Variability in the electrical parameters of power devices by total ionizing dose radiation effects (2018)
- Authors:
- USP affiliated authors: MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF
- Unidade: IF
- Subjects: ACELERADOR DE PARTÍCULAS; ÍONS PESADOS
- Language: Português
- Abstract: The operation of electronic devices and components is strongly a®ected by ionizing radiation, present in several environments and applications [1], from space to medical applications. Due to miniaturization, these e®ects are even more noticeable and considerable [2], and that is the importance of studying the methodology and quali¯cation of the components exposed in these environments. The charged particles trapped in the oxide and the interface frequently produces harmful responses in the components and the knowledge of the physical mechanisms that occur in these situations contribute to the development of new radiation tolerant devices. Since there are three primary types of radiation e®ects in semiconductors: Total Ionizing Dose (TID), Displacement Damage (DD) and Single Event E®ects (SEE), the focus of this study is the e®ects of TID in a MOSFET power transistor, the IRLZ34NPbF, and the variability in the electrical parameters measured in several samples, which gives us the reliability about the methodology used in experiments that involve quali¯cation of devices exposed to radiation. The transistor was irradiated by a beam of protons, generated by a particle accelerator in the LAMFI-USP Laboratory, producing three samples with total dose of 80 krad, 140 krad and 150 krad. The samples will be X-ray irradiated by using a x-ray di®ractometer, with an e®ective energy of 10 keV and the same amount of total dose will be held, for a comparison purpose. The parameters analyzed before and after irradiation are done by the extraction of the curve of drain current (ID) by gate voltage (VGS) and the curve ID by drain-source voltage (VDS). The changes on the threshold voltage (VTH), the minimum needed voltage to create a conductive channel between source and drain, transconductance (gm), which is a measure of how e®ective is the gate voltage in the control of drain current, all of these parameters are changed by charged particles [3]. The comprehension of
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Brazilian Meeting on Nuclear Physics
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ABNT
BARROS, Felipe et al. Variability in the electrical parameters of power devices by total ionizing dose radiation effects. 2018, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 2018. Disponível em: https://sec.sbfisica.org.br/eventos/rtfnb/xli/programa/trabalhos.asp?sesId=17. Acesso em: 09 maio 2025. -
APA
Barros, F., Medina, N. H., Added, N., Aguiar, V. Â. P. de, & Silveira, M. A. G. da. (2018). Variability in the electrical parameters of power devices by total ionizing dose radiation effects. In Resumos. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://sec.sbfisica.org.br/eventos/rtfnb/xli/programa/trabalhos.asp?sesId=17 -
NLM
Barros F, Medina NH, Added N, Aguiar VÂP de, Silveira MAG da. Variability in the electrical parameters of power devices by total ionizing dose radiation effects [Internet]. Resumos. 2018 ;[citado 2025 maio 09 ] Available from: https://sec.sbfisica.org.br/eventos/rtfnb/xli/programa/trabalhos.asp?sesId=17 -
Vancouver
Barros F, Medina NH, Added N, Aguiar VÂP de, Silveira MAG da. Variability in the electrical parameters of power devices by total ionizing dose radiation effects [Internet]. Resumos. 2018 ;[citado 2025 maio 09 ] Available from: https://sec.sbfisica.org.br/eventos/rtfnb/xli/programa/trabalhos.asp?sesId=17 - Ionizing radiation effect mechanisms in electronic devices: how and what to measure
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