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Trabalho de evento-resumo
Charge transfer between percolation levels in a system with an artificial , strongly disordered potential (1994)
Gusev, G M; Gennser, U; Maude, D K; Portal, J C; Lubyshev, D I; Nastaushev, Y V; Rossi, J C; Basmaji, Pierre
Source: Program and Abstracts. Conference titles: International Conference on Superlattices Microstructures and Microdevices - ICSMM. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
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ABNT
GUSEV, G M et al. Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. 1994, Anais.. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 04 nov. 2024.
APA
Gusev, G. M., Gennser, U., Maude, D. K., Portal, J. C., Lubyshev, D. I., Nastaushev, Y. V., et al. (1994). Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. In Program and Abstracts. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Rossi JC, Basmaji P. Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. Program and Abstracts. 1994 ;[citado 2024 nov. 04 ]
Vancouver
Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Rossi JC, Basmaji P. Charge transfer between percolation levels in a system with an artificial , strongly disordered potential. Program and Abstracts. 1994 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Effect of alloy disorder and structural defects on exciton properties in lattice-matched (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells (1994)
Guimarães, Francisco Eduardo Gontijo ; Lubyshev, D I; Chitta, V A; Basmaji, Pierre
Conference titles: International Conference on Superlattices Microstructures and Microdevices - ICSMM. Unidade: IFSC
Subjects: CIRCUITOS ELETRÔNICOS, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Effect of alloy disorder and structural defects on exciton properties in lattice-matched (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells. 1994, Anais.. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 04 nov. 2024.
APA
Guimarães, F. E. G., Lubyshev, D. I., Chitta, V. A., & Basmaji, P. (1994). Effect of alloy disorder and structural defects on exciton properties in lattice-matched (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells. In . Alberta: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Guimarães FEG, Lubyshev DI, Chitta VA, Basmaji P. Effect of alloy disorder and structural defects on exciton properties in lattice-matched (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells. 1994 ;[citado 2024 nov. 04 ]
Vancouver
Guimarães FEG, Lubyshev DI, Chitta VA, Basmaji P. Effect of alloy disorder and structural defects on exciton properties in lattice-matched (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' quantum wells. 1994 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI' (1994)
Silva, S W; Pizani, P S; Rossi, J C; Galzerani, J C; Mlayah, A; Carles, R; Lubyshev, D I; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, S W et al. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. 1994, Anais.. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 04 nov. 2024.
APA
Silva, S. W., Pizani, P. S., Rossi, J. C., Galzerani, J. C., Mlayah, A., Carles, R., et al. (1994). Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. In Abstracts. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Silva SW, Pizani PS, Rossi JC, Galzerani JC, Mlayah A, Carles R, Lubyshev DI, Basmaji P. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. Abstracts. 1994 ;[citado 2024 nov. 04 ]
Vancouver
Silva SW, Pizani PS, Rossi JC, Galzerani JC, Mlayah A, Carles R, Lubyshev DI, Basmaji P. Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'. Abstracts. 1994 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Evidence of localized luminescence centers in porous silicon (1994)
Basmaji, Pierre; Matvienko, B; Guimarães, Francisco Eduardo Gontijo
Source: Program and Abstracts. Conference titles: International Conference on Superlattices Microstructures and Microdevices - ICSMM. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre e MATVIENKO, B e GUIMARÃES, Francisco Eduardo Gontijo. Evidence of localized luminescence centers in porous silicon. 1994, Anais.. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 04 nov. 2024.
APA
Basmaji, P., Matvienko, B., & Guimarães, F. E. G. (1994). Evidence of localized luminescence centers in porous silicon. In Program and Abstracts. Alberta: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Basmaji P, Matvienko B, Guimarães FEG. Evidence of localized luminescence centers in porous silicon. Program and Abstracts. 1994 ;[citado 2024 nov. 04 ]
Vancouver
Basmaji P, Matvienko B, Guimarães FEG. Evidence of localized luminescence centers in porous silicon. Program and Abstracts. 1994 ;[citado 2024 nov. 04 ]
Trabalho de evento-resumo
Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field (1994)
Gusev, G M; Gennser, U; Maude, D K; Portal, J C; Rossi, J C; Lubyshev, D I; Basmaji, Pierre
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. 1994, Anais.. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo, 1994. . Acesso em: 04 nov. 2024.
APA
Gusev, G. M., Gennser, U., Maude, D. K., Portal, J. C., Rossi, J. C., Lubyshev, D. I., & Basmaji, P. (1994). Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. In Abstracts. Vancouver: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Gusev GM, Gennser U, Maude DK, Portal JC, Rossi JC, Lubyshev DI, Basmaji P. Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. Abstracts. 1994 ;[citado 2024 nov. 04 ]
Vancouver
Gusev GM, Gennser U, Maude DK, Portal JC, Rossi JC, Lubyshev DI, Basmaji P. Conductance fluctuations in coupled quantum wells in the presence of an in- plane magnetic field. Abstracts. 1994 ;[citado 2024 nov. 04 ]

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