Transport in a bilayer system at high Landau filling factor (2009)
- Autor:
- Autor USP: GOUSSEV, GUENNADII MIKHAILOVITCH - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; CAMPO MAGNÉTICO
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 2009
- Source:
- Título do periódico: International Journal of Modern Physics B
- ISSN: 0217-9792
- Volume/Número/Paginação/Ano: v. 23, n. 12-13, p. 2603-2606, 2009
- Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology
-
ABNT
GUSEV, G M. Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B[S.l: s.n.], 2009.Disponível em: -
APA
Gusev, G. M. (2009). Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf -
NLM
Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf -
Vancouver
Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf - Low field magnetoresistance in a 2D topological insulator based on wide 'HG''TE' quantum well
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