Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si (2017)
- Authors:
- Autor USP: SOUTO, SERGIO PAULO AMARAL - FZEA
- Unidade: FZEA
- Subjects: EPITAXIA POR FEIXE MOLECULAR; FOTOLUMINESCÊNCIA; ESPECTROSCOPIA RAMAN; SEMICONDUTORES (FÍSICO-QUÍMICA)
- Language: Inglês
- Imprenta:
- Source:
- Título: Abstracts
- Conference titles: Optics & Photonics Days
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ABNT
PITON, Marcelo Rizzo et al. Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. 2017, Anais.. Oulu: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo, 2017. . Acesso em: 15 mar. 2026. -
APA
Piton, M. R., Koivusalo, E., Hakkarainen, T., Suomalainen, S., Galeti, H. V. A., Souto, S. P. A., et al. (2017). Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. In Abstracts. Oulu: Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de São Paulo. -
NLM
Piton MR, Koivusalo E, Hakkarainen T, Suomalainen S, Galeti HVA, Souto SPA, Gobato YG, Guina M. Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. Abstracts. 2017 ;[citado 2026 mar. 15 ] -
Vancouver
Piton MR, Koivusalo E, Hakkarainen T, Suomalainen S, Galeti HVA, Souto SPA, Gobato YG, Guina M. Optical properties of Be and Te-doped GaAs nanowires grown by molecular beam epitaxy on Si. Abstracts. 2017 ;[citado 2026 mar. 15 ] - Análise do índice de reprovação
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