Brazilian Workshop on Semiconductor Physics - BWSP, 22 (2026)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; PENELLO, GERMANO MAIOLI - IF ; SIPAHI, GUILHERME MATOS - IFSC
- Unidades: IF; IFSC
- Subjects: SEMICONDUTORES; FÍSICA TEÓRICA
- Language: Inglês
- Imprenta:
- Publisher: Universidade Federal do Rio de Janeiro - UFRJ - Rio de Janeiro - RJ
- Publisher place: Rio de Janeiro
- Date published: 2026
-
ABNT
Brazilian Workshop on Semiconductor Physics - BWSP, 22. . Rio de Janeiro: Universidade Federal do Rio de Janeiro - UFRJ - Rio de Janeiro - RJ. Disponível em: https://repositorio.usp.br/directbitstream/70ff30d1-2198-4883-9547-5971f7edd0e7/3297528.pdf. Acesso em: 15 abr. 2026. , 2026 -
APA
Brazilian Workshop on Semiconductor Physics - BWSP, 22. (2026). Brazilian Workshop on Semiconductor Physics - BWSP, 22. Rio de Janeiro: Universidade Federal do Rio de Janeiro - UFRJ - Rio de Janeiro - RJ. Recuperado de https://repositorio.usp.br/directbitstream/70ff30d1-2198-4883-9547-5971f7edd0e7/3297528.pdf -
NLM
Brazilian Workshop on Semiconductor Physics - BWSP, 22 [Internet]. 2026 ;[citado 2026 abr. 15 ] Available from: https://repositorio.usp.br/directbitstream/70ff30d1-2198-4883-9547-5971f7edd0e7/3297528.pdf -
Vancouver
Brazilian Workshop on Semiconductor Physics - BWSP, 22 [Internet]. 2026 ;[citado 2026 abr. 15 ] Available from: https://repositorio.usp.br/directbitstream/70ff30d1-2198-4883-9547-5971f7edd0e7/3297528.pdf - Tailoring surface phonon polariton on Si'O IND.2' by ion-beam irradiation
- Far-infrared quantum bragg mirror detector
- Calculation of two-dimensional scattering patterns for oriented systems
- Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3
- Investigation of the electron-phonon interaction in GaAs/`Al IND.x´`Ga IND.1-x´As coupled double quantum wells
- Photoluminescence in self assembled quantum dos of InAs grown with different deposition rates
- Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells
- Growth and characterization of 'IN' 'GA''AS' quantum dots by molecular beam epitaxy
- Effect of barrier composition fluctuation on luminescence properties of AlGaAs/GaAs single quantum wells
- Influência da composição da barreira sobre a fotoluminescência dependente da temperatura em poços quânticos de $Al_xGa_{1-x}As/GaAs$
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