodi, M., & Martino, J. A. (2000). Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C. In LATW 00: proceedings. Piscataway: IEEE/SBC. -
NLM
Bellodi M, Martino JA. Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C. LATW 00: proceedings. 2000 ; -
Vancouver
Bellodi M, Martino JA. Analysis of the leakage drain current accumulation-mode SOI pMOSFETs operating up to 300º C. LATW 00: proceedings. 2000 ; - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
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- Understanding and optimizing the floating body retention in FDSOI UTBOX
- Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities
- Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
- Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence
- Sistema endereçável de detecção e controle. (também em CD-Rom)
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
- A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
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