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Artigo de periodico
Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)
Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES
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ABNT
SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 12 jul. 2024.
APA
Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
NLM
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0187962
Vancouver
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0187962
Artigo de periodico
Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications (2023)
Paula, Kelly Tasso de ; Santos, Sabrina Nicoleti Carvalho dos ; Facure, Murilo Henrique Moreira ; Araújo, Francineide Lopes de ; Andrade, Marcelo Barbosa de ; Corrêa, Daniel Souza ; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: LASER, NANOPARTÍCULAS, SEMICONDUTORES, FILMES FINOS, ÓPTICA ELETRÔNICA
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PAULA, Kelly Tasso de et al. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, v. 133, n. 5, p. 053103-1-053103-10, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0137926. Acesso em: 12 jul. 2024.
APA
Paula, K. T. de, Santos, S. N. C. dos, Facure, M. H. M., Araújo, F. L. de, Andrade, M. B. de, Corrêa, D. S., & Mendonça, C. R. (2023). Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, 133( 5), 053103-1-053103-10. doi:10.1063/5.0137926
NLM
Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0137926
Vancouver
Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0137926
Artigo de periodico
Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications (2023)
Materon, Elsa Maria ; Filgueiras, Hugo Rodrigues Dias ; Vilas Boas, Evandro Cesar ; Gómez, Faustino Reyes ; Cavalcanti, Francisco Rodrigo Porto ; Silva, Yuri Carvalho Barbosa ; Sodre Junior, Arismar Cerqueira ; Figueiredo, Felipe Augusto Pereira de ; Mendes, Luciano Leonel ; Oliveira Junior, Osvaldo Novais de ; Mejía-Salazar, Jorge Ricardo
Source: Journal of Applied Physics. Unidades: IFSC, IQSC
Subjects: TELECOMUNICAÇÕES, INTERNET, FILMES FINOS
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MATERON, Elsa Maria et al. Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications. Journal of Applied Physics, v. 134, n. 14, p. 145304-1-145304-9, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0167167. Acesso em: 12 jul. 2024.
APA
Materon, E. M., Filgueiras, H. R. D., Vilas Boas, E. C., Gómez, F. R., Cavalcanti, F. R. P., Silva, Y. C. B., et al. (2023). Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications. Journal of Applied Physics, 134( 14), 145304-1-145304-9. doi:10.1063/5.0167167
NLM
Materon EM, Filgueiras HRD, Vilas Boas EC, Gómez FR, Cavalcanti FRP, Silva YCB, Sodre Junior AC, Figueiredo FAP de, Mendes LL, Oliveira Junior ON de, Mejía-Salazar JR. Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications [Internet]. Journal of Applied Physics. 2023 ; 134( 14): 145304-1-145304-9.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0167167
Vancouver
Materon EM, Filgueiras HRD, Vilas Boas EC, Gómez FR, Cavalcanti FRP, Silva YCB, Sodre Junior AC, Figueiredo FAP de, Mendes LL, Oliveira Junior ON de, Mejía-Salazar JR. Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications [Internet]. Journal of Applied Physics. 2023 ; 134( 14): 145304-1-145304-9.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0167167
Artigo de periodico
Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique (2022)
Savi, Elton de Lima ; Muniz, Robson F. ; Silva Junior, Adriano Aparecido da ; Schiavon, Gilson Junior ; Berrar, Jhonatan ; Estrada, Flávia Regina ; Schio, Pedro ; Cezar, Julio Criginski ; Rohling, Jurandir Hillmann ; Zanuto, Vitor S. ; Bento, A. C. ; Medina, Antonio ; Nunes, Luiz Antônio de Oliveira ; Baesso, Mauro Luciano
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, CÉLULAS SOLARES, FILMES FINOS, ÓPTICA NÃO LINEAR
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ABNT
SAVI, Elton de Lima et al. Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique. Journal of Applied Physics, v. 131, n. 5, p. 055304-1-055304-8, 2022Tradução . . Disponível em: https://doi.org/10.1063/5.0067794. Acesso em: 12 jul. 2024.
APA
Savi, E. de L., Muniz, R. F., Silva Junior, A. A. da, Schiavon, G. J., Berrar, J., Estrada, F. R., et al. (2022). Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique. Journal of Applied Physics, 131( 5), 055304-1-055304-8. doi:10.1063/5.0067794
NLM
Savi E de L, Muniz RF, Silva Junior AA da, Schiavon GJ, Berrar J, Estrada FR, Schio P, Cezar JC, Rohling JH, Zanuto VS, Bento AC, Medina A, Nunes LA de O, Baesso ML. Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique [Internet]. Journal of Applied Physics. 2022 ; 131( 5): 055304-1-055304-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0067794
Vancouver
Savi E de L, Muniz RF, Silva Junior AA da, Schiavon GJ, Berrar J, Estrada FR, Schio P, Cezar JC, Rohling JH, Zanuto VS, Bento AC, Medina A, Nunes LA de O, Baesso ML. Thin-film of Nd3+-Yb3+ co-doped low silica calcium aluminosilicate glass grown by a laser deposition technique [Internet]. Journal of Applied Physics. 2022 ; 131( 5): 055304-1-055304-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0067794
Artigo de periodico
Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses (2020)
Santos, Jéssica Fabiana Mariano dos ; Zanuto, Vitor Santaella ; Kesavulu, C. R. ; Venkataia, G ; Jayasankar, C. K. ; Nunes, Luiz Antônio de Oliveira ; Catunda, Tomaz
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE
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ABNT
SANTOS, Jéssica Fabiana Mariano dos et al. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses. Journal of Applied Physics, v. 128, n. 11, p. 113103-1-113103-8, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0020655. Acesso em: 12 jul. 2024.
APA
Santos, J. F. M. dos, Zanuto, V. S., Kesavulu, C. R., Venkataia, G., Jayasankar, C. K., Nunes, L. A. de O., & Catunda, T. (2020). Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses. Journal of Applied Physics, 128( 11), 113103-1-113103-8. doi:10.1063/5.0020655
NLM
Santos JFM dos, Zanuto VS, Kesavulu CR, Venkataia G, Jayasankar CK, Nunes LA de O, Catunda T. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses [Internet]. Journal of Applied Physics. 2020 ; 128( 11): 113103-1-113103-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0020655
Vancouver
Santos JFM dos, Zanuto VS, Kesavulu CR, Venkataia G, Jayasankar CK, Nunes LA de O, Catunda T. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses [Internet]. Journal of Applied Physics. 2020 ; 128( 11): 113103-1-113103-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/5.0020655
Artigo de periodico
Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)
Patricio, M. A. Tito; LaPierre, R. R.; Pusep, Yuri A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 12 jul. 2024.
APA
Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
NLM
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5085493
Vancouver
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5085493
Artigo de periodico
Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics (2019)
Ochoa, Diego A.; Casals, Jorge A.; Venet, Michel; M'Peko, Jean Claude; García, Jose E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE
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ABNT
OCHOA, Diego A. et al. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, v. 125, n. Ja 2019, p. 024101-1-024101-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5067243. Acesso em: 12 jul. 2024.
APA
Ochoa, D. A., Casals, J. A., Venet, M., M'Peko, J. C., & García, J. E. (2019). Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, 125( Ja 2019), 024101-1-024101-8. doi:10.1063/1.5067243
NLM
Ochoa DA, Casals JA, Venet M, M'Peko JC, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5067243
Vancouver
Ochoa DA, Casals JA, Venet M, M'Peko JC, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5067243
Artigo de periodico
Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications (2019)
Santa-Rosa, Washington; Silva Jr., Paulo Sergio da; M'Peko, Jean Claude; Amorín, Harvey; Algueró, Miguel; Venet, Michel
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE
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ABNT
SANTA-ROSA, Washington et al. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, v. 125, n. 7, p. 075107-1-075107-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5063320. Acesso em: 12 jul. 2024.
APA
Santa-Rosa, W., Silva Jr., P. S. da, M'Peko, J. C., Amorín, H., Algueró, M., & Venet, M. (2019). Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, 125( 7), 075107-1-075107-8. doi:10.1063/1.5063320
NLM
Santa-Rosa W, Silva Jr. PS da, M'Peko JC, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5063320
Vancouver
Santa-Rosa W, Silva Jr. PS da, M'Peko JC, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5063320
Artigo de periodico
A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory (2018)
Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme Matos; Silva, Juarez Lopes Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IQSC
Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS
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ABNT
BASTOS, Carlos M. O. et al. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, v. 123, n. 6, p. 065702-1-065702-13, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018325. Acesso em: 12 jul. 2024.
APA
Bastos, C. M. O., Sabino, F. P., Sipahi, G. M., & Silva, J. L. F. da. (2018). A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, 123( 6), 065702-1-065702-13. doi:10.1063/1.5018325
NLM
Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5018325
Vancouver
Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5018325
Artigo de periodico
Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 (2018)
Sabino, Fernando P.; Oliveira, Luiz Nunes de; Wei, Su-Huai; Silva, Juarez Lopes Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IQSC
Subjects: ÓPTICA, FÍSICA TEÓRICA
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ABNT
SABINO, Fernando P. et al. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, v. 123, n. 5, p. 055704-1-055704-9, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018056. Acesso em: 12 jul. 2024.
APA
Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2018). Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, 123( 5), 055704-1-055704-9. doi:10.1063/1.5018056
NLM
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5018056
Vancouver
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5018056
Artigo de periodico
Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer (2018)
Brenes-Badilla, D.; Coutinho, D. J.; Amorim, D. R. B.; Faria, Roberto Mendonça; Salvadori, Maria Cecília Barbosa da Silveira
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: POLÍMEROS (MATERIAIS), FILMES FINOS, CÉLULAS SOLARES
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ABNT
BRENES-BADILLA, D. et al. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, v. 123, n. 15, p. 155502-1-155502-7, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5017672. Acesso em: 12 jul. 2024.
APA
Brenes-Badilla, D., Coutinho, D. J., Amorim, D. R. B., Faria, R. M., & Salvadori, M. C. B. da S. (2018). Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, 123( 15), 155502-1-155502-7. doi:10.1063/1.5017672
NLM
Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5017672
Vancouver
Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5017672
Artigo de periodico
Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption (2018)
Martins, R. J.; Siqueira, J. P.; Clavero, I. Manglano; Margenfeld, C.; Fündling, S.; Vogt, A.; Waag, A.; Voss, T.; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS
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ABNT
MARTINS, R. J. et al. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, v. 123, n. 24, p. 243101-1-243101-5, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027395. Acesso em: 12 jul. 2024.
APA
Martins, R. J., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., Vogt, A., et al. (2018). Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, 123( 24), 243101-1-243101-5. doi:10.1063/1.5027395
NLM
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5027395
Vancouver
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5027395
Artigo de periodico
Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier (2018)
Stringasci, Mirian Denise; Salvio, Ana Gabriela; Sbrissa Neto, David; Vollet-Filho, José Dirceu; Bagnato, Vanderlei Salvador; Kurachi, Cristina
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NEOPLASIAS (TRATAMENTO), CARCINOMA BASOCELULAR
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ABNT
STRINGASCI, Mirian Denise et al. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier. Journal of Applied Physics, v. 124, n. 4, p. 044701-1-044701-8, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5036640. Acesso em: 12 jul. 2024.
APA
Stringasci, M. D., Salvio, A. G., Sbrissa Neto, D., Vollet-Filho, J. D., Bagnato, V. S., & Kurachi, C. (2018). Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier. Journal of Applied Physics, 124( 4), 044701-1-044701-8. doi:10.1063/1.5036640
NLM
Stringasci MD, Salvio AG, Sbrissa Neto D, Vollet-Filho JD, Bagnato VS, Kurachi C. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier [Internet]. Journal of Applied Physics. 2018 ; 124( 4): 044701-1-044701-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5036640
Vancouver
Stringasci MD, Salvio AG, Sbrissa Neto D, Vollet-Filho JD, Bagnato VS, Kurachi C. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier [Internet]. Journal of Applied Physics. 2018 ; 124( 4): 044701-1-044701-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.5036640
Artigo de periodico
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
Tito, M. A.; Pusep, Yuri A.; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 12 jul. 2024.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4942854
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4942854
Artigo de periodico
Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers (2016)
Tavares, B. G. M.; Tito, M. A.; Pusep, Yuri A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 12 jul. 2024.
APA
Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
NLM
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4954161
Vancouver
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4954161
Artigo de periodico
An alternative experimental approach to produce rare-earth-doped SiOx films (2016)
Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATERIAIS NANOESTRUTURADOS, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo. An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, v. 119, n. 14, p. 145302-1-145302-5, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4945677. Acesso em: 12 jul. 2024.
APA
Zanatta, A. R. (2016). An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, 119( 14), 145302-1-145302-5. doi:10.1063/1.4945677
NLM
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4945677
Vancouver
Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4945677
Artigo de periodico
Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses (2015)
Santos, J. F. M.; Terra, I. A. A.; Astrath, N. G. C.; Guimarães, F. B.; Baesso, M. L.; Nunes, Luiz Antônio de Oliveira; Catunda, Tomaz
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, ENERGIA, ALUMÍNIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, J. F. M. et al. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, v. 117, n. 5, p. 053102-1-053102-8, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4906781. Acesso em: 12 jul. 2024.
APA
Santos, J. F. M., Terra, I. A. A., Astrath, N. G. C., Guimarães, F. B., Baesso, M. L., Nunes, L. A. de O., & Catunda, T. (2015). Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, 117( 5), 053102-1-053102-8. doi:10.1063/1.4906781
NLM
Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4906781
Vancouver
Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4906781
Artigo de periodico
Carrier transfer in vertically stacked quantum ring-quantum dot chains (2015)
Mazur, Yu. I.; Lopes-Oliveira, V.; Souza, L. D.; Lopez-Richard, V.; Teodoro, M. D.; Dorogan, V. G.; Benamara, M.; Wu, J.; Tarasov, G. G.; Marega Júnior, Euclydes; Wang, Z. M.; Marques, G. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 12 jul. 2024.
APA
Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
NLM
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4918544
Vancouver
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4918544
Artigo de periodico
Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor (2015)
Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCOCA, D. et al. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, v. 117, n. 20, p. 205304-1-205304-6, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4921809. Acesso em: 12 jul. 2024.
APA
Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809
NLM
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4921809
Vancouver
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4921809
Artigo de periodico
On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon (2014)
Zanatta, Antonio Ricardo; Kordesch, M. E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SILÍCIO, ALUMÍNIO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, v. 116, n. 7, p. 073511-1-073511-7, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4893654. Acesso em: 12 jul. 2024.
APA
Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654
NLM
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4893654
Vancouver
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1063/1.4893654

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