Improved self-seeding and carrier remodulation performance for WDM-PON by means of double RSOA erasure (2020)
- Authors:
- USP affiliated authors: ROMERO, MURILO ARAUJO - EESC ; CELINO, DANIEL RICARDO - EESC
- Unidade: EESC
- DOI: 10.1016/j.optcom.2019.125018
- Subjects: COMUNICAÇÃO ÓPTICA; AMPLIFICADORES ÓPTICOS; SEMICONDUTORES; ENGENHARIA ELÉTRICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Optics Communications
- ISSN: 0030-4018
- Volume/Número/Paginação/Ano: v. 459, p. 1-10, Mar. 2020
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
CELINO, Daniel Ricardo e DUARTE, Ulysses Rondina e ROMERO, Murilo Araujo. Improved self-seeding and carrier remodulation performance for WDM-PON by means of double RSOA erasure. Optics Communications, v. 459, p. 1-10, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.optcom.2019.125018. Acesso em: 25 dez. 2025. -
APA
Celino, D. R., Duarte, U. R., & Romero, M. A. (2020). Improved self-seeding and carrier remodulation performance for WDM-PON by means of double RSOA erasure. Optics Communications, 459, 1-10. doi:10.1016/j.optcom.2019.125018 -
NLM
Celino DR, Duarte UR, Romero MA. Improved self-seeding and carrier remodulation performance for WDM-PON by means of double RSOA erasure [Internet]. Optics Communications. 2020 ; 459 1-10.[citado 2025 dez. 25 ] Available from: https://doi.org/10.1016/j.optcom.2019.125018 -
Vancouver
Celino DR, Duarte UR, Romero MA. Improved self-seeding and carrier remodulation performance for WDM-PON by means of double RSOA erasure [Internet]. Optics Communications. 2020 ; 459 1-10.[citado 2025 dez. 25 ] Available from: https://doi.org/10.1016/j.optcom.2019.125018 - Analytical physics-based compact current–voltage model for 2D-2D resonant tunneling diodes
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- Analog radio-over-fiber fronthaul by a WDM-PON employing double RSOA self-seeding and carrier-reuse techniques
- Compact modeling of transition metal dichalcogenide ballistic transistors
- Compact modeling of 2D nanotransistors: materials characteristics, device structures, and analytical techniques
- Analytical model for cylindrical junctionless nanowire FETs
- Current-voltage modeling of transistors based on two-dimensional molybdenum disulfide
Informações sobre o DOI: 10.1016/j.optcom.2019.125018 (Fonte: oaDOI API)
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