Photoreflectance investigations of semiconductor device structutres (1995)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Materials Science and Engeneering B
- Volume/Número/Paginação/Ano: v.35, p.267-72, 1995
- Conference titles: International Conference on Low Dimensional Structures and Devices
-
ABNT
SOARES, J A N T et al. Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 10 jan. 2026. , 1995 -
APA
Soares, J. A. N. T., Beliaev, D., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1995). Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. Cingapura: Instituto de Física, Universidade de São Paulo. -
NLM
Soares JANT, Beliaev D, Enderlein R, Scolfaro LMR, Leite JR. Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. 1995 ;35 267-72.[citado 2026 jan. 10 ] -
Vancouver
Soares JANT, Beliaev D, Enderlein R, Scolfaro LMR, Leite JR. Photoreflectance investigations of semiconductor device structutres. Materials Science and Engeneering B. 1995 ;35 267-72.[citado 2026 jan. 10 ] - Impurity levels of substitutional chalcogens-doped ge
- I-V and C-V characteristics of high-k dielectrics based MOS devices
- Analise sistematica das propriedades eletronicas de estruturas delta-dopadas em semicondutores
- Electronic properties of multiple 'DELTA-DOPED' layers in silicon and 'GA' 'AS'
- Ab initio calculation of the dynamical and thermodynamical properties of BP and InN
- First-principles calculations of the effective mass parameters of 'Al IND.X' 'Ga IND.1-X'N and 'Zn IND.X' 'Cd IND.1-X'Te alloys
- Near band-edge optical properties of cubic GaN
- Photoreflectance investigations of semiconductor device structures
- First-principles materials study for spintronics: MnAs and MnN
- Strain-induced shifts of the zone-center phonons of III-nitrides
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
