Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields (1997)
- Authors:
- USP affiliated author: SCOLFARO, LUISA MARIA RIBEIRO - IF
- School: IF
- Subject: FÍSICA
- Language: Inglês
- Source:
- Título do periódico: International Journal of Modern Physics B
- Volume/Número/Paginação/Ano: v. 11, n. 9, p. 1195-1207, 1997
-
ABNT
TAKAHASHI, E K; LINO, A T; SCÓLFARO, Luisa Maria Ribeiro. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B[S.l.], v. 11, n. 9, p. 1195-1207, 1997. -
APA
Takahashi, E. K., Lino, A. T., & Scólfaro, L. M. R. (1997). Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B, 11( 9), 1195-1207. -
NLM
Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207. -
Vancouver
Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207. - Ab initio calculation of transition metals nitrides under strain: structural and magnetic properties
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