Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range (2005)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; PAVANELLO, MARCELO ANTONIO - EP
- School: EP
- Subject: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Place of publication: Pennington
- Date published: 2005
- Source:
- Título do periódico: Microelectronics Technology and Devices SBMICRO 2005
- Conference title: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
GIMENEZ, Salvador Pinillos et al. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 13 ago. 2022. -
APA
Gimenez, S. P., Pavanello, M. A., Martino, J. A., & Flandre, D. (2005). Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society. -
NLM
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2022 ago. 13 ] -
Vancouver
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2022 ago. 13 ] - Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K
- Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs
- A physically-based continuous model for graded-channel SOI MOSFET
- Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
- Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
- Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
- Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
- Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures
- Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs
- Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
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