ReP USP - Resultado da busca

Trabalho de evento
Simple method to determine the poly gate doping concentration based on poly depletion effect (2005)
Rodrigues, Michele; Sonnenberg, Victor ; Martino, João Antonio
Source: Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, Michele e SONNENBERG, Victor e MARTINO, João Antonio. Simple method to determine the poly gate doping concentration based on poly depletion effect. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 16 nov. 2025.
APA
Rodrigues, M., Sonnenberg, V., & Martino, J. A. (2005). Simple method to determine the poly gate doping concentration based on poly depletion effect. In Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Rodrigues M, Sonnenberg V, Martino JA. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]
Vancouver
Rodrigues M, Sonnenberg V, Martino JA. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]
Trabalho de evento
Characterization of mode transitions for RF discharges in different gases (2005)
Rodrigues, Bruno da Silva; Verdonck, Patrick Bernard; Maciel, Homero Santiago; Mansano, Ronaldo Domingues
Source: Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, Bruno da Silva et al. Characterization of mode transitions for RF discharges in different gases. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 16 nov. 2025.
APA
Rodrigues, B. da S., Verdonck, P. B., Maciel, H. S., & Mansano, R. D. (2005). Characterization of mode transitions for RF discharges in different gases. In Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Rodrigues B da S, Verdonck PB, Maciel HS, Mansano RD. Characterization of mode transitions for RF discharges in different gases. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]
Vancouver
Rodrigues B da S, Verdonck PB, Maciel HS, Mansano RD. Characterization of mode transitions for RF discharges in different gases. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]
Trabalho de evento
Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication (2005)
Garcia, B.; Estrada, M.; Albertin, Katia Franklin ; Páez Carreño, Marcelo Nelson
Source: Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GARCIA, B. et al. Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 16 nov. 2025.
APA
Garcia, B., Estrada, M., Albertin, K. F., & Páez Carreño, M. N. (2005). Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. In Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Garcia B, Estrada M, Albertin KF, Páez Carreño MN. Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]
Vancouver
Garcia B, Estrada M, Albertin KF, Páez Carreño MN. Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]

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