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Artigo de periodico
Mesoscopic transport in two-dimensional topological insulators (2019)
Gusev, G.M. ; Kvon, Z.D.; Olshanetsky, E.B.; Mikhailov, N.N.
Source: Solid State Communications. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, NANOTECNOLOGIA, FÍSICA MODERNA, SPINTRÔNICA
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GUSEV, G.M. et al. Mesoscopic transport in two-dimensional topological insulators. Solid State Communications, v. 302, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2019.113701. Acesso em: 26 jun. 2024.
APA
Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B., & Mikhailov, N. N. (2019). Mesoscopic transport in two-dimensional topological insulators. Solid State Communications, 302. doi:10.1016/j.ssc.2019.113701
NLM
Gusev GM, Kvon ZD, Olshanetsky EB, Mikhailov NN. Mesoscopic transport in two-dimensional topological insulators [Internet]. Solid State Communications. 2019 ; 302[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2019.113701
Vancouver
Gusev GM, Kvon ZD, Olshanetsky EB, Mikhailov NN. Mesoscopic transport in two-dimensional topological insulators [Internet]. Solid State Communications. 2019 ; 302[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2019.113701
Artigo de periodico
Importance of van der Waals interaction on structural, vibrational, and thermodynamic properties of NaCl (2018)
Marcondes, Michel L; Wentzcovitch, Renata M; Assali, L. V. C.
Source: Solid State Communications. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, PROPRIEDADES DOS MATERIAIS, ESTRUTURA DOS MATERIAIS, ESTRUTURA DOS SÓLIDOS
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MARCONDES, Michel L e WENTZCOVITCH, Renata M e ASSALI, L. V. C. Importance of van der Waals interaction on structural, vibrational, and thermodynamic properties of NaCl. Solid State Communications, v. 273, p. 11-16, 2018Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2018.01.008. Acesso em: 26 jun. 2024.
APA
Marcondes, M. L., Wentzcovitch, R. M., & Assali, L. V. C. (2018). Importance of van der Waals interaction on structural, vibrational, and thermodynamic properties of NaCl. Solid State Communications, 273, 11-16. doi:10.1016/j.ssc.2018.01.008
NLM
Marcondes ML, Wentzcovitch RM, Assali LVC. Importance of van der Waals interaction on structural, vibrational, and thermodynamic properties of NaCl [Internet]. Solid State Communications. 2018 ; 273 11-16.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2018.01.008
Vancouver
Marcondes ML, Wentzcovitch RM, Assali LVC. Importance of van der Waals interaction on structural, vibrational, and thermodynamic properties of NaCl [Internet]. Solid State Communications. 2018 ; 273 11-16.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2018.01.008
Artigo de periodico
Stacking-dependent transport properties in few-layers graphene (2017)
Lima, Matheus Paes; Padilha, José Eduardo; Pontes, Renato Borges; Fazzio, Adalberto; Silva, Antônio José Roque da
Source: Solid State Communications. Unidade: IF
Subjects: NANOTECNOLOGIA, FENÔMENOS DE TRANSPORTE, PROPRIEDADES DOS MATERIAIS
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LIMA, Matheus Paes et al. Stacking-dependent transport properties in few-layers graphene. Solid State Communications, v. 250, p. 70-74, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2016.11.012. Acesso em: 26 jun. 2024.
APA
Lima, M. P., Padilha, J. E., Pontes, R. B., Fazzio, A., & Silva, A. J. R. da. (2017). Stacking-dependent transport properties in few-layers graphene. Solid State Communications, 250, 70-74. doi:10.1016/j.ssc.2016.11.012
NLM
Lima MP, Padilha JE, Pontes RB, Fazzio A, Silva AJR da. Stacking-dependent transport properties in few-layers graphene [Internet]. Solid State Communications. 2017 ; 250 70-74.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2016.11.012
Vancouver
Lima MP, Padilha JE, Pontes RB, Fazzio A, Silva AJR da. Stacking-dependent transport properties in few-layers graphene [Internet]. Solid State Communications. 2017 ; 250 70-74.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2016.11.012
Artigo de periodico
Energetics and stability of vacancies in carbon nanotubes (2011)
Padilha, J E ; Amorim, R G; Rocha, A R; Silva, A J R da ; Fazzio, A
Source: Solid State Communications. Unidade: IF
Assunto: ENERGIA
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PADILHA, J E et al. Energetics and stability of vacancies in carbon nanotubes. Solid State Communications, v. 151, n. 6, p. 482-486, 2011Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2010.12.031. Acesso em: 26 jun. 2024.
APA
Padilha, J. E., Amorim, R. G., Rocha, A. R., Silva, A. J. R. da, & Fazzio, A. (2011). Energetics and stability of vacancies in carbon nanotubes. Solid State Communications, 151( 6), 482-486. doi:10.1016/j.ssc.2010.12.031
NLM
Padilha JE, Amorim RG, Rocha AR, Silva AJR da, Fazzio A. Energetics and stability of vacancies in carbon nanotubes [Internet]. Solid State Communications. 2011 ;151( 6): 482-486.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2010.12.031
Vancouver
Padilha JE, Amorim RG, Rocha AR, Silva AJR da, Fazzio A. Energetics and stability of vacancies in carbon nanotubes [Internet]. Solid State Communications. 2011 ;151( 6): 482-486.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2010.12.031
Artigo de periodico
Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes (2007)
Baierle, Rogerio Jose; Schmidt, T M; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Subjects: VIDRO, VIDRO
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BAIERLE, Rogerio Jose e SCHMIDT, T M e FAZZIO, Adalberto. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes. Solid State Communications, v. 141, n. 1-2, p. 49-53, 2007Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2007.01.036. Acesso em: 26 jun. 2024.
APA
Baierle, R. J., Schmidt, T. M., & Fazzio, A. (2007). Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes. Solid State Communications, 141( 1-2), 49-53. doi:10.1016/j.ssc.2007.01.036
NLM
Baierle RJ, Schmidt TM, Fazzio A. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes [Internet]. Solid State Communications. 2007 ; 141( 1-2): 49-53.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2007.01.036
Vancouver
Baierle RJ, Schmidt TM, Fazzio A. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes [Internet]. Solid State Communications. 2007 ; 141( 1-2): 49-53.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2007.01.036
Artigo de periodico
Phenomenological band structure model of magnetic coupling in semiconductors (2006)
Dalpian, Gustavo M; Wei, Su-Huai; Gong, X Z; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, FERROMAGNETISMO, MAGNETISMO
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DALPIAN, Gustavo M et al. Phenomenological band structure model of magnetic coupling in semiconductors. Solid State Communications, v. 138, n. 7, p. 353-358, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2006.03.002. Acesso em: 26 jun. 2024.
APA
Dalpian, G. M., Wei, S. -H., Gong, X. Z., Silva, A. J. R. da, & Fazzio, A. (2006). Phenomenological band structure model of magnetic coupling in semiconductors. Solid State Communications, 138( 7), 353-358. doi:10.1016/j.ssc.2006.03.002
NLM
Dalpian GM, Wei S-H, Gong XZ, Silva AJR da, Fazzio A. Phenomenological band structure model of magnetic coupling in semiconductors [Internet]. Solid State Communications. 2006 ; 138( 7): 353-358.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2006.03.002
Vancouver
Dalpian GM, Wei S-H, Gong XZ, Silva AJR da, Fazzio A. Phenomenological band structure model of magnetic coupling in semiconductors [Internet]. Solid State Communications. 2006 ; 138( 7): 353-358.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2006.03.002
Artigo de periodico
Comparative study of lower fullerenes doped with boron and nitrogen (2006)
Viani, Lucas; Santos, Maria Cristina dos
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA
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VIANI, Lucas e SANTOS, Maria Cristina dos. Comparative study of lower fullerenes doped with boron and nitrogen. Solid State Communications, v. 138, n. 10-11, p. 498-501, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2006.04.027. Acesso em: 26 jun. 2024.
APA
Viani, L., & Santos, M. C. dos. (2006). Comparative study of lower fullerenes doped with boron and nitrogen. Solid State Communications, 138( 10-11), 498-501. doi:10.1016/j.ssc.2006.04.027
NLM
Viani L, Santos MC dos. Comparative study of lower fullerenes doped with boron and nitrogen [Internet]. Solid State Communications. 2006 ; 138( 10-11): 498-501.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2006.04.027
Vancouver
Viani L, Santos MC dos. Comparative study of lower fullerenes doped with boron and nitrogen [Internet]. Solid State Communications. 2006 ; 138( 10-11): 498-501.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/j.ssc.2006.04.027
Artigo de periodico
Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures (2004)
Almeida, R B; Borges, A N; Machado, P C M; Leite, J. R.; Osório, F A P
Source: Solid State Communications. Unidade: IF
Subjects: SEMICONDUTORES, INTERAÇÕES FUNDAMENTAIS
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ALMEIDA, R B et al. Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures. Solid State Communications, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4BFXF5K-8-34&_cdi=5545&_orig=browse&_coverDate=04%2F30%2F2004&_sk=998699998&view=c&wchp=dGLbVtb-zSkzS&_acct=C000049650&_version=1&_userid=972067&md5=fc468d762a4d997bee71d4a23b023d3d&ie=f.pdf. Acesso em: 26 jun. 2024.
APA
Almeida, R. B., Borges, A. N., Machado, P. C. M., Leite, J. R., & Osório, F. A. P. (2004). Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures. Solid State Communications. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4BFXF5K-8-34&_cdi=5545&_orig=browse&_coverDate=04%2F30%2F2004&_sk=998699998&view=c&wchp=dGLbVtb-zSkzS&_acct=C000049650&_version=1&_userid=972067&md5=fc468d762a4d997bee71d4a23b023d3d&ie=f.pdf
NLM
Almeida RB, Borges AN, Machado PCM, Leite JR, Osório FAP. Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures [Internet]. Solid State Communications. 2004 ;[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4BFXF5K-8-34&_cdi=5545&_orig=browse&_coverDate=04%2F30%2F2004&_sk=998699998&view=c&wchp=dGLbVtb-zSkzS&_acct=C000049650&_version=1&_userid=972067&md5=fc468d762a4d997bee71d4a23b023d3d&ie=f.pdf
Vancouver
Almeida RB, Borges AN, Machado PCM, Leite JR, Osório FAP. Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures [Internet]. Solid State Communications. 2004 ;[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4BFXF5K-8-34&_cdi=5545&_orig=browse&_coverDate=04%2F30%2F2004&_sk=998699998&view=c&wchp=dGLbVtb-zSkzS&_acct=C000049650&_version=1&_userid=972067&md5=fc468d762a4d997bee71d4a23b023d3d&ie=f.pdf
Artigo de periodico
Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling (2004)
Goya, Gerardo Fabían
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, NANOTECNOLOGIA, DIFRAÇÃO POR RAIOS X, MICROSCOPIA ELETRÔNICA
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ABNT
GOYA, Gerardo Fabían. Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling. Solid State Communications, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4C82743-6-25&_cdi=5545&_orig=browse&_coverDate=06%2F30%2F2004&_sk=998699987&view=c&wchp=dGLbVlb-zSkzV&_acct=C000049650&_version=1&_userid=972067&md5=94806f0c675d1186bcc8351f21781902&ie=f.pdf. Acesso em: 26 jun. 2024.
APA
Goya, G. F. (2004). Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling. Solid State Communications. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4C82743-6-25&_cdi=5545&_orig=browse&_coverDate=06%2F30%2F2004&_sk=998699987&view=c&wchp=dGLbVlb-zSkzV&_acct=C000049650&_version=1&_userid=972067&md5=94806f0c675d1186bcc8351f21781902&ie=f.pdf
NLM
Goya GF. Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling [Internet]. Solid State Communications. 2004 ;[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4C82743-6-25&_cdi=5545&_orig=browse&_coverDate=06%2F30%2F2004&_sk=998699987&view=c&wchp=dGLbVlb-zSkzV&_acct=C000049650&_version=1&_userid=972067&md5=94806f0c675d1186bcc8351f21781902&ie=f.pdf
Vancouver
Goya GF. Handling the particle size and distribution of 'Fe IND. 3''O IND. 4' nanoparticles through ball milling [Internet]. Solid State Communications. 2004 ;[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4C82743-6-25&_cdi=5545&_orig=browse&_coverDate=06%2F30%2F2004&_sk=998699987&view=c&wchp=dGLbVlb-zSkzV&_acct=C000049650&_version=1&_userid=972067&md5=94806f0c675d1186bcc8351f21781902&ie=f.pdf
Artigo de periodico
Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase (2003)
Becerra, Carlos Castilla; Paduan-Filho, A.
Source: Solid State Communications. Unidade: IF
Subjects: MATERIAIS MAGNÉTICOS, FERROMAGNETISMO, TEMPERATURA
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BECERRA, Carlos Castilla e PADUAN-FILHO, A. Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase. Solid State Communications, v. 125, n. 2, p. 99-101, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b. Acesso em: 26 jun. 2024.
APA
Becerra, C. C., & Paduan-Filho, A. (2003). Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase. Solid State Communications, 125( 2), 99-101. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
NLM
Becerra CC, Paduan-Filho A. Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase [Internet]. Solid State Communications. 2003 ; 125( 2): 99-101.[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Vancouver
Becerra CC, Paduan-Filho A. Field dependent susceptibility of the 2D ferromagnet '('CH IND.3' 'NH IND.3) IND.2' 'CuCl IND.4' in the paramagnetic phase [Internet]. Solid State Communications. 2003 ; 125( 2): 99-101.[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Artigo de periodico
Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides (2003)
Goya, Gerardo Fabían; Sagredo, V
Source: Solid State Communications. Unidade: IF
Subjects: EFEITO MOSSBAUER, ESPECTROSCOPIA DE RAIO GAMA
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ABNT
GOYA, Gerardo Fabían e SAGREDO, V. Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides. Solid State Communications, v. 125, n. 5, p. 247-251, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b. Acesso em: 26 jun. 2024.
APA
Goya, G. F., & Sagredo, V. (2003). Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides. Solid State Communications, 125( 5), 247-251. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
NLM
Goya GF, Sagredo V. Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides [Internet]. Solid State Communications. 2003 ; 125( 5): 247-251.[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Vancouver
Goya GF, Sagredo V. Antiferromagnetism and spin-glass transition in the 'FeIn IND.X' 'Cr IND.2-X' 'Se IND.4' series of selenides [Internet]. Solid State Communications. 2003 ; 125( 5): 247-251.[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Artigo de periodico
Near band-edge optical properties of cubic GaN (2003)
Fernandez, J R L; Noriega, O C; Soares, J A N T; Cerdeira, F; Meneses, E A; Leite, J. R.; As, D J; Schikora, D; Lischka, K
Source: Solid State Communications. Unidade: IF
Subjects: FILMES FINOS, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN. Solid State Communications, v. 125, n. 3-4, p. 205-208, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(02)00768-8. Acesso em: 26 jun. 2024.
APA
Fernandez, J. R. L., Noriega, O. C., Soares, J. A. N. T., Cerdeira, F., Meneses, E. A., Leite, J. R., et al. (2003). Near band-edge optical properties of cubic GaN. Solid State Communications, 125( 3-4), 205-208. doi:10.1016/s0038-1098(02)00768-8
NLM
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Vancouver
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Artigo de periodico
Electric field gradients at Ta in Zr and Hf inter-metallic compounds (2002)
Terrazos, L. A.; Petrilli, Helena Maria; Marszalek, M.; Saitovitch, H.; Silva, P. R. J.; Blaha, P.; Schwarz, K.
Source: Solid State Communications. Unidade: IF
Subjects: INTERAÇÕES NUCLEARES, ÍONS, RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, ESTRUTURA ELETRÔNICA
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TERRAZOS, L. A. et al. Electric field gradients at Ta in Zr and Hf inter-metallic compounds. Solid State Communications, v. 121, n. 9-10, p. 525-529, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(01)00515-4. Acesso em: 26 jun. 2024.
APA
Terrazos, L. A., Petrilli, H. M., Marszalek, M., Saitovitch, H., Silva, P. R. J., Blaha, P., & Schwarz, K. (2002). Electric field gradients at Ta in Zr and Hf inter-metallic compounds. Solid State Communications, 121( 9-10), 525-529. doi:10.1016/s0038-1098(01)00515-4
NLM
Terrazos LA, Petrilli HM, Marszalek M, Saitovitch H, Silva PRJ, Blaha P, Schwarz K. Electric field gradients at Ta in Zr and Hf inter-metallic compounds [Internet]. Solid State Communications. 2002 ; 121( 9-10): 525-529.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(01)00515-4
Vancouver
Terrazos LA, Petrilli HM, Marszalek M, Saitovitch H, Silva PRJ, Blaha P, Schwarz K. Electric field gradients at Ta in Zr and Hf inter-metallic compounds [Internet]. Solid State Communications. 2002 ; 121( 9-10): 525-529.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(01)00515-4
Artigo de periodico
Dislocation core properties in semiconductors (2001)
Justo Filho, João Francisco ; Antonelli, Alex; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
JUSTO FILHO, João Francisco e ANTONELLI, Alex e FAZZIO, Adalberto. Dislocation core properties in semiconductors. Solid State Communications, v. 118, n. 12, p. 651-655, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(01)00197-1. Acesso em: 26 jun. 2024.
APA
Justo Filho, J. F., Antonelli, A., & Fazzio, A. (2001). Dislocation core properties in semiconductors. Solid State Communications, 118( 12), 651-655. doi:10.1016/s0038-1098(01)00197-1
NLM
Justo Filho JF, Antonelli A, Fazzio A. Dislocation core properties in semiconductors [Internet]. Solid State Communications. 2001 ; 118( 12): 651-655.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(01)00197-1
Vancouver
Justo Filho JF, Antonelli A, Fazzio A. Dislocation core properties in semiconductors [Internet]. Solid State Communications. 2001 ; 118( 12): 651-655.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(01)00197-1
Artigo de periodico
Ab initio calculations on the compensation mechanisms in InP (2001)
Schmidt, T M; Miwa, R H; Fazzio, Adalberto; Mota, R.
Source: Solid State Communications. Unidade: IF
Subjects: SEMICONDUTORES, MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS;PROPRIEDADES TÉRMICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCHMIDT, T M et al. Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, v. 117, n. 6, p. 353-355, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(00)00487-7. Acesso em: 26 jun. 2024.
APA
Schmidt, T. M., Miwa, R. H., Fazzio, A., & Mota, R. (2001). Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, 117( 6), 353-355. doi:10.1016/s0038-1098(00)00487-7
NLM
Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7
Vancouver
Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7
Artigo de periodico
Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' (2001)
Silva, Cesar R S da; Venezuela, P; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Solid State Communications. Unidade: IF
Subjects: SEMICONDUTORES, SUPERCONDUTIVIDADE, MUDANÇA DE FASE
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ABNT
SILVA, Cesar R S da et al. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'. Solid State Communications, v. 120, n. 9-10, p. 369-373, 2001Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b. Acesso em: 26 jun. 2024.
APA
Silva, C. R. S. da, Venezuela, P., Silva, A. J. R. da, & Fazzio, A. (2001). Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'. Solid State Communications, 120( 9-10), 369-373. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
NLM
Silva CRS da, Venezuela P, Silva AJR da, Fazzio A. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' [Internet]. Solid State Communications. 2001 ; 120( 9-10): 369-373.[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Vancouver
Silva CRS da, Venezuela P, Silva AJR da, Fazzio A. Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5' [Internet]. Solid State Communications. 2001 ; 120( 9-10): 369-373.[citado 2024 jun. 26 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5545&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2c31626c8839eda088d08d3a1744c13b
Artigo de periodico
III-N(110) surface relaxation and its dependence on the chemical bonding (2000)
Miotto, R.; Ferraz, A. C.; Srivastava, G P
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MIOTTO, R. e FERRAZ, A. C. e SRIVASTAVA, G P. III-N(110) surface relaxation and its dependence on the chemical bonding. Solid State Communications, v. 115, n. 1, p. 67-71, 2000Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(00)00145-9. Acesso em: 26 jun. 2024.
APA
Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2000). III-N(110) surface relaxation and its dependence on the chemical bonding. Solid State Communications, 115( 1), 67-71. doi:10.1016/s0038-1098(00)00145-9
NLM
Miotto R, Ferraz AC, Srivastava GP. III-N(110) surface relaxation and its dependence on the chemical bonding [Internet]. Solid State Communications. 2000 ; 115( 1): 67-71.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(00)00145-9
Vancouver
Miotto R, Ferraz AC, Srivastava GP. III-N(110) surface relaxation and its dependence on the chemical bonding [Internet]. Solid State Communications. 2000 ; 115( 1): 67-71.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(00)00145-9
Artigo de periodico
Concerted-exchange mechanism for antistructure pair defects in GaAs (1999)
Janotti, A.; Fazzio, Adalberto; Mota, R.; Piquini, P.
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JANOTTI, A. et al. Concerted-exchange mechanism for antistructure pair defects in GaAs. Solid State Communications, v. 110, p. 457-461, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(98)00606-1. Acesso em: 26 jun. 2024.
APA
Janotti, A., Fazzio, A., Mota, R., & Piquini, P. (1999). Concerted-exchange mechanism for antistructure pair defects in GaAs. Solid State Communications, 110, 457-461. doi:10.1016/s0038-1098(98)00606-1
NLM
Janotti A, Fazzio A, Mota R, Piquini P. Concerted-exchange mechanism for antistructure pair defects in GaAs [Internet]. Solid State Communications. 1999 ; 110 457-461.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(98)00606-1
Vancouver
Janotti A, Fazzio A, Mota R, Piquini P. Concerted-exchange mechanism for antistructure pair defects in GaAs [Internet]. Solid State Communications. 1999 ; 110 457-461.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1016/s0038-1098(98)00606-1
Artigo de periodico
Quadrupole interaction in ' (N'h ind.4') IND.2''FE''F IND.5''H IND.2'o (1997)
Hanamoto, L K; Partiti, Carmen Silvia de Moya
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
HANAMOTO, L K e PARTITI, Carmen Silvia de Moya. Quadrupole interaction in ' (N'h ind.4') IND.2''FE''F IND.5''H IND.2'o. Solid State Communications, v. 101, n. 1 , p. 63-5, 1997Tradução . . Acesso em: 26 jun. 2024.
APA
Hanamoto, L. K., & Partiti, C. S. de M. (1997). Quadrupole interaction in ' (N'h ind.4') IND.2''FE''F IND.5''H IND.2'o. Solid State Communications, 101( 1 ), 63-5.
NLM
Hanamoto LK, Partiti CS de M. Quadrupole interaction in ' (N'h ind.4') IND.2''FE''F IND.5''H IND.2'o. Solid State Communications. 1997 ;101( 1 ): 63-5.[citado 2024 jun. 26 ]
Vancouver
Hanamoto LK, Partiti CS de M. Quadrupole interaction in ' (N'h ind.4') IND.2''FE''F IND.5''H IND.2'o. Solid State Communications. 1997 ;101( 1 ): 63-5.[citado 2024 jun. 26 ]
Artigo de periodico
Lattice and molecular dynamics in (N'H IND.2'Fe'F IND.5''H IND.2'O (1997)
Hanamoto, L K; Partiti, Carmen Sílvia de Moya
Source: Solid State Communications. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HANAMOTO, L K e PARTITI, Carmen Sílvia de Moya. Lattice and molecular dynamics in (N'H IND.2'Fe'F IND.5''H IND.2'O. Solid State Communications, v. 103, n. 6, p. 337-339, 1997Tradução . . Acesso em: 26 jun. 2024.
APA
Hanamoto, L. K., & Partiti, C. S. de M. (1997). Lattice and molecular dynamics in (N'H IND.2'Fe'F IND.5''H IND.2'O. Solid State Communications, 103( 6), 337-339.
NLM
Hanamoto LK, Partiti CS de M. Lattice and molecular dynamics in (N'H IND.2'Fe'F IND.5''H IND.2'O. Solid State Communications. 1997 ; 103( 6): 337-339.[citado 2024 jun. 26 ]
Vancouver
Hanamoto LK, Partiti CS de M. Lattice and molecular dynamics in (N'H IND.2'Fe'F IND.5''H IND.2'O. Solid State Communications. 1997 ; 103( 6): 337-339.[citado 2024 jun. 26 ]

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