Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis (2019)
- Authors:
- USP affiliated authors: ADDED, NEMITALA - IF ; MEDINA, NILBERTO HEDER - IF
- Unidade: IF
- DOI: 10.1016/j.microrel.2019.113437
- Assunto: ÍONS PESADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Microelectronics Reliability Volumes 100–101, September 2019, 113437
- Volume/Número/Paginação/Ano: v. 100–101, September 2019, 113437, 2019
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
OLIVEIRA, A e ADDED, Nemitala e MEDINA, Nilberto Heder. Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis. Microelectronics Reliability Volumes 100–101, September 2019, 113437, v. 100–101, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2019.113437. Acesso em: 28 dez. 2025. -
APA
Oliveira, A., Added, N., & Medina, N. H. (2019). Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis. Microelectronics Reliability Volumes 100–101, September 2019, 113437, 100–101. doi:10.1016/j.microrel.2019.113437 -
NLM
Oliveira A, Added N, Medina NH. Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis [Internet]. Microelectronics Reliability Volumes 100–101, September 2019, 113437. 2019 ; 100–101[citado 2025 dez. 28 ] Available from: https://doi.org/10.1016/j.microrel.2019.113437 -
Vancouver
Oliveira A, Added N, Medina NH. Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis [Internet]. Microelectronics Reliability Volumes 100–101, September 2019, 113437. 2019 ; 100–101[citado 2025 dez. 28 ] Available from: https://doi.org/10.1016/j.microrel.2019.113437 - Understanding single event effects measurements
- Combined ionizing radiation & electromagnetic interference test procedure to achieve reliable integrated circuits
- Ionizing radiation effect mechanisms in electronic devices: how and what to measure
- Variability in the electrical parameters of power devices by total ionizing dose radiation effects
- A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detector
- Variability in the electrical parameters of power devices by total ionizing dose radiation effects
- Development of a system for studies on radiation effects in electronic devices
- Radiation effects for high-energy protons and x-ray in integrated circuits
- Study of radiation effects in embedded systems
- Effects of total dose of ionizing radiation on integrated circuits
Informações sobre o DOI: 10.1016/j.microrel.2019.113437 (Fonte: oaDOI API)
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