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Trabalho de evento-resumo
Bismuth-induced Raman modes in GaSb1-x Bi x alloys (2020)
Souto, Sérgio Paulo Amaral ; Hilska, Joonas; Gobato, Yara Galvao ; Souza, D.; Andrade, Marcelo Barbosa de ; Koivusalo, Eero; Puustinen, Janne; Guina, Mircea
Source: Program. Conference titles: Encontro de Outono da Sociedade Brasileira de Física - EOSBF. Unidades: FZEA, IFSC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
SOUTO, Sérgio Paulo Amaral et al. Bismuth-induced Raman modes in GaSb1-x Bi x alloys. 2020, Anais.. São Paulo: Sociedade Brasileira de Fisica - SBF, 2020. Disponível em: https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0534-1.pdf. Acesso em: 19 nov. 2024.
APA
Souto, S. P. A., Hilska, J., Gobato, Y. G., Souza, D., Andrade, M. B. de, Koivusalo, E., et al. (2020). Bismuth-induced Raman modes in GaSb1-x Bi x alloys. In Program. São Paulo: Sociedade Brasileira de Fisica - SBF. Recuperado de https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0534-1.pdf
NLM
Souto SPA, Hilska J, Gobato YG, Souza D, Andrade MB de, Koivusalo E, Puustinen J, Guina M. Bismuth-induced Raman modes in GaSb1-x Bi x alloys [Internet]. Program. 2020 ;[citado 2024 nov. 19 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0534-1.pdf
Vancouver
Souto SPA, Hilska J, Gobato YG, Souza D, Andrade MB de, Koivusalo E, Puustinen J, Guina M. Bismuth-induced Raman modes in GaSb1-x Bi x alloys [Internet]. Program. 2020 ;[citado 2024 nov. 19 ] Available from: https://sec.sbfisica.org.br/eventos/eosbf/2020/sys/resumos/R0534-1.pdf
Artigo de periodico
Raman spectroscopy of GaSb1-xBix alloys with high Bi content (2020)
Souto, Sérgio Paulo Amaral; Gobato, Y. Galvão; Souza, D.; Andrade, Marcelo Barbosa de ; Koivusalo, E.; Puustinen, J.; Guina, M.
Source: Applied Physics Letters. Unidades: FZEA, IFSC
Subjects: ESPECTROSCOPIA RAMAN, POLÍMEROS (MATERIAIS)
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ABNT
SOUTO, Sérgio Paulo Amaral et al. Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, v. 116, n. 20, p. 202103-1-202103-5, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0008100. Acesso em: 19 nov. 2024.
APA
Souto, S. P. A., Gobato, Y. G., Souza, D., Andrade, M. B. de, Koivusalo, E., Puustinen, J., & Guina, M. (2020). Raman spectroscopy of GaSb1-xBix alloys with high Bi content. Applied Physics Letters, 116( 20), 202103-1-202103-5. doi:10.1063/5.0008100
NLM
Souto SPA, Gobato YG, Souza D, Andrade MB de, Koivusalo E, Puustinen J, Guina M. Raman spectroscopy of GaSb1-xBix alloys with high Bi content [Internet]. Applied Physics Letters. 2020 ; 116( 20): 202103-1-202103-5.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1063/5.0008100
Vancouver
Souto SPA, Gobato YG, Souza D, Andrade MB de, Koivusalo E, Puustinen J, Guina M. Raman spectroscopy of GaSb1-xBix alloys with high Bi content [Internet]. Applied Physics Letters. 2020 ; 116( 20): 202103-1-202103-5.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1063/5.0008100
Artigo de periodico
Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires (2019)
Piton, Marcelo Rizzo; Koivusalo, Eero; Hakkarainen, Teemu; Galeti, Helder Vinícius Avanço; Rodrigues, Ariano de Giovanni; Talmila, Soile; Souto, Sérgio Paulo Amaral; Lupo, Donald; Gobato, Yara Galvao; Guina, Mircea
Source: Nanotechnology. Unidade: FZEA
Subjects: SEMICONDUTORES, ÓPTICA ELETRÔNICA
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PITON, Marcelo Rizzo et al. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, v. 30, n. 33, p. 1-11, 2019Tradução . . Disponível em: https://doi.org/10.1088/1361-6528/ab1a97. Acesso em: 19 nov. 2024.
APA
Piton, M. R., Koivusalo, E., Hakkarainen, T., Galeti, H. V. A., Rodrigues, A. de G., Talmila, S., et al. (2019). Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, 30( 33), 1-11. doi:10.1088/1361-6528/ab1a97
NLM
Piton MR, Koivusalo E, Hakkarainen T, Galeti HVA, Rodrigues A de G, Talmila S, Souto SPA, Lupo D, Gobato YG, Guina M. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires [Internet]. Nanotechnology. 2019 ; 30( 33): 1-11.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/1361-6528/ab1a97
Vancouver
Piton MR, Koivusalo E, Hakkarainen T, Galeti HVA, Rodrigues A de G, Talmila S, Souto SPA, Lupo D, Gobato YG, Guina M. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires [Internet]. Nanotechnology. 2019 ; 30( 33): 1-11.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/1361-6528/ab1a97
Artigo de periodico
Legacies of domestication, trade and herder mobility shape extant male zebu cattle diversity in South Asia and Africa (2018)
Pérez-Pardal, Lucía; Sánchez-Garcia, Alejandro; Álvarez, Isabel; Traoré, Amadou; Ferraz, José Bento Sterman; Fernández, Iván; Costa, Vânia; Chen, Shanyuan; Tapio, Miika; Cantet, Rodolfo J. C.; Patel, Ajita; Meadow, Richard H.; Marshall, Fiona B.; Beja-Pereira, Albano; Goyache, Félix
Source: Scientific Reports. Unidade: FZEA
Subjects: GADO ZEBU, DOMESTICAÇÃO DE ANIMAIS, GENÉTICA ANIMAL
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ABNT
PÉREZ-PARDAL, Lucía et al. Legacies of domestication, trade and herder mobility shape extant male zebu cattle diversity in South Asia and Africa. Scientific Reports, v. 8, p. 1-8, 2018Tradução . . Disponível em: https://doi.org/10.1038/s41598-018-36444-7. Acesso em: 19 nov. 2024.
APA
Pérez-Pardal, L., Sánchez-Garcia, A., Álvarez, I., Traoré, A., Ferraz, J. B. S., Fernández, I., et al. (2018). Legacies of domestication, trade and herder mobility shape extant male zebu cattle diversity in South Asia and Africa. Scientific Reports, 8, 1-8. doi:10.1038/s41598-018-36444-7
NLM
Pérez-Pardal L, Sánchez-Garcia A, Álvarez I, Traoré A, Ferraz JBS, Fernández I, Costa V, Chen S, Tapio M, Cantet RJC, Patel A, Meadow RH, Marshall FB, Beja-Pereira A, Goyache F. Legacies of domestication, trade and herder mobility shape extant male zebu cattle diversity in South Asia and Africa [Internet]. Scientific Reports. 2018 ; 8 1-8.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1038/s41598-018-36444-7
Vancouver
Pérez-Pardal L, Sánchez-Garcia A, Álvarez I, Traoré A, Ferraz JBS, Fernández I, Costa V, Chen S, Tapio M, Cantet RJC, Patel A, Meadow RH, Marshall FB, Beja-Pereira A, Goyache F. Legacies of domestication, trade and herder mobility shape extant male zebu cattle diversity in South Asia and Africa [Internet]. Scientific Reports. 2018 ; 8 1-8.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1038/s41598-018-36444-7
Artigo de periodico
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates (2018)
Prando, G. A.; Gordo, Vanessa Orsi; Puustinen, J.; Hilska, J.; Alghamdi, H. M.; Som, G; Gunes, M; Akyol, M; Souto, Sérgio Paulo Amaral; Rodrigues, Ariano de Giovanni; Galeti, Helder Vinícius Avanço; Henini, M; Gobato, Yara Galvao; Guina, Mircea
Source: Semiconductor Science and Technology. Unidade: FZEA
Subjects: FOTOLUMINESCÊNCIA, EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTORES
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ABNT
PRANDO, G. A. et al. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 33, n. 8, p. 1-7, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aad02e. Acesso em: 19 nov. 2024.
APA
Prando, G. A., Gordo, V. O., Puustinen, J., Hilska, J., Alghamdi, H. M., Som, G., et al. (2018). Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33( 8), 1-7. doi:10.1088/1361-6641/aad02e
NLM
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/1361-6641/aad02e
Vancouver
Prando GA, Gordo VO, Puustinen J, Hilska J, Alghamdi HM, Som G, Gunes M, Akyol M, Souto SPA, Rodrigues A de G, Galeti HVA, Henini M, Gobato YG, Guina M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2018 ; 33( 8): 1-7.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1088/1361-6641/aad02e
Trabalho de evento-resumo
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties (2018)
Piton, Marcelo Rizzo; Koivusalo, Eero; Suomalainen, Soile; Souto, Sérgio Paulo Amaral; Galeti, Helder Vinícius Avanço; Lupo, Donald; Rodrigues, Ariano de Giovanni; Pizani, Paulo Sérgio; Gobato, Yara Galvao; Guina, Mircea
Source: Proceedings. Conference titles: Brazilian MRS Meeting. Unidade: FZEA
Assunto: EPITAXIA POR FEIXE MOLECULAR
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ABNT
PITON, Marcelo Rizzo et al. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. 2018, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2018. Disponível em: https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf. Acesso em: 19 nov. 2024.
APA
Piton, M. R., Koivusalo, E., Suomalainen, S., Souto, S. P. A., Galeti, H. V. A., Lupo, D., et al. (2018). Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. In Proceedings. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf
NLM
Piton MR, Koivusalo E, Suomalainen S, Souto SPA, Galeti HVA, Lupo D, Rodrigues A de G, Pizani PS, Gobato YG, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings. 2018 ;[citado 2024 nov. 19 ] Available from: https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf
Vancouver
Piton MR, Koivusalo E, Suomalainen S, Souto SPA, Galeti HVA, Lupo D, Rodrigues A de G, Pizani PS, Gobato YG, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings. 2018 ;[citado 2024 nov. 19 ] Available from: https://new.eventweb.com.br/specific-files/manuscripts/xviisbpmat/1036_1524863860.pdf
Trabalho de evento-resumo
Structural and transport properties of Be-doped self-catalysed GaAs nanowires grown by molecular beam epitaxy (2018)
Piton, Marcelo Rizzo; Koivusalo, Eero; Suomalainen, Soile; Hakkarainen, Teemu; Souto, Sérgio Paulo Amaral; Galeti, Helder Vinícius Avanço; Lupo, Donald; Rodrigues, Ariano de Giovanni; Gobato, Yara Galvao; Guina, Mircea
Source: Abstracts NSP. Conference titles: International Workshop and School - Nanostructures for Photonics. Unidade: FZEA
Subjects: EPITAXIA POR FEIXE MOLECULAR, NANOPARTÍCULAS, FOTÔNICA
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ABNT
PITON, Marcelo Rizzo et al. Structural and transport properties of Be-doped self-catalysed GaAs nanowires grown by molecular beam epitaxy. 2018, Anais.. Saint Petersburg: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo, 2018. Disponível em: http://nsp2018.ifmo.ru/upload/files/4a6750171b9a6dc588b28f49577ad286.pdf. Acesso em: 19 nov. 2024.
APA
Piton, M. R., Koivusalo, E., Suomalainen, S., Hakkarainen, T., Souto, S. P. A., Galeti, H. V. A., et al. (2018). Structural and transport properties of Be-doped self-catalysed GaAs nanowires grown by molecular beam epitaxy. In Abstracts NSP. Saint Petersburg: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo. Recuperado de http://nsp2018.ifmo.ru/upload/files/4a6750171b9a6dc588b28f49577ad286.pdf
NLM
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Lupo D, Rodrigues A de G, Gobato YG, Guina M. Structural and transport properties of Be-doped self-catalysed GaAs nanowires grown by molecular beam epitaxy [Internet]. Abstracts NSP. 2018 ;[citado 2024 nov. 19 ] Available from: http://nsp2018.ifmo.ru/upload/files/4a6750171b9a6dc588b28f49577ad286.pdf
Vancouver
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Lupo D, Rodrigues A de G, Gobato YG, Guina M. Structural and transport properties of Be-doped self-catalysed GaAs nanowires grown by molecular beam epitaxy [Internet]. Abstracts NSP. 2018 ;[citado 2024 nov. 19 ] Available from: http://nsp2018.ifmo.ru/upload/files/4a6750171b9a6dc588b28f49577ad286.pdf
Trabalho de evento-resumo
Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties (2018)
Gobato, Yara Galvao; Galeti, Helder Vinícius Avanço; Piton, Marcelo Rizzo; Koivusalo, Eero; Suomalainen, Soile; Hakkarainen, Teemu; Souto, Sérgio Paulo Amaral; Rodrigues, Ariano de Giovanni; Pizani, Paulo Sérgio; Lupo, Donald; Guina, Mircea
Source: Proceedings ICPS. Conference titles: International Conference on the Physics of Semiconductors. Unidade: FZEA
Subjects: EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTORES
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ABNT
GOBATO, Yara Galvao et al. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. 2018, Anais.. Montpellier: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo, 2018. Disponível em: http://www.icps2018.org/en/program/abstract. Acesso em: 19 nov. 2024.
APA
Gobato, Y. G., Galeti, H. V. A., Piton, M. R., Koivusalo, E., Suomalainen, S., Hakkarainen, T., et al. (2018). Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties. In Proceedings ICPS. Montpellier: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo. Recuperado de http://www.icps2018.org/en/program/abstract
NLM
Gobato YG, Galeti HVA, Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Rodrigues A de G, Pizani PS, Lupo D, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings ICPS. 2018 ;[citado 2024 nov. 19 ] Available from: http://www.icps2018.org/en/program/abstract
Vancouver
Gobato YG, Galeti HVA, Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Rodrigues A de G, Pizani PS, Lupo D, Guina M. Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties [Internet]. Proceedings ICPS. 2018 ;[citado 2024 nov. 19 ] Available from: http://www.icps2018.org/en/program/abstract
Trabalho de evento-resumo
Effect of Te and Be doping of GaAs nanowires (2017)
Piton, Marcelo Rizzo; Galeti, Helder Vinícius Avanço; Rodrigues, Ariano D; Gobato, Yara Galvao; Souto, Sérgio Paulo Amaral; Koivusalo, Eero; Hakkarainen, Teemu; Suomalainen, Soile; Guina, Mircea
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada - ENFMC. Unidade: FZEA
Subjects: SEMICONDUTORES, MICROSCOPIA ELETRÔNICA, FÍSICA DA MATÉRIA CONDENSADA
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ABNT
PITON, Marcelo Rizzo et al. Effect of Te and Be doping of GaAs nanowires. 2017, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2017. Disponível em: http://sec.sbfisica.org.br/eventos/enfmc/xl/sys/resumos/R0439-1.pdf. Acesso em: 19 nov. 2024.
APA
Piton, M. R., Galeti, H. V. A., Rodrigues, A. D., Gobato, Y. G., Souto, S. P. A., Koivusalo, E., et al. (2017). Effect of Te and Be doping of GaAs nanowires. In Resumos. São Paulo: Sociedade Brasileira de Física - SBF. Recuperado de http://sec.sbfisica.org.br/eventos/enfmc/xl/sys/resumos/R0439-1.pdf
NLM
Piton MR, Galeti HVA, Rodrigues AD, Gobato YG, Souto SPA, Koivusalo E, Hakkarainen T, Suomalainen S, Guina M. Effect of Te and Be doping of GaAs nanowires [Internet]. Resumos. 2017 ;[citado 2024 nov. 19 ] Available from: http://sec.sbfisica.org.br/eventos/enfmc/xl/sys/resumos/R0439-1.pdf
Vancouver
Piton MR, Galeti HVA, Rodrigues AD, Gobato YG, Souto SPA, Koivusalo E, Hakkarainen T, Suomalainen S, Guina M. Effect of Te and Be doping of GaAs nanowires [Internet]. Resumos. 2017 ;[citado 2024 nov. 19 ] Available from: http://sec.sbfisica.org.br/eventos/enfmc/xl/sys/resumos/R0439-1.pdf
Trabalho de evento-resumo
Optical properties of Te and Be doped self-catalyzed GaAs nanowires grown on Si (2017)
Piton, Marcelo Rizzo; Koivusalo, Eero; Hakkarainen, Teemu; Suomalainen, Soile; Souto, Sérgio Paulo Amaral; Galeti, Helder Vinícius Avanço; Rodrigues, Ariano D.; Gobato, Yara Galvao; Guina, Mircea
Source: Abstracts BWSP. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: FZEA
Subjects: NANOPARTÍCULAS, SEMICONDUTORES (FÍSICO-QUÍMICA), MATERIAIS NANOESTRUTURADOS, MICROSCOPIA ELETRÔNICA
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ABNT
PITON, Marcelo Rizzo et al. Optical properties of Te and Be doped self-catalyzed GaAs nanowires grown on Si. 2017, Anais.. Maresias: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo, 2017. Disponível em: http://bwsp18.if.usp.br/sites/default/files/book-18BWSP_11-Aug-2017.pdf. Acesso em: 19 nov. 2024.
APA
Piton, M. R., Koivusalo, E., Hakkarainen, T., Suomalainen, S., Souto, S. P. A., Galeti, H. V. A., et al. (2017). Optical properties of Te and Be doped self-catalyzed GaAs nanowires grown on Si. In Abstracts BWSP. Maresias: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo. Recuperado de http://bwsp18.if.usp.br/sites/default/files/book-18BWSP_11-Aug-2017.pdf
NLM
Piton MR, Koivusalo E, Hakkarainen T, Suomalainen S, Souto SPA, Galeti HVA, Rodrigues AD, Gobato YG, Guina M. Optical properties of Te and Be doped self-catalyzed GaAs nanowires grown on Si [Internet]. Abstracts BWSP. 2017 ;[citado 2024 nov. 19 ] Available from: http://bwsp18.if.usp.br/sites/default/files/book-18BWSP_11-Aug-2017.pdf
Vancouver
Piton MR, Koivusalo E, Hakkarainen T, Suomalainen S, Souto SPA, Galeti HVA, Rodrigues AD, Gobato YG, Guina M. Optical properties of Te and Be doped self-catalyzed GaAs nanowires grown on Si [Internet]. Abstracts BWSP. 2017 ;[citado 2024 nov. 19 ] Available from: http://bwsp18.if.usp.br/sites/default/files/book-18BWSP_11-Aug-2017.pdf
Trabalho de evento
Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy (2017)
Piton, Marcelo Rizzo; Koivusalo, Eero; Suomalainen, Soile; Hakkarainen, Teemu; Souto, Sérgio Paulo Amaral; Galeti, Helder Vinícius Avanço; Schramm, Andreas; Gobato, Yara Galvao; Guina, Mircea
Source: Proceedings. Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: FZEA
Subjects: FÍSICA ÓPTICA, EPITAXIA POR FEIXE MOLECULAR, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN
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ABNT
PITON, Marcelo Rizzo et al. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy. 2017, Anais.. Piscataway, NJ: IEEE, 2017. Disponível em: https://doi.org/10.1109/SBMicro.2017.8113028. Acesso em: 19 nov. 2024.
APA
Piton, M. R., Koivusalo, E., Suomalainen, S., Hakkarainen, T., Souto, S. P. A., Galeti, H. V. A., et al. (2017). Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy. In Proceedings. Piscataway, NJ: IEEE. doi:10.1109/SBMicro.2017.8113028
NLM
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Schramm A, Gobato YG, Guina M. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy [Internet]. Proceedings. 2017 ;[citado 2024 nov. 19 ] Available from: https://doi.org/10.1109/SBMicro.2017.8113028
Vancouver
Piton MR, Koivusalo E, Suomalainen S, Hakkarainen T, Souto SPA, Galeti HVA, Schramm A, Gobato YG, Guina M. Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy [Internet]. Proceedings. 2017 ;[citado 2024 nov. 19 ] Available from: https://doi.org/10.1109/SBMicro.2017.8113028
Trabalho de evento-resumo
Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si (2017)
Piton, Marcelo Rizzo; Koivusalo, Eero; Hakkarainen, Teemu; Suomalainen, Soile; Galeti, Helder Vinícius Avanço; Souto, Sérgio Paulo Amaral; Gobato, Yara Galvao; Guina, Mircea
Source: Abstracts. Conference titles: Optics & Photonics Days. Unidade: FZEA
Subjects: EPITAXIA POR FEIXE MOLECULAR, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN, SEMICONDUTORES (FÍSICO-QUÍMICA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PITON, Marcelo Rizzo et al. Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. 2017, Anais.. Oulu: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo, 2017. . Acesso em: 19 nov. 2024.
APA
Piton, M. R., Koivusalo, E., Hakkarainen, T., Suomalainen, S., Galeti, H. V. A., Souto, S. P. A., et al. (2017). Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. In Abstracts. Oulu: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo.
NLM
Piton MR, Koivusalo E, Hakkarainen T, Suomalainen S, Galeti HVA, Souto SPA, Gobato YG, Guina M. Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. Abstracts. 2017 ;[citado 2024 nov. 19 ]
Vancouver
Piton MR, Koivusalo E, Hakkarainen T, Suomalainen S, Galeti HVA, Souto SPA, Gobato YG, Guina M. Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. Abstracts. 2017 ;[citado 2024 nov. 19 ]

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Countries/Territories

Funding Agencies

Non normalized affiliation

Countries of institutions of collaboration