Silicon nitride coupled plasma deposited from mixtures of silane - nitrogen and silane - ammonia (1999)
- Authors:
- USP affiliated authors: FURLAN, ROGERIO - EP ; MANSANO, RONALDO DOMINGUES - EP
- Unidade: EP
- Subjects: CIRCUITOS ELÉTRICOS; ELETROQUÍMICA
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/IMAPS
- Publisher place: São Paulo
- Date published: 1999
- Source:
- Título do periódico: ICMP 99 : Technical Digest
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
ZAMBOM, Luís da Silva e FURLAN, Rogério e MANSANO, Ronaldo Domingues. Silicon nitride coupled plasma deposited from mixtures of silane - nitrogen and silane - ammonia. 1999, Anais.. São Paulo: SBMicro/IMAPS, 1999. . Acesso em: 23 abr. 2024. -
APA
Zambom, L. da S., Furlan, R., & Mansano, R. D. (1999). Silicon nitride coupled plasma deposited from mixtures of silane - nitrogen and silane - ammonia. In ICMP 99 : Technical Digest. São Paulo: SBMicro/IMAPS. -
NLM
Zambom L da S, Furlan R, Mansano RD. Silicon nitride coupled plasma deposited from mixtures of silane - nitrogen and silane - ammonia. ICMP 99 : Technical Digest. 1999 ;[citado 2024 abr. 23 ] -
Vancouver
Zambom L da S, Furlan R, Mansano RD. Silicon nitride coupled plasma deposited from mixtures of silane - nitrogen and silane - ammonia. ICMP 99 : Technical Digest. 1999 ;[citado 2024 abr. 23 ] - Obtenção de filmes de nitreto de silício por deposição química assistida por plasma acoplado indutivamente
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- Fabrication of silicon probes for biosensors
- Characteristics of silicon nitride films deposited by inductively coulped plasma CVD
- Microfluidic amplifiers fabricated in silicon using fluorine based plasma etching processes
- Application of fluorine based plasma etching processes in microfluidic device fabrication
- LPCVD deposition of silicon nitride assisted by high density plasmas
- A simple silicon based nitric oxide sensor
- Estudo da sinterização de contatos Al/Ti por recozimento térmico rápido visando a aplicação em circuitos integrados
- Boron (bf2) influence on cobalt disilicide formation
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