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Artigo de periodico
Evolution from commensurability to size-effects structures in three-dimensional billiards (2004)
Sotomayor, N M; Gusev, Guennadii Michailovich; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA
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SOTOMAYOR, N M e GUSEV, Guennadii Michailovich e LEITE, J. R. Evolution from commensurability to size-effects structures in three-dimensional billiards. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400028. Acesso em: 16 nov. 2024.
APA
Sotomayor, N. M., Gusev, G. M., & Leite, J. R. (2004). Evolution from commensurability to size-effects structures in three-dimensional billiards. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400028
NLM
Sotomayor NM, Gusev GM, Leite JR. Evolution from commensurability to size-effects structures in three-dimensional billiards [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400028
Vancouver
Sotomayor NM, Gusev GM, Leite JR. Evolution from commensurability to size-effects structures in three-dimensional billiards [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400028
Artigo de periodico
First-principles materials study for spintronics: MnAs and MnN (2004)
Paiva, R de; Alves, J L A; Nogueira, R A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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PAIVA, R de et al. First-principles materials study for spintronics: MnAs and MnN. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400008. Acesso em: 16 nov. 2024.
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2004). First-principles materials study for spintronics: MnAs and MnN. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400008
NLM
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First-principles materials study for spintronics: MnAs and MnN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400008
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First-principles materials study for spintronics: MnAs and MnN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400008
Artigo de periodico
Strain-induced shifts of the zone-center phonons of III-nitrides (2004)
Alves, H W Leite; Alves, J L A; Santos, A M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, EFEITO MOSSBAUER
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ALVES, H W Leite et al. Strain-induced shifts of the zone-center phonons of III-nitrides. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400041. Acesso em: 16 nov. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2004). Strain-induced shifts of the zone-center phonons of III-nitrides. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400041
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Strain-induced shifts of the zone-center phonons of III-nitrides [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400041
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Strain-induced shifts of the zone-center phonons of III-nitrides [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400041
Artigo de periodico
Phase separation and ordering in group-III nitride alloys (2004)
Teles, L K; Marques, M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, TERMODINÂMICA
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TELES, L K et al. Phase separation and ordering in group-III nitride alloys. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400014. Acesso em: 16 nov. 2024.
APA
Teles, L. K., Marques, M., Scolfaro, L. M. R., & Leite, J. R. (2004). Phase separation and ordering in group-III nitride alloys. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400014
NLM
Teles LK, Marques M, Scolfaro LMR, Leite JR. Phase separation and ordering in group-III nitride alloys [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400014
Vancouver
Teles LK, Marques M, Scolfaro LMR, Leite JR. Phase separation and ordering in group-III nitride alloys [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400014
Artigo de periodico
Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs (2004)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Poças, L C; Toginho Filho, D O; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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LOURENÇO, S A et al. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000300031. Acesso em: 16 nov. 2024.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Poças, L. C., Toginho Filho, D. O., & Leite, J. R. (2004). Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000300031
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Poças LC, Toginho Filho DO, Leite JR. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000300031
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Poças LC, Toginho Filho DO, Leite JR. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000300031
Artigo de periodico
Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN (2004)
Alves, H W Leite; Alves, J L A; Santos, A M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
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ALVES, H W Leite et al. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400021. Acesso em: 16 nov. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2004). Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400021
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400021
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97332004000400021
Artigo de periodico
Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study (2004)
Paiva, R de; Alves, J L A; Nogueira, R A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA
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ABNT
PAIVA, R de et al. Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study. Brazilian Journal of Physics, 2004Tradução . . Disponível em: http://www.scielo.br/pdf/bjp/v34n2b/a31v342b.pdf. Acesso em: 16 nov. 2024.
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2004). Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study. Brazilian Journal of Physics. Recuperado de http://www.scielo.br/pdf/bjp/v34n2b/a31v342b.pdf
NLM
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: http://www.scielo.br/pdf/bjp/v34n2b/a31v342b.pdf
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 nov. 16 ] Available from: http://www.scielo.br/pdf/bjp/v34n2b/a31v342b.pdf
Trabalho de evento-resumo
Optical properties of cubic GaN and InGaN of different doping levels (2003)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Soares, J A N T; Santos, A M; Noriega, Odille Cue; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Meeting on Applied Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
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FERNANDEZ, J R L et al. Optical properties of cubic GaN and InGaN of different doping levels. 2003, Anais.. Badajoz: APHYS, 2003. . Acesso em: 16 nov. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Soares, J. A. N. T., Santos, A. M., Noriega, O. C., & Leite, J. R. (2003). Optical properties of cubic GaN and InGaN of different doping levels. In Book of Abstracts. Badajoz: APHYS.
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Santos AM, Noriega OC, Leite JR. Optical properties of cubic GaN and InGaN of different doping levels. Book of Abstracts. 2003 ;[citado 2024 nov. 16 ]
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Santos AM, Noriega OC, Leite JR. Optical properties of cubic GaN and InGaN of different doping levels. Book of Abstracts. 2003 ;[citado 2024 nov. 16 ]
Trabalho de evento-resumo
Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image (2003)
Sales, F V de; Silva, S W da; Cruz, J M R; Monte, A F G; Soler, M A G; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Meeting on Applied Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
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ABNT
SALES, F V de et al. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. 2003, Anais.. Badajoz: APHYS, 2003. . Acesso em: 16 nov. 2024.
APA
Sales, F. V. de, Silva, S. W. da, Cruz, J. M. R., Monte, A. F. G., Soler, M. A. G., Morais, P. C., et al. (2003). Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. In Book of Abstracts. Badajoz: APHYS.
NLM
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2024 nov. 16 ]
Vancouver
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2024 nov. 16 ]
Artigo de periodico
Magnetoresistance in a stripe-shaped two-dimensional electron gas (2001)
Bykov, A A; Gusev, Guennadii Michailovich; Leite, J. R.; Moshegov, N T; Bakarov, A K; Toropov, A I; Maude, D K; Portal, J C
Source: Physica B. Unidade: IF
Assunto: FÍSICA
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ABNT
BYKOV, A A et al. Magnetoresistance in a stripe-shaped two-dimensional electron gas. Physica B, v. 298, n. 1-4, p. 79-82, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(01)00264-2. Acesso em: 16 nov. 2024.
APA
Bykov, A. A., Gusev, G. M., Leite, J. R., Moshegov, N. T., Bakarov, A. K., Toropov, A. I., et al. (2001). Magnetoresistance in a stripe-shaped two-dimensional electron gas. Physica B, 298( 1-4), 79-82. doi:10.1016/s0921-4526(01)00264-2
NLM
Bykov AA, Gusev GM, Leite JR, Moshegov NT, Bakarov AK, Toropov AI, Maude DK, Portal JC. Magnetoresistance in a stripe-shaped two-dimensional electron gas [Internet]. Physica B. 2001 ; 298( 1-4): 79-82.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0921-4526(01)00264-2
Vancouver
Bykov AA, Gusev GM, Leite JR, Moshegov NT, Bakarov AK, Toropov AI, Maude DK, Portal JC. Magnetoresistance in a stripe-shaped two-dimensional electron gas [Internet]. Physica B. 2001 ; 298( 1-4): 79-82.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0921-4526(01)00264-2
Artigo de periodico
Influence of Al content on temperature dependence of excitonic transitions in quantum wells (2001)
Lourenco, S A; Dias, I. F. L.; Laureto, E; Duarte, J L; Toguinho Filho, D O; Meneses, E A; Leite, J. R.
Source: European Physical Journal B. Unidade: IF
Assunto: FÍSICA
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ABNT
LOURENCO, S A et al. Influence of Al content on temperature dependence of excitonic transitions in quantum wells. European Physical Journal B, v. 21, n. 1, p. 11-17, 2001Tradução . . Disponível em: http://link.springer.de/link/service/journals/10051/papers/1021001/10210011.pdf. Acesso em: 16 nov. 2024.
APA
Lourenco, S. A., Dias, I. F. L., Laureto, E., Duarte, J. L., Toguinho Filho, D. O., Meneses, E. A., & Leite, J. R. (2001). Influence of Al content on temperature dependence of excitonic transitions in quantum wells. European Physical Journal B, 21( 1), 11-17. Recuperado de http://link.springer.de/link/service/journals/10051/papers/1021001/10210011.pdf
NLM
Lourenco SA, Dias IFL, Laureto E, Duarte JL, Toguinho Filho DO, Meneses EA, Leite JR. Influence of Al content on temperature dependence of excitonic transitions in quantum wells [Internet]. European Physical Journal B. 2001 ; 21( 1): 11-17.[citado 2024 nov. 16 ] Available from: http://link.springer.de/link/service/journals/10051/papers/1021001/10210011.pdf
Vancouver
Lourenco SA, Dias IFL, Laureto E, Duarte JL, Toguinho Filho DO, Meneses EA, Leite JR. Influence of Al content on temperature dependence of excitonic transitions in quantum wells [Internet]. European Physical Journal B. 2001 ; 21( 1): 11-17.[citado 2024 nov. 16 ] Available from: http://link.springer.de/link/service/journals/10051/papers/1021001/10210011.pdf
Artigo de periodico
Magnetooscillations of electrons in nonparabolic confining potential (2000)
Gusev, Guennadii Michailovich; Leite, J. R.; Olshanetskii, E B; Maude, D K; Casse, M; Portal, J C; Moshegov, N T; Toropov, A I
Source: Physica E. Unidade: IF
Assunto: FÍSICA
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ABNT
GUSEV, Guennadii Michailovich et al. Magnetooscillations of electrons in nonparabolic confining potential. Physica E, v. 6, n. 1-4, p. 112-115, 2000Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(99)00067-3. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Leite, J. R., Olshanetskii, E. B., Maude, D. K., Casse, M., Portal, J. C., et al. (2000). Magnetooscillations of electrons in nonparabolic confining potential. Physica E, 6( 1-4), 112-115. doi:10.1016/s1386-9477(99)00067-3
NLM
Gusev GM, Leite JR, Olshanetskii EB, Maude DK, Casse M, Portal JC, Moshegov NT, Toropov AI. Magnetooscillations of electrons in nonparabolic confining potential [Internet]. Physica E. 2000 ; 6( 1-4): 112-115.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s1386-9477(99)00067-3
Vancouver
Gusev GM, Leite JR, Olshanetskii EB, Maude DK, Casse M, Portal JC, Moshegov NT, Toropov AI. Magnetooscillations of electrons in nonparabolic confining potential [Internet]. Physica E. 2000 ; 6( 1-4): 112-115.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s1386-9477(99)00067-3
Artigo de periodico
Hall effect in a spatially fluctuating magnetic field with zero mean (2000)
Bykov, A. A.; Gusev, Guennadii Michailovich; Leite, J. R.; Bakarov, A K; Moshegov, N T; Cassé, M; Maude, D K; Portal, J C
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
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ABNT
BYKOV, A. A. et al. Hall effect in a spatially fluctuating magnetic field with zero mean. Physical Review B, v. 61, n. 8, p. 5505-5510, 2000Tradução . . Disponível em: https://doi.org/10.1103/physrevb.61.5505. Acesso em: 16 nov. 2024.
APA
Bykov, A. A., Gusev, G. M., Leite, J. R., Bakarov, A. K., Moshegov, N. T., Cassé, M., et al. (2000). Hall effect in a spatially fluctuating magnetic field with zero mean. Physical Review B, 61( 8), 5505-5510. doi:10.1103/physrevb.61.5505
NLM
Bykov AA, Gusev GM, Leite JR, Bakarov AK, Moshegov NT, Cassé M, Maude DK, Portal JC. Hall effect in a spatially fluctuating magnetic field with zero mean [Internet]. Physical Review B. 2000 ; 61( 8): 5505-5510.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/physrevb.61.5505
Vancouver
Bykov AA, Gusev GM, Leite JR, Bakarov AK, Moshegov NT, Cassé M, Maude DK, Portal JC. Hall effect in a spatially fluctuating magnetic field with zero mean [Internet]. Physical Review B. 2000 ; 61( 8): 5505-5510.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/physrevb.61.5505
Artigo de periodico
First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys (2000)
Teles, L. K.; Furthmuller, J; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Bechstedt, F
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
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ABNT
TELES, L. K. et al. First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys. Physical Review B, v. 62, n. 4, p. 2475-2485, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000004002475000001&idtype=cvips. Acesso em: 16 nov. 2024.
APA
Teles, L. K., Furthmuller, J., Scolfaro, L. M. R., Leite, J. R., & Bechstedt, F. (2000). First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys. Physical Review B, 62( 4), 2475-2485. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000004002475000001&idtype=cvips
NLM
Teles LK, Furthmuller J, Scolfaro LMR, Leite JR, Bechstedt F. First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys [Internet]. Physical Review B. 2000 ; 62( 4): 2475-2485.[citado 2024 nov. 16 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000004002475000001&idtype=cvips
Vancouver
Teles LK, Furthmuller J, Scolfaro LMR, Leite JR, Bechstedt F. First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys [Internet]. Physical Review B. 2000 ; 62( 4): 2475-2485.[citado 2024 nov. 16 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000004002475000001&idtype=cvips
Artigo de periodico
Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates (2000)
Martini, S.; Quivy, A. A.; Tabata, A; Leite, J. R.
Source: Journal of Vacuum Science & Technology B. Unidade: IF
Subjects: FÍSICA, INTERFACE
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ABNT
MARTINI, S. et al. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, v. 18, n. 4, p. 1991-1996, 2000Tradução . . Disponível em: https://doi.org/10.1116/1.1303851. Acesso em: 16 nov. 2024.
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2000). Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, 18( 4), 1991-1996. doi:10.1116/1.1303851
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1116/1.1303851
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1116/1.1303851
Artigo de periodico
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A ; Silva, M T O; Galzerani, J C; Rodrigues, S C P; Scolfaro, Luisa Maria Ribeiro; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N T; Basmaji, P
Source: Journal of Applied Physics. Unidades: IF, IFSC
Assunto: FÍSICA
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ABNT
PUSEP, Yuri A et al. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 16 nov. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Valence band structure of cubic AlGaN/GaN superlattices (2000)
Rodrigues, S C P; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Sipahi, Guilherme Matos
Source: Applied Physics Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S C P et al. Valence band structure of cubic AlGaN/GaN superlattices. Applied Physics Letters, v. 76, n. 8, p. 1015-1017, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.125924. Acesso em: 16 nov. 2024.
APA
Rodrigues, S. C. P., Scolfaro, L. M. R., Leite, J. R., & Sipahi, G. M. (2000). Valence band structure of cubic AlGaN/GaN superlattices. Applied Physics Letters, 76( 8), 1015-1017. doi:10.1063/1.125924
NLM
Rodrigues SCP, Scolfaro LMR, Leite JR, Sipahi GM. Valence band structure of cubic AlGaN/GaN superlattices [Internet]. Applied Physics Letters. 2000 ; 76( 8): 1015-1017.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.125924
Vancouver
Rodrigues SCP, Scolfaro LMR, Leite JR, Sipahi GM. Valence band structure of cubic AlGaN/GaN superlattices [Internet]. Applied Physics Letters. 2000 ; 76( 8): 1015-1017.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.125924
Artigo de periodico
Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering (2000)
Lemos, V; Silveira, E; Leite, J. R.; Tabata, A; Trentin, R.; Scolfaro, Luisa Maria Ribeiro; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEMOS, V et al. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering. Physical Review Letters, v. 84, n. 16, p. 3666-3669, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips. Acesso em: 16 nov. 2024.
APA
Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Scolfaro, L. M. R., et al. (2000). Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering. Physical Review Letters, 84( 16), 3666-3669. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
NLM
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Scolfaro LMR, Frey T, As DJ, Schikora D, Lischka K. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering [Internet]. Physical Review Letters. 2000 ; 84( 16): 3666-3669.[citado 2024 nov. 16 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
Vancouver
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Scolfaro LMR, Frey T, As DJ, Schikora D, Lischka K. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering [Internet]. Physical Review Letters. 2000 ; 84( 16): 3666-3669.[citado 2024 nov. 16 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
Artigo de periodico
Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers (2000)
Frizzarini, M; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; cavalheiro, A; Leite, J. R.; Meneses, E A
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FRIZZARINI, M et al. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, v. 61, n. 20, p. 13923-13928, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips. Acesso em: 16 nov. 2024.
APA
Frizzarini, M., Silva, E. C. F. da, Quivy, A. A., cavalheiro, A., Leite, J. R., & Meneses, E. A. (2000). Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers. Physical Review B, 61( 20), 13923-13928. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
NLM
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 nov. 16 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
Vancouver
Frizzarini M, Silva ECF da, Quivy AA, cavalheiro A, Leite JR, Meneses EA. Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers [Internet]. Physical Review B. 2000 ; 61( 20): 13923-13928.[citado 2024 nov. 16 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000061000020013923000001&idtype=cvips
Artigo de periodico
Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination (1999)
Santos, A. M. dos; Beliaev, Dmitri; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, A. M. dos et al. Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination. Brazilian Journal of Physics, v. 29, n. 4, p. 775-778, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400034. Acesso em: 16 nov. 2024.
APA
Santos, A. M. dos, Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1999). Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination. Brazilian Journal of Physics, 29( 4), 775-778. doi:10.1590/s0103-97331999000400034
NLM
Santos AM dos, Beliaev D, Scolfaro LMR, Leite JR. Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 775-778.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97331999000400034
Vancouver
Santos AM dos, Beliaev D, Scolfaro LMR, Leite JR. Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 775-778.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1590/s0103-97331999000400034

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