Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing (2007)
- Authors:
- USP affiliated authors: MORIMOTO, NILTON ITIRO - EP ; BORGES, BEN HUR VIANA - EESC
- Unidades: EP; EESC
- Subjects: MICROELETRÔNICA; CIÊNCIA DA COMPUTAÇÃO
- Language: Inglês
- Imprenta:
- Publisher place: São Paulo - Porto Alegre
- Date published: 2007
- Source:
- Título: Journal of Integrated Circuits and Systems
- ISSN: 1807-1953
- Volume/Número/Paginação/Ano: v.2, n. 2, September 2007
-
ABNT
OHTA, Ricardo Luís et al. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems, v. 2, n. 2, 2007Tradução . . Acesso em: 11 jan. 2026. -
APA
Ohta, R. L., Viana, C. E., Morimoto, N. I., & Borges, B. -H. V. (2007). Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems, 2( 2). -
NLM
Ohta RL, Viana CE, Morimoto NI, Borges B-HV. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2026 jan. 11 ] -
Vancouver
Ohta RL, Viana CE, Morimoto NI, Borges B-HV. Fabrication of Ti-Si-Ti metal-semiconductor-metal photodetectors using low temperature rapid thermal annealing. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2026 jan. 11 ] - Sensor óptico analisa partículas de compostos voláteis em suspensão no ar [Depoimento a Júlio Bernardes]
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