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Artigo de periodico
Anomalous lattice parameter of magnetic semiconductor alloys (2009)
Caetano, Clovis; Marques, Marcelo; Ferreira, Luiz Guimarães; Teles, L. K.
Source: Applied Physics Letters. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
CAETANO, Clovis et al. Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, v. 94, n. 24, p. 241914/1-241914/3. 2009, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3154560. Acesso em: 03 ago. 2024.
APA
Caetano, C., Marques, M., Ferreira, L. G., & Teles, L. K. (2009). Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, 94( 24), 241914/1-241914/3. 2009. doi:10.1063/1.3154560
NLM
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.3154560
Vancouver
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.3154560
Artigo de periodico
Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction (2009)
Diaz, B; Granado, E; Abramof, E; Rappl, P H O; Chitta, Valmir Antonio; Henriques, André Bohomoletz
Source: Applied Physics Letters. Unidade: IF
Subjects: ESPALHAMENTO, DIFRAÇÃO POR RAIOS X
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ABNT
DIAZ, B et al. Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction. Applied Physics Letters, v. 92, n. 24, p. 242511/1-242511/3, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.2945802. Acesso em: 03 ago. 2024.
APA
Diaz, B., Granado, E., Abramof, E., Rappl, P. H. O., Chitta, V. A., & Henriques, A. B. (2009). Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction. Applied Physics Letters, 92( 24), 242511/1-242511/3. doi:10.1063/1.2945802
NLM
Diaz B, Granado E, Abramof E, Rappl PHO, Chitta VA, Henriques AB. Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction [Internet]. Applied Physics Letters. 2009 ; 92( 24): 242511/1-242511/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2945802
Vancouver
Diaz B, Granado E, Abramof E, Rappl PHO, Chitta VA, Henriques AB. Magnetic ordering of EuTe/PbTe multilayers determined by x-ray resonant diffraction [Internet]. Applied Physics Letters. 2009 ; 92( 24): 242511/1-242511/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2945802
Artigo de periodico
Depth-dependent chemical and magnetic local orders in thin magnetic films (2006)
Souza Neto, Narcizo M; Ramos, A Y; Tolentino, H C N; Martins, A; Santos, A. D.
Source: Applied Physics Letters. Unidade: IF
Subjects: ESPECTROSCOPIA DE RAIO X, ESPALHAMENTO
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ABNT
SOUZA NETO, Narcizo M et al. Depth-dependent chemical and magnetic local orders in thin magnetic films. Applied Physics Letters, v. 89, n. 11, p. 111910/1-111910/3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2335782. Acesso em: 03 ago. 2024.
APA
Souza Neto, N. M., Ramos, A. Y., Tolentino, H. C. N., Martins, A., & Santos, A. D. (2006). Depth-dependent chemical and magnetic local orders in thin magnetic films. Applied Physics Letters, 89( 11), 111910/1-111910/3. doi:10.1063/1.2335782
NLM
Souza Neto NM, Ramos AY, Tolentino HCN, Martins A, Santos AD. Depth-dependent chemical and magnetic local orders in thin magnetic films [Internet]. Applied Physics Letters. 2006 ; 89( 11): 111910/1-111910/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2335782
Vancouver
Souza Neto NM, Ramos AY, Tolentino HCN, Martins A, Santos AD. Depth-dependent chemical and magnetic local orders in thin magnetic films [Internet]. Applied Physics Letters. 2006 ; 89( 11): 111910/1-111910/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2335782
Artigo de periodico
High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition (2006)
Szafraniec, J; Tsao, S; Zhang, W; Lim, H; Taguchi, M; Quivy, A. A.; Movaghar, B; Razeghi, M
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS
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ABNT
SZAFRANIEC, J et al. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, v. 88, n. 12, p. 121102/1-121102/3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2188056. Acesso em: 03 ago. 2024.
APA
Szafraniec, J., Tsao, S., Zhang, W., Lim, H., Taguchi, M., Quivy, A. A., et al. (2006). High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition. Applied Physics Letters, 88( 12), 121102/1-121102/3. doi:10.1063/1.2188056
NLM
Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2188056
Vancouver
Szafraniec J, Tsao S, Zhang W, Lim H, Taguchi M, Quivy AA, Movaghar B, Razeghi M. High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition [Internet]. Applied Physics Letters. 2006 ; 88( 12): 121102/1-121102/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2188056
Artigo de periodico
Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN (2006)
Marques, M; Scolfaro, Luisa Maria Ribeiro; Teles, L. K.; Furthmüller, Jurgen; Bechstedt, F; Ferreira, L G
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
MARQUES, M et al. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN. Applied Physics Letters, v. 88, n. 2, p. 022507-1/022507-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2162802. Acesso em: 03 ago. 2024.
APA
Marques, M., Scolfaro, L. M. R., Teles, L. K., Furthmüller, J., Bechstedt, F., & Ferreira, L. G. (2006). Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN. Applied Physics Letters, 88( 2), 022507-1/022507-3. doi:10.1063/1.2162802
NLM
Marques M, Scolfaro LMR, Teles LK, Furthmüller J, Bechstedt F, Ferreira LG. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN [Internet]. Applied Physics Letters. 2006 ; 88( 2): 022507-1/022507-3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2162802
Vancouver
Marques M, Scolfaro LMR, Teles LK, Furthmüller J, Bechstedt F, Ferreira LG. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN [Internet]. Applied Physics Letters. 2006 ; 88( 2): 022507-1/022507-3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2162802
Artigo de periodico
Thermoelectric effect in very thin film Pt/Au thermocouples (2006)
Salvadori, Maria Cecília Barbosa da Silveira; Vaz, A; Teixeira, F S; Cattani, Mauro Sérgio Dorsa ; Brown, I G
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, FILMES FINOS
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ABNT
SALVADORI, Maria Cecília Barbosa da Silveira et al. Thermoelectric effect in very thin film Pt/Au thermocouples. Applied Physics Letters, v. 88, n. 13, p. 133106/1-133106/3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2189192. Acesso em: 03 ago. 2024.
APA
Salvadori, M. C. B. da S., Vaz, A., Teixeira, F. S., Cattani, M. S. D., & Brown, I. G. (2006). Thermoelectric effect in very thin film Pt/Au thermocouples. Applied Physics Letters, 88( 13), 133106/1-133106/3. doi:10.1063/1.2189192
NLM
Salvadori MCB da S, Vaz A, Teixeira FS, Cattani MSD, Brown IG. Thermoelectric effect in very thin film Pt/Au thermocouples [Internet]. Applied Physics Letters. 2006 ; 88( 13): 133106/1-133106/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2189192
Vancouver
Salvadori MCB da S, Vaz A, Teixeira FS, Cattani MSD, Brown IG. Thermoelectric effect in very thin film Pt/Au thermocouples [Internet]. Applied Physics Letters. 2006 ; 88( 13): 133106/1-133106/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2189192
Artigo de periodico
Imaging of domain wall motion in small magnetic particles through near-field microscopy (2006)
Schoenmaker, J; Santos, A. D.; Souche, Y; Seabra, A C; Sampaio, L. C.
Source: Applied Physics Letters. Unidades: IF, EP
Subjects: MATÉRIA CONDENSADA, MAGNETISMO, MICROSCOPIA ELETRÔNICA DE VARREDURA
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ABNT
SCHOENMAKER, J et al. Imaging of domain wall motion in small magnetic particles through near-field microscopy. Applied Physics Letters, v. 88, n. 6, p. 062506, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2172016. Acesso em: 03 ago. 2024.
APA
Schoenmaker, J., Santos, A. D., Souche, Y., Seabra, A. C., & Sampaio, L. C. (2006). Imaging of domain wall motion in small magnetic particles through near-field microscopy. Applied Physics Letters, 88( 6), 062506. doi:10.1063/1.2172016
NLM
Schoenmaker J, Santos AD, Souche Y, Seabra AC, Sampaio LC. Imaging of domain wall motion in small magnetic particles through near-field microscopy [Internet]. Applied Physics Letters. 2006 ; 88( 6): 062506.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2172016
Vancouver
Schoenmaker J, Santos AD, Souche Y, Seabra AC, Sampaio LC. Imaging of domain wall motion in small magnetic particles through near-field microscopy [Internet]. Applied Physics Letters. 2006 ; 88( 6): 062506.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2172016
Artigo de periodico
Role of intrinsic defects in the electronic and optical properties of a-HgI2 (2006)
Ayres, Frederico; Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Applied Physics Letters. Unidades: IF, EP
Subjects: MATÉRIA CONDENSADA, DETETORES, MERCÚRIO (ELEMENTO QUÍMICO), ESTRUTURA ELETRÔNICA
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AYRES, Frederico et al. Role of intrinsic defects in the electronic and optical properties of a-HgI2. Applied Physics Letters, v. 88, n. 1, p. 011918-1/011918-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2159573. Acesso em: 03 ago. 2024.
APA
Ayres, F., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2006). Role of intrinsic defects in the electronic and optical properties of a-HgI2. Applied Physics Letters, 88( 1), 011918-1/011918-3. doi:10.1063/1.2159573
NLM
Ayres F, Assali LVC, Machado WVM, Justo Filho JF. Role of intrinsic defects in the electronic and optical properties of a-HgI2 [Internet]. Applied Physics Letters. 2006 ; 88( 1): 011918-1/011918-3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2159573
Vancouver
Ayres F, Assali LVC, Machado WVM, Justo Filho JF. Role of intrinsic defects in the electronic and optical properties of a-HgI2 [Internet]. Applied Physics Letters. 2006 ; 88( 1): 011918-1/011918-3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2159573
Artigo de periodico
Electrical response of a liquid crystal cell: the role of Debye's layer (2006)
Barbero, Giovanni; Cipparrone, G; Martins, Odair Gimenes; Pagliusi, P; Figueiredo Neto, Antônio Martins
Source: Applied Physics Letters. Unidade: IF
Subjects: CRISTAIS LÍQUIDOS, FLUÍDOS COMPLEXOS
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ABNT
BARBERO, Giovanni et al. Electrical response of a liquid crystal cell: the role of Debye's layer. Applied Physics Letters, v. 89, n. 13, p. 132901, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2357554. Acesso em: 03 ago. 2024.
APA
Barbero, G., Cipparrone, G., Martins, O. G., Pagliusi, P., & Figueiredo Neto, A. M. (2006). Electrical response of a liquid crystal cell: the role of Debye's layer. Applied Physics Letters, 89( 13), 132901. doi:10.1063/1.2357554
NLM
Barbero G, Cipparrone G, Martins OG, Pagliusi P, Figueiredo Neto AM. Electrical response of a liquid crystal cell: the role of Debye's layer [Internet]. Applied Physics Letters. 2006 ; 89( 13): 132901.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2357554
Vancouver
Barbero G, Cipparrone G, Martins OG, Pagliusi P, Figueiredo Neto AM. Electrical response of a liquid crystal cell: the role of Debye's layer [Internet]. Applied Physics Letters. 2006 ; 89( 13): 132901.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2357554
Artigo de periodico
Electric field dependence of the electric conductivity in liquid crystals made of bent-core molecules (2006)
Martins, Odair Gimenes; Barbero, Giovanni; Pedreira, A M; Jákli, A; Sawade, H; Figueiredo Neto, Antônio Martins
Source: Applied Physics Letters. Unidade: IF
Assunto: CRISTAIS LÍQUIDOS
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ABNT
MARTINS, Odair Gimenes et al. Electric field dependence of the electric conductivity in liquid crystals made of bent-core molecules. Applied Physics Letters, v. 88, n. 13, p. 212904/1-212904/3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2206684. Acesso em: 03 ago. 2024.
APA
Martins, O. G., Barbero, G., Pedreira, A. M., Jákli, A., Sawade, H., & Figueiredo Neto, A. M. (2006). Electric field dependence of the electric conductivity in liquid crystals made of bent-core molecules. Applied Physics Letters, 88( 13), 212904/1-212904/3. doi:10.1063/1.2206684
NLM
Martins OG, Barbero G, Pedreira AM, Jákli A, Sawade H, Figueiredo Neto AM. Electric field dependence of the electric conductivity in liquid crystals made of bent-core molecules [Internet]. Applied Physics Letters. 2006 ; 88( 13): 212904/1-212904/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2206684
Vancouver
Martins OG, Barbero G, Pedreira AM, Jákli A, Sawade H, Figueiredo Neto AM. Electric field dependence of the electric conductivity in liquid crystals made of bent-core molecules [Internet]. Applied Physics Letters. 2006 ; 88( 13): 212904/1-212904/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.2206684
Artigo de periodico
Magnetic properties of MnN: influence of strain and crystal structure (2005)
Marques, M; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Furthmüller, J; Bechstedt, F; Ferreira, L G
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO
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ABNT
MARQUES, M et al. Magnetic properties of MnN: influence of strain and crystal structure. Applied Physics Letters, v. 86, n. 16, p. 164105/1-164105/3, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1905787. Acesso em: 03 ago. 2024.
APA
Marques, M., Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., Bechstedt, F., & Ferreira, L. G. (2005). Magnetic properties of MnN: influence of strain and crystal structure. Applied Physics Letters, 86( 16), 164105/1-164105/3. doi:10.1063/1.1905787
NLM
Marques M, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F, Ferreira LG. Magnetic properties of MnN: influence of strain and crystal structure [Internet]. Applied Physics Letters. 2005 ; 86( 16): 164105/1-164105/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1905787
Vancouver
Marques M, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F, Ferreira LG. Magnetic properties of MnN: influence of strain and crystal structure [Internet]. Applied Physics Letters. 2005 ; 86( 16): 164105/1-164105/3.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1905787
Artigo de periodico
Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) (2005)
Miwa, R H; Orellana, W; Fazzio, Adalberto
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
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ABNT
MIWA, R H e ORELLANA, W e FAZZIO, Adalberto. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, v. 86, p. 213111, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1931027. Acesso em: 03 ago. 2024.
APA
Miwa, R. H., Orellana, W., & Fazzio, A. (2005). Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, 86, 213111. doi:10.1063/1.1931027
NLM
Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1931027
Vancouver
Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1931027
Artigo de periodico
Isolated nickel impurities in diamond: a microscopic model for the electrically active centers (2004)
Larico, Rolando; Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Applied Physics Letters. Unidades: IF, EP
Subjects: RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, DIAMANTE
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ABNT
LARICO, Rolando et al. Isolated nickel impurities in diamond: a microscopic model for the electrically active centers. Applied Physics Letters, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1645327. Acesso em: 03 ago. 2024.
APA
Larico, R., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2004). Isolated nickel impurities in diamond: a microscopic model for the electrically active centers. Applied Physics Letters. doi:10.1063/1.1645327
NLM
Larico R, Assali LVC, Machado WVM, Justo Filho JF. Isolated nickel impurities in diamond: a microscopic model for the electrically active centers [Internet]. Applied Physics Letters. 2004 ;[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1645327
Vancouver
Larico R, Assali LVC, Machado WVM, Justo Filho JF. Isolated nickel impurities in diamond: a microscopic model for the electrically active centers [Internet]. Applied Physics Letters. 2004 ;[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1645327
Artigo de periodico
Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers (2004)
Sipahi, Guilherme Matos; Rodrigues, S. C. P.; Scolfaro, Luisa Maria Ribeiro; Lima, I. C. da Cunha
Source: Applied Physics Letters. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, FERROMAGNETISMO, ESTRUTURA ELETRÔNICA
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ABNT
SIPAHI, Guilherme Matos et al. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers. Applied Physics Letters, v. 85, n. 25, p. 6209-6211, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1840121. Acesso em: 03 ago. 2024.
APA
Sipahi, G. M., Rodrigues, S. C. P., Scolfaro, L. M. R., & Lima, I. C. da C. (2004). Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers. Applied Physics Letters, 85( 25), 6209-6211. doi:10.1063/1.1840121
NLM
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6209-6211.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1840121
Vancouver
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6209-6211.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1840121
Artigo de periodico
Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2' (2004)
Scopel, W L; Silva, Antonio Jose Roque da; Orellana, W; Fazzio, Adalberto
Source: Applied Physics Letters. Unidade: IF
Subjects: FILMES FINOS, MATÉRIA CONDENSADA
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ABNT
SCOPEL, W L et al. Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'. Applied Physics Letters, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips. Acesso em: 03 ago. 2024.
APA
Scopel, W. L., Silva, A. J. R. da, Orellana, W., & Fazzio, A. (2004). Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'. Applied Physics Letters. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips
NLM
Scopel WL, Silva AJR da, Orellana W, Fazzio A. Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2' [Internet]. Applied Physics Letters. 2004 ;[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips
Vancouver
Scopel WL, Silva AJR da, Orellana W, Fazzio A. Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2' [Internet]. Applied Physics Letters. 2004 ;[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips
Artigo de periodico
Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions (2004)
Chitta, Valmir Antonio; Coaquira, J A H; Fernandez, J R L; Duarte, C A; Leite, J. R.; Schikora, D; As, D J; Lischka, K; Abramof, E
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, FILMES FINOS, DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA RAMAN
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ABNT
CHITTA, Valmir Antonio et al. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, v. 85, n. 17, p. 3777-3779, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1812590. Acesso em: 03 ago. 2024.
APA
Chitta, V. A., Coaquira, J. A. H., Fernandez, J. R. L., Duarte, C. A., Leite, J. R., Schikora, D., et al. (2004). Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, 85( 17), 3777-3779. doi:10.1063/1.1812590
NLM
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1812590
Vancouver
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1812590
Artigo de periodico
Effective masses and complex dielectric function of cubic "HfO IND.2" (2004)
Garcia, Joelson Cott; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Lino, A T; Freire, V N; Farias, G A; Silva, Junior, E F da
Source: Applied Physics Letters. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GARCIA, Joelson Cott et al. Effective masses and complex dielectric function of cubic "HfO IND.2". Applied Physics Letters, v. 85, n. 21, p. 5022-5024, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000085000021005022000001&idtype=cvips. Acesso em: 03 ago. 2024.
APA
Garcia, J. C., Scolfaro, L. M. R., Leite, J. R., Lino, A. T., Freire, V. N., Farias, G. A., & Silva, J. (2004). Effective masses and complex dielectric function of cubic "HfO IND.2". Applied Physics Letters, 85( 21), 5022-5024. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000085000021005022000001&idtype=cvips
NLM
Garcia JC, Scolfaro LMR, Leite JR, Lino AT, Freire VN, Farias GA, Silva J. Effective masses and complex dielectric function of cubic "HfO IND.2" [Internet]. Applied Physics Letters. 2004 ; 85( 21): 5022-5024.[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000085000021005022000001&idtype=cvips
Vancouver
Garcia JC, Scolfaro LMR, Leite JR, Lino AT, Freire VN, Farias GA, Silva J. Effective masses and complex dielectric function of cubic "HfO IND.2" [Internet]. Applied Physics Letters. 2004 ; 85( 21): 5022-5024.[citado 2024 ago. 03 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000085000021005022000001&idtype=cvips
Artigo de periodico
Erratum: "Isolated nickel impurities in diamond: A microscopic modelfor the electrically active centers" [Appl. Phys. Lett. 84, 720 (2004)] (2004)
Larico, R; Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Applied Physics Letters. Unidades: IF, EP
Subjects: RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, DIAMANTE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LARICO, R et al. Erratum: "Isolated nickel impurities in diamond: A microscopic modelfor the electrically active centers" [Appl. Phys. Lett. 84, 720 (2004)]. Applied Physics Letters, v. 85, n. 25, p. 6993, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1841460. Acesso em: 03 ago. 2024.
APA
Larico, R., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2004). Erratum: "Isolated nickel impurities in diamond: A microscopic modelfor the electrically active centers" [Appl. Phys. Lett. 84, 720 (2004)]. Applied Physics Letters, 85( 25), 6993. doi:10.1063/1.1841460
NLM
Larico R, Assali LVC, Machado WVM, Justo Filho JF. Erratum: "Isolated nickel impurities in diamond: A microscopic modelfor the electrically active centers" [Appl. Phys. Lett. 84, 720 (2004)] [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6993.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1841460
Vancouver
Larico R, Assali LVC, Machado WVM, Justo Filho JF. Erratum: "Isolated nickel impurities in diamond: A microscopic modelfor the electrically active centers" [Appl. Phys. Lett. 84, 720 (2004)] [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6993.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1841460
Artigo de periodico
InAs/GaAs quantum dots optically active at 1.5 'mu' (2003)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T E; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: MATERIAIS, ESTRUTURA DOS MATERIAIS, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, M J da et al. InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, v. 82, n. 16, p. 2646-2648, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1569053. Acesso em: 03 ago. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2003). InAs/GaAs quantum dots optically active at 1.5 'mu'. Applied Physics Letters, 82( 16), 2646-2648. doi:10.1063/1.1569053
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1569053
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. InAs/GaAs quantum dots optically active at 1.5 'mu' [Internet]. Applied Physics Letters. 2003 ; 82( 16): 2646-2648.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1569053
Artigo de periodico
Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function (2003)
Marques, M; Teles, L. K.; Anjos, V; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Freire, V N; Farias, G A; Silva Junior, E F da
Source: Applied Physics Letters. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FILMES FINOS, ÓPTICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARQUES, M et al. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function. Applied Physics Letters, v. 82, n. 18, p. 3074-3076, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1570922. Acesso em: 03 ago. 2024.
APA
Marques, M., Teles, L. K., Anjos, V., Scolfaro, L. M. R., Leite, J. R., Freire, V. N., et al. (2003). Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function. Applied Physics Letters, 82( 18), 3074-3076. doi:10.1063/1.1570922
NLM
Marques M, Teles LK, Anjos V, Scolfaro LMR, Leite JR, Freire VN, Farias GA, Silva Junior EF da. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function [Internet]. Applied Physics Letters. 2003 ; 82( 18): 3074-3076.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1570922
Vancouver
Marques M, Teles LK, Anjos V, Scolfaro LMR, Leite JR, Freire VN, Farias GA, Silva Junior EF da. Full-relativistic calculations of the 'SrTiO IND.3' carrier effective masses and complex dieletric function [Internet]. Applied Physics Letters. 2003 ; 82( 18): 3074-3076.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1063/1.1570922

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