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Artigo de periodico
Diamond turning of small Fresnel lens array in single crystal InSb (2013)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Cirino, Giuseppe Antonio; Pizani, Paulo Sergio
Source: Journal of Micromechanics and Microengineering. Unidade: EESC
Subjects: DIAMANTE, FERRAMENTAS, ESPECTROSCOPIA RAMAN, MICROSCOPIA ELETRÔNICA DE VARREDURA
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ABNT
JASINEVICIUS, Renato Goulart et al. Diamond turning of small Fresnel lens array in single crystal InSb. Journal of Micromechanics and Microengineering, v. 23, n. 5, p. 055025(1-12), 2013Tradução . . Disponível em: https://doi.org/10.1088/0960-1317/23/5/055025. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Cirino, G. A., & Pizani, P. S. (2013). Diamond turning of small Fresnel lens array in single crystal InSb. Journal of Micromechanics and Microengineering, 23( 5), 055025(1-12). doi:10.1088/0960-1317/23/5/055025
NLM
Jasinevicius RG, Duduch JG, Cirino GA, Pizani PS. Diamond turning of small Fresnel lens array in single crystal InSb [Internet]. Journal of Micromechanics and Microengineering. 2013 ; 23( 5): 055025(1-12).[citado 2024 jul. 04 ] Available from: https://doi.org/10.1088/0960-1317/23/5/055025
Vancouver
Jasinevicius RG, Duduch JG, Cirino GA, Pizani PS. Diamond turning of small Fresnel lens array in single crystal InSb [Internet]. Journal of Micromechanics and Microengineering. 2013 ; 23( 5): 055025(1-12).[citado 2024 jul. 04 ] Available from: https://doi.org/10.1088/0960-1317/23/5/055025
Artigo de periodico
Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer (2013)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Materials Letters. Unidade: EESC
Subjects: MUDANÇA DE FASE, SILÍCIO, USINAGEM
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer. Materials Letters, v. 94, n. 1, p. 201-205, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.matlet.2012.12.060. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2013). Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer. Materials Letters, 94( 1), 201-205. doi:10.1016/j.matlet.2012.12.060
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer [Internet]. Materials Letters. 2013 ; 94( 1): 201-205.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1016/j.matlet.2012.12.060
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Evidence of crystallographic orientation dependence upon cyclic microindentation-induced recrystallization within amorphous surface layer [Internet]. Materials Letters. 2013 ; 94( 1): 201-205.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1016/j.matlet.2012.12.060
Trabalho de evento
Analysis of Zerodur® machinability using single point diamond turning (2013)
Otoboni, José Antonio; Duduch, Jaime Gilberto; Jasinevicius, Renato Goulart; Gonçalves, André da Motta; Sagawa, Juliana Keiko; Javarez Junior, Laercio
Source: Anais. Conference titles: International Congress of Mechanical Engineering - COBEM. Unidade: EESC
Subjects: USINAGEM, MATERIAIS CERÂMICOS
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ABNT
OTOBONI, José Antonio et al. Analysis of Zerodur® machinability using single point diamond turning. 2013, Anais.. Rio de Janeiro: ABCM, 2013. Disponível em: http://abcm.org.br/anais/cobem/2013/PDF/2187.pdf. Acesso em: 04 jul. 2024.
APA
Otoboni, J. A., Duduch, J. G., Jasinevicius, R. G., Gonçalves, A. da M., Sagawa, J. K., & Javarez Junior, L. (2013). Analysis of Zerodur® machinability using single point diamond turning. In Anais. Rio de Janeiro: ABCM. Recuperado de http://abcm.org.br/anais/cobem/2013/PDF/2187.pdf
NLM
Otoboni JA, Duduch JG, Jasinevicius RG, Gonçalves A da M, Sagawa JK, Javarez Junior L. Analysis of Zerodur® machinability using single point diamond turning [Internet]. Anais. 2013 ;[citado 2024 jul. 04 ] Available from: http://abcm.org.br/anais/cobem/2013/PDF/2187.pdf
Vancouver
Otoboni JA, Duduch JG, Jasinevicius RG, Gonçalves A da M, Sagawa JK, Javarez Junior L. Analysis of Zerodur® machinability using single point diamond turning [Internet]. Anais. 2013 ;[citado 2024 jul. 04 ] Available from: http://abcm.org.br/anais/cobem/2013/PDF/2187.pdf
Artigo de periodico
Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon (2012)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Montanari, Luciana; Pizani, Paulo Sérgio
Source: Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. Unidade: EESC
Subjects: TORNEAMENTO, DIAMANTE, MUDANÇA DE FASE, CRISTALOGRAFIA
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ABNT
JASINEVICIUS, Renato Goulart et al. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, v. 226, n. 3, p. 445-458, 2012Tradução . . Disponível em: https://doi.org/10.1177/0954405411421108. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Montanari, L., & Pizani, P. S. (2012). Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, 226( 3), 445-458. doi:10.1177/0954405411421108
NLM
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2012 ; 226( 3): 445-458.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1177/0954405411421108
Vancouver
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2012 ; 226( 3): 445-458.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1177/0954405411421108
Trabalho de evento
Diamond turning of novel materials (2011)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Porto, Arthur José Vieira; Pizani, Paulo Sérgio
Source: Conference Proceedings. Conference titles: euspen International Conference. Unidade: EESC
Subjects: DIAMANTE, NANOTECNOLOGIA
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ABNT
JASINEVICIUS, Renato Goulart et al. Diamond turning of novel materials. 2011, Anais.. Deft: euspen, 2011. Disponível em: http://www.euspen.eu/default.asp?langid=1&contentid=1451. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Porto, A. J. V., & Pizani, P. S. (2011). Diamond turning of novel materials. In Conference Proceedings. Deft: euspen. Recuperado de http://www.euspen.eu/default.asp?langid=1&contentid=1451
NLM
Jasinevicius RG, Duduch JG, Porto AJV, Pizani PS. Diamond turning of novel materials [Internet]. Conference Proceedings. 2011 ;[citado 2024 jul. 04 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Vancouver
Jasinevicius RG, Duduch JG, Porto AJV, Pizani PS. Diamond turning of novel materials [Internet]. Conference Proceedings. 2011 ;[citado 2024 jul. 04 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Trabalho de evento
On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning (2011)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Conference Proceedings. Conference titles: euspen International Conference. Unidade: EESC
Subjects: DIAMANTE, SEMICONDUTORES
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ABNT
JASINEVICIUS, Renato Goulart et al. On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning. 2011, Anais.. Deft: euspen, 2011. Disponível em: http://www.euspen.eu/default.asp?langid=1&contentid=1451. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Duduch, J. G., & Pizani, P. S. (2011). On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning. In Conference Proceedings. Deft: euspen. Recuperado de http://www.euspen.eu/default.asp?langid=1&contentid=1451
NLM
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS. On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning [Internet]. Conference Proceedings. 2011 ;[citado 2024 jul. 04 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Vancouver
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS. On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning [Internet]. Conference Proceedings. 2011 ;[citado 2024 jul. 04 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Trabalho de evento
The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal (2009)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Proceedings. Conference titles: ASPE Annual Meeting. Unidade: EESC
Subjects: TENSÃO RESIDUAL, DIAMANTE, DUCTILIDADE, SILÍCIO
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal. 2009, Anais.. Monterey: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2009. . Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2009). The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal. In Proceedings. Monterey: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Jasinevicius RG, Duduch JG, Pizani PS. The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal. Proceedings. 2009 ;[citado 2024 jul. 04 ]
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. The crystallographic direction influence on the brittle to ductile transition in diamond turning of silicon crystal. Proceedings. 2009 ;[citado 2024 jul. 04 ]
Artigo de periodico
The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation (2008)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Materials Letters. Unidade: EESC
Assunto: ESTRUTURA DOS SÓLIDOS
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation. Materials Letters, v. 62, n. 6-7, p. 812-815, 2008Tradução . . Disponível em: https://doi.org/10.1016/j.matlet.2007.06.071. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2008). The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation. Materials Letters, 62( 6-7), 812-815. doi:10.1016/j.matlet.2007.06.071
NLM
Jasinevicius RG, Duduch JG, Pizani PS. The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation [Internet]. Materials Letters. 2008 ; 62( 6-7): 812-815.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1016/j.matlet.2007.06.071
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. The influence of crystallographic orientation on the generation of multiple structural phases generation in silicon by cyclic microindentation [Internet]. Materials Letters. 2008 ; 62( 6-7): 812-815.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1016/j.matlet.2007.06.071
Artigo de periodico
Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon (2008)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Montanari, Luciana; Pizani, Paulo Sérgio
Source: Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. Unidade: EESC
Subjects: MUDANÇA DE FASE, ESPECTROSCOPIA RAMAN
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ABNT
JASINEVICIUS, Renato Goulart et al. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, v. 222, n. 9, p. 1065-1073, 2008Tradução . . Disponível em: https://doi.org/10.1243/09544054JEM1161. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Montanari, L., & Pizani, P. S. (2008). Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, 222( 9), 1065-1073. doi:10.1243/09544054JEM1161
NLM
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2008 ; 222( 9): 1065-1073.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1243/09544054JEM1161
Vancouver
Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2008 ; 222( 9): 1065-1073.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1243/09544054JEM1161
Artigo de periodico
Structure evaluation of submicrometre silicon chips removed by diamond turning (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Semiconductor Science and Technology. Unidade: EESC
Subjects: SEMICONDUTORES, MICROSCÓPIO ELETRÔNICO, DIAMANTE
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, v. 22, n. 5, p. 561-573, 2007Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/22/5/019. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, 22( 5), 561-573. doi:10.1088/0268-1242/22/5/019
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Parte de monografia/livro
Ductile machining and high pressure phase transformations of semiconductor crystals (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Semiconductor machining at the micro-nano scale. Unidade: EESC
Subjects: USINAGEM, FERRAMENTAS
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Ductile machining and high pressure phase transformations of semiconductor crystals. Semiconductor machining at the micro-nano scale. Tradução . Kerala: Transworld Research Network, 2007. . . Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). Ductile machining and high pressure phase transformations of semiconductor crystals. In Semiconductor machining at the micro-nano scale. Kerala: Transworld Research Network.
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Ductile machining and high pressure phase transformations of semiconductor crystals. In: Semiconductor machining at the micro-nano scale. Kerala: Transworld Research Network; 2007. [citado 2024 jul. 04 ]
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Ductile machining and high pressure phase transformations of semiconductor crystals. In: Semiconductor machining at the micro-nano scale. Kerala: Transworld Research Network; 2007. [citado 2024 jul. 04 ]
Artigo de periodico
In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Journal of the Brazilian Society of Mechanical Science and Engineering. Unidade: EESC
Subjects: ESPECTROSCOPIA RAMAN, RECOZIMENTO
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal. Journal of the Brazilian Society of Mechanical Science and Engineering, v. 29, n. Ja/Mar. 2007, p. 49-54, 2007Tradução . . Disponível em: https://doi.org/10.1590/s1678-58782007000100008. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal. Journal of the Brazilian Society of Mechanical Science and Engineering, 29( Ja/Mar. 2007), 49-54. doi:10.1590/s1678-58782007000100008
NLM
Jasinevicius RG, Duduch JG, Pizani PS. In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal [Internet]. Journal of the Brazilian Society of Mechanical Science and Engineering. 2007 ; 29( Ja/Mar. 2007): 49-54.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1590/s1678-58782007000100008
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal [Internet]. Journal of the Brazilian Society of Mechanical Science and Engineering. 2007 ; 29( Ja/Mar. 2007): 49-54.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1590/s1678-58782007000100008
Artigo de periodico
Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy (2005)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Pizani, Paulo Sérgio; Duduch, Jaime Gilberto; Santos, Francisco José
Source: Materials Research. Unidade: EESC
Subjects: SEMICONDUTORES, MUDANÇA DE FASE, DUCTILIDADE
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ABNT
JASINEVICIUS, Renato Goulart et al. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy. Materials Research, v. 8, n. 3, p. 261-268, 2005Tradução . . Disponível em: https://doi.org/10.1590/s1516-14392005000300007. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Pizani, P. S., Duduch, J. G., & Santos, F. J. (2005). Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy. Materials Research, 8( 3), 261-268. doi:10.1590/s1516-14392005000300007
NLM
Jasinevicius RG, Porto AJV, Pizani PS, Duduch JG, Santos FJ. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy [Internet]. Materials Research. 2005 ; 8( 3): 261-268.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1590/s1516-14392005000300007
Vancouver
Jasinevicius RG, Porto AJV, Pizani PS, Duduch JG, Santos FJ. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy [Internet]. Materials Research. 2005 ; 8( 3): 261-268.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1590/s1516-14392005000300007
Artigo de periodico
Multiple phase silicon in submicrometer chips removed by diamond turning (2005)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio; Lanciotti Junior, Francesco; Santos, Francisco José dos
Source: Journal of the Brazilian Society of Mechanical Sciences and Engineering. Unidade: EESC
Subjects: MUDANÇA DE FASE, ESPECTROSCOPIA RAMAN
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ABNT
JASINEVICIUS, Renato Goulart et al. Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, v. 27, n. 4, p. 440-448, 2005Tradução . . Disponível em: https://doi.org/10.1590/s1678-58782005000400013. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Duduch, J. G., Pizani, P. S., Lanciotti Junior, F., & Santos, F. J. dos. (2005). Multiple phase silicon in submicrometer chips removed by diamond turning. Journal of the Brazilian Society of Mechanical Sciences and Engineering, 27( 4), 440-448. doi:10.1590/s1678-58782005000400013
NLM
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1590/s1678-58782005000400013
Vancouver
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS, Lanciotti Junior F, Santos FJ dos. Multiple phase silicon in submicrometer chips removed by diamond turning [Internet]. Journal of the Brazilian Society of Mechanical Sciences and Engineering. 2005 ; 27( 4): 440-448.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1590/s1678-58782005000400013
Trabalho de evento
Surface integrity evaluation of diamond turned single crystal silicon component (2004)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Lanciotti Junior, Francesco; Pizani, Paulo Sérgio
Source: Proceedings of the euspen. Conference titles: International Conference of the European Society for Precision Engineering and Nanotechnology. Unidade: EESC
Assunto: ESPECTROSCOPIA RAMAN
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ABNT
JASINEVICIUS, Renato Goulart et al. Surface integrity evaluation of diamond turned single crystal silicon component. 2004, Anais.. Glasgow: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2004. . Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Lanciotti Junior, F., & Pizani, P. S. (2004). Surface integrity evaluation of diamond turned single crystal silicon component. In Proceedings of the euspen. Glasgow: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Jasinevicius RG, Duduch JG, Lanciotti Junior F, Pizani PS. Surface integrity evaluation of diamond turned single crystal silicon component. Proceedings of the euspen. 2004 ;[citado 2024 jul. 04 ]
Vancouver
Jasinevicius RG, Duduch JG, Lanciotti Junior F, Pizani PS. Surface integrity evaluation of diamond turned single crystal silicon component. Proceedings of the euspen. 2004 ;[citado 2024 jul. 04 ]
Trabalho de evento
Relação entre a transformação de fase e a deformação plástica em silício estudada através de microindentação e espectroscopia Raman (2001)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pagotto, Carlos Renato; Pizani, P. S.
Conference titles: Congresso Brasileiro de Engenharia de Fabricação. Unidade: EESC
Subjects: FERRAMENTAS, MUDANÇA DE FASE, ENGENHARIA MECÂNICA
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ABNT
JASINEVICIUS, Renato Goulart et al. Relação entre a transformação de fase e a deformação plástica em silício estudada através de microindentação e espectroscopia Raman. 2001, Anais.. Curitiba: ABCM, 2001. . Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., Pagotto, C. R., & Pizani, P. S. (2001). Relação entre a transformação de fase e a deformação plástica em silício estudada através de microindentação e espectroscopia Raman. In . Curitiba: ABCM.
NLM
Jasinevicius RG, Duduch JG, Pagotto CR, Pizani PS. Relação entre a transformação de fase e a deformação plástica em silício estudada através de microindentação e espectroscopia Raman. 2001 ;[citado 2024 jul. 04 ]
Vancouver
Jasinevicius RG, Duduch JG, Pagotto CR, Pizani PS. Relação entre a transformação de fase e a deformação plástica em silício estudada através de microindentação e espectroscopia Raman. 2001 ;[citado 2024 jul. 04 ]
Artigo de periodico
Brittle to ductile transition dependence upon the transition pressure value of semiconductors in micromachining (2000)
Jasinevicius, Renato Goulart; Pizani, Paulo S; Duduch, Jaime Gilberto
Source: Journal of Materials Research. Unidade: EESC
Subjects: FERRAMENTAS, ENGENHARIA MECÂNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo S e DUDUCH, Jaime Gilberto. Brittle to ductile transition dependence upon the transition pressure value of semiconductors in micromachining. Journal of Materials Research, v. 15, n. 8, p. 1688-1692, 2000Tradução . . Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Pizani, P. S., & Duduch, J. G. (2000). Brittle to ductile transition dependence upon the transition pressure value of semiconductors in micromachining. Journal of Materials Research, 15( 8), 1688-1692.
NLM
Jasinevicius RG, Pizani PS, Duduch JG. Brittle to ductile transition dependence upon the transition pressure value of semiconductors in micromachining. Journal of Materials Research. 2000 ; 15( 8): 1688-1692.[citado 2024 jul. 04 ]
Vancouver
Jasinevicius RG, Pizani PS, Duduch JG. Brittle to ductile transition dependence upon the transition pressure value of semiconductors in micromachining. Journal of Materials Research. 2000 ; 15( 8): 1688-1692.[citado 2024 jul. 04 ]
Artigo de periodico
Raman characterization of structural disorder and residual strains in micromachined 'GA''AS' (2000)
Pizani, P S; Lanciotti Jr., F; Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Porto, Arthur José Vieira
Source: Journal of Applied Physics. Unidade: EESC
Assunto: MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PIZANI, P S et al. Raman characterization of structural disorder and residual strains in micromachined 'GA''AS'. Journal of Applied Physics, v. 87, n. 3, p. 1280-1283, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372009. Acesso em: 04 jul. 2024.
APA
Pizani, P. S., Lanciotti Jr., F., Jasinevicius, R. G., Duduch, J. G., & Porto, A. J. V. (2000). Raman characterization of structural disorder and residual strains in micromachined 'GA''AS'. Journal of Applied Physics, 87( 3), 1280-1283. doi:10.1063/1.372009
NLM
Pizani PS, Lanciotti Jr. F, Jasinevicius RG, Duduch JG, Porto AJV. Raman characterization of structural disorder and residual strains in micromachined 'GA''AS' [Internet]. Journal of Applied Physics. 2000 ; 87( 3): 1280-1283.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1063/1.372009
Vancouver
Pizani PS, Lanciotti Jr. F, Jasinevicius RG, Duduch JG, Porto AJV. Raman characterization of structural disorder and residual strains in micromachined 'GA''AS' [Internet]. Journal of Applied Physics. 2000 ; 87( 3): 1280-1283.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1063/1.372009
Artigo de periodico
Surface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopy (2000)
Jasinevicius, Renato Gerard; Santos, Francisco José dos; Pizani, Paulo Sergio; Duduch, Jaime Gilberto; Porto, Arthur José Vieira
Source: Journal of Non-Crystalline Solids. Unidade: EESC
Subjects: MICROSCOPIA ELETRÔNICA, USINAGEM, FERRAMENTAS, ENGENHARIA MECÂNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Gerard et al. Surface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopy. Journal of Non-Crystalline Solids, v. 272, n. 2-3, p. 174-178, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0022-3093(00)00236-2. Acesso em: 04 jul. 2024.
APA
Jasinevicius, R. G., Santos, F. J. dos, Pizani, P. S., Duduch, J. G., & Porto, A. J. V. (2000). Surface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopy. Journal of Non-Crystalline Solids, 272( 2-3), 174-178. doi:10.1016/s0022-3093(00)00236-2
NLM
Jasinevicius RG, Santos FJ dos, Pizani PS, Duduch JG, Porto AJV. Surface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopy [Internet]. Journal of Non-Crystalline Solids. 2000 ; 272( 2-3): 174-178.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1016/s0022-3093(00)00236-2
Vancouver
Jasinevicius RG, Santos FJ dos, Pizani PS, Duduch JG, Porto AJV. Surface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopy [Internet]. Journal of Non-Crystalline Solids. 2000 ; 272( 2-3): 174-178.[citado 2024 jul. 04 ] Available from: https://doi.org/10.1016/s0022-3093(00)00236-2
Artigo de periodico
Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering (1999)
Pizani, P. S.; Jasinevicius, R.; Duduch, Jaime Gilberto; Porto, Arthur José Vieira
Source: Journal of Materials Science Letters. Unidade: EESC
Subjects: ENGENHARIA MECÂNICA, FERRAMENTAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PIZANI, P. S. et al. Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering. Journal of Materials Science Letters, v. 18, p. 1185-1187, 1999Tradução . . Acesso em: 04 jul. 2024.
APA
Pizani, P. S., Jasinevicius, R., Duduch, J. G., & Porto, A. J. V. (1999). Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering. Journal of Materials Science Letters, 18, 1185-1187.
NLM
Pizani PS, Jasinevicius R, Duduch JG, Porto AJV. Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering. Journal of Materials Science Letters. 1999 ; 18 1185-1187.[citado 2024 jul. 04 ]
Vancouver
Pizani PS, Jasinevicius R, Duduch JG, Porto AJV. Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering. Journal of Materials Science Letters. 1999 ; 18 1185-1187.[citado 2024 jul. 04 ]

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