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Artigo de periodico
Impulse and continuous control of peicewise deterministic Markov processes (2000)
Costa, Oswaldo Luiz do Valle ; Raymundo, A. B.
Source: Stochastics and Stochastics Reports. Unidade: EP
Assunto: PROCESSOS DE MARKOV
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ABNT
COSTA, Oswaldo Luiz do Valle e RAYMUNDO, A. B. Impulse and continuous control of peicewise deterministic Markov processes. Stochastics and Stochastics Reports, v. 70, p. 75-107, 2000Tradução . . Disponível em: https://doi.org/10.1080/17442500008834246. Acesso em: 05 out. 2024.
APA
Costa, O. L. do V., & Raymundo, A. B. (2000). Impulse and continuous control of peicewise deterministic Markov processes. Stochastics and Stochastics Reports, 70, 75-107. doi:10.1080/17442500008834246
NLM
Costa OL do V, Raymundo AB. Impulse and continuous control of peicewise deterministic Markov processes [Internet]. Stochastics and Stochastics Reports. 2000 ; 70 75-107.[citado 2024 out. 05 ] Available from: https://doi.org/10.1080/17442500008834246
Vancouver
Costa OL do V, Raymundo AB. Impulse and continuous control of peicewise deterministic Markov processes [Internet]. Stochastics and Stochastics Reports. 2000 ; 70 75-107.[citado 2024 out. 05 ] Available from: https://doi.org/10.1080/17442500008834246
Artigo de periodico
Identification of the Jules-Atherton model parameters using random and deterministic searches (2000)
Del Moral Hernandez, Emilio ; Muranaka, Carlos S.; Cardoso, José Roberto
Source: Physica B. Unidade: EP
Assunto: MAGNETISMO
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ABNT
DEL MORAL HERNANDEZ, Emilio e MURANAKA, Carlos S. e CARDOSO, José Roberto. Identification of the Jules-Atherton model parameters using random and deterministic searches. Physica B, v. 275, p. 212-215, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(99)00766-8. Acesso em: 05 out. 2024.
APA
Del Moral Hernandez, E., Muranaka, C. S., & Cardoso, J. R. (2000). Identification of the Jules-Atherton model parameters using random and deterministic searches. Physica B, 275, 212-215. doi:10.1016/s0921-4526(99)00766-8
NLM
Del Moral Hernandez E, Muranaka CS, Cardoso JR. Identification of the Jules-Atherton model parameters using random and deterministic searches [Internet]. Physica B. 2000 ; 275 212-215.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0921-4526(99)00766-8
Vancouver
Del Moral Hernandez E, Muranaka CS, Cardoso JR. Identification of the Jules-Atherton model parameters using random and deterministic searches [Internet]. Physica B. 2000 ; 275 212-215.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0921-4526(99)00766-8
Artigo de periodico
Robust H2 - control for discrete time Markovian jump linear systems (2000)
Costa, Oswaldo Luiz do Valle ; Marques, Ricardo Paulino
Source: International Journal of Control. Unidade: EP
Assunto: CONTROLE (TEORIA DE SISTEMAS E CONTROLE)
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ABNT
COSTA, Oswaldo Luiz do Valle e MARQUES, Ricardo Paulino. Robust H2 - control for discrete time Markovian jump linear systems. International Journal of Control, v. 73, n. 1, p. 11-21. 2000, 2000Tradução . . Disponível em: https://doi.org/10.1080/002071700219894. Acesso em: 05 out. 2024.
APA
Costa, O. L. do V., & Marques, R. P. (2000). Robust H2 - control for discrete time Markovian jump linear systems. International Journal of Control, 73( 1), 11-21. 2000. doi:10.1080/002071700219894
NLM
Costa OL do V, Marques RP. Robust H2 - control for discrete time Markovian jump linear systems [Internet]. International Journal of Control. 2000 ; 73( 1): 11-21. 2000.[citado 2024 out. 05 ] Available from: https://doi.org/10.1080/002071700219894
Vancouver
Costa OL do V, Marques RP. Robust H2 - control for discrete time Markovian jump linear systems [Internet]. International Journal of Control. 2000 ; 73( 1): 11-21. 2000.[citado 2024 out. 05 ] Available from: https://doi.org/10.1080/002071700219894
Artigo de periodico
Estratégias adaptativas em sociedades de formigas (1999)
Bevilacqua, Renato; Castaño, Marcos Casado; Monteiro, Luiz Henrique Alves ; Piqueira, José Roberto Castilho
Source: Controle & Automação. Unidade: EP
Assunto: INTELIGÊNCIA ARTIFICIAL
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BEVILACQUA, Renato et al. Estratégias adaptativas em sociedades de formigas. Controle & Automação, v. 10, n. 3, p. 167-175, 1999Tradução . . Acesso em: 05 out. 2024.
APA
Bevilacqua, R., Castaño, M. C., Monteiro, L. H. A., & Piqueira, J. R. C. (1999). Estratégias adaptativas em sociedades de formigas. Controle & Automação, 10( 3), 167-175.
NLM
Bevilacqua R, Castaño MC, Monteiro LHA, Piqueira JRC. Estratégias adaptativas em sociedades de formigas. Controle & Automação. 1999 ; 10( 3): 167-175.[citado 2024 out. 05 ]
Vancouver
Bevilacqua R, Castaño MC, Monteiro LHA, Piqueira JRC. Estratégias adaptativas em sociedades de formigas. Controle & Automação. 1999 ; 10( 3): 167-175.[citado 2024 out. 05 ]
Artigo de periodico
Polarization effects on the Raman and photoluminescence spectra of porous silicon layers (1999)
Salcedo, Walter Jaimes ; Ramírez Fernandez, Francisco Javier ; Rubim, Joel Camargo
Source: Journal of Raman Spectroscopy. Unidades: EP, IQ
Assunto: DISPOSITIVOS ELETRÔNICOS
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ABNT
SALCEDO, Walter Jaimes e RAMÍREZ FERNANDEZ, Francisco Javier e RUBIM, Joel Camargo. Polarization effects on the Raman and photoluminescence spectra of porous silicon layers. Journal of Raman Spectroscopy, v. 30, p. 29-36, 1999Tradução . . Disponível em: https://doi.org/10.1002/(sici)1097-4555(199901)30:1%3C29::aid-jrs337%3E3.0.co;2-p. Acesso em: 05 out. 2024.
APA
Salcedo, W. J., Ramírez Fernandez, F. J., & Rubim, J. C. (1999). Polarization effects on the Raman and photoluminescence spectra of porous silicon layers. Journal of Raman Spectroscopy, 30, 29-36. doi:10.1002/(sici)1097-4555(199901)30:1%3C29::aid-jrs337%3E3.0.co;2-p
NLM
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Polarization effects on the Raman and photoluminescence spectra of porous silicon layers [Internet]. Journal of Raman Spectroscopy. 1999 ; 30 29-36.[citado 2024 out. 05 ] Available from: https://doi.org/10.1002/(sici)1097-4555(199901)30:1%3C29::aid-jrs337%3E3.0.co;2-p
Vancouver
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Polarization effects on the Raman and photoluminescence spectra of porous silicon layers [Internet]. Journal of Raman Spectroscopy. 1999 ; 30 29-36.[citado 2024 out. 05 ] Available from: https://doi.org/10.1002/(sici)1097-4555(199901)30:1%3C29::aid-jrs337%3E3.0.co;2-p
Artigo de periodico
Stability of piecewise - deterministic Markov processes (1999)
Dufour, J.; Costa, Oswaldo Luiz do Valle
Source: SIAM Journal of Control Optimization. Unidade: EP
Assunto: CONTROLE (TEORIA DE SISTEMAS E CONTROLE)
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ABNT
DUFOUR, J. e COSTA, Oswaldo Luiz do Valle. Stability of piecewise - deterministic Markov processes. SIAM Journal of Control Optimization, v. 37, n. 5, p. 1483-1502, 1999Tradução . . Disponível em: https://doi.org/10.1109/cdc.1999.827755. Acesso em: 05 out. 2024.
APA
Dufour, J., & Costa, O. L. do V. (1999). Stability of piecewise - deterministic Markov processes. SIAM Journal of Control Optimization, 37( 5), 1483-1502. doi:10.1109/cdc.1999.827755
NLM
Dufour J, Costa OL do V. Stability of piecewise - deterministic Markov processes [Internet]. SIAM Journal of Control Optimization. 1999 ; 37( 5): 1483-1502.[citado 2024 out. 05 ] Available from: https://doi.org/10.1109/cdc.1999.827755
Vancouver
Dufour J, Costa OL do V. Stability of piecewise - deterministic Markov processes [Internet]. SIAM Journal of Control Optimization. 1999 ; 37( 5): 1483-1502.[citado 2024 out. 05 ] Available from: https://doi.org/10.1109/cdc.1999.827755
Artigo de periodico
Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers (1999)
Salcedo, Walter Jaimes ; Ramírez Fernandez, Francisco Javier ; Rubim, Joel Camargo
Source: Brazilian Journal of Physics. Unidades: EP, IQ
Assunto: DISPOSITIVOS ELETRÔNICOS
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ABNT
SALCEDO, Walter Jaimes e RAMÍREZ FERNANDEZ, Francisco Javier e RUBIM, Joel Camargo. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers. Brazilian Journal of Physics, v. 29, n. 4, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400028. Acesso em: 05 out. 2024.
APA
Salcedo, W. J., Ramírez Fernandez, F. J., & Rubim, J. C. (1999). Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers. Brazilian Journal of Physics, 29( 4). doi:10.1590/s0103-97331999000400028
NLM
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4):[citado 2024 out. 05 ] Available from: https://doi.org/10.1590/s0103-97331999000400028
Vancouver
Salcedo WJ, Ramírez Fernandez FJ, Rubim JC. Influence of layer excitation on Raman and photoluminescence spectra and FTIR study of porous silicon layers [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4):[citado 2024 out. 05 ] Available from: https://doi.org/10.1590/s0103-97331999000400028
Artigo de periodico
Non-linaer analysis of the rhythmic activity in rodent brains (1999)
Alvarenga, Milkes Yone; Sameshima, Koichi; Baccalá, Luiz Antonio ; Yang, Hyan Mo
Source: Methematical Biosciences. Unidades: FM, EP
Subjects: BIOCIÊNCIAS, MATEMÁTICA APLICADA, PATOLOGIA
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ABNT
ALVARENGA, Milkes Yone et al. Non-linaer analysis of the rhythmic activity in rodent brains. Methematical Biosciences, v. 157, p. 287-302, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0025-5564(98)10087-1. Acesso em: 05 out. 2024.
APA
Alvarenga, M. Y., Sameshima, K., Baccalá, L. A., & Yang, H. M. (1999). Non-linaer analysis of the rhythmic activity in rodent brains. Methematical Biosciences, 157, 287-302. doi:10.1016/s0025-5564(98)10087-1
NLM
Alvarenga MY, Sameshima K, Baccalá LA, Yang HM. Non-linaer analysis of the rhythmic activity in rodent brains [Internet]. Methematical Biosciences. 1999 ; 157 287-302.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0025-5564(98)10087-1
Vancouver
Alvarenga MY, Sameshima K, Baccalá LA, Yang HM. Non-linaer analysis of the rhythmic activity in rodent brains [Internet]. Methematical Biosciences. 1999 ; 157 287-302.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0025-5564(98)10087-1
Artigo de periodico
Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures (1999)
Bellodi, Marcello; Martino, João Antonio
Source: Electrochemical and Solid State Letters. Unidade: EP
Assunto: ELETROQUÍMICA
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ABNT
BELLODI, Marcello e MARTINO, João Antonio. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures. Electrochemical and Solid State Letters, v. 2, n. 7, p. 345-346, 1999Tradução . . Disponível em: https://doi.org/10.1149/1.1390831. Acesso em: 05 out. 2024.
APA
Bellodi, M., & Martino, J. A. (1999). Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures. Electrochemical and Solid State Letters, 2( 7), 345-346. doi:10.1149/1.1390831
NLM
Bellodi M, Martino JA. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures [Internet]. Electrochemical and Solid State Letters. 1999 ; 2( 7): 345-346.[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/1.1390831
Vancouver
Bellodi M, Martino JA. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures [Internet]. Electrochemical and Solid State Letters. 1999 ; 2( 7): 345-346.[citado 2024 out. 05 ] Available from: https://doi.org/10.1149/1.1390831
Artigo de periodico
Continous-time state-feedback H2-control Markovian jump linear systems via convex analysis (1999)
Costa, Oswaldo Luiz do Valle ; Val, João Bosco Ribeiro do ; Geromel, José Claudio
Source: Automatica. Unidade: EP
Assunto: SISTEMAS DISCRETOS
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ABNT
COSTA, Oswaldo Luiz do Valle e VAL, João Bosco Ribeiro do e GEROMEL, José Claudio. Continous-time state-feedback H2-control Markovian jump linear systems via convex analysis. Automatica, v. 35, n. 2, p. 259-268, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0005-1098(98)00145-9. Acesso em: 05 out. 2024.
APA
Costa, O. L. do V., Val, J. B. R. do, & Geromel, J. C. (1999). Continous-time state-feedback H2-control Markovian jump linear systems via convex analysis. Automatica, 35( 2), 259-268. doi:10.1016/s0005-1098(98)00145-9
NLM
Costa OL do V, Val JBR do, Geromel JC. Continous-time state-feedback H2-control Markovian jump linear systems via convex analysis [Internet]. Automatica. 1999 ; 35( 2): 259-268.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0005-1098(98)00145-9
Vancouver
Costa OL do V, Val JBR do, Geromel JC. Continous-time state-feedback H2-control Markovian jump linear systems via convex analysis [Internet]. Automatica. 1999 ; 35( 2): 259-268.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0005-1098(98)00145-9
Artigo de periodico
A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature (1999)
Sonnenberg, Victor ; Martino, João Antonio
Source: Electrochemical and Solid-State Letters. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters, v. 2, n. 11, p. 585-586, 1999Tradução . . Acesso em: 05 out. 2024.
APA
Sonnenberg, V., & Martino, J. A. (1999). A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters, 2( 11), 585-586.
NLM
Sonnenberg V, Martino JA. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters. 1999 ;2( 11): 585-586.[citado 2024 out. 05 ]
Vancouver
Sonnenberg V, Martino JA. A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature. Electrochemical and Solid-State Letters. 1999 ;2( 11): 585-586.[citado 2024 out. 05 ]
Artigo de periodico
Maximal and stabilizing hermitian solutions for discrete time coupled algebraic Riccati equations (1999)
Costa, Oswaldo Luiz do Valle ; Marques, Ricardo Paulino
Source: Mathematics of Control, Signals, and Systems. Unidade: EP
Assunto: MATEMÁTICA
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ABNT
COSTA, Oswaldo Luiz do Valle e MARQUES, Ricardo Paulino. Maximal and stabilizing hermitian solutions for discrete time coupled algebraic Riccati equations. Mathematics of Control, Signals, and Systems, v. 12, p. 167-195, 1999Tradução . . Disponível em: https://doi.org/10.1007/pl00009849. Acesso em: 05 out. 2024.
APA
Costa, O. L. do V., & Marques, R. P. (1999). Maximal and stabilizing hermitian solutions for discrete time coupled algebraic Riccati equations. Mathematics of Control, Signals, and Systems, 12, 167-195. doi:10.1007/pl00009849
NLM
Costa OL do V, Marques RP. Maximal and stabilizing hermitian solutions for discrete time coupled algebraic Riccati equations [Internet]. Mathematics of Control, Signals, and Systems. 1999 ; 12 167-195.[citado 2024 out. 05 ] Available from: https://doi.org/10.1007/pl00009849
Vancouver
Costa OL do V, Marques RP. Maximal and stabilizing hermitian solutions for discrete time coupled algebraic Riccati equations [Internet]. Mathematics of Control, Signals, and Systems. 1999 ; 12 167-195.[citado 2024 out. 05 ] Available from: https://doi.org/10.1007/pl00009849
Artigo de periodico
Numbering self-replicating polymers (1998)
Monteiro, Luiz Henrique Alves ; Piqueira, José Roberto Castilho
Source: Journal of Theoretical Biology. Unidade: EP
Assunto: POLÍMEROS (MATERIAIS)
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ABNT
MONTEIRO, Luiz Henrique Alves e PIQUEIRA, José Roberto Castilho. Numbering self-replicating polymers. Journal of Theoretical Biology, v. 193, n. 2, p. 365-367, 1998Tradução . . Acesso em: 05 out. 2024.
APA
Monteiro, L. H. A., & Piqueira, J. R. C. (1998). Numbering self-replicating polymers. Journal of Theoretical Biology, 193( 2), 365-367.
NLM
Monteiro LHA, Piqueira JRC. Numbering self-replicating polymers. Journal of Theoretical Biology. 1998 ;193( 2): 365-367.[citado 2024 out. 05 ]
Vancouver
Monteiro LHA, Piqueira JRC. Numbering self-replicating polymers. Journal of Theoretical Biology. 1998 ;193( 2): 365-367.[citado 2024 out. 05 ]
Artigo de periodico
Numbering self-replicating polymers II (1998)
Monteiro, Luiz Henrique Alves ; Piqueira, José Roberto Castilho
Source: Journal of Theoretical Biology. Unidade: EP
Assunto: POLÍMEROS (MATERIAIS)
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ABNT
MONTEIRO, Luiz Henrique Alves e PIQUEIRA, José Roberto Castilho. Numbering self-replicating polymers II. Journal of Theoretical Biology, v. 194, n. 1, p. 159-161, 1998Tradução . . Disponível em: https://doi.org/10.1006/jtbi.1998.0758. Acesso em: 05 out. 2024.
APA
Monteiro, L. H. A., & Piqueira, J. R. C. (1998). Numbering self-replicating polymers II. Journal of Theoretical Biology, 194( 1), 159-161. doi:10.1006/jtbi.1998.0758
NLM
Monteiro LHA, Piqueira JRC. Numbering self-replicating polymers II [Internet]. Journal of Theoretical Biology. 1998 ;194( 1): 159-161.[citado 2024 out. 05 ] Available from: https://doi.org/10.1006/jtbi.1998.0758
Vancouver
Monteiro LHA, Piqueira JRC. Numbering self-replicating polymers II [Internet]. Journal of Theoretical Biology. 1998 ;194( 1): 159-161.[citado 2024 out. 05 ] Available from: https://doi.org/10.1006/jtbi.1998.0758
Artigo de periodico
A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction (1997)
Nicolett, Aparecido Sirley; Martino, João Antonio
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
NICOLETT, Aparecido Sirley e MARTINO, João Antonio. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits, v. 5, n. 1, p. 5-8, 1997Tradução . . Acesso em: 05 out. 2024.
APA
Nicolett, A. S., & Martino, J. A. (1997). A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits, 5( 1), 5-8.
NLM
Nicolett AS, Martino JA. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits. 1997 ;5( 1): 5-8.[citado 2024 out. 05 ]
Vancouver
Nicolett AS, Martino JA. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits. 1997 ;5( 1): 5-8.[citado 2024 out. 05 ]
Artigo de periodico
Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k (1997)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Colinge, Jean-Pierre
Source: Microelectronic Engineering. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k. Microelectronic Engineering, v. 36, n. 1-4, p. 375-378, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(97)00083-x. Acesso em: 05 out. 2024.
APA
Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1997). Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k. Microelectronic Engineering, 36( 1-4), 375-378. doi:10.1016/s0167-9317(97)00083-x
NLM
Pavanello MA, Martino JA, Colinge J-P. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k [Internet]. Microelectronic Engineering. 1997 ; 36( 1-4): 375-378.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0167-9317(97)00083-x
Vancouver
Pavanello MA, Martino JA, Colinge J-P. Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77k [Internet]. Microelectronic Engineering. 1997 ; 36( 1-4): 375-378.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0167-9317(97)00083-x
Artigo de periodico
Mobility degradation influence on the SOI MOSFET channel length extraction at 77K (1996)
Nicolett, Aparecido Sirley; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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ABNT
NICOLETT, Aparecido Sirley et al. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 05 out. 2024.
APA
Nicolett, A. S., Simoen, E., Claeys, C., & Martino, J. A. (1996). Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.
NLM
Nicolett AS, Simoen E, Claeys C, Martino JA. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 out. 05 ]
Vancouver
Nicolett AS, Simoen E, Claeys C, Martino JA. Mobility degradation influence on the SOI MOSFET channel length extraction at 77K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 out. 05 ]
Artigo de periodico
Parameter extraction of MOSFETs operated at low temperature (1996)
Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy e CLAEYS, Cor e MARTINO, João Antonio. Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 05 out. 2024.
APA
Simoen, E., Claeys, C., & Martino, J. A. (1996). Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.
NLM
Simoen E, Claeys C, Martino JA. Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 out. 05 ]
Vancouver
Simoen E, Claeys C, Martino JA. Parameter extraction of MOSFETs operated at low temperature. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 out. 05 ]
Artigo de periodico
Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures (1996)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Colinge, Jean-Pierre
Source: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 05 out. 2024.
APA
Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1996). Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.
NLM
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 out. 05 ]
Vancouver
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental study of the substrate effect on the fully depleted SOI MOSFET at low temperatures. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2024 out. 05 ]

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