ReP USP - Resultado da busca

Artigo de periodico
First-principles materials study for spintronics: MnAs and MnN (2004)
Paiva, R de; Alves, J L A; Nogueira, R A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAIVA, R de et al. First-principles materials study for spintronics: MnAs and MnN. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400008. Acesso em: 19 jun. 2024.
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2004). First-principles materials study for spintronics: MnAs and MnN. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400008
NLM
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First-principles materials study for spintronics: MnAs and MnN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400008
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First-principles materials study for spintronics: MnAs and MnN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400008
Artigo de periodico
Strain-induced shifts of the zone-center phonons of III-nitrides (2004)
Alves, H W Leite; Alves, J L A; Santos, A M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, EFEITO MOSSBAUER
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W Leite et al. Strain-induced shifts of the zone-center phonons of III-nitrides. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400041. Acesso em: 19 jun. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2004). Strain-induced shifts of the zone-center phonons of III-nitrides. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400041
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Strain-induced shifts of the zone-center phonons of III-nitrides [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400041
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Strain-induced shifts of the zone-center phonons of III-nitrides [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400041
Artigo de periodico
Phase separation and ordering in group-III nitride alloys (2004)
Teles, L K; Marques, M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, TERMODINÂMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TELES, L K et al. Phase separation and ordering in group-III nitride alloys. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400014. Acesso em: 19 jun. 2024.
APA
Teles, L. K., Marques, M., Scolfaro, L. M. R., & Leite, J. R. (2004). Phase separation and ordering in group-III nitride alloys. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400014
NLM
Teles LK, Marques M, Scolfaro LMR, Leite JR. Phase separation and ordering in group-III nitride alloys [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400014
Vancouver
Teles LK, Marques M, Scolfaro LMR, Leite JR. Phase separation and ordering in group-III nitride alloys [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400014
Artigo de periodico
Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN (2004)
Alves, H W Leite; Alves, J L A; Santos, A M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W Leite et al. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400021. Acesso em: 19 jun. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2004). Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400021
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400021
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97332004000400021
Artigo de periodico
Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study (2004)
Paiva, R de; Alves, J L A; Nogueira, R A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAIVA, R de et al. Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study. Brazilian Journal of Physics, 2004Tradução . . Disponível em: http://www.scielo.br/pdf/bjp/v34n2b/a31v342b.pdf. Acesso em: 19 jun. 2024.
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2004). Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study. Brazilian Journal of Physics. Recuperado de http://www.scielo.br/pdf/bjp/v34n2b/a31v342b.pdf
NLM
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: http://www.scielo.br/pdf/bjp/v34n2b/a31v342b.pdf
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. Diluted magnetic 'Ga IND. 1-x''Mn IND. x'N alloys: a first-principles study [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 19 ] Available from: http://www.scielo.br/pdf/bjp/v34n2b/a31v342b.pdf
Artigo de periodico
First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys (2000)
Teles, L. K.; Furthmuller, J; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Bechstedt, F
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TELES, L. K. et al. First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys. Physical Review B, v. 62, n. 4, p. 2475-2485, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000004002475000001&idtype=cvips. Acesso em: 19 jun. 2024.
APA
Teles, L. K., Furthmuller, J., Scolfaro, L. M. R., Leite, J. R., & Bechstedt, F. (2000). First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys. Physical Review B, 62( 4), 2475-2485. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000004002475000001&idtype=cvips
NLM
Teles LK, Furthmuller J, Scolfaro LMR, Leite JR, Bechstedt F. First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys [Internet]. Physical Review B. 2000 ; 62( 4): 2475-2485.[citado 2024 jun. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000004002475000001&idtype=cvips
Vancouver
Teles LK, Furthmuller J, Scolfaro LMR, Leite JR, Bechstedt F. First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys [Internet]. Physical Review B. 2000 ; 62( 4): 2475-2485.[citado 2024 jun. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000062000004002475000001&idtype=cvips
Artigo de periodico
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A.; Silva, M T O; Galzerani, J C; Rodrigues, S C P; Scolfaro, Luisa Maria Ribeiro; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N T; Basmaji, P
Source: Journal of Applied Physics. Unidades: IF, IFSC
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 19 jun. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Valence band structure of cubic AlGaN/GaN superlattices (2000)
Rodrigues, S C P; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Sipahi, Guilherme Matos
Source: Applied Physics Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S C P et al. Valence band structure of cubic AlGaN/GaN superlattices. Applied Physics Letters, v. 76, n. 8, p. 1015-1017, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.125924. Acesso em: 19 jun. 2024.
APA
Rodrigues, S. C. P., Scolfaro, L. M. R., Leite, J. R., & Sipahi, G. M. (2000). Valence band structure of cubic AlGaN/GaN superlattices. Applied Physics Letters, 76( 8), 1015-1017. doi:10.1063/1.125924
NLM
Rodrigues SCP, Scolfaro LMR, Leite JR, Sipahi GM. Valence band structure of cubic AlGaN/GaN superlattices [Internet]. Applied Physics Letters. 2000 ; 76( 8): 1015-1017.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1063/1.125924
Vancouver
Rodrigues SCP, Scolfaro LMR, Leite JR, Sipahi GM. Valence band structure of cubic AlGaN/GaN superlattices [Internet]. Applied Physics Letters. 2000 ; 76( 8): 1015-1017.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1063/1.125924
Artigo de periodico
Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering (2000)
Lemos, V; Silveira, E; Leite, J. R.; Tabata, A; Trentin, R.; Scolfaro, Luisa Maria Ribeiro; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEMOS, V et al. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering. Physical Review Letters, v. 84, n. 16, p. 3666-3669, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips. Acesso em: 19 jun. 2024.
APA
Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Scolfaro, L. M. R., et al. (2000). Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering. Physical Review Letters, 84( 16), 3666-3669. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
NLM
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Scolfaro LMR, Frey T, As DJ, Schikora D, Lischka K. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering [Internet]. Physical Review Letters. 2000 ; 84( 16): 3666-3669.[citado 2024 jun. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
Vancouver
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Scolfaro LMR, Frey T, As DJ, Schikora D, Lischka K. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering [Internet]. Physical Review Letters. 2000 ; 84( 16): 3666-3669.[citado 2024 jun. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
Artigo de periodico
Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination (1999)
Santos, A. M. dos; Beliaev, Dmitri; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, A. M. dos et al. Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination. Brazilian Journal of Physics, v. 29, n. 4, p. 775-778, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400034. Acesso em: 19 jun. 2024.
APA
Santos, A. M. dos, Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1999). Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination. Brazilian Journal of Physics, 29( 4), 775-778. doi:10.1590/s0103-97331999000400034
NLM
Santos AM dos, Beliaev D, Scolfaro LMR, Leite JR. Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 775-778.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97331999000400034
Vancouver
Santos AM dos, Beliaev D, Scolfaro LMR, Leite JR. Quasi-Fermi levels, chemical and electric potential profiles of a semiconductor under illumination [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 775-778.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1590/s0103-97331999000400034
Artigo de periodico
Structural properties and Raman modes of zinc blende InN epitaxial layers (1999)
Tabata, A.; Lima, A. P.; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Lemos, V.; Schoettker, B.; Frey, T.; Schikova, D.; Lischka, K.
Source: Applied Physics Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A. et al. Structural properties and Raman modes of zinc blende InN epitaxial layers. Applied Physics Letters, v. 74, n. 3, p. 362-364, 1999Tradução . . Disponível em: https://doi.org/10.1063/1.123072. Acesso em: 19 jun. 2024.
APA
Tabata, A., Lima, A. P., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Lemos, V., et al. (1999). Structural properties and Raman modes of zinc blende InN epitaxial layers. Applied Physics Letters, 74( 3), 362-364. doi:10.1063/1.123072
NLM
Tabata A, Lima AP, Teles LK, Scolfaro LMR, Leite JR, Lemos V, Schoettker B, Frey T, Schikova D, Lischka K. Structural properties and Raman modes of zinc blende InN epitaxial layers [Internet]. Applied Physics Letters. 1999 ; 74( 3): 362-364.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1063/1.123072
Vancouver
Tabata A, Lima AP, Teles LK, Scolfaro LMR, Leite JR, Lemos V, Schoettker B, Frey T, Schikova D, Lischka K. Structural properties and Raman modes of zinc blende InN epitaxial layers [Internet]. Applied Physics Letters. 1999 ; 74( 3): 362-364.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1063/1.123072
Artigo de periodico
Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers (1999)
Levine, A.; Silva, Euzi Conceicao Fernandes da; Sipahi, Guilherme Matos; Quivy, A. A.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Dias, I. F. L.; Lauretto, E.; Oliveira, J. B. B.; Meneses, E. A.; Oliveira, A. G.
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEVINE, A. et al. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, v. 59, n. 7, p. 4634-4637, 1999Tradução . . Disponível em: https://doi.org/10.1103/physrevb.59.4634. Acesso em: 19 jun. 2024.
APA
Levine, A., Silva, E. C. F. da, Sipahi, G. M., Quivy, A. A., Scolfaro, L. M. R., Leite, J. R., et al. (1999). Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers. Physical Review B, 59( 7), 4634-4637. doi:10.1103/physrevb.59.4634
NLM
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1103/physrevb.59.4634
Vancouver
Levine A, Silva ECF da, Sipahi GM, Quivy AA, Scolfaro LMR, Leite JR, Dias IFL, Lauretto E, Oliveira JBB, Meneses EA, Oliveira AG. Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers [Internet]. Physical Review B. 1999 ; 59( 7): 4634-4637.[citado 2024 jun. 19 ] Available from: https://doi.org/10.1103/physrevb.59.4634
Trabalho de evento-anais periodico
Optical properties of GaAs/AlGaAs selectively doped quantum well structures (1998)
Tabata, A; Levine, A; Marti ceschin, A; Quivy, A. A.; Scolfaro, L M R; Enderlein, R; Leite, J. R.
Source: Radiation Effects & Defects in Solids. Conference titles: Symposium on Defect Dependent Processes in Insulators and Seminconductors. Unidade: IF
Subjects: FÍSICA, FÍSICA NUCLEAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A et al. Optical properties of GaAs/AlGaAs selectively doped quantum well structures. Radiation Effects & Defects in Solids. London: Gordon & Breach. . Acesso em: 19 jun. 2024. , 1998
APA
Tabata, A., Levine, A., Marti ceschin, A., Quivy, A. A., Scolfaro, L. M. R., Enderlein, R., & Leite, J. R. (1998). Optical properties of GaAs/AlGaAs selectively doped quantum well structures. Radiation Effects & Defects in Solids. London: Gordon & Breach.
NLM
Tabata A, Levine A, Marti ceschin A, Quivy AA, Scolfaro LMR, Enderlein R, Leite JR. Optical properties of GaAs/AlGaAs selectively doped quantum well structures. Radiation Effects & Defects in Solids. 1998 ; 146 207-214.[citado 2024 jun. 19 ]
Vancouver
Tabata A, Levine A, Marti ceschin A, Quivy AA, Scolfaro LMR, Enderlein R, Leite JR. Optical properties of GaAs/AlGaAs selectively doped quantum well structures. Radiation Effects & Defects in Solids. 1998 ; 146 207-214.[citado 2024 jun. 19 ]
Artigo de periodico
Reply to the comment on the paper density functional theory for holes in semiconductors (1998)
Enderlein, R; Sipahi, Guilherme Matos; Scolfaro, L M R; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ENDERLEIN, R et al. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters, v. 80, n. 14, p. 3160, 1998Tradução . . Acesso em: 19 jun. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1998). Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters, 80( 14), 3160.
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 jun. 19 ]
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 jun. 19 ]
Trabalho de evento-anais periodico
Stability of native defects in cubic boron nitride (1998)
Castineira, J L P; Leite, J. R.; Scolfaro, L M R; Enderlein, R; Alves, H W Leite; Alves, J L A
Source: Radiation Effects and Defects in Solids. Conference titles: Symposium on Defect Dependent Processes in Insulators and Seminconductors. Unidade: IF
Subjects: FÍSICA, FÍSICA NUCLEAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CASTINEIRA, J L P et al. Stability of native defects in cubic boron nitride. Radiation Effects and Defects in Solids. London: Gordon and Breach. . Acesso em: 19 jun. 2024. , 1998
APA
Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, H. W. L., & Alves, J. L. A. (1998). Stability of native defects in cubic boron nitride. Radiation Effects and Defects in Solids. London: Gordon and Breach.
NLM
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves HWL, Alves JLA. Stability of native defects in cubic boron nitride. Radiation Effects and Defects in Solids. 1998 ; 146 49-63.[citado 2024 jun. 19 ]
Vancouver
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves HWL, Alves JLA. Stability of native defects in cubic boron nitride. Radiation Effects and Defects in Solids. 1998 ; 146 49-63.[citado 2024 jun. 19 ]
Artigo de periodico
Density functional theory for holes in semiconductors - replay (1998)
Enderlein, R; Sipahi, Guilherme Matos; Scolfaro, L M R; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ENDERLEIN, R et al. Density functional theory for holes in semiconductors - replay. Physical Review Letters, v. 80, n. 14, p. 3160, 1998Tradução . . Acesso em: 19 jun. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1998). Density functional theory for holes in semiconductors - replay. Physical Review Letters, 80( 14), 3160.
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density functional theory for holes in semiconductors - replay. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 jun. 19 ]
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density functional theory for holes in semiconductors - replay. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 jun. 19 ]
Artigo de periodico
Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields (1997)
Takahashi, E K; Lino, A T; Scólfaro, Luisa Maria Ribeiro
Source: International Journal of Modern Physics B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TAKAHASHI, E K e LINO, A T e SCÓLFARO, Luisa Maria Ribeiro. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B, v. 11, n. 9, p. 1195-1207, 1997Tradução . . Acesso em: 19 jun. 2024.
APA
Takahashi, E. K., Lino, A. T., & Scólfaro, L. M. R. (1997). Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B, 11( 9), 1195-1207.
NLM
Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207.[citado 2024 jun. 19 ]
Vancouver
Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207.[citado 2024 jun. 19 ]

USP Schools

ReP

Filtros

Authors

Subjects

Source title

Normalized affiliation