Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis (2019)
- Authors:
- USP affiliated authors: ADDED, NEMITALA - IF ; MEDINA, NILBERTO HEDER - IF
- Unidade: IF
- DOI: 10.1016/j.microrel.2019.113437
- Assunto: ÍONS PESADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Microelectronics Reliability Volumes 100–101, September 2019, 113437
- Volume/Número/Paginação/Ano: v. 100–101, September 2019, 113437, 2019
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
OLIVEIRA, A e ADDED, Nemitala e MEDINA, Nilberto Heder. Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis. Microelectronics Reliability Volumes 100–101, September 2019, 113437, v. 100–101, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2019.113437. Acesso em: 12 fev. 2026. -
APA
Oliveira, A., Added, N., & Medina, N. H. (2019). Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis. Microelectronics Reliability Volumes 100–101, September 2019, 113437, 100–101. doi:10.1016/j.microrel.2019.113437 -
NLM
Oliveira A, Added N, Medina NH. Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis [Internet]. Microelectronics Reliability Volumes 100–101, September 2019, 113437. 2019 ; 100–101[citado 2026 fev. 12 ] Available from: https://doi.org/10.1016/j.microrel.2019.113437 -
Vancouver
Oliveira A, Added N, Medina NH. Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis [Internet]. Microelectronics Reliability Volumes 100–101, September 2019, 113437. 2019 ; 100–101[citado 2026 fev. 12 ] Available from: https://doi.org/10.1016/j.microrel.2019.113437 - Understanding single event effects measurements
- A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detector
- Variability in the electrical parameters of power devices by total ionizing dose radiation effects
- Ionizing radiation effect mechanisms in electronic devices: how and what to measure
- Variability in the electrical parameters of power devices by total ionizing dose radiation effects
- Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits
- Performance of electronic devices submitted to X-rays and high energy proton beams.
- Gamma-ray and X-ray fluorescence spectrometry on radionuclides, macro and micronutrients from South American coffee powder.
- Study of radiation effects in embedded systems
- Radiation effects for high-energy protons and x-ray in integrated circuits
Informações sobre o DOI: 10.1016/j.microrel.2019.113437 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
1-s2.0-S0026271419304809-... |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
