Characteristics of silicon nitride films deposited by inductively coulped plasma CVD (2000)
- Authors:
- USP affiliated authors: MANSANO, RONALDO DOMINGUES - EP ; FURLAN, ROGERIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/UA/UFRGS/UNICAMP/USP
- Publisher place: Manaus
- Date published: 2000
- Source:
- Título do periódico: SBMicro 2000: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
ZAMBOM, Luís da Silva e MANSANO, Ronaldo Domingues e FURLAN, Rogério. Characteristics of silicon nitride films deposited by inductively coulped plasma CVD. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 24 abr. 2024. -
APA
Zambom, L. da S., Mansano, R. D., & Furlan, R. (2000). Characteristics of silicon nitride films deposited by inductively coulped plasma CVD. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP. -
NLM
Zambom L da S, Mansano RD, Furlan R. Characteristics of silicon nitride films deposited by inductively coulped plasma CVD. SBMicro 2000: proceedings. 2000 ;[citado 2024 abr. 24 ] -
Vancouver
Zambom L da S, Mansano RD, Furlan R. Characteristics of silicon nitride films deposited by inductively coulped plasma CVD. SBMicro 2000: proceedings. 2000 ;[citado 2024 abr. 24 ] - Obtenção de filmes de nitreto de silício por deposição química assistida por plasma acoplado indutivamente
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