ReP USP - Resultado da busca

Trabalho de evento-resumo
Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots (2013)
Cordeiro, R C; Vargas, C B; Henriques, André Bohomoletz; Maia, A D B; Quivy, Alain Andre; Koenraad, P M; Bayer, M
Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, MATERIAIS MAGNÉTICOS, POÇOS QUÂNTICOS
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ABNT
CORDEIRO, R C et al. Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots. 2013, Anais.. São Carlos: UFSCar, 2013. Disponível em: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115. Acesso em: 20 set. 2024.
APA
Cordeiro, R. C., Vargas, C. B., Henriques, A. B., Maia, A. D. B., Quivy, A. A., Koenraad, P. M., & Bayer, M. (2013). Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots. In . São Carlos: UFSCar. Recuperado de http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115
NLM
Cordeiro RC, Vargas CB, Henriques AB, Maia ADB, Quivy AA, Koenraad PM, Bayer M. Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots [Internet]. 2013 ;[citado 2024 set. 20 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115
Vancouver
Cordeiro RC, Vargas CB, Henriques AB, Maia ADB, Quivy AA, Koenraad PM, Bayer M. Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots [Internet]. 2013 ;[citado 2024 set. 20 ] Available from: http://www.bwsp16.ifsc.usp.br/index.php?option=com_abstract&view=viewabstract&absid=115
Artigo de periodico
The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots (2012)
Maia, A D B; Aquino, V M de; Dias, I F L; Silva, E C F da; Quivy, A A; Bindilatti, V
Source: JOURNAL OF PHYSICS D: APPLIED PHYSICS. Unidade: IF
Assunto: ÓPTICA ELETRÔNICA
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ABNT
MAIA, A D B et al. The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 45, p. 225104, 2012Tradução . . Disponível em: http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf. Acesso em: 20 set. 2024.
APA
Maia, A. D. B., Aquino, V. M. de, Dias, I. F. L., Silva, E. C. F. da, Quivy, A. A., & Bindilatti, V. (2012). The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 45, 225104. Recuperado de http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf
NLM
Maia ADB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2012 ;45 225104.[citado 2024 set. 20 ] Available from: http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf
Vancouver
Maia ADB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. The inﬂuence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2012 ;45 225104.[citado 2024 set. 20 ] Available from: http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf
Artigo de periodico
Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing (2012)
Keizer, J. G; Henriques, André Bohomoletz; Maia, A D B; Quivy, A. A.; Koenraad, P. M
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Subjects: EPITAXIA POR FEIXE MOLECULAR, FÍSICA DA MATÉRIA CONDENSADA
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ABNT
KEIZER, J. G et al. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, v. 101 24, p. 243113, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4770371. Acesso em: 20 set. 2024.
APA
Keizer, J. G., Henriques, A. B., Maia, A. D. B., Quivy, A. A., & Koenraad, P. M. (2012). Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, 101 24, 243113. doi:10.1063/1.4770371
NLM
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 set. 20 ] Available from: https://doi.org/10.1063/1.4770371
Vancouver
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 set. 20 ] Available from: https://doi.org/10.1063/1.4770371
Artigo de periodico
Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots (2011)
Schwan, A; Maia, A D B; Quivy, A A; Henriques, A B
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
SCHWAN, A et al. Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots. APPLIED PHYSICS LETTERS, v. no2011, n. 22, p. 221914, 2011Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal. Acesso em: 20 set. 2024.
APA
Schwan, A., Maia, A. D. B., Quivy, A. A., & Henriques, A. B. (2011). Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots. APPLIED PHYSICS LETTERS, no2011( 22), 221914. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal
NLM
Schwan A, Maia ADB, Quivy AA, Henriques AB. Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ; no2011( 22): 221914.[citado 2024 set. 20 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal
Vancouver
Schwan A, Maia ADB, Quivy AA, Henriques AB. Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ; no2011( 22): 221914.[citado 2024 set. 20 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000099000022221914000001&idtype=cvips&doi=10.1063/1.3665634&prog=normal
Artigo de periodico
Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots (2011)
Schwan, A; Meiners, B M; Spatzek, S; Varwig, S; Yakovlev, D R; Bayer, M; Henriques, A B ; Quivy, A A ; Maia, A D B
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
SCHWAN, A et al. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots. APPLIED PHYSICS LETTERS, v. 98, n. ju2011, p. 233102, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3588413. Acesso em: 20 set. 2024.
APA
Schwan, A., Meiners, B. M., Spatzek, S., Varwig, S., Yakovlev, D. R., Bayer, M., et al. (2011). Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots. APPLIED PHYSICS LETTERS, 98( ju2011), 233102. doi:10.1063/1.3588413
NLM
Schwan A, Meiners BM, Spatzek S, Varwig S, Yakovlev DR, Bayer M, Henriques AB, Quivy AA, Maia ADB. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ;98( ju2011): 233102.[citado 2024 set. 20 ] Available from: https://doi.org/10.1063/1.3588413
Vancouver
Schwan A, Meiners BM, Spatzek S, Varwig S, Yakovlev DR, Bayer M, Henriques AB, Quivy AA, Maia ADB. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ;98( ju2011): 233102.[citado 2024 set. 20 ] Available from: https://doi.org/10.1063/1.3588413
Trabalho de evento-resumo
High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy (2011)
Fernandes, F M; Maia, A D B; Ferreira, D T; Silva, E C F da; Quivy, A A
Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: FOTODETECTORES
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ABNT
FERNANDES, F M et al. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf. Acesso em: 20 set. 2024.
APA
Fernandes, F. M., Maia, A. D. B., Ferreira, D. T., Silva, E. C. F. da, & Quivy, A. A. (2011). High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf
NLM
Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 set. 20 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf
Vancouver
Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 set. 20 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf
Trabalho de evento-resumo
Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots (2011)
Henriques, A B; Maia, A D B; Schwan, A; Quivy, A A; Yakovlev, D R; Bayer, M
Source: Resumo. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: SPIN
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ABNT
HENRIQUES, A B et al. Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf. Acesso em: 20 set. 2024.
APA
Henriques, A. B., Maia, A. D. B., Schwan, A., Quivy, A. A., Yakovlev, D. R., & Bayer, M. (2011). Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf
NLM
Henriques AB, Maia ADB, Schwan A, Quivy AA, Yakovlev DR, Bayer M. Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots [Internet]. Resumo. 2011 ;[citado 2024 set. 20 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf
Vancouver
Henriques AB, Maia ADB, Schwan A, Quivy AA, Yakovlev DR, Bayer M. Universal spintronic properties of (In,Ga)As/GaAs self-assembled quantum dots [Internet]. Resumo. 2011 ;[citado 2024 set. 20 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0142-1.pdf

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