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Parte de monografia/livro
Metal-induced crystallization by homogeneous insertion of metallic species in amorphous semiconductors (2015)
Zanatta, Antonio Ricardo; Ferri, Fabio A.
Source: Metal-induced crystallization: fundamentals and applications. Unidade: IFSC
Subjects: SEMICONDUTORES, FILMES FINOS, CRISTALIZAÇÃO
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ABNT
ZANATTA, Antonio Ricardo e FERRI, Fabio A. Metal-induced crystallization by homogeneous insertion of metallic species in amorphous semiconductors. Metal-induced crystallization: fundamentals and applications. Tradução . New York: CRC Press, 2015. . Disponível em: https://doi.org/10.1201/b18032-5. Acesso em: 12 set. 2024.
APA
Zanatta, A. R., & Ferri, F. A. (2015). Metal-induced crystallization by homogeneous insertion of metallic species in amorphous semiconductors. In Metal-induced crystallization: fundamentals and applications. New York: CRC Press. doi:10.1201/b18032-5
NLM
Zanatta AR, Ferri FA. Metal-induced crystallization by homogeneous insertion of metallic species in amorphous semiconductors [Internet]. In: Metal-induced crystallization: fundamentals and applications. New York: CRC Press; 2015. [citado 2024 set. 12 ] Available from: https://doi.org/10.1201/b18032-5
Vancouver
Zanatta AR, Ferri FA. Metal-induced crystallization by homogeneous insertion of metallic species in amorphous semiconductors [Internet]. In: Metal-induced crystallization: fundamentals and applications. New York: CRC Press; 2015. [citado 2024 set. 12 ] Available from: https://doi.org/10.1201/b18032-5
Artigo de periodico
Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases (2014)
Zanatta, Antonio Ricardo; Ingram, D. C.; Kordesch, M. E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NÍQUEL, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, CRISTALIZAÇÃO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 12 set. 2024.
APA
Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589
NLM
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.4896589
Vancouver
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.4896589
Trabalho de evento-resumo
Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films (2013)
Zanatta, Antonio Ricardo; Ingram, D. C.; Kordesch, M. E.
Source: Program. Conference titles: International Conference on the Structure of Non Crystalline Materials - NCM. Unidade: IFSC
Subjects: CRISTALIZAÇÃO, FILMES FINOS, SILICIO
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ABNT
ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. 2013, Anais.. Trento: University of Trento, 2013. . Acesso em: 12 set. 2024.
APA
Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2013). Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. In Program. Trento: University of Trento.
NLM
Zanatta AR, Ingram DC, Kordesch ME. Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. Program. 2013 ;[citado 2024 set. 12 ]
Vancouver
Zanatta AR, Ingram DC, Kordesch ME. Influence of nickel concentration on the metal-induced crystallization of amorphous silicon thin films. Program. 2013 ;[citado 2024 set. 12 ]
Artigo de periodico
Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples (2008)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NÍQUEL, CRISTALIZAÇÃO, ESPECTROSCOPIA RAMAN, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, v. 104, n. 1, p. 013534-1-013534-5, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2955457. Acesso em: 12 set. 2024.
APA
Ferri, F. A., & Zanatta, A. R. (2008). Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples. Journal of Applied Physics, 104( 1), 013534-1-013534-5. doi:10.1063/1.2955457
NLM
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.2955457
Vancouver
Ferri FA, Zanatta AR. Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples [Internet]. Journal of Applied Physics. 2008 ; 104( 1): 013534-1-013534-5.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.2955457
Artigo de periodico
Aluminium-induced nanocrystalline Ge formation at low temperatures (2007)
Muniz, L. R.; Ribeiro, C. T. M.; Zanatta, Antonio Ricardo; Chambouleyron, I.
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Subjects: ALUMÍNIO, TEMPERATURA, ESPECTROSCOPIA RAMAN, CRISTALIZAÇÃO, CRISTALOGRAFIA FÍSICA
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ABNT
MUNIZ, L. R. et al. Aluminium-induced nanocrystalline Ge formation at low temperatures. Journal of Physics: Condensed Matter, v. 19, n. 7, p. 076206-1-076206-16, 2007Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/19/7/076206. Acesso em: 12 set. 2024.
APA
Muniz, L. R., Ribeiro, C. T. M., Zanatta, A. R., & Chambouleyron, I. (2007). Aluminium-induced nanocrystalline Ge formation at low temperatures. Journal of Physics: Condensed Matter, 19( 7), 076206-1-076206-16. doi:10.1088/0953-8984/19/7/076206
NLM
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. Aluminium-induced nanocrystalline Ge formation at low temperatures [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 7): 076206-1-076206-16.[citado 2024 set. 12 ] Available from: https://doi.org/10.1088/0953-8984/19/7/076206
Vancouver
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. Aluminium-induced nanocrystalline Ge formation at low temperatures [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 7): 076206-1-076206-16.[citado 2024 set. 12 ] Available from: https://doi.org/10.1088/0953-8984/19/7/076206
Artigo de periodico
Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films (2007)
Zanatta, Antonio Ricardo; Ferri, Fabio Aparecido
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CRISTALIZAÇÃO, FILMES FINOS, SILICIO, EXPANSÃO DO CALOR
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ABNT
ZANATTA, Antonio Ricardo e FERRI, Fabio Aparecido. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, v. 102, n. 4, p. 043509-1-043509-5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2770823. Acesso em: 12 set. 2024.
APA
Zanatta, A. R., & Ferri, F. A. (2007). Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films. Journal of Applied Physics, 102( 4), 043509-1-043509-5. doi:10.1063/1.2770823
NLM
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.2770823
Vancouver
Zanatta AR, Ferri FA. Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 043509-1-043509-5.[citado 2024 set. 12 ] Available from: https://doi.org/10.1063/1.2770823
Trabalho de evento-anais periodico
Annealing crystallization of a-Ge/Al/Si thin films (2005)
Fajardo, F.; Zanatta, Antonio Ricardo; Chambouleyron, I.
Source: Physica Status Solidi B. Conference titles: Latin American Symposium on Solid State Physics. Unidade: IFSC
Subjects: FILMES FINOS, CRISTALIZAÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FAJARDO, F. e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. Weinheim: Wiley-VCH Verlag GmbH. . Acesso em: 12 set. 2024. , 2005
APA
Fajardo, F., Zanatta, A. R., & Chambouleyron, I. (2005). Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. Weinheim: Wiley-VCH Verlag GmbH.
NLM
Fajardo F, Zanatta AR, Chambouleyron I. Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. 2005 ; 242( 9): 1906-1909.[citado 2024 set. 12 ]
Vancouver
Fajardo F, Zanatta AR, Chambouleyron I. Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. 2005 ; 242( 9): 1906-1909.[citado 2024 set. 12 ]
Trabalho de evento-resumo
The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium (2005)
Muniz, L R; Ribeiro, C. T. M.; Zanatta, Antonio Ricardo; Chambouleyron, I.
Source: Books of Abstracts. Conference titles: International Conference on Amorphous and Nanocrystalline Semiconductors. Unidade: IFSC
Subjects: SEMICONDUTORES, CRISTALIZAÇÃO, ALUMÍNIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MUNIZ, L R et al. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. 2005, Anais.. Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo, 2005. . Acesso em: 12 set. 2024.
APA
Muniz, L. R., Ribeiro, C. T. M., Zanatta, A. R., & Chambouleyron, I. (2005). The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. In Books of Abstracts. Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. Books of Abstracts. 2005 ;[citado 2024 set. 12 ]
Vancouver
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. Books of Abstracts. 2005 ;[citado 2024 set. 12 ]

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