ReP USP - Resultado da busca

Trabalho de evento
Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation (2013)
Martino, João Antonio ; Agopian, Paula Ghedini Der ; Peruzzi, V. V.; Gimenez, Salvador Pinillos ; Silveira, M. A. G.; Simoen, Eddy ; Claeys, Cor
Source: EUROSOI 2013. Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits. Unidade: EP
Assunto: MICROELETRÔNICA (CONGRESSOS)
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ABNT
MARTINO, João Antonio et al. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 06 nov. 2024.
APA
Martino, J. A., Agopian, P. G. D., Peruzzi, V. V., Gimenez, S. P., Silveira, M. A. G., Simoen, E., & Claeys, C. (2013). Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. In EUROSOI 2013. Paris: Institut Superieur d'Électronique.
NLM
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2024 nov. 06 ]
Vancouver
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2024 nov. 06 ]
Parte de monografia/livro
Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs (2005)
Gimenez, Salvador Pinillos ; Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIMENEZ, Salvador Pinillos et al. Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Tradução . Pennington: The Electrochemical Society, 2005. . . Acesso em: 06 nov. 2024.
APA
Gimenez, S. P., Pavanello, M. A., Martino, J. A., & Flandre, D. (2005). Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs. In International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Pennington: The Electrochemical Society.
NLM
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs. In: International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Pennington: The Electrochemical Society; 2005. [citado 2024 nov. 06 ]
Vancouver
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs. In: International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings. Pennington: The Electrochemical Society; 2005. [citado 2024 nov. 06 ]
Trabalho de evento
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range (2005)
Gimenez, Salvador Pinillos ; Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIMENEZ, Salvador Pinillos et al. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 06 nov. 2024.
APA
Gimenez, S. P., Pavanello, M. A., Martino, J. A., & Flandre, D. (2005). Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 06 ]
Vancouver
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2024 nov. 06 ]
Trabalho de evento
Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs (2003)
Gimenez, Salvador Pinillos ; Pavanello, Marcelo Antonio ; Martino, João Antonio ; Adriaensen, S.; Flandre, Denis
Source: SBCCI 03 : proceedings. Conference titles: Symposium on Integrated Circuits and Systems Design. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
GIMENEZ, Salvador Pinillos et al. Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs. 2003, Anais.. Piscataway: IEEE Computer Society, 2003. . Acesso em: 06 nov. 2024.
APA
Gimenez, S. P., Pavanello, M. A., Martino, J. A., Adriaensen, S., & Flandre, D. (2003). Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs. In SBCCI 03 : proceedings. Piscataway: IEEE Computer Society.
NLM
Gimenez SP, Pavanello MA, Martino JA, Adriaensen S, Flandre D. Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs. SBCCI 03 : proceedings. 2003 ;[citado 2024 nov. 06 ]
Vancouver
Gimenez SP, Pavanello MA, Martino JA, Adriaensen S, Flandre D. Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs. SBCCI 03 : proceedings. 2003 ;[citado 2024 nov. 06 ]
Parte de monografia/livro
A simple analytical model of graded-channel SOI nMOSFET transconductance (2002)
Gimenez, Salvador Pinillos ; Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIMENEZ, Salvador Pinillos e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. A simple analytical model of graded-channel SOI nMOSFET transconductance. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 06 nov. 2024.
APA
Gimenez, S. P., Pavanello, M. A., & Martino, J. A. (2002). A simple analytical model of graded-channel SOI nMOSFET transconductance. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 nov. 06 ]
Vancouver
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 nov. 06 ]
Trabalho de evento
Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime (2001)
Gimenez, Salvador Pinillos ; Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: SBMicro 2001: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
GIMENEZ, Salvador Pinillos e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 06 nov. 2024.
APA
Gimenez, S. P., Pavanello, M. A., & Martino, J. A. (2001). Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. In SBMicro 2001: proceedings. Brasília: SBMicro.
NLM
Gimenez SP, Pavanello MA, Martino JA. Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. SBMicro 2001: proceedings. 2001 ;[citado 2024 nov. 06 ]
Vancouver
Gimenez SP, Pavanello MA, Martino JA. Behavior of the graded-channel fully-depleted SOI nMOSFET in suthreshold regime. SBMicro 2001: proceedings. 2001 ;[citado 2024 nov. 06 ]
Dissertação (Mestrado)
Dispersões aleatórias em circuitos integrados (1990)
Gimenez, Salvador Pinillos ; Andrade, Carlos Américo Morato de (Orientador)
Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
GIMENEZ, Salvador Pinillos. Dispersões aleatórias em circuitos integrados. 1990. Dissertação (Mestrado) – Universidade de São Paulo, São Paulo, 1990. . Acesso em: 06 nov. 2024.
APA
Gimenez, S. P. (1990). Dispersões aleatórias em circuitos integrados (Dissertação (Mestrado). Universidade de São Paulo, São Paulo.
NLM
Gimenez SP. Dispersões aleatórias em circuitos integrados. 1990 ;[citado 2024 nov. 06 ]
Vancouver
Gimenez SP. Dispersões aleatórias em circuitos integrados. 1990 ;[citado 2024 nov. 06 ]
Trabalho de evento
Casador de impedancia para microfone de eletreto (1986)
Gimenez, Salvador Pinillos ; Ramírez Fernandez, Francisco Javier ; Bodinaud, Jean Albert; Montoro, Carlos Galup
Source: Anais. Conference titles: Congresso da Sociedade Brasileira de Microeletronica. Unidades: IEE, EP
Assunto: MICROELETRÔNICA
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ABNT
GIMENEZ, Salvador Pinillos et al. Casador de impedancia para microfone de eletreto. 1986, Anais.. Campinas: Sbmicro/Telebras, 1986. . Acesso em: 06 nov. 2024.
APA
Gimenez, S. P., Ramírez Fernandez, F. J., Bodinaud, J. A., & Montoro, C. G. (1986). Casador de impedancia para microfone de eletreto. In Anais. Campinas: Sbmicro/Telebras.
NLM
Gimenez SP, Ramírez Fernandez FJ, Bodinaud JA, Montoro CG. Casador de impedancia para microfone de eletreto. Anais. 1986 ;[citado 2024 nov. 06 ]
Vancouver
Gimenez SP, Ramírez Fernandez FJ, Bodinaud JA, Montoro CG. Casador de impedancia para microfone de eletreto. Anais. 1986 ;[citado 2024 nov. 06 ]

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