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Artigo de periodico
Business modeling and public policy in high-tech industries: exploratory evidences from two Brazilian semiconductor support programs (2018)
Alves, Alex da Silva; Botelho, Antonio José Junqueira; Duarte, Virgínia
Fonte: International Journal of Innovation and Technology Management. Unidade: ESALQ
Assuntos: POLÍTICAS PÚBLICAS, POLÍTICA TECNOLÓGICA, INOVAÇÕES TECNOLÓGICAS, INDÚSTRIA DE ALTA TECNOLOGIA, SEMICONDUTORES
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ABNT
ALVES, Alex da Silva e BOTELHO, Antonio José Junqueira e DUARTE, Virgínia. Business modeling and public policy in high-tech industries: exploratory evidences from two Brazilian semiconductor support programs. International Journal of Innovation and Technology Management, v. 15, n. 4, p. 1-25, 2018Tradução . . Disponível em: https://doi.org/10.1142/s0219877018500311. Acesso em: 04 set. 2024.
APA
Alves, A. da S., Botelho, A. J. J., & Duarte, V. (2018). Business modeling and public policy in high-tech industries: exploratory evidences from two Brazilian semiconductor support programs. International Journal of Innovation and Technology Management, 15( 4), 1-25. doi:10.1142/s0219877018500311
NLM
Alves A da S, Botelho AJJ, Duarte V. Business modeling and public policy in high-tech industries: exploratory evidences from two Brazilian semiconductor support programs [Internet]. International Journal of Innovation and Technology Management. 2018 ; 15( 4): 1-25.[citado 2024 set. 04 ] Available from: https://doi.org/10.1142/s0219877018500311
Vancouver
Alves A da S, Botelho AJJ, Duarte V. Business modeling and public policy in high-tech industries: exploratory evidences from two Brazilian semiconductor support programs [Internet]. International Journal of Innovation and Technology Management. 2018 ; 15( 4): 1-25.[citado 2024 set. 04 ] Available from: https://doi.org/10.1142/s0219877018500311
Trabalho de evento-resumo
The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons (2016)
Marega Júnior, Euclydes; Sobreira, F. W. A.; Oliveira, E. R. Cardozo; Marques, G. E.; Teodoro, M. D.
Fonte: Scientific Program. Nome do evento: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Assuntos: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
MAREGA JÚNIOR, Euclydes et al. The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons. 2016, Anais.. Singapore: International Union of Pure and Applied Physics - IUPAP, 2016. Disponível em: http://www.icps2016.org/Abstracts/Tu-P.239.pdf. Acesso em: 04 set. 2024.
APA
Marega Júnior, E., Sobreira, F. W. A., Oliveira, E. R. C., Marques, G. E., & Teodoro, M. D. (2016). The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons. In Scientific Program. Singapore: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2016.org/Abstracts/Tu-P.239.pdf
NLM
Marega Júnior E, Sobreira FWA, Oliveira ERC, Marques GE, Teodoro MD. The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons [Internet]. Scientific Program. 2016 ;[citado 2024 set. 04 ] Available from: http://www.icps2016.org/Abstracts/Tu-P.239.pdf
Vancouver
Marega Júnior E, Sobreira FWA, Oliveira ERC, Marques GE, Teodoro MD. The effect of the temperature on the interaction between InAs quantum dot excitons with surface plasmon polaritons [Internet]. Scientific Program. 2016 ;[citado 2024 set. 04 ] Available from: http://www.icps2016.org/Abstracts/Tu-P.239.pdf
Trabalho de evento-resumo
Interaction of surface plasmon polaritons and semiconductor excitons confined in quantum dots (2014)
Sobreira, Fernando de Alencar; Pereira, Rodrigo; Marega Júnior, Euclydes
Fonte: Program. Nome do evento: International Conference on Metamaterials, Photonic Crystals and Plasmonics - META. Unidade: IFSC
Assuntos: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
SOBREIRA, Fernando de Alencar e PEREIRA, Rodrigo e MAREGA JÚNIOR, Euclydes. Interaction of surface plasmon polaritons and semiconductor excitons confined in quantum dots. 2014, Anais.. Singapore: Nanyang Technological University - NTU, 2014. . Acesso em: 04 set. 2024.
APA
Sobreira, F. de A., Pereira, R., & Marega Júnior, E. (2014). Interaction of surface plasmon polaritons and semiconductor excitons confined in quantum dots. In Program. Singapore: Nanyang Technological University - NTU.
NLM
Sobreira F de A, Pereira R, Marega Júnior E. Interaction of surface plasmon polaritons and semiconductor excitons confined in quantum dots. Program. 2014 ;[citado 2024 set. 04 ]
Vancouver
Sobreira F de A, Pereira R, Marega Júnior E. Interaction of surface plasmon polaritons and semiconductor excitons confined in quantum dots. Program. 2014 ;[citado 2024 set. 04 ]
Trabalho de evento-anais periodico
Valley splitting and g-factor in A1As quantum wells (2009)
Duarte, Cesário Antonio; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Fonte: International Journal of Modern Physics B. Nome do evento: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Assuntos: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
DUARTE, Cesário Antonio et al. Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf. Acesso em: 04 set. 2024. , 2009
APA
Duarte, C. A., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
NLM
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Vancouver
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Trabalho de evento-anais periodico
Quantum hall ferromagneti in a double well with vanishing g-factor (2009)
Gomez Armas, Luis Enrique ; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Fonte: International Journal of Modern Physics B. Nome do evento: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Assuntos: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
GOMEZ ARMAS, Luis Enrique et al. Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf. Acesso em: 04 set. 2024. , 2009
APA
Gomez Armas, L. E., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
NLM
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Vancouver
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Trabalho de evento-anais periodico
Magnetoresistance oscillations in double quantum wells under microwave irradiation (2009)
Wiedmann, S; Gusev, Guennadii Michailovich; Raichev, O E; Lamas, T. E.; Bakarov, A K; Portal, J C
Fonte: International Journal of Modern Physics B. Nome do evento: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Assuntos: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
WIEDMANN, S et al. Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf. Acesso em: 04 set. 2024. , 2009
APA
Wiedmann, S., Gusev, G. M., Raichev, O. E., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
NLM
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Vancouver
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Trabalho de evento-anais periodico
Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers (2009)
Diaz, B; Abramof, E; Rappl, P H O; Granado, E; Chitta, Valmir Antonio; Henriques, André Bohomoletz; Oliveira Jr., N. F.
Fonte: International Journal of Modern Physics B. Nome do evento: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Assuntos: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
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ABNT
DIAZ, B et al. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific. . Acesso em: 04 set. 2024. , 2009
APA
Diaz, B., Abramof, E., Rappl, P. H. O., Granado, E., Chitta, V. A., Henriques, A. B., & Oliveira Jr., N. F. (2009). Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific.
NLM
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 set. 04 ]
Vancouver
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 set. 04 ]
Trabalho de evento-anais periodico
Magnetic field induced near-band-gap optical properties in EuTe layers (2009)
Hernandez, F G G; Henriques, André Bohomoletz; Rappl, P H O; Abramof, E
Fonte: International Journal of Modern Physics B. Nome do evento: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Assuntos: SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
HERNANDEZ, F G G et al. Magnetic field induced near-band-gap optical properties in EuTe layers. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf. Acesso em: 04 set. 2024. , 2009
APA
Hernandez, F. G. G., Henriques, A. B., Rappl, P. H. O., & Abramof, E. (2009). Magnetic field induced near-band-gap optical properties in EuTe layers. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
NLM
Hernandez FGG, Henriques AB, Rappl PHO, Abramof E. Magnetic field induced near-band-gap optical properties in EuTe layers [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2999-3003.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
Vancouver
Hernandez FGG, Henriques AB, Rappl PHO, Abramof E. Magnetic field induced near-band-gap optical properties in EuTe layers [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2999-3003.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
Trabalho de evento-anais periodico
Calculation of magnetodonor states in InP and polaron effects (2009)
Alfonso, Alexys Bruno; Hai, Guo Qiang
Fonte: International Journal of Modern Physics B. Nome do evento: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IFSC
Assuntos: SEMICONDUTORES, MAGNETISMO, CAMPO MAGNÉTICO, INTERAÇÕES NUCLEARES, ESPECTROSCOPIA (MEDIÇÃO), ENERGIA
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ABNT
ALFONSO, Alexys Bruno e HAI, Guo Qiang. Calculation of magnetodonor states in InP and polaron effects. International Journal of Modern Physics B. Singapore: World Scientific Publishing. Disponível em: https://doi.org/10.1142/S0217979209062736. Acesso em: 04 set. 2024. , 2009
APA
Alfonso, A. B., & Hai, G. Q. (2009). Calculation of magnetodonor states in InP and polaron effects. International Journal of Modern Physics B. Singapore: World Scientific Publishing. doi:10.1142/S0217979209062736
NLM
Alfonso AB, Hai GQ. Calculation of magnetodonor states in InP and polaron effects [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12/13): 3014-3018.[citado 2024 set. 04 ] Available from: https://doi.org/10.1142/S0217979209062736
Vancouver
Alfonso AB, Hai GQ. Calculation of magnetodonor states in InP and polaron effects [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12/13): 3014-3018.[citado 2024 set. 04 ] Available from: https://doi.org/10.1142/S0217979209062736
Trabalho de evento-anais periodico
Magneto-optical absorption and photomagnetism in Europium chalcogenides (2009)
Henriques, André Bohomoletz; Abramof, E
Fonte: International Journal of Modern Physics B. Nome do evento: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
HENRIQUES, André Bohomoletz e ABRAMOF, E. Magneto-optical absorption and photomagnetism in Europium chalcogenides. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf. Acesso em: 04 set. 2024. , 2009
APA
Henriques, A. B., & Abramof, E. (2009). Magneto-optical absorption and photomagnetism in Europium chalcogenides. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
NLM
Henriques AB, Abramof E. Magneto-optical absorption and photomagnetism in Europium chalcogenides [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2769-2776.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
Vancouver
Henriques AB, Abramof E. Magneto-optical absorption and photomagnetism in Europium chalcogenides [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2769-2776.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
Trabalho de evento-anais periodico
Transport in a bilayer system at high Landau filling factor (2009)
Gusev, G M
Fonte: International Journal of Modern Physics B. Nome do evento: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Assuntos: SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
GUSEV, G M. Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf. Acesso em: 04 set. 2024. , 2009
APA
Gusev, G. M. (2009). Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
NLM
Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
Vancouver
Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.[citado 2024 set. 04 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
Artigo de periodico
Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices (2004)
Pusep, Yuri A.; Ribeiro, M. B.; Arakaki, Haroldo; Souza, C. A. de; Malzer, S.; Dohler, G. H.
Fonte: International Journal of Modern Physics B. Unidade: IFSC
Assunto: SEMICONDUTORES
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ABNT
PUSEP, Yuri A. et al. Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices. International Journal of Modern Physics B, v. No 2004, n. 27/29, p. 3629-3632, 2004Tradução . . Acesso em: 04 set. 2024.
APA
Pusep, Y. A., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Dohler, G. H. (2004). Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices. International Journal of Modern Physics B, No 2004( 27/29), 3629-3632.
NLM
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Dohler GH. Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices. International Journal of Modern Physics B. 2004 ; No 2004( 27/29): 3629-3632.[citado 2024 set. 04 ]
Vancouver
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Dohler GH. Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices. International Journal of Modern Physics B. 2004 ; No 2004( 27/29): 3629-3632.[citado 2024 set. 04 ]
Trabalho de evento
Polaron cyclotron resonance and phonon-assisted harmonics with interface phonons in GaAs/´Al IND.X´´Ga IND.1-X´As quantum wells (1999)
Hai, Guo-Qiang; Peeters, F M; Studart, Nélson; Wang, Y J; McCombe, B D
Nome do evento: International Conference on the Physics of Semiconductors. Unidade: IFSC
Assuntos: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
HAI, Guo-Qiang et al. Polaron cyclotron resonance and phonon-assisted harmonics with interface phonons in GaAs/´Al IND.X´´Ga IND.1-X´As quantum wells. 1999, Anais.. Singapore: World Scientific, 1999. . Acesso em: 04 set. 2024.
APA
Hai, G. -Q., Peeters, F. M., Studart, N., Wang, Y. J., & McCombe, B. D. (1999). Polaron cyclotron resonance and phonon-assisted harmonics with interface phonons in GaAs/´Al IND.X´´Ga IND.1-X´As quantum wells. In . Singapore: World Scientific.
NLM
Hai G-Q, Peeters FM, Studart N, Wang YJ, McCombe BD. Polaron cyclotron resonance and phonon-assisted harmonics with interface phonons in GaAs/´Al IND.X´´Ga IND.1-X´As quantum wells. 1999 ;[citado 2024 set. 04 ]
Vancouver
Hai G-Q, Peeters FM, Studart N, Wang YJ, McCombe BD. Polaron cyclotron resonance and phonon-assisted harmonics with interface phonons in GaAs/´Al IND.X´´Ga IND.1-X´As quantum wells. 1999 ;[citado 2024 set. 04 ]
Parte de monografia/livro
Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields (1997)
Henriques, André Bohomoletz; Gonçalves, L. C. D.; Bindilatti, V.; Oliveira Júnior, Honorato Faustino de; Souza, P. L.; Yavich, B
Fonte: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
HENRIQUES, André Bohomoletz et al. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Tradução . Singapore: World Scientific, 1997. . . Acesso em: 04 set. 2024.
APA
Henriques, A. B., Gonçalves, L. C. D., Bindilatti, V., Oliveira Júnior, H. F. de, Souza, P. L., & Yavich, B. (1997). Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific.
NLM
Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 set. 04 ]
Vancouver
Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 set. 04 ]
Artigo de periodico
New method for studying semiconducting surfaces in air by scanning tunneling microscopy (1997)
Ferlauto, A S; Quivy, A. A.
Fonte: Modern Physics Letters B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
FERLAUTO, A S e QUIVY, A. A. New method for studying semiconducting surfaces in air by scanning tunneling microscopy. Modern Physics Letters B, v. 10, n. 24, p. 1189-1195, 1997Tradução . . Acesso em: 04 set. 2024.
APA
Ferlauto, A. S., & Quivy, A. A. (1997). New method for studying semiconducting surfaces in air by scanning tunneling microscopy. Modern Physics Letters B, 10( 24), 1189-1195.
NLM
Ferlauto AS, Quivy AA. New method for studying semiconducting surfaces in air by scanning tunneling microscopy. Modern Physics Letters B. 1997 ; 10( 24): 1189-1195.[citado 2024 set. 04 ]
Vancouver
Ferlauto AS, Quivy AA. New method for studying semiconducting surfaces in air by scanning tunneling microscopy. Modern Physics Letters B. 1997 ; 10( 24): 1189-1195.[citado 2024 set. 04 ]
Trabalho de evento
X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling (1992)
Fantini, Márcia Carvalho de Abreu ; SANTOS, P. V.; Pereyra, Inés ; Páez Carreño, Marcelo Nelson
Nome do evento: Brazilian School on Semiconductor Physics. Unidades: IF, EP
Assuntos: FÍSICO-QUÍMICA, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
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ABNT
FANTINI, Márcia Carvalho de Abreu et al. X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling. 1992, Anais.. Cingapura: Instituto de Física, Universidade de São Paulo, 1992. . Acesso em: 04 set. 2024.
APA
Fantini, M. C. de A., SANTOS, P. V., Pereyra, I., & Páez Carreño, M. N. (1992). X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling. In . Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Fantini MC de A, SANTOS PV, Pereyra I, Páez Carreño MN. X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling. 1992 ;[citado 2024 set. 04 ]
Vancouver
Fantini MC de A, SANTOS PV, Pereyra I, Páez Carreño MN. X-Ray Reflectivity of Amorphous Multi Layers: Interface Modeling. 1992 ;[citado 2024 set. 04 ]

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