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Artigo de periodico
Temperature-dependent Raman study of thermal parameters in CdS quantum dots (2012)
Freitas Neto, E. S.; Dantas, N. O.; Silva, S. W.; Morais, P. C.; Silva, Marcelo de Assumpção Pereira da ; Moreno, A. J. D.; López-Richard, V.; Marques, G. E.; Trallero-Giner, C.
Source: Nanotechnology. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN, POÇOS QUÂNTICOS
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ABNT
FREITAS NETO, E. S. et al. Temperature-dependent Raman study of thermal parameters in CdS quantum dots. Nanotechnology, v. 23, n. 12, p. 125701-1-125701-8, 2012Tradução . . Disponível em: https://doi.org/10.1088/0957-4484/23/12/125701. Acesso em: 05 nov. 2024.
APA
Freitas Neto, E. S., Dantas, N. O., Silva, S. W., Morais, P. C., Silva, M. de A. P. da, Moreno, A. J. D., et al. (2012). Temperature-dependent Raman study of thermal parameters in CdS quantum dots. Nanotechnology, 23( 12), 125701-1-125701-8. doi:10.1088/0957-4484/23/12/125701
NLM
Freitas Neto ES, Dantas NO, Silva SW, Morais PC, Silva M de AP da, Moreno AJD, López-Richard V, Marques GE, Trallero-Giner C. Temperature-dependent Raman study of thermal parameters in CdS quantum dots [Internet]. Nanotechnology. 2012 ; 23( 12): 125701-1-125701-8.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/0957-4484/23/12/125701
Vancouver
Freitas Neto ES, Dantas NO, Silva SW, Morais PC, Silva M de AP da, Moreno AJD, López-Richard V, Marques GE, Trallero-Giner C. Temperature-dependent Raman study of thermal parameters in CdS quantum dots [Internet]. Nanotechnology. 2012 ; 23( 12): 125701-1-125701-8.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/0957-4484/23/12/125701
Artigo de periodico
Resonant Raman scattering in 'CD''S IND. x''SE IND. 1-x' nanocrystals: effects of phonon confinement, composition, and elastic strain (2011)
Freitas Neto, E. S.; Silva, S. W.; Morais, P. C.; Vasilevskiy, M. I.; Silva, Marcelo de Assumpção Pereira da ; Dantas, N. O.
Source: Journal of Raman Spectroscopy. Unidade: IFSC
Subjects: NANOTECNOLOGIA, POÇOS QUÂNTICOS, CRESCIMENTO DE CRISTAIS, EMISSÃO DA LUZ
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ABNT
FREITAS NETO, E. S. et al. Resonant Raman scattering in 'CD''S IND. x''SE IND. 1-x' nanocrystals: effects of phonon confinement, composition, and elastic strain. Journal of Raman Spectroscopy, v. 42, n. 8, p. 1660-1669, 2011Tradução . . Disponível em: https://doi.org/10.1002/jrs.2918. Acesso em: 05 nov. 2024.
APA
Freitas Neto, E. S., Silva, S. W., Morais, P. C., Vasilevskiy, M. I., Silva, M. de A. P. da, & Dantas, N. O. (2011). Resonant Raman scattering in 'CD''S IND. x''SE IND. 1-x' nanocrystals: effects of phonon confinement, composition, and elastic strain. Journal of Raman Spectroscopy, 42( 8), 1660-1669. doi:10.1002/jrs.2918
NLM
Freitas Neto ES, Silva SW, Morais PC, Vasilevskiy MI, Silva M de AP da, Dantas NO. Resonant Raman scattering in 'CD''S IND. x''SE IND. 1-x' nanocrystals: effects of phonon confinement, composition, and elastic strain [Internet]. Journal of Raman Spectroscopy. 2011 ; 42( 8): 1660-1669.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1002/jrs.2918
Vancouver
Freitas Neto ES, Silva SW, Morais PC, Vasilevskiy MI, Silva M de AP da, Dantas NO. Resonant Raman scattering in 'CD''S IND. x''SE IND. 1-x' nanocrystals: effects of phonon confinement, composition, and elastic strain [Internet]. Journal of Raman Spectroscopy. 2011 ; 42( 8): 1660-1669.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1002/jrs.2918
Artigo de periodico
Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots (1998)
Pusep, Yuri A ; Zanelatto, G.; Silva, S. W.; Galzerani, J. C.; González-Borrero, Pedro Pablo; Toropov, A. I.; Basmaji, Pierre
Source: Physical Review B. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots. Physical Review B, v. 58, n. 4, p. R1770-R1773, 1998Tradução . . Disponível em: https://doi.org/10.1103/physrevb.58.r1770. Acesso em: 05 nov. 2024.
APA
Pusep, Y. A., Zanelatto, G., Silva, S. W., Galzerani, J. C., González-Borrero, P. P., Toropov, A. I., & Basmaji, P. (1998). Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots. Physical Review B, 58( 4), R1770-R1773. doi:10.1103/physrevb.58.r1770
NLM
Pusep YA, Zanelatto G, Silva SW, Galzerani JC, González-Borrero PP, Toropov AI, Basmaji P. Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots [Internet]. Physical Review B. 1998 ; 58( 4): R1770-R1773.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1103/physrevb.58.r1770
Vancouver
Pusep YA, Zanelatto G, Silva SW, Galzerani JC, González-Borrero PP, Toropov AI, Basmaji P. Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots [Internet]. Physical Review B. 1998 ; 58( 4): R1770-R1773.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1103/physrevb.58.r1770
Artigo de periodico
Surface phonon observed in GaAs wire crystals grown on porous Si (1998)
Silva, S. W.; Galzerani, J. C.; Lubyshev, D. I.; Basmaji, Pierre
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
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ABNT
SILVA, S. W. et al. Surface phonon observed in GaAs wire crystals grown on porous Si. Journal of Physics: Condensed Matter, v. 10, p. 9687-9690, 1998Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/10/43/011. Acesso em: 05 nov. 2024.
APA
Silva, S. W., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1998). Surface phonon observed in GaAs wire crystals grown on porous Si. Journal of Physics: Condensed Matter, 10, 9687-9690. doi:10.1088/0953-8984/10/43/011
NLM
Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Surface phonon observed in GaAs wire crystals grown on porous Si [Internet]. Journal of Physics: Condensed Matter. 1998 ; 10 9687-9690.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/0953-8984/10/43/011
Vancouver
Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Surface phonon observed in GaAs wire crystals grown on porous Si [Internet]. Journal of Physics: Condensed Matter. 1998 ; 10 9687-9690.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1088/0953-8984/10/43/011
Trabalho de evento-resumo
Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices (1996)
Pusep, Yuri A ; Silva, S. W.; Galzerani, J. C.; Lubyshev, D. I.; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Raman Spectroscopy. Unidade: IFSC
Assunto: FÍSICA
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ABNT
PUSEP, Yuri A et al. Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. 1996, Anais.. Pittsburg: Instituto de Física de São Carlos, Universidade de São Paulo, 1996. . Acesso em: 05 nov. 2024.
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1996). Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. In Abstracts. Pittsburg: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. Abstracts. 1996 ;[citado 2024 nov. 05 ]
Artigo de periodico
Raman study of interface roughness in ' ('ga''as') IND.N' / ' ('al''as') IND.N' superlattices grown of tilted surfaces: evidence of corrugation of the (113) interface (1996)
Silva, S. W.; Pusep, Yuri A ; Galzerani, J. C.; Pimenta, Marcos Assunção; Lubyshev, D. I.; González-Borrero, P. P.; Basmaji, Pierre
Source: Physical Review B. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
SILVA, S. W. et al. Raman study of interface roughness in ' ('ga''as') IND.N' / ' ('al''as') IND.N' superlattices grown of tilted surfaces: evidence of corrugation of the (113) interface. Physical Review B, v. 53, n. ja 1996, p. 1927-32, 1996Tradução . . Acesso em: 05 nov. 2024.
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Pimenta, M. A., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1996). Raman study of interface roughness in ' ('ga''as') IND.N' / ' ('al''as') IND.N' superlattices grown of tilted surfaces: evidence of corrugation of the (113) interface. Physical Review B, 53( ja 1996), 1927-32.
NLM
Silva SW, Pusep YA, Galzerani JC, Pimenta MA, Lubyshev DI, González-Borrero PP, Basmaji P. Raman study of interface roughness in ' ('ga''as') IND.N' / ' ('al''as') IND.N' superlattices grown of tilted surfaces: evidence of corrugation of the (113) interface. Physical Review B. 1996 ;53( ja 1996): 1927-32.[citado 2024 nov. 05 ]
Vancouver
Silva SW, Pusep YA, Galzerani JC, Pimenta MA, Lubyshev DI, González-Borrero PP, Basmaji P. Raman study of interface roughness in ' ('ga''as') IND.N' / ' ('al''as') IND.N' superlattices grown of tilted surfaces: evidence of corrugation of the (113) interface. Physical Review B. 1996 ;53( ja 1996): 1927-32.[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Raman study of corregation in the (331) A oriented 'GA' 'AS'/'AL' 'AS' superlattice (1995)
Pusep, Yuri A ; Silva, S. W.; Galzerani, J. C.; Nunes, Luiz Antônio de Oliveira ; Lubyshev, D. I.; Basmaji, Pierre
Source: Abstract. Conference titles: Meeting. Unidade: IFSC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
PUSEP, Yuri A et al. Raman study of corregation in the (331) A oriented 'GA' 'AS'/'AL' 'AS' superlattice. 1995, Anais.. Chicago: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Nunes, L. A. de O., Lubyshev, D. I., & Basmaji, P. (1995). Raman study of corregation in the (331) A oriented 'GA' 'AS'/'AL' 'AS' superlattice. In Abstract. Chicago: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Pusep YA, Silva SW, Galzerani JC, Nunes LA de O, Lubyshev DI, Basmaji P. Raman study of corregation in the (331) A oriented 'GA' 'AS'/'AL' 'AS' superlattice. Abstract. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Pusep YA, Silva SW, Galzerani JC, Nunes LA de O, Lubyshev DI, Basmaji P. Raman study of corregation in the (331) A oriented 'GA' 'AS'/'AL' 'AS' superlattice. Abstract. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice (1995)
Basmaji, Pierre; Gusev, G.; Lubyshev, D. I.; Silva, S. W.
Source: Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Assunto: FÍSICA
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ABNT
BASMAJI, Pierre et al. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Basmaji, P., Gusev, G., Lubyshev, D. I., & Silva, S. W. (1995). Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Basmaji P, Gusev G, Lubyshev DI, Silva SW. Charge capture in Al GaAs/GaAs heterostructures with disordered antidot lattice. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices (1995)
Pusep, Yuri A ; Silva, S. W.; Galzerani, J. C.; Lubyshev, D. I.; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Solid Surface. Unidade: IFSC
Assunto: POLÍMEROS (MATERIAIS)
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ABNT
PUSEP, Yuri A et al. Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices. 1995, Anais.. Birmingham: Institute of Physcis-IOP, 1995. . Acesso em: 05 nov. 2024.
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices. In Abstracts. Birmingham: Institute of Physcis-IOP.
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Spectroscopic atomic-scale characterization of interfaces in the GaAs/Al FGA As superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Trabalho de evento-resumo
Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices (1995)
Silva, S. W.; Pusep, Yuri A ; Galzerani, J C; Lubyshev, D I; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on Physics of Low Dimensional Structures. Unidade: IFSC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
SILVA, S. W. et al. Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices. 1995, Anais.. Dubna: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 05 nov. 2024.
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices. In Abstracts. Dubna: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311) a surface observed in Raman spectra of GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2024 nov. 05 ]
Artigo de periodico
Evidence of corrugation of the (311)a surface in the ' ('ga''as') IND.N'' ('al''as') IND.N' superlattices revealed by raman scattering (1995)
Silva, S. W.; Pusep, Yuri A ; Galzerani, J. C.; Pimenta, Marcos Assunção; Lubyshev, D I; Basmaji, Pierre
Source: Physics of Low-Dimensional Structure. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, S. W. et al. Evidence of corrugation of the (311)a surface in the ' ('ga''as') IND.N'' ('al''as') IND.N' superlattices revealed by raman scattering. Physics of Low-Dimensional Structure, v. 12, p. 215-22, 1995Tradução . . Acesso em: 05 nov. 2024.
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Pimenta, M. A., Lubyshev, D. I., & Basmaji, P. (1995). Evidence of corrugation of the (311)a surface in the ' ('ga''as') IND.N'' ('al''as') IND.N' superlattices revealed by raman scattering. Physics of Low-Dimensional Structure, 12, 215-22.
NLM
Silva SW, Pusep YA, Galzerani JC, Pimenta MA, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311)a surface in the ' ('ga''as') IND.N'' ('al''as') IND.N' superlattices revealed by raman scattering. Physics of Low-Dimensional Structure. 1995 ;12 215-22.[citado 2024 nov. 05 ]
Vancouver
Silva SW, Pusep YA, Galzerani JC, Pimenta MA, Lubyshev DI, Basmaji P. Evidence of corrugation of the (311)a surface in the ' ('ga''as') IND.N'' ('al''as') IND.N' superlattices revealed by raman scattering. Physics of Low-Dimensional Structure. 1995 ;12 215-22.[citado 2024 nov. 05 ]

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