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Artigo de periodico
Aluminium-induced nanocrystalline Ge formation at low temperatures (2007)
Muniz, L. R.; Ribeiro, C. T. M.; Zanatta, Antonio Ricardo ; Chambouleyron, I.
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Subjects: ALUMÍNIO, TEMPERATURA, ESPECTROSCOPIA RAMAN, CRISTALIZAÇÃO, CRISTALOGRAFIA FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MUNIZ, L. R. et al. Aluminium-induced nanocrystalline Ge formation at low temperatures. Journal of Physics: Condensed Matter, v. 19, n. 7, p. 076206-1-076206-16, 2007Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/19/7/076206. Acesso em: 02 out. 2024.
APA
Muniz, L. R., Ribeiro, C. T. M., Zanatta, A. R., & Chambouleyron, I. (2007). Aluminium-induced nanocrystalline Ge formation at low temperatures. Journal of Physics: Condensed Matter, 19( 7), 076206-1-076206-16. doi:10.1088/0953-8984/19/7/076206
NLM
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. Aluminium-induced nanocrystalline Ge formation at low temperatures [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 7): 076206-1-076206-16.[citado 2024 out. 02 ] Available from: https://doi.org/10.1088/0953-8984/19/7/076206
Vancouver
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. Aluminium-induced nanocrystalline Ge formation at low temperatures [Internet]. Journal of Physics: Condensed Matter. 2007 ; 19( 7): 076206-1-076206-16.[citado 2024 out. 02 ] Available from: https://doi.org/10.1088/0953-8984/19/7/076206
Artigo de periodico
Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films (2006)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo ; Chambouleyron, I.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILÍCIO, NÍQUEL, TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, v. No 2006, n. 9, p. 094311-1-094311-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2362877. Acesso em: 02 out. 2024.
APA
Ferri, F. A., Zanatta, A. R., & Chambouleyron, I. (2006). Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, No 2006( 9), 094311-1-094311-7. doi:10.1063/1.2362877
NLM
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2024 out. 02 ] Available from: https://doi.org/10.1063/1.2362877
Vancouver
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2024 out. 02 ] Available from: https://doi.org/10.1063/1.2362877
Trabalho de evento-anais periodico
Annealing effects on crystallized Al-doped a-Ge: H thin films (2005)
Fajardo, F.; Zanatta, Antonio Ricardo ; Chambouleyron, I.
Source: Physica Status Solidi C. Conference titles: Latin American Symposium on Solid State Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN, FILMES FINOS, ALUMÍNIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FAJARDO, F. e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. Weinheim: Wiley-VCH Verlag GmbH. . Acesso em: 02 out. 2024. , 2005
APA
Fajardo, F., Zanatta, A. R., & Chambouleyron, I. (2005). Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. Weinheim: Wiley-VCH Verlag GmbH.
NLM
Fajardo F, Zanatta AR, Chambouleyron I. Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. 2005 ; 2( 10): 3750-3753.[citado 2024 out. 02 ]
Vancouver
Fajardo F, Zanatta AR, Chambouleyron I. Annealing effects on crystallized Al-doped a-Ge: H thin films. Physica Status Solidi C. 2005 ; 2( 10): 3750-3753.[citado 2024 out. 02 ]
Trabalho de evento-anais periodico
Annealing crystallization of a-Ge/Al/Si thin films (2005)
Fajardo, F.; Zanatta, Antonio Ricardo ; Chambouleyron, I.
Source: Physica Status Solidi B. Conference titles: Latin American Symposium on Solid State Physics. Unidade: IFSC
Subjects: FILMES FINOS, CRISTALIZAÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FAJARDO, F. e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. Weinheim: Wiley-VCH Verlag GmbH. . Acesso em: 02 out. 2024. , 2005
APA
Fajardo, F., Zanatta, A. R., & Chambouleyron, I. (2005). Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. Weinheim: Wiley-VCH Verlag GmbH.
NLM
Fajardo F, Zanatta AR, Chambouleyron I. Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. 2005 ; 242( 9): 1906-1909.[citado 2024 out. 02 ]
Vancouver
Fajardo F, Zanatta AR, Chambouleyron I. Annealing crystallization of a-Ge/Al/Si thin films. Physica Status Solidi B. 2005 ; 242( 9): 1906-1909.[citado 2024 out. 02 ]
Artigo de periodico
Low-temperature Al-induced crystallization of amorphous Ge (2005)
Zanatta, Antonio Ricardo ; Chambouleyron, I.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA, SEMICONDUTORES, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, v. 97, n. 11, p. 094914-1-094914-11, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1889227. Acesso em: 02 out. 2024.
APA
Zanatta, A. R., & Chambouleyron, I. (2005). Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, 97( 11), 094914-1-094914-11. doi:10.1063/1.1889227
NLM
Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2024 out. 02 ] Available from: https://doi.org/10.1063/1.1889227
Vancouver
Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2024 out. 02 ] Available from: https://doi.org/10.1063/1.1889227
Trabalho de evento-resumo
The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium (2005)
Muniz, L R; Ribeiro, C. T. M.; Zanatta, Antonio Ricardo ; Chambouleyron, I.
Source: Books of Abstracts. Conference titles: International Conference on Amorphous and Nanocrystalline Semiconductors. Unidade: IFSC
Subjects: SEMICONDUTORES, CRISTALIZAÇÃO, ALUMÍNIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MUNIZ, L R et al. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. 2005, Anais.. Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo, 2005. . Acesso em: 02 out. 2024.
APA
Muniz, L. R., Ribeiro, C. T. M., Zanatta, A. R., & Chambouleyron, I. (2005). The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. In Books of Abstracts. Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. Books of Abstracts. 2005 ;[citado 2024 out. 02 ]
Vancouver
Muniz LR, Ribeiro CTM, Zanatta AR, Chambouleyron I. The influence of hydrogenation and of the nature of the substrate on the low-temperature Al-induced crystallization of amorphous germanium. Books of Abstracts. 2005 ;[citado 2024 out. 02 ]

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