Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots (2011)
- Authors:
- USP affiliated authors: HENRIQUES, ANDRE BOHOMOLETZ - IF ; QUIVY, ALAIN ANDRE - IF ; MAIA, ÁLVARO DIEGO BERNARDINO - IF
- Unidade: IF
- DOI: 10.1063/1.3588413
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: APPLIED PHYSICS LETTERS
- Volume/Número/Paginação/Ano: v.98, n.23, p. 233102, jun.2011
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SCHWAN, A et al. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots. APPLIED PHYSICS LETTERS, v. 98, n. ju2011, p. 233102, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3588413. Acesso em: 29 set. 2024. -
APA
Schwan, A., Meiners, B. M., Spatzek, S., Varwig, S., Yakovlev, D. R., Bayer, M., et al. (2011). Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots. APPLIED PHYSICS LETTERS, 98( ju2011), 233102. doi:10.1063/1.3588413 -
NLM
Schwan A, Meiners BM, Spatzek S, Varwig S, Yakovlev DR, Bayer M, Henriques AB, Quivy AA, Maia ADB. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ;98( ju2011): 233102.[citado 2024 set. 29 ] Available from: https://doi.org/10.1063/1.3588413 -
Vancouver
Schwan A, Meiners BM, Spatzek S, Varwig S, Yakovlev DR, Bayer M, Henriques AB, Quivy AA, Maia ADB. Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots [Internet]. APPLIED PHYSICS LETTERS. 2011 ;98( ju2011): 233102.[citado 2024 set. 29 ] Available from: https://doi.org/10.1063/1.3588413 - Spin coherence generation in negatively charged self-assembled (In,Ga)As quantum dots by pumping excited trion states
- Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing
- Optical measurement of miniband dispersion and bandgap renormalization in modulation-doped AlGaAs/GaAs superlattices
- Luminescence from miniband states in heavily doped superlattices
- Anisotropy of electron and hole g-factors in ('IN','GA')'AS' quantum dots
- Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields
- Tunable phase in the spin coherence generation of self-assembled (In,Ga)As quantum dots
- Light-induced magnetism using picosecond and femtosecond pulses in semiconductor nanostructures
- Luminescence from miniband states in heavily doped superlattices
- Crescimento, fabricação e teste de fotodetectores de radiação infravermelha baseados em pontos quânticos
Informações sobre o DOI: 10.1063/1.3588413 (Fonte: oaDOI API)
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