ReP USP - Resultado da busca

Trabalho de evento-resumo
Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires (2014)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Caface, Raphael; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES
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ABNT
PUSEP, Yuri A et al. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires. 2014, Anais.. London: International Union of Pure and Applied Physics - IUPAP, 2014. Disponível em: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf. Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Caface, R., Arakaki, H., & Souza, C. A. de. (2014). Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires. In Abstracts. London: International Union of Pure and Applied Physics - IUPAP. Recuperado de http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
NLM
Pusep YA, Guimarães FEG, Caface R, Arakaki H, Souza CA de. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires [Internet]. Abstracts. 2014 ;[citado 2024 nov. 03 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
Vancouver
Pusep YA, Guimarães FEG, Caface R, Arakaki H, Souza CA de. Photoluminescence of radial heterostructured GaAs/AIGaAs/GaAs nanowires [Internet]. Abstracts. 2014 ;[citado 2024 nov. 03 ] Available from: http://www.icps2014.org/abstracts/Posters_Optical_Properties_of_Heterostructures_B.pdf
Trabalho de evento-resumo
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure (2014)
Pusep, Yuri A ; Barbosa, B. G.; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts Booklet. Conference titles: International Conference on Physics of Light-Matter Coupling in Nanostructures - PLMCN. Unidade: IFSC
Subjects: SEMICONDUTORES, NANOTECNOLOGIA
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ABNT
PUSEP, Yuri A et al. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. 2014, Anais.. Montpellier: Université Montpellier 2, Département Semiconducteurs, Matériaux et Capteurs, Laboratoire Charles Coulomb, 2014. . Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Barbosa, B. G., Arakaki, H., & Souza, C. A. de. (2014). Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. In Abstracts Booklet. Montpellier: Université Montpellier 2, Département Semiconducteurs, Matériaux et Capteurs, Laboratoire Charles Coulomb.
NLM
Pusep YA, Barbosa BG, Arakaki H, Souza CA de. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Abstracts Booklet. 2014 ;[citado 2024 nov. 03 ]
Vancouver
Pusep YA, Barbosa BG, Arakaki H, Souza CA de. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Abstracts Booklet. 2014 ;[citado 2024 nov. 03 ]
Artigo de periodico
Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Guimarães, Francisco Eduardo Gontijo ; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Applied Physics Letters. Unidade: IFSC
Subjects: NANOTECNOLOGIA, SEMICONDUTORES
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, v. 103, n. 3, p. 033121-1-033121-3, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4816288. Acesso em: 03 nov. 2024.
APA
Guimarães, F. E. G., Caface, R. A., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, 103( 3), 033121-1-033121-3. doi:10.1063/1.4816288
NLM
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1063/1.4816288
Vancouver
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1063/1.4816288
Artigo de periodico
Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A ; Arakaki, Haroldo; Souza, Carlos Alberto de; Rodrigues, A. D.; Haapamaki, C. M.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
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ABNT
PUSEP, Yuri A et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
NLM
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1063/1.4803494
Vancouver
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1063/1.4803494
Trabalho de evento-resumo
Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: International Conference on Optics of Excitons in Confined Systems - OECS. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN
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ABNT
PUSEP, Yuri A et al. Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires. 2013, Anais.. Rome: University of Rome II Tor Vergata, 2013. Disponível em: http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf. Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Caface, R. A., Arakaki, H., & Souza, C. A. de. (2013). Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires. In Abstracts. Rome: University of Rome II Tor Vergata. Recuperado de http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf
NLM
Pusep YA, Guimarães FEG, Caface RA, Arakaki H, Souza CA de. Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires [Internet]. Abstracts. 2013 ;[citado 2024 nov. 03 ] Available from: http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf
Vancouver
Pusep YA, Guimarães FEG, Caface RA, Arakaki H, Souza CA de. Photoluminescence of radial heterostrutured GaAs/AlGaAs/GaAs nanowires [Internet]. Abstracts. 2013 ;[citado 2024 nov. 03 ] Available from: http://www.mifp.eu/OECS13/images/modules/OECS_2013_light.pdf
Trabalho de evento-resumo
From amorphous to crystalline silicon nanoclusters: surface state and structural effects on exciton properties (2010)
Borrero-González, Luis José; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcello Rubens Barsi; Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Wojcik, J.; Mascher, P.; Gennaro, Ana Maria; Tirado, Monica; Comedi, David
Source: Abstracts. Conference titles: MRS Fall Meeting. Unidade: IFSC
Subjects: NANOTECNOLOGIA, SILÍCIO, FILMES FINOS, FOTOLUMINESCÊNCIA
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ABNT
BORRERO-GONZÁLEZ, Luis José et al. From amorphous to crystalline silicon nanoclusters: surface state and structural effects on exciton properties. 2010, Anais.. Warrendale: Materials Research Society - MRS, 2010. . Acesso em: 03 nov. 2024.
APA
Borrero-González, L. J., Nunes, L. A. de O., Andreeta, M. R. B., Pusep, Y. A., Guimarães, F. E. G., Wojcik, J., et al. (2010). From amorphous to crystalline silicon nanoclusters: surface state and structural effects on exciton properties. In Abstracts. Warrendale: Materials Research Society - MRS.
NLM
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Pusep YA, Guimarães FEG, Wojcik J, Mascher P, Gennaro AM, Tirado M, Comedi D. From amorphous to crystalline silicon nanoclusters: surface state and structural effects on exciton properties. Abstracts. 2010 ;[citado 2024 nov. 03 ]
Vancouver
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Pusep YA, Guimarães FEG, Wojcik J, Mascher P, Gennaro AM, Tirado M, Comedi D. From amorphous to crystalline silicon nanoclusters: surface state and structural effects on exciton properties. Abstracts. 2010 ;[citado 2024 nov. 03 ]
Artigo de periodico
The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters (2010)
Borrero-González, L. J.; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcello Rubens Barsi; Wojcik, J.; Mascher, P.; Pusep, Yuri A ; Comedi, D.; Guimarães, Francisco Eduardo Gontijo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, TEMPERATURA (VARIAÇÃO)
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ABNT
BORRERO-GONZÁLEZ, L. J. et al. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, v. 108, n. 1, p. 013105-1-013105-5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3457900. Acesso em: 03 nov. 2024.
APA
Borrero-González, L. J., Nunes, L. A. de O., Andreeta, M. R. B., Wojcik, J., Mascher, P., Pusep, Y. A., et al. (2010). The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters. Journal of Applied Physics, 108( 1), 013105-1-013105-5. doi:10.1063/1.3457900
NLM
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1063/1.3457900
Vancouver
Borrero-González LJ, Nunes LA de O, Andreeta MRB, Wojcik J, Mascher P, Pusep YA, Comedi D, Guimarães FEG. The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters [Internet]. Journal of Applied Physics. 2010 ; 108( 1): 013105-1-013105-5.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1063/1.3457900
Trabalho de evento-resumo periodico
The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals (2010)
Borrero, L.; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcelo Rubens Barsi; Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Wojcik, J.; Mascher, P.; Comedi, D.
Source: Journal of Physics : Conference Series. Conference titles: International Conference on Optics of Excitons in Confined Systems - OECS. Unidade: IFSC
Subjects: SEMICONDUTORES, NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, ÓPTICA (PROPRIEDADES;MODELOS), CRISTALOGRAFIA FÍSICA (ESTUDO), ESPECTROSCOPIA RAMAN
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ABNT
BORRERO, L. et al. The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals. Journal of Physics : Conference Series. Bristol: Institute of Physics - IOP. Disponível em: https://doi.org/10.1088/1742-6596/210/1/011003. Acesso em: 03 nov. 2024. , 2010
APA
Borrero, L., Nunes, L. A. de O., Andreeta, M. R. B., Pusep, Y. A., Guimarães, F. E. G., Wojcik, J., et al. (2010). The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals. Journal of Physics : Conference Series. Bristol: Institute of Physics - IOP. doi:10.1088/1742-6596/210/1/011003
NLM
Borrero L, Nunes LA de O, Andreeta MRB, Pusep YA, Guimarães FEG, Wojcik J, Mascher P, Comedi D. The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals [Internet]. Journal of Physics : Conference Series. 2010 ; 210( 1):[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/1742-6596/210/1/011003
Vancouver
Borrero L, Nunes LA de O, Andreeta MRB, Pusep YA, Guimarães FEG, Wojcik J, Mascher P, Comedi D. The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals [Internet]. Journal of Physics : Conference Series. 2010 ; 210( 1):[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/1742-6596/210/1/011003
Artigo de periodico
PL spectroscopy of Fermi electrons in regime of the quantum Hall effect (2009)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Journal of Luminescence. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, EFEITO HALL, CAMPO MAGNÉTICO, SUPERFÍCIES
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ABNT
PUSEP, Yuri A et al. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. Journal of Luminescence, v. 129, n. 12, p. 1948-1950, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2009.04.084. Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., & Souza, C. A. de. (2009). PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. Journal of Luminescence, 129( 12), 1948-1950. doi:10.1016/j.jlumin.2009.04.084
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect [Internet]. Journal of Luminescence. 2009 ; 129( 12): 1948-1950.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1016/j.jlumin.2009.04.084
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect [Internet]. Journal of Luminescence. 2009 ; 129( 12): 1948-1950.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1016/j.jlumin.2009.04.084
Trabalho de evento-resumo
Efeito dos parâmetros de fabricação de nanocristais de silício no confinamento de éxcitons (2009)
Borrero-González, Luis José; Wojcik, Jacek; Mascher, Peter; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcello Rubens Barsi; Pusep, Yuri A ; Comedi, David; Guimarães, Francisco Eduardo Gontijo
Source: Caderno de Resumos. Conference titles: Workshop da Pós-Graduação em Física do IFSC. Unidade: IFSC
Subjects: NANOPARTÍCULAS, CRISTALOGRAFIA FÍSICA, SILÍCIO, FÍSICA ÓPTICA, ESPECTROSCOPIA DA LUZ
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ABNT
BORRERO-GONZÁLEZ, Luis José et al. Efeito dos parâmetros de fabricação de nanocristais de silício no confinamento de éxcitons. 2009, Anais.. São Carlos: Instituto de Física de São Carlos - USP, 2009. . Acesso em: 03 nov. 2024.
APA
Borrero-González, L. J., Wojcik, J., Mascher, P., Nunes, L. A. de O., Andreeta, M. R. B., Pusep, Y. A., et al. (2009). Efeito dos parâmetros de fabricação de nanocristais de silício no confinamento de éxcitons. In Caderno de Resumos. São Carlos: Instituto de Física de São Carlos - USP.
NLM
Borrero-González LJ, Wojcik J, Mascher P, Nunes LA de O, Andreeta MRB, Pusep YA, Comedi D, Guimarães FEG. Efeito dos parâmetros de fabricação de nanocristais de silício no confinamento de éxcitons. Caderno de Resumos. 2009 ;[citado 2024 nov. 03 ]
Vancouver
Borrero-González LJ, Wojcik J, Mascher P, Nunes LA de O, Andreeta MRB, Pusep YA, Comedi D, Guimarães FEG. Efeito dos parâmetros de fabricação de nanocristais de silício no confinamento de éxcitons. Caderno de Resumos. 2009 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Exciton dynamics in silicon nanocrystals (2009)
Borrero, L.; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcello Rubens Barsi; Pusep, Yuri A ; Wojcik, J.; Mascher, P.; Comedi, D.; Guimarães, Francisco Eduardo Gontijo
Source: Abstracts. Conference titles: International Conference on Advanced Materials - ICAM. Unidade: IFSC
Subjects: NANOTECNOLOGIA, SILÍCIO, FOTOLUMINESCÊNCIA
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ABNT
BORRERO, L. et al. Exciton dynamics in silicon nanocrystals. 2009, Anais.. Evanston: International Union of Materials Research Societies - IUMRS, 2009. . Acesso em: 03 nov. 2024.
APA
Borrero, L., Nunes, L. A. de O., Andreeta, M. R. B., Pusep, Y. A., Wojcik, J., Mascher, P., et al. (2009). Exciton dynamics in silicon nanocrystals. In Abstracts. Evanston: International Union of Materials Research Societies - IUMRS.
NLM
Borrero L, Nunes LA de O, Andreeta MRB, Pusep YA, Wojcik J, Mascher P, Comedi D, Guimarães FEG. Exciton dynamics in silicon nanocrystals. Abstracts. 2009 ;[citado 2024 nov. 03 ]
Vancouver
Borrero L, Nunes LA de O, Andreeta MRB, Pusep YA, Wojcik J, Mascher P, Comedi D, Guimarães FEG. Exciton dynamics in silicon nanocrystals. Abstracts. 2009 ;[citado 2024 nov. 03 ]
Artigo de periodico
Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures (2009)
Pusep, Yuri A ; Rodriguez, A.; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Journal of Physics: Condensed Matter. Unidade: IFSC
Subjects: SEMICONDUTIVIDADE, CAMPO MAGNÉTICO, SEMICONDUTORES, DIAGRAMA DE TRANSFORMAÇÃO DE FASE, EFEITO HALL
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ABNT
PUSEP, Yuri A et al. Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures. Journal of Physics: Condensed Matter, v. 21, n. 20, p. 205501-1-205501-7, 2009Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/21/20/205501. Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Rodriguez, A., Arakaki, H., & Souza, C. A. de. (2009). Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures. Journal of Physics: Condensed Matter, 21( 20), 205501-1-205501-7. doi:10.1088/0953-8984/21/20/205501
NLM
Pusep YA, Rodriguez A, Arakaki H, Souza CA de. Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures [Internet]. Journal of Physics: Condensed Matter. 2009 ; 21( 20): 205501-1-205501-7.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/0953-8984/21/20/205501
Vancouver
Pusep YA, Rodriguez A, Arakaki H, Souza CA de. Influence of interlayer tunneling on the quantized Hall phases in intentionally disordered multilayer structures [Internet]. Journal of Physics: Condensed Matter. 2009 ; 21( 20): 205501-1-205501-7.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/0953-8984/21/20/205501
Trabalho de evento-resumo
The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals (2009)
Borrero, L.; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcelo Rubens Barsi; Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo
Source: Abstracts. Conference titles: International Conference on Optics of Excitons in Confined Systems - OECS. Unidade: IFSC
Subjects: ÓPTICA (PROPRIEDADES), FOTOLUMINESCÊNCIA, NANOTECNOLOGIA, SILÍCIO, ESPECTROSCOPIA RAMAN, POLÍMEROS (MATERIAIS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORRERO, L. et al. The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals. 2009, Anais.. Madrid: Universidad Autónoma de Madrid, 2009. . Acesso em: 03 nov. 2024.
APA
Borrero, L., Nunes, L. A. de O., Andreeta, M. R. B., Pusep, Y. A., & Guimarães, F. E. G. (2009). The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals. In Abstracts. Madrid: Universidad Autónoma de Madrid.
NLM
Borrero L, Nunes LA de O, Andreeta MRB, Pusep YA, Guimarães FEG. The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals. Abstracts. 2009 ;[citado 2024 nov. 03 ]
Vancouver
Borrero L, Nunes LA de O, Andreeta MRB, Pusep YA, Guimarães FEG. The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals. Abstracts. 2009 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
PL spectroscopy of Fermi electrons in regime of the quantum Hall effect (2008)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: International Conference on Luminescence and Optical Spectroscopy of Condensed Matter ICL'08. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES, EFEITO HALL, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA
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ABNT
PUSEP, Yuri A et al. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. 2008, Anais.. Lyon: Université de Lyon, 2008. . Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., & Souza, C. A. de. (2008). PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. In Abstracts. Lyon: Université de Lyon.
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. Abstracts. 2008 ;[citado 2024 nov. 03 ]
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. PL spectroscopy of Fermi electrons in regime of the quantum Hall effect. Abstracts. 2008 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Quantum Hall effect in random GaAs/AlGaAs superlattices (2008)
Pusep, Yuri A ; Rodríguez, Alberto; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts. Conference titles: General Conference of the Condensed Matter Division of the European Physical Society - CMD. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES, FILMES FINOS, EFEITO HALL
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ABNT
PUSEP, Yuri A et al. Quantum Hall effect in random GaAs/AlGaAs superlattices. 2008, Anais.. Roma: Università di Roma, 2008. . Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Rodríguez, A., Arakaki, H., & Souza, C. A. de. (2008). Quantum Hall effect in random GaAs/AlGaAs superlattices. In Abstracts. Roma: Università di Roma.
NLM
Pusep YA, Rodríguez A, Arakaki H, Souza CA de. Quantum Hall effect in random GaAs/AlGaAs superlattices. Abstracts. 2008 ;[citado 2024 nov. 03 ]
Vancouver
Pusep YA, Rodríguez A, Arakaki H, Souza CA de. Quantum Hall effect in random GaAs/AlGaAs superlattices. Abstracts. 2008 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Spin-assisted interlayer percolation in quantum Hall multi-layer systems (2008)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, Carlos Alberto de
Source: Abstracts Book. Conference titles: International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors - PASPS. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN, FÍSICA, EFEITO HALL, MAGNETISMO, CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Spin-assisted interlayer percolation in quantum Hall multi-layer systems. 2008, Anais.. São Carlos: Instituto de Física de São Carlos - IFSC, 2008. Disponível em: http://www.pasps-v.com.br/arquivos/webbooklet2.pdf. Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., & Souza, C. A. de. (2008). Spin-assisted interlayer percolation in quantum Hall multi-layer systems. In Abstracts Book. São Carlos: Instituto de Física de São Carlos - IFSC. Recuperado de http://www.pasps-v.com.br/arquivos/webbooklet2.pdf
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spin-assisted interlayer percolation in quantum Hall multi-layer systems [Internet]. Abstracts Book. 2008 ;[citado 2024 nov. 03 ] Available from: http://www.pasps-v.com.br/arquivos/webbooklet2.pdf
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA de. Spin-assisted interlayer percolation in quantum Hall multi-layer systems [Internet]. Abstracts Book. 2008 ;[citado 2024 nov. 03 ] Available from: http://www.pasps-v.com.br/arquivos/webbooklet2.pdf
Artigo de periodico
Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect (2007)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Arakaki, Haroldo; Souza, C. A.; Chiquito, A. J.
Source: International Journal of Modern Physics B. Unidade: IFSC
Subjects: EFEITO HALL, FÍSICA MODERNA, SISTEMAS ELÉTRICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect. International Journal of Modern Physics B, v. 21, n. 8/9, p. 1409-1413, 2007Tradução . . Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., Souza, C. A., & Chiquito, A. J. (2007). Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect. International Journal of Modern Physics B, 21( 8/9), 1409-1413.
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA, Chiquito AJ. Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect. International Journal of Modern Physics B. 2007 ; 21( 8/9): 1409-1413.[citado 2024 nov. 03 ]
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA, Chiquito AJ. Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect. International Journal of Modern Physics B. 2007 ; 21( 8/9): 1409-1413.[citado 2024 nov. 03 ]
Trabalho de evento-anais periodico
Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices (2005)
Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Ribeiro, M. B.; Arakaki, Haroldo; Souza, Carlos Alberto de; Malzer, S.; Döhler, G. H.
Source: AIP Conference Proceedings. Conference titles: International Conference on the Physics of Semiconductors - ICPS. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.1994427. Acesso em: 03 nov. 2024. , 2005
APA
Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2005). Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.1994427
NLM
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1063/1.1994427
Vancouver
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 959-960.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1063/1.1994427
Artigo de periodico
Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices (2005)
Pusep, Yuri A ; Ribeiro, M. B.; Arakaki, Haroldo; Souza, Carlos Alberto de; Malzer, S.; Döhler, G. H.
Source: Physical Review B. Unidade: IFSC
Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B, v. 71, n. Ja 2005, p. 035323-1-035323-6, 2005Tradução . . Acesso em: 03 nov. 2024.
APA
Pusep, Y. A., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2005). Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B, 71( Ja 2005), 035323-1-035323-6.
NLM
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B. 2005 ; 71( Ja 2005): 035323-1-035323-6.[citado 2024 nov. 03 ]
Vancouver
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B. 2005 ; 71( Ja 2005): 035323-1-035323-6.[citado 2024 nov. 03 ]

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