Trabalho de evento-resumo

Passivation layer and charge collection depth in electronic devices (2018)

• Authors:
  • Aguiar, Vitor Ângelo Paulino de
  • Medina, Nilberto Heder
  • Added, Nemitala
  • Aguiar, Vitor Ângelo Paulino de
  • Macchione, Eduardo Luiz Augusto
  • Leite, A. R.
  • Silva, Tiago Fiorini da
  • Rodrigues, Cleber Lima
  • Escudeiro, R.
  • Allegro, Paula Rangel Pestana
  • Santos, H. C.
  • Alberton, S. G.
  • Scarduelli, Valdir Brunetti
  • Silveira, M. A. G.
  • Melo, M. A. A. de
  • Santos, R. B. B.
  • Giacomini, R.
  • Oliveira, J. A.
  • Leite, F. G. H.
  • Sayeg, Isaac Jamil
• USP affiliated authors: MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; MACCHIONE, EDUARDO LUIZ AUGUSTO - IF ; SILVA, TIAGO FIORINI DA - IF ; RODRIGUES, CLEBER LIMA - IF ; SAYEG, ISAAC JAMIL - IGC
• Unidades: IF; IGC
• Subjects: ACELERADOR DE PARTÍCULAS; ÍONS PESADOS
• Language: Português
• Abstract: Single Event E®ects (SEE) are described as system perturbations in electronic devices when impinged by a heavy ion capable of generating high charge density in the sensitive region of the device. Tests of Single Event E®etcs are done using accelerated ions hitting the device at known °ux and energy. However, electronic devices possess passivation layers and metallic interconnnections on its surfaces in order to provide electrical isolation/connection of the device that cause energy loss and straggling of incident ions, thus reducing the e®ective energy transfered to the material and, therefore, charge generation in the active layer. The knowledge of the composition and thickness of these layers are needed for correct calculation of deposited energy in the active region of the device and thus correct characterization of device's sensivity. In this work, results for ion-induced peak current and collected charge in a p-type MOSFET are shown for several ions and energies, using the SAFIIRA facility at Sao Paulo Pelletron Accelerator, allowing to ¯nd the depth of charge collection in the device. Scanning electron microscopy with energy dispersive X-ray and Rutherford Backscattering analysis are used for validation of results obtained. Preliminary results for 28nm digital devices, were only cross section data are avaiable, are also shown.
• Imprenta:
  • Publisher place: São Paulo
  • Date published: 2018
• Source:
  • Título: Resumos
• Conference titles: Brazilian Meeting on Nuclear Physics


---

Download do texto completo

Tipo	Nome	Link
	2948517.pdf	Direct link

How to cite

A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

• ABNT

  AGUIAR, Vitor Ângelo Paulino de et al. Passivation layer and charge collection depth in electronic devices. 2018, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 2018. Disponível em: https://sec.sbfisica.org.br/eventos/rtfnb/xli/programa/trabalhos.asp?sesId=17. Acesso em: 09 fev. 2026.

• APA

  Aguiar, V. Â. P. de, Medina, N. H., Added, N., Aguiar, V. Â. P. de, Macchione, E. L. A., Leite, A. R., et al. (2018). Passivation layer and charge collection depth in electronic devices. In Resumos. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://sec.sbfisica.org.br/eventos/rtfnb/xli/programa/trabalhos.asp?sesId=17

• NLM

  Aguiar VÂP de, Medina NH, Added N, Aguiar VÂP de, Macchione ELA, Leite AR, Silva TF da, Rodrigues CL, Escudeiro R, Allegro PRP, Santos HC, Alberton SG, Scarduelli VB, Silveira MAG, Melo MAA de, Santos RBB, Giacomini R, Oliveira JA, Leite FGH, Sayeg IJ. Passivation layer and charge collection depth in electronic devices [Internet]. Resumos. 2018 ;[citado 2026 fev. 09 ] Available from: https://sec.sbfisica.org.br/eventos/rtfnb/xli/programa/trabalhos.asp?sesId=17

• Vancouver

  Aguiar VÂP de, Medina NH, Added N, Aguiar VÂP de, Macchione ELA, Leite AR, Silva TF da, Rodrigues CL, Escudeiro R, Allegro PRP, Santos HC, Alberton SG, Scarduelli VB, Silveira MAG, Melo MAA de, Santos RBB, Giacomini R, Oliveira JA, Leite FGH, Sayeg IJ. Passivation layer and charge collection depth in electronic devices [Internet]. Resumos. 2018 ;[citado 2026 fev. 09 ] Available from: https://sec.sbfisica.org.br/eventos/rtfnb/xli/programa/trabalhos.asp?sesId=17

Últimas obras dos mesmos autores vinculados com a USP cadastradas na BDPI:

• Gamma-ray and X-ray fluorescence spectrometry on radionuclides, macro and micronutrients from South American coffee powder.
• Study of radiation effects in embedded systems
• Study of radiation effects in embedded systems
• Preliminary TID and SEU effects on an ARM COTS processor
• Ionizing Radiation Effects on a COTS LowCost RISC Microcontroller
• A proposal to study long-lived isotopes produced by thermal neutron irradiation in digital systems
• A proposal to study long-lived isotopes produced by thermal neutron irradiation in digital systems
• Single event effects studies on 3N163 MOSFET
• Lockstep dual-core ARM A9: implementation and resilience analysis under heavy ion-induced soft errors
• External-RBS, PIXE and NRA analysis for ancient swords